APR 8910 Search Results

MKT-HQ-370-PH 63v

Abstract: MKT-HQ-370-PH MKT-HQ 370-PH 63v MKT-HQ-370-PH 100v mkt-hq 370 - ph mkt-hq 370 ph PHILIPS MKT 373 100v MKT-HQ-370-PH mkt hq 371 ph mkt-hq
Contextual Info: BC Components Product specification Metallized polyester film capacitors MKT RADIAL POTTED CAPACITORS MKT 370/371/372/373 PITCH 5/7.5/10/15/22.5/27.5 mm handbook, full pagewidth 2222 370 2222 371 2222 372 2222 373 CBA111 Fig.1 Simplified outlines. FEATURES

KP464

Abstract: Philips KP464 philips KP AXIAL EPOXY LACQUERED TYPES KP462 philips 84701 2222 460 82703 593-BC 2222 2222 107 595 bc
Contextual Info: BC Components Product specification Polypropylene film foil capacitors KP 460 to 464 KP AXIAL EPOXY LACQUERED TYPE handbook, full pagewidth CBA369 Fig.1 Simplified outlines. FEATURES • Supplied loose in box, taped on reel or unidirectional. APPLICATIONS

SSD1306

Abstract: SSD1306Z
Contextual Info: SOLOMON SYSTECH SEMICONDUCTOR TECHNICAL DATA SSD1306 Advance Information 128 x 64 Dot Matrix OLED/PLED Segment/Common Driver with Controller This document contains information on a new product. Specifications and information herein are subject to change without

SSD1306

Abstract: Resolution SSD-1306 OLED display SSD1306 SSD1306TR1 SSD1306Z
Contextual Info: SOLOMON SYSTECH SEMICONDUCTOR TECHNICAL DATA SSD1306 Advance Information 128 x 64 Dot Matrix OLED/PLED Segment/Common Driver with Controller This document contains information on a new product. Specifications and information herein are subject to change without

46LR16320B

Abstract: Mobile DDR SDRAM IS46LR16320B
Contextual Info: IS43LR16320B, IS46LR16320B 8M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16320B is a 536,870,912 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 8,388,608 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted

Contextual Info: I S43LR32160B, I S46LR32160B 4M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/ 46LR32160B is 536,870,912 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 4,194,304 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted

54als245aj

Abstract: qml-38535 54ALS245A CQCC1-N20 GDFP2-F20 GDFP3-F20 5962-R242-92 1015 TO 92
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Change tPLH, tPHL, tPZH, tPZL, and tPLZ. Remove vendor, FSCM 04713. 85-09-28 W. Heckman B Convert to military drawing format. Split VIL into temperatures. Add figures 2 and 4. Change propagation delays. Add footnotes to table I.

Contextual Info: I S43/ 46LR32400F 1M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/ 46LR32400F is 134,217,728 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted

Contextual Info: IS43/46LR16320C Advanced Information 8M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16320C is 536,870,912 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 8,388,608 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted

90ns03

Abstract: LBAA marking code A0L-A10L A1L smd 662K qml-38535 5962-8861010ZA 5962-8861012UA IDT7133S90G
Contextual Info: REVISIONS LTR DATE YR-MO-DA DESCRIPTION APPROVED A Changes to table I. Editorial changes throughout. 89-10-16 M.A. Frye B Add device types 05 and 06. Add case outline "U" to drawing. Removed vendor CAGE 61772 as source of supply for case outline Y. Changes to table I. Editorial changes throughout.

46LR16800F

Abstract: Mobile DDR SDRAM
Contextual Info: IS43/46LR16800F 2M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16800F is 134,217,728 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 2,097,152 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted

qml-38535

Abstract: 5962-8607501EA
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Added vendor CAGE code 01295. Table II, deleted subgroups 10 and 11 from group C periodic inspections and added 10 and 11 to group A test requirements. Changed 1.3 input voltage range from -1.5 V to -1.2 V. Editorial

Contextual Info: I S43/ 46LR16800F 2M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/ 46LR16800F is 134,217,728 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 2,097,152 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted

Contextual Info: I S43LR16320B, I S46LR16320B 8M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/ 46LR16320B is a 536,870,912 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 8,388,608 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted

CDFP2-F14

Abstract: 5962-8967701CA 5962-89677 LT1014 LT1014A 5962-89677022A QML38535 5962-8967702DA qml-38535 5962-8967702XA
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED Changes in accordance with N.O.R. 5962-R228-92. 92-08-11 M.A. FRYE Changes in accordance with N.O.R. 5962-R047-95. 94-12-14 M.A. FRYE Changes in accordance with N.O.R. 5962-R190-95. 95-08-16 M.A. FRYE Changes in accordance with N.O.R. 5962-R146-97.

5962F8761501VXA

Abstract: qml-38535 54AC11008FK ac08d 5962F8761501V9A
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Change ac limits in table I. Add vendor CAGE 18714 to device type 01CX. Editorial changes throughout. Add device type 02, add case outline E and CAGE code 01295. Made editorial changes throughout document.

5962-8766106XA

Abstract: 5962-8766102XA qml-38535 V05 SMD CODE MARKING 5962-8766101xa SMJ27C128-20JM
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED Added Arrhenius equation for unbiased bake under margin test method A, back end margin test step C. Corrected military part numbers for device types 01 and 02. Technical changes made to 1.2.2, table I, figure 1, figure 2, figure 4, figure 5, 4.3.1, and table II. Added vendor

Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Add device type 04 for device class V and radiation hardened requirements. Delete CAGE 64155. –ro 00-03-16 R. MONNIN B Drawing updated to reflect current requirements. -rrp 05-01-20 R. MONNIN REV SHEET

34333

Abstract: 5962-8670402FA 5962-8670402HA qml-38535 U3158 CDFP2-F10 5962-86704 5962-8670404HA 5962-8670406PA UC1843AJ
Contextual Info: REVISIONS LTR DESCRIPTION A DATE YR-MO-DA APPROVED Add vendor CAGE 34333. Add vendor CAGE U4637. Editorial changes throughout. 87-04-16 M. A. Frye B Add device types 02, 03, and 04. Editorial changes throughout. 87-12-21 M. A. Frye C Change vendor CAGE 12969 to 48726. Change max duty cycle min limit. Add

Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Add device type 04 for device class V and radiation hardened requirements. Delete CAGE 64155. –ro 00-03-16 R. MONNIN B Drawing updated to reflect current requirements. -rrp 05-01-20 R. MONNIN C Update drawing as part of the 5 year review. - jt

5962-8976301EA

Abstract: DG403AZ 5962-8976301M2A 5962-8976301MEA DG403AZ/883 QML-38535 DG403AK/883 DG403AK/883B DG403AZ/883B SMD MARKING CODE s4
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Editorial changes throughout. Change to one part-one part number format. Add appendix. 92-11-04 M. A. Frye B Change drawing to current requirements. Editorial changes throughout. - drw 04-09-24 Raymond Monnin

qml38535

Abstract: 5962-8982402PA 5962-89824
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Changes in accordance with N.O.R. 5962-R140-95 95-06-13 M. A. FRYE B Drawing updated to reflect current requirements. -ro 01-03-30 R. MONNIN C Update drawing as part of 5 year review. -rrp 07-06-12 ROBERT M. HEBER

5962-8954201g

Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Add device type 03. Add case outline H. Add radiation hardness requirements. Update boilerplate to reflect new requirements. - rrp 00-07-12 R. MONNIN B Make change to TCVOS, IOS, IIB, CMRR, VO, PSRR, SR, GBW, PD tests as

Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Add device type 03. Add case outline H. Add radiation hardness requirements.Update boilerplate to reflect new requirements. - rrp 00-07-12 R. MONNIN B Make change to TCVOS, IOS, IIB, CMRR, VO, PSRR, SR, GBW, PD tests as