APPLICATION NOTE SO8 EXPOSED Search Results

nsmd smd

Abstract: AND8195 SO8FL Solder paste stencil life AND8195/D 020C 1505C
Contextual Info: AND8195/D Board Mounting Notes for SO8−Flat Lead Prepared by: Steve St. Germain, Phil Celaya, and Isauro Amaro ON Semiconductor http://onsemi.com APPLICATION NOTE INTRODUCTION Wire Bond Various ON Semiconductor devices are packaged in an advanced power leadless package named Quad Flat

SO8FL

Abstract: FOOTPRINT PCB nsmd smd stencil tension WS3060 so8 pcb pattern 1505C 020C
Contextual Info: AND8195/D Board Mounting Notes for SO8−Flat Lead Prepared by: Steve St. Germain, Phil Celaya, and Isauro Amaro ON Semiconductor http://onsemi.com APPLICATION NOTE INTRODUCTION Wire Bond Various ON Semiconductor devices are packaged in an advanced power leadless package named Quad Flat

3w high power white led driver circuit diagram

Abstract: LM3404 LM3404HV psop-8 CMSH2-60 LM3404HVMA LM3404HVMR SLF10145T-470M1R4
Contextual Info: National Semiconductor Application Note 1629 Chris Richardson May 2007 Introduction ible PSOP-8 package with an exposed thermal pad also called a die-attach paddle, or DAP will be compared to help the user estimate the die temperature under various conditions, and determine which package is best for their application.

SO8 package fairchild

Abstract: so8 pcb pattern microfet
Contextual Info: February 2002 Application Note 7527 Dual Channel MicroFET 3x2 Power MOSFET Recommended Land Pattern and Thermal Performance Roman Gurevich , Scott Pearson , Ray Poremba Introduction Fairchild ’s new dual MicroFET™ 3x2 package with two exposed drain pads provides a true surface-mount alternative that greatly improves thermal characteristics, high current handling capability and low on-resistance. These

SO8 package fairchild

Contextual Info: October 2001 Application Note 7526 Single Channel MicroFET 3x2 Power MOSFET Recommended Land Pattern and Thermal Performance Roman Gurevich , Scott Pearson , Ray Poremba Introduction Fairchild ’s new MicroFET™ 3x2 package with exposed drain pad provides a true surface-mount alternative that

SO8 package fairchild

Abstract: 021L2
Contextual Info: February 2002 Application Note 7526 Single Channel MicroFET 3x2 Power MOSFET Recommended Land Pattern and Thermal Performance Roman Gurevich , Scott Pearson , Ray Poremba Introduction Fairchild ’s new MicroFET™ 3x2 package with exposed drain pad provides a true surface-mount alternative that

Contextual Info: TS982 Wide bandwidth, dual bipolar operational amplifier Datasheet - production data Description The TS982 device is a dual operational amplifier able to drive 200 mA down to voltages as low as 2.7 V. The SO-8 exposed-pad package allows high current output at high ambient temperatures

Application Note AN821

Abstract: 71622
Contextual Info: VISHAY SILICONIX www.vishay.com Power MOSFETs Application Note AN821 PowerPAK SO-8 Mounting and Thermal Considerations by Wharton McDaniel MOSFETs for switching applications are now available with die on resistances around 1 m and with the capability to

Contextual Info: Si7431DP Vishay Siliconix P-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 200 RDS(on) () ID (A) 0.174 at VGS = - 10 V - 3.8 0.180 at VGS = - 6 V - 3.6 Qg (Typ.) 88 PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 S • Active Clamp in Intermediate

Contextual Info: Si7148DP Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 75 0.011 at VGS = 10 V 28 0.0145 at VGS = 4.5 V 28 Qg (Typ.) 33 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

Contextual Info: New Product SiR836DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.019 at VGS = 10 V 21 0.0225 at VGS = 4.5 V 19.6 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: New Product SiR166DP Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) FEATURES ID (A)a RDS(on) (Ω) 30 Qg (Typ.) g 0.0032 at VGS = 10 V 40 0.0040 at VGS = 4.5 V 40g 25 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: New Product Si7938DP Vishay Siliconix Dual N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0058 at VGS = 10 V 60 0.007 at VGS = 4.5 V 60 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: New Product SiR466DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0035 at VGS = 10 V 40g 0.0051 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 21.5 nC S • DC/DC Converter - Low Side Switch • Notebook PC • Graphic Cards

Contextual Info: New Product Si7288DP Vishay Siliconix Dual N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A) 0.019 at VGS = 10 V 20 0.022 at VGS = 4.5 V 19 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET

Contextual Info: New Product Si7145DP Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.0026 at VGS = - 10 V - 60d 0.00375 at VGS = - 4.5 V - 60d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: New Product SiR470DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0023 at VGS = 10 V 60 0.00265 at VGS = 4.5 V 60 VDS (V) 40 Qg (Typ.) 45.5 nC • • • • Halogen-free TrenchFET Gen III Power MOSFET 100 % Rg Tested

Contextual Info: New Product SiR802DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 20 0.005 at VGS = 10 V 30 0.0057 at VGS = 4.5 V 30 0.0076 at VGS = 2.5 V 30 Qg (Typ.) 15.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21

Contextual Info: New Product SiR892DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0032 at VGS = 10 V 50a, g 0.0042 at VGS = 4.5 V 50a, g VDS (V) 25 Qg (Typ.) 20 nC PowerPAK SO-8 • Low-Side MOSFET in Synchronous Buck dc-to-dc

Contextual Info: New Product SiR438DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0018 at VGS = 10 V 60 0.0023 at VGS = 4.5 V 60 VDS (V) 25 Qg (Typ.) 32.6 nC PowerPAK SO-8 • • • • Halogen-free According to IEC 61249-2-21

Contextual Info: New Product Si7143DP Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0100 at VGS = - 10 V - 35 0.0186 at VGS = - 4.5V - 35 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: Si7956DP Vishay Siliconix Dual N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 RDS(on) (Ω) ID (A) 0.105 at VGS = 10 V 4.1 0.115 at VGS = 6 V 3.9 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • Low On-Resistance in New Low Thermal

Contextual Info: Si7942DP Vishay Siliconix Dual N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.049 at VGS = 10 V 5.9 0.060 at VGS = 6 V 5.5 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • New Low Thermal Resistance

Contextual Info: Si7478DP Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 0.0075 at VGS = 10 V 20 0.0088 at VGS = 4.5 V 18.5 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK®