AP02N60H Search Results
AP02N60H Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| AP02N60H | Advanced Power Electronics | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Original | 59.99KB | 4 | ||
| AP02N60H-HF | Advanced Power Electronics | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Original | 98.51KB | 4 | ||
| AP02N60H-H-HF | Advanced Power Electronics | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Original | 64.21KB | 4 |
AP02N60H Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
02N60
Abstract: 02N60J 02N60h 2529V
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Original |
ap02n60h/j-ho-252ap02n60j-ho-251+4 | |
ap02n60h
Abstract: AP02N60J
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Original |
ap02n60h/jo-252ap02n60jo-251+3 | |
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Contextual Info: AP02N60H/J RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low Gate Charge BVDSS D 100% Avalanche Test Simple Drive Requirement G 600V RDS ON 8 ID 1.6A S Description G D The TO-252 package is widely preferred for all commercial-industrial |
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ap02n60h/jo-252ap02n60jo-251+3 | |
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Contextual Info: AP02N60H/J-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Lower Gate Charge ▼ Simple Drive Requirement G ▼ RoHS Compliant BVDSS 600V RDS ON 8Ω ID 1.6A S Description G D The TO-252 package is widely preferred for all commercial-industrial |
Original |
ap02n60h/j-hfo-252ap02n60jo-251+3 | |
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Contextual Info: Advanced Power Electronics Corp. AP02N60H/J-H-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D Repetitive Avalanche Rated Fast Switching Speed G RoHS-compliant, halogen-free BV DSS 700V R DS ON 8.8Ω ID 1.4A S Description D (tab) Advanced Power MOSFETs from APEC provide the designer with the best |
Original |
ap02n60h/j-h-hf-3ap02n60h-h-hf-3o-252o-251+3 | |
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Contextual Info: AP02N60H/J-H RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D Lower Gate Charge Fast Switching Characteristic G Simple Drive Requirement BVDSS 700V RDS ON 8.8 ID 1.4A S Description G D The TO-252 package is widely preferred for all commercial-industrial |
Original |
ap02n60h/j-ho-252ap02n60j-ho-251+1 | |
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Contextual Info: Advanced Power Electronics Corp. AP02N60H/J-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D Repetitive Avalanche Rated Fast Switching Speed G RoHS-compliant, halogen-free BV DSS 600V R DS ON 8Ω ID 1.6A S Description D (tab) Advanced Power MOSFETs from APEC provide the designer with the best |
Original |
ap02n60h/j-hf-3o-252ap02n60h-hf-3o-251+3 | |
02N60J
Abstract: 02N60h 02N60 AP02N60J
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Original |
ap02n60h/jo-252ap02n60jo-251+3 | |
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Contextual Info: AP02N60H/J RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ 100% Avalanche Test ▼ Simple Drive Requirement G BVDSS 600V RDS ON 8Ω ID 1.6A S Description G D The TO-252 package is widely preferred for all commercial-industrial |
Original |
ap02n60h/jo-252ap02n60jo-251+3 | |
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Contextual Info: AP02N60H/J-H-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement G ▼ RoHS Compliant BVDSS 700V RDS ON 8.8Ω ID 1.4A S Description |
Original |
ap02n60h/j-h-hfo-252ap02n60j-h-hfo-251+3 |