AP488 Search Results
AP488 Datasheets (4)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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AP4880BGM-HF | Advanced Power Electronics | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Original | 58.68KB | 4 | ||
AP4880GM | Advanced Power Electronics | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Original | 81.7KB | 6 | ||
AP4880M | Advanced Power Electronics | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Original | 81.43KB | 6 | ||
AP4880M | Advanced Power Electronics | Power MOSFET | Original | 15.07KB | 1 |
AP488 Price and Stock
Daniels Manufacturing Corporation (DMC) THAP488-2Crimpers / Crimping Tools INSERT, POSITIONER AUTOMATIC |
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AP488 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: AP4880BGM-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant D D D D S S 30V RDS ON 9mΩ ID G SO-8 BVDSS |
Original |
AP4880BGM-HF 100us 100ms 125oC/W | |
Contextual Info: AP4880GEM Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Fast Switching Characteristic ▼ Low On-resistance D D D BVDSS 25V RDS ON 8.5mΩ ID ▼ RoHS Compliant SO-8 S S |
Original |
AP4880GEM 100ms 125/W | |
Contextual Info: AP4880BGM-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant D D D D S S 30V RDS ON 9mΩ ID G SO-8 BVDSS |
Original |
AP4880BGM-HF 100us 100ms 125oC/W | |
diode g25Contextual Info: AP4880AGM Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-Resistance D ▼ Fast Switching D D D ▼ Simple Drive Requirement G S SO-8 BVDSS 30V RDS ON 9mΩ ID 13A S S Description D D The Advanced Power MOSFETs from APEC provide the |
Original |
AP4880AGM 100ms 125oC/W diode g25 | |
AP4880MContextual Info: AP4880M Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-Resistance D ▼ Fast Switching D D D ▼ Simple Drive Requirement S S 25V RDS ON 8.5mΩ ID G SO-8 BVDSS 13A S Description D D The Advanced Power MOSFETs from APEC provide the |
Original |
AP4880M AP4880M | |
AP4880GMContextual Info: AP4880GM Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-Resistance D ▼ Fast Switching D D D ▼ Simple Drive Requirement S S 25V RDS ON 8.5mΩ ID G SO-8 BVDSS 13A S Description D D The Advanced Power MOSFETs from APEC provide the |
Original |
AP4880GM AP4880GM | |
Contextual Info: AP4880GEM Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS Simple Drive Requirement D Fast Switching Characteristic Low On-resistance D 25V RDS ON D D ID RoHS Compliant SO-8 S S S 8.5m 14A G Description |
Original |
AP4880GEM 100ms | |
Contextual Info: AP4880GM Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low On-Resistance D Fast Switching D D D G S S 25V RDS ON 8.5m ID Simple Drive Requirement SO-8 BVDSS 13A S Description D D The Advanced Power MOSFETs from APEC provide the |
Original |
AP4880GM | |
ATC93LC46
Abstract: db3 c502 sis645dx N351SX G4EE battery CR2025 SIS962 2n2222 -331 db3 c248 OSC32KHI
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N351SX SIS645DX SIS962 OZ6912 NS87391 NS87591 ATC93LC46 db3 c502 N351SX G4EE battery CR2025 2n2222 -331 db3 c248 OSC32KHI | |
b20 100 transister
Abstract: Z1312 sis650 U57A C816 C817 ac345 QT1608RL060HC-3A M961 uniwill
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SIS650 N243SAR31129 N243SA b20 100 transister Z1312 U57A C816 C817 ac345 QT1608RL060HC-3A M961 uniwill | |
STM9435
Abstract: AP4411 ao3411 EQUIVALENT STM8405 AP40N03H AP4936M stm4532 FDD6685 AP9960M APEC
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STU3055L2 APM2034NU STU4030NL APM2512NU APM3011NU STU3030PL APM3020PU APM3023N STU3030NL STM9435 AP4411 ao3411 EQUIVALENT STM8405 AP40N03H AP4936M stm4532 FDD6685 AP9960M APEC | |
N34BS1
Abstract: sis m650 QT2012RL-120 82-UA5000-06 SiS301 R468* Iso H1274 N34AS1 R1005 c223 uniwill
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R1037 R1040 R1021; C1008 R1000 C1012 R1022 2N7002 SIS962 pin49 N34BS1 sis m650 QT2012RL-120 82-UA5000-06 SiS301 R468* Iso H1274 N34AS1 R1005 c223 uniwill | |
QT1608RL060HC-3A
Abstract: sis m650 QT1608RL060HC E5 SMD OP SIS962 sis650 N243SS ICS952005 SiS 650 ac345
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N243SS M650-1 M650-2 M650-3 M650-4 SIS962-1 SIS962-2 SIS962-3 SIS962-4 ICS952001) QT1608RL060HC-3A sis m650 QT1608RL060HC E5 SMD OP SIS962 sis650 N243SS ICS952005 SiS 650 ac345 | |
semiconductor cross reference
Abstract: AP40N03H STM8405 AP4411 AP60N03H ap4503M Fairchild Cross Reference ao3411 AO3401 cross reference anpec Cross Reference
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STU3055L2 APM2034NU STU4030NL APM2512NU APM3011NU STU3030PL APM3020PU APM3023N STU3030NL semiconductor cross reference AP40N03H STM8405 AP4411 AP60N03H ap4503M Fairchild Cross Reference ao3411 AO3401 cross reference anpec Cross Reference | |
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SiS645
Abstract: db3 c914 db3 c918 2PC502 U5-13 pc545 RP5121 2n2222 -331 uniwill R671
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SIS645 SIS962 OZ6912 RTL8801) L373N1 db3 c914 db3 c918 2PC502 U5-13 pc545 RP5121 2n2222 -331 uniwill R671 | |
fb4212
Abstract: QT2012RL120HC 244II0 foxconn FB66 CH7011A-T mbs 33m alien h3 uniwill N038
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Original |
244II0 CY28346) CH7011A OZ6912) IEEE1394 NS87591( 2N7002 PR160 PR110 fb4212 QT2012RL120HC 244II0 foxconn FB66 CH7011A-T mbs 33m alien h3 uniwill N038 |