AP10 Search Results

Contextual Info: AP10N70R/P RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 600V RDS ON 0.6Ω ID G 10A S Description AP10N70 series are specially designed as main switching devices for

L130

Abstract: 1S136 1S95 AP107-81 SOIC-16 w50 schematic AP-107
Contextual Info: GaAs MMIC 1.9 GHz Power Amplifier in High Power Plastic Package AP107-81 Features • PCS TDMA 1S136 ■ PCS CDMA (1S95) ■ Linear Power Up to 31 dBm (PEP) ■ 6 Volt Operation ■ Efficiency Greater Than 30% 1,2 ■ High Power 16 Lead SOIC Package Electrical Specifications at 25°C

AP10N70

Contextual Info: AP10N70R/P-A Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Rated Test D ▼ Fast Switching Performance ▼ Simple Drive Requirement 650V RDS ON 0.6Ω ID G ▼ RoHS Compliant BVDSS 10A S

pt16311

Abstract: ST1117 KA1117 PT16315 ST3843 KA7500 pt16312 uc3842b equivalent AD16312 Anachip
Contextual Info: AnaChip Cross Reference Table See http://www.anachip.com/ Linear & switching regulator Anachip ON ST AP1117 ST1117 AP1084 ST1084 AP1184 AP1086 AP1186 AP033 AP431 ST431 AP432 ST432 AP3842 UC3842B ST3842 AP3843 UC3843B ST3843 AP3844 UC3844B ST3844 AP494 AP34063

laser diode 1625nm 50mW

Abstract: 1625nm 50mW 1625nm laser diode JOG-00441
Contextual Info: JOG-00441 OKI Electronics Components OL6204N-50/AP10 Rev.4 [May. 2002 ] 1625nm+/-10nm 50mW Pulsed MQW Laser Diode DIL Module with SMF. 1. DESCRIPTION OL6204N-50/AP10 is a 1625nm Laser Diode in DIL package with SMF. 2. FEATURES • · · · · Fiber output: Po=50mW

Contextual Info: 0043592 A P I A P I ELECTRONICS INC 26C 00227 ELECTRONICS INC 2b D «7*^ 1 D eT| □□43512 0000SS7 1 | COLLECTOR CURRENT = 5 AMPS PNP TYPES - CONTINUED Device No AP1043 AP1044 AP1045 AP1046 AP1056 AP1057 AP1058. AP1059 AP1088 AP1102 AP1103 AP1121 AP1135

Contextual Info: JOG-00106 OKI Electronics Components OL6204N-100/AP10 Rev.3 [May. 2002 ] 1625nm+/-10nm 100mW Pulsed MQW Laser Diode DIL Module with SMF. 1. DESCRIPTION OL6204N-100/AP10 is a 1625nm Laser Diode in DIL package with SMF. 2. FEATURES • · · · · Fiber output: Po=100mW

AP-108

Abstract: AP108
Contextual Info: 10/96 W oauoH ñ ' 384 Santa Trinità Ave. • Sunnyvale, CA C O M P O N E N T E • 94086 • Phone 408-522-3838 Fax 408-522-3839 1 to 150 MHz TO-8 Cascadable Am plifier 'Á V m AP108 Typical Values High Output P o w e r . High Third Order I.P. .

Contextual Info: AP10N70W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 600V RDS ON 0.6Ω ID G 10A S Description AP10N70 series are specially designed as main switching devices for

Contextual Info: GaAs MMIC Power Amplifier [jHAIph in S O I C 16 Plastic Package AP103-64 Features • Saturated Power Up To 31 dBm ■ 6 Volt Operation ■ Efficiency Up To 65% ■ Idle Current Typically Less Than 80 mA ■ On Chip Bias Network Converts - 4 Volt Supplies

Contextual Info: AP1088 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)130ö V(BR)CBO (V)175 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)

Contextual Info: AP1057 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)200ö V(BR)CBO (V)200 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)

Contextual Info: AP1099 2.4~2.5 GHz Power Amplifier 2004.11.01 Preliminary • Ultra LOW Current see below specs The AP1099 is a linear, low current power amplifier in ISM band utilizing InGaP /GaAs HBT process. It features a LOW current of 110mA, small signal gain of 25 dB, linear power of

Contextual Info: AP1060 450 MHz CDMA Power Amplifier 2008.01 Updated The AP1060 is a linear, highly efficient power amplifier utilizing InGaP/GaAs HBT process. It features high gain, and a linear power over 29 dBm under a 3.4V collector bias. The AP1060 is housed in a 4.0 x 4.0 x 0.8 mm ,

Contextual Info: AP1084 GSM Quad-band Module Quad-band GSM/GPRS PowerPA Amplifier Module 2004.05.05 Preliminary AP1084 is a compact 6mmx8mm Power Amplifier PA Multichip Module (MCM) designed for quad-band GSM cellular handset at the GSM850, GSM900, DCS1800 and PCS1900 mode. It also supports Class 12 General Packet

AP1062

Contextual Info: AP1062 RFIC Technology Corporation 450MHz Band CDMA Power Amplifier Module www.rfintc.com RFIC Preliminary 2008.07 The AP1062 Power Amplifier Module PAM is developed for CDMA2000 handsets and Wireless Local Loop applications at 450-460MHz frequency band. The

LR42272 ACTION PAK

Abstract: LR42272 Barber-Colman AP1080 1N4006 AP1090 C620 250mSec C620 diode current
Contextual Info: ACTION PAK AP1080 & AP1090 DC Input, Field Configurable Limit Alarms Provides Relay Contact Closures at a Preset DC Input Level Description Benefits Field Configurable Input Ranges for DC Voltage and Current Action Pak models AP1080 single setpoint and AP1090 dual setpoint limit alarms offer flexible,

Contextual Info: AP1005BSQ Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lead-Free Package D ▼ Low Conductance Loss ▼ Low Profile < 0.7mm BVDSS 25V RDS(ON) 3.8mΩ ID G 19A S Description The AP1005BSQ used the latest APEC Power MOSFET silicon

TO252-3L

Abstract: AP1086
Contextual Info: AP1086 1.5A Low Dropout Positive Adjustable or Fixed-Mode Regulator „ Features • • • • • „ General Description AP1086 is a low dropout positive adjustable or fixed-mode regulator with minimum of 1.5A output current capability. The product is specifically

Contextual Info: AP1001BSQ Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lead-Free Package D ▼ Low Conductance Loss ▼ Low Profile < 0.7mm BVDSS 25V RDS(ON) 6mΩ ID G 15A S Description The AP1001BSQ used the latest APEC Power MOSFET silicon

ap10 05 800

Contextual Info: JOG-00041 001 Optical Components OL6204N-80-AP10 Rev. 4 [ Mar. 2009 ] 1625nm+/-10nm 80mW Pulsed MQW Laser Diode DIL Module with SMF 1. DESCRIPTION OL6204N-80-AP10 is a 1625nm Laser Diode in DIL package with SMF. 2. FEATURES • Fiber output: Po=80mW · Pulsed MQW FP Laser

AP1086

Contextual Info: AP1086 1.5A Low Dropout Positive Adjustable or Fixed-Mode Regulator „ Features • • • • • „ General Description AP1086 is a low dropout positive adjustable or fixed-mode regulator with minimum of 1.5A output current capability. The product is specifically

OL6204N-80-AP10

Contextual Info: 001 JOG-00041 Optical Components OL6204N-80-AP10 Rev. 4 [ Mar. 2009 ] 1625nm+/-10nm 80mW Pulsed MQW Laser Diode DIL Module with SMF 1. DESCRIPTION OL6204N-80-AP10 is a 1625nm Laser Diode in DIL package with SMF. 2. FEATURES • Fiber output: Po=80mW · Pulsed MQW FP Laser

T568A AMP Universal Wiring CAT 5E

Abstract: 406330-1 406331-1 amp 406390-1 Amp NetConnect 5e 406330-1 25 pair wiring sheet 406390-1 406330 110Connect 569332-1
Contextual Info: AP10 44858 EC5 DataSheet Rev3B 4/3/02 2:18 PM Page 1 AMP NETCONNECT Enhanced Category 5 System AMP NETCONNECT Enhanced Category 5 Channel Performance AMP NETCONNECT Enhanced Cat 5 Cat 5e Increased PS ACR Enhanced Cat 5 Cat 5e PS ACR 70.0 dB 60.0 Power Su