AP01 Search Results
AP01 Datasheets (127)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AP-01 | Ohmite Mfg | LINE FILTER 110/250VAC 1A TH | Original | 452.27KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AP01 | Supertex | 8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode | Scan | 163.75KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AP0100AT2L00XPGA0 | Aptina Imaging | Image Sensors, Camera, Sensors, Transducers, IMAGE SENSOR MONO CMOS | Original | 2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AP0100AT2L00XUGA0-AM-DR |
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Integrated Circuits (ICs) - Linear - Video Processing - IC IMAGE SENSOR 1MP 100VFBGA | Original | 156.68KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AP0100AT2L00XUGA0-AM-DR1 |
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Integrated Circuits (ICs) - Linear - Video Processing - IC IMAGE SENSOR 1MP 100VFBGA | Original | 156.68KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AP0100AT2L00XUGA0-AM-TR |
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Integrated Circuits (ICs) - Linear - Video Processing - IC IMAGE SENSOR 1MP 100VFBGA | Original | 156.68KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AP0100AT2L00XUGA0-DR | onsemi | 1 MP CO-PROCESSOR | Original | 155.64KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AP0100AT2L00XUGA0-DR1 | onsemi | IMAGE SENSOR | Original | 155.64KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AP0100AT2L00XUGA0-TR | onsemi | IMAGE SENSOR | Original | 155.64KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AP0100AT2L00XUGAH3-GEVB |
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Development Boards, Kits, Programmers - Evaluation and Demonstration Boards and Kits - BOARD EVAL 1 MP CO-PROCESSOR HB | Original | 156.68KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AP0100CS2L00SPGA0 | Aptina Imaging | Image Sensors, Camera, Sensors, Transducers, IMAGE SENSOR MONO CMOS | Original | 4 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AP0100CS2L00SUGA0-DR | onsemi | IC IMAGE SENSOR 1MP 100VFBGA | Original | 154.57KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AP0100CS2L00SUGA0-DR1 |
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Integrated Circuits (ICs) - Linear - Video Processing - IC IMAGE SENSOR 1MP 100VFBGA | Original | 3.9MB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AP0101AT2L00XPGA0 | Aptina Imaging | Image Sensors, Camera, Sensors, Transducers, IMAGE SENSOR MONO CMOS | Original | 2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AP0101AT2L00XPGA0-AM-DR |
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Integrated Circuits (ICs) - Linear - Video Processing - IC IMAGE SENSOR 1MP 81VFBGA | Original | 156.15KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AP0101AT2L00XPGA0-AM-TR |
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Integrated Circuits (ICs) - Linear - Video Processing - IC IMAGE SENSOR 1MP 81VFBGA | Original | 156.15KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AP0101AT2L00XPGA0-DR | onsemi | IC VIDEO MONO CMOS 81VFBGA | Original | 155.15KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AP0101AT2L00XPGA0-TR | onsemi | IMAGE SENSOR MONO CMOS | Original | 155.15KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AP0101AT2L00XPGAH3-GEVB |
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Development Boards, Kits, Programmers - Evaluation and Demonstration Boards and Kits - BOARD EVAL 1 MP CO-PROCESSOR HB | Original | 156.15KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AP0101AT2L00XPGAH-GEVB |
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Development Boards, Kits, Programmers - Evaluation and Demonstration Boards and Kits - BOARD EVAL 1 MP CO-PROCESSOR HB | Original | 156.15KB |
AP01 Price and Stock
Abracon Corporation AIAP-01-470K-TFIXED IND 47UH 760MA 350 MOHM TH |
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AIAP-01-470K-T | Reel | 12,500 | 2,500 |
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Abracon Corporation AIAP-01-100K-TFIXED IND 10UH 1.5A 95 MOHM TH |
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AIAP-01-100K-T | Reel | 10,000 | 2,500 |
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Abracon Corporation AIAP-01-182K-TFIXED IND 1.8MH 120MA 14 OHM TH |
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AIAP-01-182K-T | Cut Tape | 9,213 | 1 |
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Abracon Corporation AIAP-01-2R2K-TFIXED IND 2.2UH 2.6A 31 MOHM TH |
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AIAP-01-2R2K-T | Cut Tape | 8,578 | 1 |
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Murata Manufacturing Co Ltd DE1E3RA472MN4AP01FCAP CER 4700PF 1.5KV RADIAL |
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DE1E3RA472MN4AP01F | Cut Tape | 8,561 | 1 |
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DE1E3RA472MN4AP01F | Bulk | 10 Weeks | 600 |
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AP01 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: AP0116 AP0132 AP0120 AP0140 mm_ 8-Channel MOSFET Array Monolithic P-Channel Enchancement Mode Ordering Information Order Number / Package b v dss/ Plastic -250V Max Plastic DIP SOW-20* -1.5nA — AP0116NA AP0116W G AP0116ND -15mA — — AP0120NA — AP0120ND |
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AP0116 AP0132 AP0120 AP0140 18-Lead AP0116NA AP0120NA AP0130NA AP0132NA AP0140NA | |
AP01L60AT
Abstract: RoHS-compliant Product Advanced MOSFET BVDSS 01L60
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AP01L60AT 160mA 01L60AT AP01L60AT RoHS-compliant Product Advanced MOSFET BVDSS 01L60 | |
AP01N60PContextual Info: AP01N60P Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Dynamic dv/dt Rating BVDSS 600V ▼ Repetitive Avalanche Rated RDS ON 8Ω ▼ Fast Switching ID 1.6A ▼ Simple Drive Requirement ▼ RoHS Compliant |
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AP01N60P O-220 O-220 100us 100ms AP01N60P | |
AP01L60JContextual Info: AP01L60H/J RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D Fast Switching Characteristics Simple Drive Requirement BVDSS 600V RDS ON 12 ID G 1A S Description The TO-252 package is widely preferred for commercial-industrial |
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AP01L60H/J O-252 AP01L60J) O-251 100us 100ms AP01L60J | |
Contextual Info: AP01N15GK-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D Lower Gate Charge Fast Switching Characteristic BVDSS 150V RDS ON 2.6 ID G Halogen Free & RoHS Compliant Product 700mA S |
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AP01N15GK-HF 700mA OT-223 OT-223 100us 100ms | |
Contextual Info: AP0103GMT-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D 40V BVDSS@Tj=125oC RDS ON SO-8 Compatible with Heatsink Low On-resistance ID G RoHS Compliant & Halogen-Free 2.55m 140A S |
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AP0103GMT-HF 125oC 100ms | |
Contextual Info: AP01L60H/J-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristics ▼ Simple Drive Requirement 600V RDS ON 12Ω ID G ▼ RoHS Compliant & Halogen-Free BVDSS |
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AP01L60H/J-HF O-252 AP01L60J) O-251 100us 100ms | |
Contextual Info: AP01L60T-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Fast Switching Characteristics ▼ Simple Drive Requirement BVDSS 600V RDS ON 12Ω ID G 160mA ▼ RoHS Compliant & Halogen-Free |
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AP01L60T-HF 160mA | |
Contextual Info: AP0132WG Transistors P-Channel Enhancement Mode MOSFET Array Military/High-RelN V BR DSS (V)320 V(BR)GSS (V)20 I(D) Max. (A)15m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)40m @Pulse Width (s) (Condition)300 Absolute Max. Power Diss. (W)1.4 |
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AP0132WG Junc-Case89 | |
Teledyne SemiconductorContextual Info: TELEDYNE 5SE COMPONENTS QQ0b372 7 • D - T - 4 3 -J S AP0120N, AP0130N, AP0140N SEMICONDUCTOR P-CHANNEL ENHANCEMENT MODE D-MOS FETs 8-CHANNEL ARRAYS ORDERING INFORMATION 18 Pin FHastfc DIP Description each channel APQ120NA AP0130NA AP0140NA |
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QQ0b372 AP0120N, AP0130N, AP0140N -800pA APQ120NA -200V, AP0130NA -300V, AP0140NA Teledyne Semiconductor | |
AP01CContextual Info: SANKEN ELECTRIC CO., LTD. AP01C 1. Scope The present specifications shall apply to an AP01C. 2. Outline Type Silicon Diode Structure Resin Molded Applications High Frequency Rectification 3. Flammability UL94V-0 Equivalent 040722 1/4 61426-01 SANKEN ELECTRIC CO., LTD. |
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AP01C AP01C. UL94V-0 AP01C | |
AP01L60JContextual Info: AP01L60H/J Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Repetitive Avalanche Rated D ▼ Fast Switching Speed ▼ Simple Drive Requirement 600V RDS ON 12Ω ID G ▼ RoHS Compliant BVDSS 1A S Description |
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AP01L60H/J O-252 AP01L60J) O-251 100us 100ms AP01L60J | |
b103gContextual Info: COnPONENT R ES E AR C H CO I S 3E 3303^3.1 oooob'îb D Component Research Company AP01 A-06-I7-U METALLIZED 1655 26th Street Santa Monica California 90404 Phone: 310 829-3615 FAX: (310)829-9584 Table 1 Specifications PLASTIC FILM CAPACITOR CASE DIMENSIONS |
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-06-I7-U b103g | |
Contextual Info: AP01N40J RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower Gate Charge D 100% Avalanche Rated Fast Switching Performance BVDSS 400V RDS ON 16 ID 0.5A G Simple Drive Requirement S Description Advanced Power MOSFETs from APEC provide the designer with the |
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AP01N40J O-251 100us 100ms | |
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AP0103Contextual Info: AP0103GMT-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D 40V BVDSS@Tj=125oC RDS ON ▼ SO-8 Compatible with Heatsink ▼ Low On-resistance ID G ▼ RoHS Compliant & Halogen-Free |
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AP0103GMT-HF 125oC 100us 100ms AP0103 | |
Contextual Info: AP01N15GK-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower Gate Charge ▼ Fast Switching Characteristic ▼ Halogen Free & RoHS Compliant Product BVDSS 150V RDS ON 2.6Ω |
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AP01N15GK-HF 700mA OT-223 10nce 100us 100ms | |
Contextual Info: AP01N60H/J-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristics ▼ Simple Drive Requirement G ▼ RoHS Compliant & Halogen-Free BVDSS 600V RDS ON 8Ω |
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AP01N60H/J-HF O-252 AP01N60J) O-251 100us 100ms | |
Contextual Info: AP01N40H/J-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge D ▼ 100% Avalanche Rated ▼ Fast Switching Performance G ▼ Simple Drive Requirement ▼ RoHS Compliant & Halogen-Free BVDSS |
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AP01N40H/J-HF AP01N40 O-252 100us 100ms | |
EIGHT MOSFET ARRAY
Abstract: EIGHT p-channel MOSFET ARRAY MOSFET ARRAY 15 pin octal MOSFET ARRAY AP0130NA T-43-25 mosfet array p channel MOSFET ARRAY T432 octal p-channel ARRAY
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AP0130NA T-43-25 AP0130NA EIGHT MOSFET ARRAY EIGHT p-channel MOSFET ARRAY MOSFET ARRAY 15 pin octal MOSFET ARRAY T-43-25 mosfet array p channel MOSFET ARRAY T432 octal p-channel ARRAY | |
Contextual Info: AP01L60T-H-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Fast Switching Characteristics ▼ Simple Drive Requirement G BVDSS 700V RDS ON 13.5Ω ID 160mA ▼ RoHS Compliant & Halogen-Free |
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AP01L60T-H-HF 160mA | |
Contextual Info: AP0103GP-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement BVDSS@Tj=125oC D RDS ON ▼ Lower On-resistance ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free ID G |
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AP0103GP-HF 125oC AP0103 O-220 100ms | |
Contextual Info: AP01L60T-H-HF RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low Gate Charge D Fast Switching Characteristics Simple Drive Requirement G BVDSS 700V RDS ON 13.5 ID 160mA RoHS Compliant & Halogen-Free S Description |
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AP01L60T-H-HF 160mA | |
Contextual Info: AP01L60T RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low Gate Charge D Fast Switching Characteristics Simple Drive Requirement BVDSS 600V RDS ON 12 ID G 160mA S Description Advanced Power MOSFETs utilized advanced processing techniques to |
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AP01L60T 160mA | |
AP01N60JContextual Info: AP01N60H/J Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Dynamic dv/dt Rating D ▼ Repetitive Avalanche Rated ▼ Fast Switching BVDSS 600V RDS ON 8Ω ID 1.6A G ▼ Simple Drive Requirement ▼ RoHS Compliant |
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AP01N60H/J O-252 AP01N60J) O-251 100us 100ms AP01N60J |