APM20 Search Results

APM2023N

Abstract: A102
Contextual Info: APM2023N N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/12.8A , RDS ON =20mΩ(typ.) @ VGS=4.5V RDS(ON)=29mΩ(typ.) @ VGS=2.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • • 2 3 G D S Reliable and Rugged TO-252 Package

APM2095P equivalent

Abstract: APM2095P APM2095PU STD-020C
Contextual Info: APM2095PU P-Channel Enhancement Mode MOSFET Features • Pin Description -20V/-8A, RDS ON =70mΩ (typ.) @ VGS=-4.5V RDS(ON)=100mΩ (typ.) @ VGS=-2.5V • • • G Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)

2070-P

Abstract: IC tl 072 APM2070PD STD-020C 0118-B
Contextual Info: APM2070PD P-Channel Enhancement Mode MOSFET Features • Pin Description -20V/-3A, RDS ON =50mΩ(typ.) @ VGS=-4.5V RDS(ON)=70mΩ(typ.) @ VGS=-2.5V • • • G D S Super High Dense Cell Design Top View of SOT-89 Reliable and Rugged Lead Free Available (RoHS Compliant)

APM2040N

Abstract: APM2040NU STD-020C
Contextual Info: APM2040NU N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/10A, RDS ON =28mΩ (typ.) @ VGS=10V RDS(ON)=35mΩ (typ.) @ VGS=4.5V G RDS(ON)=55mΩ (typ.) @ VGS=2.5V • • • D S Super High Dense Cell Design Top View of TO-252 Reliable and Rugged

APM2070P

Abstract: APM2070PU STD-020C
Contextual Info: APM2070PU P-Channel Enhancement Mode MOSFET Features • Pin Description -20V/-8A, RDS ON =78mΩ (typ.) @ VGS=-10V RDS(ON)=113mΩ (typ.) @ VGS=-4.5V • • • G Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)

A102

Abstract: APM2007 APM2007N
Contextual Info: APM2007 N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/30A , RDS ON =6mΩ(typ.) @ VGS=10V RDS(ON)=8mΩ(typ.) @ VGS=4.5V RDS(ON)=16mΩ(typ.) @ VGS=2.5V • Super High Dense Cell Design for Extremely 1 2 3 G D S Low RDS(ON) • • Reliable and Rugged

APM2054N

Abstract: APM2054N equivalent apm2054n datasheet A102 APM2054NU STD-020C apm2054
Contextual Info: APM2054NU N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/20A, RDS ON =35mΩ (typ.) @ VGS=10V RDS(ON)=45mΩ (typ.) @ VGS=4.5V RDS(ON)=110mΩ (typ.) @ VGS=2.5V • • • G D S Super High Dense Cell Design Reliable and Rugged Top View of TO-252

APM2023N

Abstract: A102 APM2023NU STD-020C
Contextual Info: APM2023NU N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/30A, RDS ON =17mΩ (typ.) @ VGS=10V RDS(ON)=20mΩ (typ.) @ VGS=4.5V RDS(ON)=30mΩ (typ.) @ VGS=2.5V • • • G D S Super High Dense Cell Design Top View of TO-252 Reliable and Rugged

2095-P

Abstract: APM2095P equivalent APM2095P J-STD-020A 2095P
Contextual Info: APM2095P P-Channel Enhancement Mode MOSFET Features • Pin Description -20V/-3.6A , RDS ON =70mΩ(typ.) @ VGS=-4.5V RDS(ON)=100mΩ(typ.) @ VGS=-2.5V • Super High Dense Cell Design for Extremely Low RDS(ON) • • Reliable and Rugged TO-252 Package G

2070-P

Abstract: APM2070P APM2070PD BY 235
Contextual Info: APM2070PD P-Channel Enhancement Mode MOSFET Features • Pin Description -20V/-3A , RDS ON =50mΩ(typ.) @ VGS=-4.5V RDS(ON)=70mΩ(typ.) @ VGS=-2.5V • • Reliable and Rugged 1 2 3 G D S SOT-89 Package Top View of SOT-89 D Applications • Power Management in Notebook Computer ,

Contextual Info: APM2070PU P-Channel Enhancement Mode MOSFET Features • Pin Description -20V/-5A , RDS ON =78mΩ(typ.) @ VGS=-10V RDS(ON)=113mΩ(typ.) @ VGS=-4.5V • • • G Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)

APM2007N

Abstract: A102 APM2007NU STD-020C
Contextual Info: APM2007NU N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/50A, RDS ON =6mΩ (typ.) @ VGS=10V RDS(ON)=8mΩ (typ.) @ VGS=4.5V RDS(ON)=16mΩ (typ.) @ VGS=2.5V • • • G D S Super High Dense Cell Design Top View of TO-252 Reliable and Rugged

APM2034N

Abstract: APM2034NU A102 STD-020C
Contextual Info: APM2034NU N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/25A , RDS ON =20mΩ (typ.) @ VGS=4.5V RDS(ON)=30mΩ (typ.) @ VGS=2.5V • • • G Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)

APM2050N

Abstract: apm*2050n APM2050NU STD-020C
Contextual Info: APM2050NU N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/18A, RDS ON =25mΩ (typ.) @ VGS=10V RDS(ON)=30mΩ (typ.) @ VGS=4.5V G D RDS(ON)=50mΩ (typ.) @ VGS=2.5V • • • S Super High Dense Cell Design Top View of TO-252 Reliable and Rugged

IC tl 072

Abstract: APM2095PD STD-020C MOSFET SOT-89 package MIL-STD-883D-1005 2095-P
Contextual Info: APM2095PD P-Channel Enhancement Mode MOSFET Features • Pin Description -20V/-3A, RDS ON =75mΩ(typ.) @ VGS=-4.5V RDS(ON)=100mΩ(typ.) @ VGS=-2.5V • • • G D S Super High Dense Cell Design Top View of SOT-89 Reliable and Rugged Lead Free Available (RoHS Compliant)

APM2054N

Abstract: apm2054 APM2054N equivalent apm2054n datasheet transistor apm2054n equivalent transistor apm2054nv equivalent APM2054NV STD-020C APM205
Contextual Info: APM2054NV N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/5A, RDS ON = 35mΩ (typ.) @ VGS= 10V RDS(ON)= 45mΩ (typ.) @ VGS= 4.5V RDS(ON)= 110mΩ (typ.) @ VGS= 2.5V • • • Super High Dense Cell Design Top View of SOT-223 Reliable and Rugged

APM2071

Abstract: apm*2071 APM2071P APM2071PD sot-89 MARKING CODE 4A apm20 A0 SOT-89 1E4 SOT-89
Contextual Info: APM2071PD P-Channel Enhancement Mode MOSFET Features • Pin Description -20V/-4A, RDS ON =50mΩ(typ.) @ VGS=-4.5V G RDS(ON)=75mΩ(typ.) @ VGS=-2.5V • • • D Super High Dense Cell Design S Top View of SOT-89 Reliable and Rugged Lead Free and Green Devices Available

APM2095P

Abstract: APM2095P equivalent APM2095PU
Contextual Info: APM2095PU P-Channel Enhancement Mode MOSFET Features • Pin Description -20V/-8A, RDS ON =70mΩ (typ.) @ VGS=-4.5V G RDS(ON)=100mΩ (typ.) @ VGS=-2.5V • • • Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Lead Free and Green Devices Available

apm2050

Abstract: APM2050N apm*2050n APM2050ND A102 marking code IR SOT89 apm20
Contextual Info: APM2050ND N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/5A, RDS ON =25mΩ(Typ.) @ VGS=10V G RDS(ON)=30mΩ(Typ.) @ VGS=4.5V D RDS(ON)=50mΩ(Typ.) @ VGS=2.5V • • • S Top View of SOT-89 Super High Dense Cell Design Reliable and Rugged

STM9435

Abstract: AP4411 ao3411 EQUIVALENT STM8405 AP40N03H AP4936M stm4532 FDD6685 AP9960M APEC
Contextual Info: South Sea Semiconductor Cross Reference Guide Competitor SSS Competitor Part Number Part Number STU3055L2 APM2034NU ANPEC STU4030NL APM2512NU ANPEC STU4030NL APM3011NU ANPEC STU3030PL APM3020PU ANPEC APM3023N ANPEC STU3030NL APM4210K ANPEC SDM4410 APM4220K ANPEC

Contextual Info: plerowTM APM2017-P29 Low Noise & High OIP3 Medium Power Amplifier Module Features Description • S21 = 33.3 dB@2010 MHz = 32.7 dB@2025 MHz · NF of 2.0 dB over Frequency · Unconditionally Stable · High OIP3@Low Current Specifications Parameter Typ.@T = 25 C, Vs = 5 V, Freq. = 2017.5 MHz, Zo.sys = 50 ohms

APM2030N

Contextual Info: APM2030NU N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/25A, RDS ON =28mΩ (typ.) @ VGS=4.5V G RDS(ON)=38mΩ (typ.) @ VGS=2.5V • • • Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Lead Free and Green Devices Available

apm2070

Contextual Info: APM2070PD P-Channel Enhancement Mode MOSFET Features • Pin Description -20V/-3A, RDS ON =50mΩ(typ.) @ VGS=-4.5V RDS(ON)=70mΩ(typ.) @ VGS=-2.5V • • • Super High Dense Cell Design Top View of SOT-89 Reliable and Rugged Lead Free Available (RoHS Compliant)

2054n

Abstract: 2054-N ED750 APM2054N
Contextual Info: APM2054NV N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/5A, RDS ON = 35mW (typ.) @ VGS= 10V RDS(ON)= 45mW (typ.) @ VGS= 4.5V G RDS(ON)= 110mW (typ.) @ VGS= 2.5V • • Reliable and Rugged • Lead Free Available (RoHS Compliant) D S Super High Dense Cell Design