AP9997 Search Results
AP9997 Datasheets (7)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| AP9997AGH-HF | Advanced Power Electronics | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Original | 92.75KB | 4 | ||
| AP9997BGH-HF | Advanced Power Electronics | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Original | 125.2KB | 4 | ||
| AP9997BGJ-HF | Advanced Power Electronics | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Original | 125.2KB | 4 | ||
| AP9997GH-HF | Advanced Power Electronics | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Original | 96.11KB | 4 | ||
| AP9997GJ-HF | Advanced Power Electronics | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Original | 96.11KB | 4 | ||
| AP9997GK-HF | Advanced Power Electronics | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Original | 93.14KB | 4 | ||
| AP9997GP-HF | Advanced Power Electronics | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Original | 92.61KB | 4 |
AP9997 Price and Stock
Advanced Power Electronics Corp AP9997GH-HFAdvanced Power N-CHANNEL ENHANCEMENT MODE Power MOSFET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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AP9997GH-HF | 4,680 | 1 |
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AP9997GH-HF | 1,344 |
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AP9997GH-HF | 10,429 |
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APEM Inc AP9997GH-HFPOWER FIELD-EFFECT TRANSISTOR, 11A I(D), 100V, 0.12OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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AP9997GH-HF | 2,400 |
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| AP9997GH-HF | 2,400 |
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AP9997 Datasheets Context Search
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Contextual Info: AP9997GP-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower Gate Charge ▼ Fast Switching Characteristic BVDSS 100V RDS ON 120mΩ ID G 11A S Description Advanced Power MOSFETs from APEC provide the |
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ap9997gp-hfo-220100us100ms | |
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Contextual Info: AP9997GM RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Fast Switching Characteristic D2 D1 Single Drive Requirement Surface Mount Package BVDSS D2 95V RDS ON D1 110m ID 3A G2 SO-8 S1 S2 G1 Description Advanced Power MOSFETs from APEC provide the |
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Contextual Info: AP9997BGH/J-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS D Simple Drive Requirement 100V RDS ON Lower Gate Charge Fast Switching Characteristic Halogen Free & RoHS Compliant Product 145m ID G 9.3A |
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ap9997bgh/j-hfap9997bo-252100us+1 | |
AP9997GH
Abstract: AP9997 AP9997GJ
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ap9997gh/j-hfo-252ap9997gjo-251+4 | |
9997gpContextual Info: AP9997GP RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower Gate Charge ▼ Fast Switching Characteristic BVDSS 100V RDS ON 120mΩ ID G 11A S Description Advanced Power MOSFETs from APEC provide the designer with |
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Contextual Info: Advanced Power Electronics Corp. AP9997GK-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Req uirement D BV DSS Low Gate Charge 100V R DS ON Fast Switching Characteristics G RoHS-compliant, Halogen-free 120mΩ ID 3.2A S Description D Advanced Power MOSFETs from APEC provide the designer with the best |
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ap9997gk-hf-3ot-223ap99979997gk | |
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Contextual Info: AP9997AGH-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement BVDSS D 120V RDS ON Lower Gate Charge Fast Switching Characteristic ID G RoHS Compliant 185m 8.8A S Description Advanced Power MOSFETs from APEC provide the |
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ap9997agh-hfo-252100us100ms | |
9997GK
Abstract: AP9997 AP9997GK marking codes transistors SSs
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ap9997gkot-2239997gkap9997+1 | |
AP9997Contextual Info: AP9997BGH/J-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower Gate Charge ▼ Fast Switching Characteristic ▼ Halogen Free & RoHS Compliant Product BVDSS 100V RDS ON |
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ap9997bgh/j-hfap9997bo-252100us+2 | |
AP9997
Abstract: AP9997GK
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ap9997gkot-223100us100ms+1 | |
9997GH
Abstract: AP9997GH
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ap9997gh/j-hf-3o-252ap9997gh-hf-3o-251+5 | |
AP9997
Abstract: AP9997AGH AP9997AGH-HF apec
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ap9997agh-hfo-252100us100ms+3 | |
AP9997
Abstract: 9997GM AP9997GM
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ap9997gm9997gmap9997 | |
AP9997
Abstract: AP9997AGH-HF AP9997AGH iss-400 diode N-CHANNEL ENHANCEMENT MODE POWER MOSFET ap99
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9997GH
Abstract: AP9997GH AP9997 marking code 8A 10V11A MOSFET 450 TO-252 MOSFET
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ap9997gho-2529997ghap9997+4 | |
AP9997GH
Abstract: AP9997
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ap9997gh/jo-252ap9997gjo-251+4 | |
AP9997Contextual Info: AP9997GH/J-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement BVDSS D 100V RDS ON Lower Gate Charge Fast Switching Characteristic ID G RoHS Compliant & Halogen-Free 120m 11A S Description |
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ap9997gh/j-hfo-252ap9997gj100us+2 | |
AP9997GP-HFContextual Info: AP9997GP-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement BVDSS D RDS ON Lower Gate Charge Fast Switching Characteristic ID G 100V 120m 11A S Description Advanced Power MOSFETs from APEC provide the |
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ap9997gp-hfo-220100us100ms | |
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Contextual Info: AP9997GP RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement BVDSS D RDS ON Lower Gate Charge Fast Switching Characteristic ID G 100V 120m 11A S Description Advanced Power MOSFETs from APEC provide the |
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ap9997gpo-2209997gp | |
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Contextual Info: AP9997GK RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS Simple Drive Requirement D Lower Gate Charge 100V RDS ON Fast Switching Characteristic S 120m ID 3.2A D SOT-223 G Description D Advanced Power MOSFETs from APEC provide the |
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ap9997gkot-223100us100ms | |
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Contextual Info: AP9997GK-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower Gate Charge S ▼ Fast Switching Characteristic ▼ Halogen Free & RoHS Compliant Product SOT-223 D BVDSS 100V |
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ap9997gk-hfot-223100us100ms | |
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Contextual Info: Advanced Power Electronics Corp. AP9997GP-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D BV DSS Low Gate Charge 100V RDS ON Fast Switching Performance G ID RoHS-compliant, halogen-free 120mΩ 11A S Description Advanced Power MOSFETs from APEC provide the designer with the best |
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ap9997gp-hf-3o-220ap99979997gp | |
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Contextual Info: Advanced Power Electronics Corp. AP9997AGH-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D BV DSS Fast Switching Characteristics 120V R DS ON Low Gate Charge G 185mΩ ID RoHS-compliant, halogen-free 8.8A S Description G Advanced Power MOSFETs from APEC provide the designer with the best |
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ap9997agh-hf-3o-252ap9997a9997agh | |
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Contextual Info: LD7850 3/18/2010 High Voltage Step-Down White LED Driver REV: 00a General Description Features ‧ Input Voltage Range: 12V to 70V ‧ Hysteresis Mode Control ‧ Drive one string of LEDs, VO up to 60V ‧ No need output capacitor ‧ Analog Dimming Control |
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ld7850ld7850-ds-00a | |