apm4307
Abstract: APM4307K apm4307 equivalent STD-020C
Contextual Info: APM4307K P-Channel Enhancement Mode MOSFET Pin Description Features • -30V/-8A, RDS ON = 16mΩ (typ.) @ VGS=-10V RDS(ON)= 24mΩ (typ.) @ VGS=-4.5V • • • • Super High Dense Cell Design Reliable and Rugged Top View of SOP − 8 SOP-8 Package ( 1, 2, 3 )
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apm4307k-30v/-8aapm4307apm4307 equivalent+1std-020c
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mosfet marking code KP
Abstract: marking code KP APM4350KP STD-020C d 1275 f 0452 N-Channel MOSFET
Contextual Info: APM4350KP N-Channel Enhancement Mode MOSFET Pin Description Features • D 30V/60A, D D RDS ON =7.5mΩ (typ.) @ VGS = 10V D S RDS(ON) =11.5mΩ (typ.) @ VGS = 4.5V • • • • S S Super High Dense Cell Design G Avalanche Rated Reliable and Rugged Lead Free Available (RoHS Compliant)
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apm4350kp0v/60aapm4350mosfet marking code kp+4marking code kpstd-020cd 1275f 0452 n-channel mosfet
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APM4315
Abstract: APM4315K APM43
Contextual Info: APM4315K P-Channel Enhancement Mode MOSFET Pin Description Features • D -30V/-11A, D RDS ON = 11mΩ (typ.) @ VGS=-10V RDS(ON)= 20mΩ (typ.) @ VGS=-4.5V • • • S S Super High Dense Cell Design D D S G Reliable and Rugged Top View of SOP−8 Lead Free and Green Devices Available
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apm4315k-30v/-11aapm4315jesd-22+1apm43
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27BSC
Abstract: APM4320 APM4320K STD-020C
Contextual Info: APM4320K N-Channel Enhancement Mode MOSFET Pin Description Features • 30V/13A, RDS ON = 7.5mΩ(typ.) @ VGS = 10V RDS(ON) =10.5mΩ(typ.) @ VGS = 4.5V • • • • Super High Dense Cell Design Reliable and Rugged Top View of SOP − 8 SOP-8 Package
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apm4320k0v/13aapm432027bsc+1std-020c
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APM4303
Abstract: APM4303K STD-020C
Contextual Info: APM4303K P-Channel Enhancement Mode MOSFET Pin Description Features • -30V/-13A, RDS ON = 7mΩ (typ.) @ VGS=-20V RDS(ON)= 8mΩ (typ.) @ VGS=-10V RDS(ON)= 12mΩ (typ.) @ VGS=-4.5V • • • • Super High Dense Cell Design Top View of SOP − 8 Reliable and Rugged
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apm4303k-30v/-13aapm4303std-020c |
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APM4330
Abstract: APM4330K 27BSC STD-020C
Contextual Info: APM4330KC N-Channel Enhancement Mode MOSFET Pin Description Features • 30V/15A, RDS ON = 5.5mΩ(typ.) @ VGS = 10V RDS(ON) =7mΩ(typ.) @ VGS = 4.5V • • • • Super High Dense Cell Design Reliable and Rugged Top View of SOP − 8 SOP-8 Package Lead Free Available (RoHS Compliant)
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apm4330kc0v/15aapm4330apm4330k+227bscstd-020c
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APM4315
Abstract: APM4315K
Contextual Info: APM4315K P-Channel Enhancement Mode MOSFET Pin Description Features • D -30V/-11A, D RDS ON = 11mΩ (typ.) @ VGS=-10V RDS(ON)= 20mΩ (typ.) @ VGS=-4.5V • • • S S Super High Dense Cell Design D D S G Reliable and Rugged Top View of SOP−8 Lead Free and Green Devices Available
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apm4315k-30v/-11ajesd-22apm4315 |
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APM4356KP
Abstract: APM4356 STD-020C APM43 H PAO 40A
Contextual Info: APM4356KP N-Channel Enhancement Mode MOSFET Pin Description Features D • D 30V/80A, D D RDS ON = 3.3mΩ (typ.) @ VGS = 10V S S RDS(ON) = 4.5mΩ (typ.) @ VGS = 4.5V • • • • S G Super High Dense Cell Design Avalanche Rated Top View of KPAK Reliable and Rugged
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apm4356kp0v/80aapm4356mil-std-883d-2003+8mil-std-883d-1005jesd-22-bmil-std-883d-1011mil-std-883d-3015100mastd-020capm43h pao 40a
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A102
Abstract: APM4358KP STD-020C APM43 APM4358
Contextual Info: APM4358KP N-Channel Enhancement Mode MOSFET Pin Description Features D • D 30V/80A, D D RDS ON = 2.3mΩ (typ.) @ VGS = 10V S S RDS(ON) = 4.3mΩ (typ.) @ VGS = 4.5V • • • • S G Super High Dense Cell Design Avalanche Rated Top View of KPAK Reliable and Rugged
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apm4358kp0v/80aapm4358a102+2std-020capm43
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APM43
Contextual Info: APM4360KP N-Channel Enhancement Mode MOSFET Pin Description Features D • D 30V/50A, D D RDS ON = 9.5mΩ (typ.) @ VGS = 10V S S RDS(ON) = 14mΩ (typ.) @ VGS = 4.5V • • • • S G Super High Dense Cell Design Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available
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apm4360kp0v/50aapm4360apm40-2000+1apm43
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Contextual Info: APM4350KP N-Channel Enhancement Mode MOSFET Pin Description Features • D 30V/60A, D D RDS ON =7.5mΩ (typ.) @ VGS = 10V D S RDS(ON) =11.5mΩ (typ.) @ VGS = 4.5V • • • • S S Super High Dense Cell Design G Avalanche Rated Reliable and Rugged Lead Free Available (RoHS Compliant)
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apm4350kp0v/60aapm4350 |
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APM4317
Abstract: APM4317K
Contextual Info: APM4317K P-Channel Enhancement Mode MOSFET Features • Pin Description D -30V/-9A, D RDS ON = 16mΩ(typ.) @ VGS = -10V • • • RDS(ON) = 24mΩ(typ.) @ VGS = -4.5V S S Super High Dense Cell Design D S G Reliable and Rugged Lead Free and Green Devices Available
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apm4317k-30v/-9ajesd-22apm4317 |
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APM4303
Abstract: APM4303K IDS-13A
Contextual Info: APM4303K P-Channel Enhancement Mode MOSFET Pin Description Features • D -30V/-13A, D RDS ON = 7mΩ (typ.) @ VGS=-20V RDS(ON)= 8mΩ (typ.) @ VGS=-10V S S RDS(ON)= 12mΩ (typ.) @ VGS=-4.5V • • • • Super High Dense Cell Design D D S G Top View of SOP − 8
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APM4305
Abstract: APM4305K STD-020C
Contextual Info: APM4305K P-Channel Enhancement Mode MOSFET Pin Description Features • -30V/-11A, RDS ON = 11mΩ (typ.) @ VGS=-10V RDS(ON)= 20mΩ (typ.) @ VGS=-5V • • • • Super High Dense Cell Design Reliable and Rugged Top View of SOP − 8 SOP-8 Package ( 1, 2, 3 )
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apm4305k-30v/-11aapm4305mil-std-883d-2003+4883d-1005jesd-22-b883d-1011std-020c
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sop-8 weight
Abstract: APM43 APM4323
Contextual Info: APM4323K P-Channel Enhancement Mode MOSFET Pin Description Features • D -30V/-7A, RDS ON = 24mΩ(typ.) @ VGS = -10V RDS(ON) = 41mΩ(typ.) @ VGS = -4.5V • • • • • S S Super High Dense Cell Design D D D S G Reliable and Rugged Top View of SOP−8
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apm4323k-30v/-7aapm4323jesd-22+2sop-8 weightapm43
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APM4317
Abstract: APM4317K APM43 DS87 JESD for TCT
Contextual Info: APM4317K P-Channel Enhancement Mode MOSFET Features • Pin Description D -30V/-9A, D RDS ON = 16mΩ(typ.) @ VGS = -10V • • • RDS(ON) = 24mΩ(typ.) @ VGS = -4.5V S S Super High Dense Cell Design D S G Reliable and Rugged Lead Free and Green Devices Available
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apm4317k-30v/-9aapm4317jesd-22+3apm43ds87jesd for tct
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APM4305
Abstract: APM4305K 2070 SOP-8
Contextual Info: APM4305K P-Channel Enhancement Mode MOSFET Pin Description Features • D -30V/-11A, D RDS ON = 11mΩ (typ.) @ VGS=-10V RDS(ON)= 20mΩ (typ.) @ VGS=-5V • • • • S S Super High Dense Cell Design D D S G Reliable and Rugged Top View of SOP−8 SOP-8 Package
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DS20A
Abstract: APM4354 APM4354KP f 0452 N-Channel MOSFET STD-020C ds20a6
Contextual Info: APM4354KP N-Channel Enhancement Mode MOSFET Pin Description Features D • D 30V/70A, D D RDS ON =4.5mΩ (typ.) @ VGS = 10V S S RDS(ON) =6mΩ (typ.) @ VGS = 4.5V • • • • S G Super High Dense Cell Design Avalanche Rated Top View of KPAK Reliable and Rugged
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apm4354kp0v/70aapm4354ds20a+3f 0452 n-channel mosfetstd-020cds20a6
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APM4340
Abstract: APM4340K 27BSC STD-020C
Contextual Info: APM4340K N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/17A, RDS ON =3.8mΩ (typ.) @ VGS=10V RDS(ON)=5mΩ (typ.) @ VGS=4.5V • • • • Super High Dense Cell Design Avalanche Rated Top View of SOP − 8 Reliable and Rugged ( 5,6,7,8 )
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apm4340k0v/17aapm4340mil-std-883d-2003+5883d-1005jesd-22-b883d-101127bscstd-020c
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APM4301
Abstract: APM4301K STD-020C
Contextual Info: APM4301K P-Channel Enhancement Mode MOSFET Pin Description Features • -30V/-15A, RDS ON = 5.5mΩ (typ.) @ VGS=-20V RDS(ON)= 6mΩ (typ.) @ VGS=-10V RDS(ON)= 10mΩ (typ.) @ VGS=-4.5V • • • • Top View of SOP − 8 Super High Dense Cell Design Reliable and Rugged
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apm4301k-30v/-15aapm4301mil-std-883d-2003+4883d-1005jesd-22-b883d-1011std-020c
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A102
Abstract: APM4350KP code diode transient
Contextual Info: APM4350KP N-Channel Enhancement Mode MOSFET Pin Description Features • 30V/60A, RDS ON =7.5mΩ (typ.) @ VGS = 10V RDS(ON) =11.5mΩ (typ.) @ VGS = 4.5V • • • • D D D D Super High Dense Cell Design G S Avalanche Rated S S Reliable and Rugged Lead Free and Green Devices Available
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apm4350kp0v/60aapm4350a102+1code diode transient
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APM4354
Abstract: APM4354KP marking code KP A102
Contextual Info: APM4354KP N-Channel Enhancement Mode MOSFET Pin Description Features • 30V/70A, D RDS ON =4.5mΩ (typ.) @ VGS = 10V D D D G RDS(ON) =6mΩ (typ.) @ VGS = 4.5V • • • • S S Super High Dense Cell Design S Avalanche Rated Top View of KPAK Reliable and Rugged
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apm4354kp0v/70aapm4354marking code kp+1a102
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APM4320
Abstract: APM4320K A102 APM43
Contextual Info: APM4320K N-Channel Enhancement Mode MOSFET Pin Description Features • D 30V/13A, D RDS ON = 7.5mΩ(typ.) @ VGS = 10V RDS(ON) =10.5mΩ(typ.) @ VGS = 4.5V • • • • S S Super High Dense Cell Design D D S G Reliable and Rugged SOP-8 Package Top View of SOP−8
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apm4320k0v/13adevice60apm4320+2a102apm43
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APM4301
Abstract: APM4301K
Contextual Info: APM4301K P-Channel Enhancement Mode MOSFET Pin Description Features D • -30V/-15A, D D D RDS ON = 5.5mΩ (typ.) @ VGS=-20V RDS(ON)= 6mΩ (typ.) @ VGS=-10V S S RDS(ON)= 10mΩ (typ.) @ VGS=-4.5V • • • • S G Super High Dense Cell Design Top View of SOP−8
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apm4301k-30v/-15amaterial60apm4301 |
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