AP607 Search Results

Contextual Info: PRELIMINARY 5 VOLT FlashFile MEMORY 28F160S5 and 28F320S5 x8/x16 Two 32-Byte Write Buffers — 2 \is per Byte Effective Programming Time Operating Voltage 5 V Vcc — — 5 V V pp 70 ns Read Access Time (16 Mbit) 90 ns Read Access Time (32 Mbit) High-Density Symmetrically-Blocked

DT28F016SA

Abstract: DD28F032SA 28F008SA 28F016SA 28F016SV 28F032SA 28F008SA-Compatible
Contextual Info: E 28F016SA 16-MBIT 1 MBIT X 16, 2 MBIT X 8 FlashFile MEMORY Includes Commercial and Extended Temperature Specifications n n n n n n n User-Selectable 3.3V or 5V V CC n User-Configurable x8 or x16 Operation 70 ns Maximum Access Time 28.6 MB/sec Burst Write Transfer Rate

28F016SA

Abstract: 28F016SV 28F160S3 28F160S5 28F320S3
Contextual Info: E ADVANCE INFORMATION WORD-WIDE FlashFile MEMORY FAMILY 28F160S3, 28F320S3 Includes Extended Temperature Specifications n n n n n n Two 32-Byte Write Buffers  2.7 µs per Byte Effective Programming Time Low Voltage Operation  2.7 V or 3.3 V V CC  2.7 V, 3.3 V or 5 V V PP

28F016SA

Abstract: 28F016SV 28F160S3 28F160S5 28F320S3 TSOP 56 LAYOUT CG-041493 32MB SIMM
Contextual Info: E ADVANCE INFORMATION WORD-WIDE FlashFile MEMORY FAMILY 28F160S3, 28F320S3 Includes Extended Temperature Specifications n n n n n n Two 32-Byte Write Buffers  2.7 µs per Byte Effective Programming Time Low Voltage Operation  2.7 V or 3.3 V V CC  2.7 V, 3.3 V or 5 V V PP

PLCC 32 intel package dimensions

Abstract: 845 bios chip intel 845 circuit diagram all chip TSOP 48 thermal resistance TSOP 48 LAYOUT ap623 am 28f040 AP-623 PCB Layout tsop 48 PIN SOCKET
Contextual Info: E AP-623 APPLICATION NOTE Multi-Site Layout Planning with Intel’s Boot Block Flash Memory December 1996 Order Number: 292178-003 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions of

DD28F032SA

Contextual Info: REFERENCE ONLY 32-MBIT FlashFile MEMORY DD28F032SA • User-Selectable 3.3 V or 5 V Vcc ■ User-Configurable x8 or xt6 Operation ■ 70 ns Maximum Access Time ■ 28.6 MB/sec Burst Write Transfer Rate ■ 1 Million Typical Erase Cycles per Block ■ 56-Lead, 1.2 x 14 x 20 mm Advanced

DT28F016SV080

Contextual Info: in t e i 16-MBIT Flash File MEMORY 28F016SV Includes Commercial and Extended Temperature Specifications • Sm artVoltage Techn o logy — U ser-Selectab le 3.3 V or 5 V V c c — U ser-Selectab le 5 V or 12 V V PP ■ Backw ards-Com patible with 28F016SA ,

160S5

Abstract: e28f160s5-70 IR3637 28F016SA 28F016SV 28F160S3 28F160S5 28F320S5 A0-A21 297372
Contextual Info: irrtel, ADVANCE INFORMATION WORD-WIDE FlashFile MEMORY FAMILY 28F160S5, 28F320S5 Includes Extended Temperature Specifications Two 32-Byte Write Buffers — 2 jxs per Byte Effective Programming Time Operating Voltage Cross-Compatible Command Support — Intel Standard Command Set

28F008SA

Abstract: 28F016SA 28F320J5 28F640J5 DD28F032SA NS480
Contextual Info: E SEE NEW DESIGN RECOMMENDATIONS REFERENCE ONLY 32-MBIT FlashFile MEMORY DD28F032SA n n n n n n n User-Selectable 3.3 V or 5 V V CC n User-Configurable x8 or x16 Operation 70 ns Maximum Access Time 28.6 MB/sec Burst Write Transfer Rate 1 Million Typical Erase Cycles per Block

DT28F320S5-90

Abstract: DT28F160S5-70 28F016SA 28F016SV 28F160S3 28F160S5 28F320S5 DT28F320S5-110 DT28F320S5 cfi commands
Contextual Info: E PRELIMINARY 5 VOLT FlashFile MEMORY 28F160S5 and 28F320S5 x8/x16 n n n n n n Two 32-Byte Write Buffers  2 µs per Byte Effective Programming Time Operating Voltage  5 V VCC  5 V VPP n n 70 ns Read Access Time (16 Mbit) 90 ns Read Access Time (32 Mbit)

Contextual Info: in te l DD28F032SA 32-MBIT 2 MBIT X 16, 4 MBIT X 8 FlashFile MEMORY User-Selectable 3.3V or 5V V qc User-Configurable x8 or x16 Operation 70 ns Maximum Access Time 28.6 MB/sec Burst Write Transfer Rate 1 Million Typical Erase Cycles per Block 56-Lead, 1.2 x 14 x 20 mm Advanced

28F008SA

Abstract: 28F016SA 28F320J5 28F640J5 DD28F032SA BSR4 equivalent 28F64
Contextual Info: E SEE NEW DESIGN RECOMMENDATIONS REFERENCE ONLY 32-MBIT FlashFile MEMORY DD28F032SA n n n n n n n User-Selectable 3.3 V or 5 V V CC n User-Configurable x8 or x16 Operation 70 ns Maximum Access Time 28.6 MB/sec Burst Write Transfer Rate 1 Million Typical Erase Cycles per Block

297372

Contextual Info: 28F016SV • SmartVoltage Technology — User-Selectable 3.3V or 5V Vcc — U s er-S electa b le 5 V o r 12V V PP ■ 65 ns Access Time ■ 1 Million Erase Cycles per Block ■ 30.8 MB/sec Burst Write Transfer Rate ■ Backwards-Compatible with 28F016SA, 28F008SA Command Set

ap393 "pin compatible"

Abstract: 297372
Contextual Info: 28F016SV • SmartVoltage Technology — User-Selectable 3.3V or 5V Vcc — User-Selectable 5V or 12V Vpp ■ 65 ns Access Time ■ 1 Million Erase Cycles per Block ■ 30.8 MB/sec Burst Write Transfer Rato ■ Backwards-Compatible with 28F016SA, 28F008SA Command Set

TE28F160S5-70

Abstract: 29048 dt28f160s570 290609-003
Contextual Info: WORD-WIDE FlashFile MEMORY FAMILY 28F160S5, 28F320S5 Includes Extended Temperature Specifications • ■ ■ Cross-Compatible Command Support Tw o 32-Byte Write Butters — 2 ¡as per Byte Effective Program m ing Tim e — Intel Standard Com m and Set

Contextual Info: in te i 28F016SV 16-MBIT 1 MBIT x 16,2 MBIT x 8 FlashFileTM MEMORY SmartVoltage Technology — User-Selectable 3.3V or 5V Vqc - U ser-Selectable 5V or 12V Vpp 65 ns Access Time 1 Million Erase Cycles per Block 30.8 MB/sec Burst Write Transfer Rate 0.48 MB/sec Sustainable Write Transfer

Contextual Info: 28F016SA The BYTE# pin allows either x8 or x16 read/writes to the 28F016SA. BYTE# at logic low selects 8-bit mode with address Ao selecting between low byte and high byte. On the other hand, BYTE# at logic high enables 16-bit operation with address Ai becoming the lowest order address and address

Contextual Info: in te l P R S U IM IO IiQ A Ifflf 28F016SA 16-MBIT 1 MBIT x 16, 2 MBIT x 8 FlashFile MEMORY • ■ ■ ■ ■ User-Selectable 3.3V or 5V Vcc ■ Revolutionary Architecture User-Configurable x8 or x16 Operation — Pipelined Command Execution 70 ns Maximum Access Time

Contextual Info: P R iy if flD I iO M Ÿ in te i EXTENDED TEMPERATURE 28F016SA 16-MBIT 1 MBIT x 16, 2 MBIT x 8 FlashFileTM MEMORY Extended Temperature Operation 40°C to +85°C User-Selectable 3.3V or 5V Vcc , „ , . „ User-Configurable x8 or x16 Operation 100 ns Maximum Access Time at 5V

DT28F016SA

Abstract: E28F016SA-070 BSR5
Contextual Info: 28F016SA 16-MBIT 1 MBIT X 16, 2 MBIT X 8 FlashFile MEMORY Includes Commercial and Extended Temperature Specifications • User-Selectable 3.3V or 5V Vcc ■ User-Configurable x8 or x16 Operation ■ Revolutionary Architecture — Pipelined Command Execution

AP607

Abstract: 29057 28F008SA
Contextual Info: intei A O m K K S l 0M F K ( S S l Ä 7 D@Cifl 28F016SV 16-MBIT (1 MBIT x 16,2 MBIT x 8 FlashFileTM MEMORY • SmartVoltage Technology — User-Selectable 3.3V or 5V Vcc — User-Selectable 5V or 12V Vpp ■ 65 ns Access Time ■ 1 Million Erase Cycles per Block

diode A14A

Abstract: BIOS 32 Pin PLCC 845 bios chip PLCC 32 intel package dimensions amd 29f040 thermal resistance INTEL FLASH MEMORY DATA SHEET transistor ap 431 tsop 28-LEAD Footprints picture in picture chip psop 1
Contextual Info: E AP-623 APPLICATION NOTE Multi-Site Layout Planning with Intel's Boot Block Flash Memory CHARLES ANYIMI SENIOR TECHNICAL MARKETING ENGINEER December 1995 Order Number: 292178-002 Information in this document is provided solely to enable use of Intel products. Intel assumes no liability whatsoever, including

28F008SA

Abstract: 28F016SA DD28F032SA intel DOC
Contextual Info: E PRELIMINARY DD28F032SA 32-MBIT 2 MBIT X 16, 4 MBIT X 8 FlashFile MEMORY User-Selectable 3.3V or 5V VCC User-Configurable x8 or x16 Operation 70 ns Maximum Access Time 28.6 MB/sec Burst Write Transfer Rate Revolutionary Architecture  100% Backwards-Compatible with

28F008SA

Abstract: 28F016SA DD28F032SA
Contextual Info: E n n n n n n n DD28F032SA 32-MBIT 2 MBIT X 16, 4 MBIT X 8 FlashFile MEMORY User-Selectable 3.3V or 5V V CC n User-Configurable x8 or x16 Operation 70 ns Maximum Access Time 28.6 MB/sec Burst Write Transfer Rate 1 Million Typical Erase Cycles per Block