AP A7 SOT 23 Search Results

Contextual Info: BAV99LT1G, SBAV99LT1G, BAV99LT3G, SBAV99LT3G Dual Series Switching Diode http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements CASE 318

SBAV99

Abstract: SBAV99LT1G SBAV99LT3G BAV99LT1G
Contextual Info: BAV99LT1G, SBAV99LT1G, BAV99LT3G, SBAV99LT3G Dual Series Switching Diode http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements CASE 318

BAV99LT1G

Contextual Info: BAV99LT1G, SBAV99LT1G, BAV99LT3G, SBAV99LT3G Dual Series Switching Diode http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements CASE 318

Contextual Info: Philips Semiconductors Product Specification Octal bus transceiver/register; 3-state • • • • • • • Wide supply voltage range of 1.2 V to 3.6 V In accordance w ith the JEDEC 3.3 V ±0.3 V supply CMOS low power consum ption Flow-through pin-out

FMMD914

Abstract: FMMD6050 Z6 DIODE FMMD marking Z1 sot ZC830B BAL99 BAR99 sot-23 MARKING CODE A4 BAV70
Contextual Info: * FERRANTI semiconductors F M M D 914 High Speed Sw itching Diode D E S C R IP TIO N These devices are intend ed fo r high speed s w itc h in g ap p licatio n s. Encapsulated in th e p op u lar S O T -2 3 package th ese devices are designed s p e c ific a lly fo r use in th in and th ic k film

DIMM 1998

Abstract: SN74ALVC16835
Contextual Info: TI SN74ALVC16835 Component Specification Analysis for PC100 SCEA007 August 1998 1 IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest

agilent RF Marking 07

Abstract: AN1124 marking a4 SOT-143 marking code C4 Sot 23-5 HSMS-280X
Contextual Info: Surface Mount RF Schottky Barrier Diodes Technical Data HSMS-280x Series Features • Surface Mount Packages • High Breakdown Voltage • Low FIT Failure in Time Rate* • Six-sigma Quality Level • Single, Dual and Quad Versions • Tape and Reel Options

74106

Abstract: SBB2632D SBB2632E SBB2632P sot86b sot-86b Mullard ttl
Contextual Info: D EV ELO PM E N T SAMPLE D A T A T h is in fo r m a tic m a d e ìjv a 11a l 11.1 im p ly t h a ï th .' s d e riv e d f r o m d e v e io p rn o n SBB2632P.D.E e v a lu a t i o n . L; d o es n o t in 'ic e w ill go m t ) re q u la r pr 32 768-BIT STATIC READ ONLY MEMORY

1026Y

Abstract: Signetics OR Mullard SBB2633D SBB2633E SBB2633P sot86b
Contextual Info: DEVELOPMENT SAMPLE DATA SBB2633P SBB2633D SBB2633E T h i s i n f o r m a t io n is d e r iv e d F ro m d e v e lo p m e n t s a m p le s m a d e a v a ila b le f o r e v a lu a t i o n . I t d o e s n o t n e c e s s a r i ly im p l y t h a t t h e d e v ic e w i l l g o in t o r e g u la r p r o d u c t i o n .

Diode Marking z3 SOT-23

Abstract: dual diode marking A3 code J4 diode W6 13A Diode marking J6 transistors diode marking x6 sot-23 MARKING CODE j3 marking W6 diode BAV-99 j4 DIODE schottky sot 23
Contextual Info: FERRANTI i semiconductors ZC830A Series S ilic o n Variable C ap a citan ce D iodes DESCRIPTION These silicon ion-im planted hyperabrupt tuning diodes are intended fo r use in HF, VH F and UHF electronic tuning and frequency control applications w here large capaci­

lc3518

Abstract: LC3518B lc3518bl LC3518B15 LC3518BSL IC351 lc3516 lc3518b-15 3518-B BS1215
Contextual Info: SANYO S E M I C O N D U C T O R CO RP S3E ]> • ? e5c57D7b G G I O I O S 311 » T S A J Ordering number. EN37SS| CMOS LSI í LC3518B. BM. BS, BL, BML, BSL SAßYO, 'w -Ä - ■r: - - i 2048-word x 8-bit CMOS Static RAM i OVERVIEW PACKAGE DIMENSIONS LC3518B series devices are silicon-gate CM OS, static

RA5B

Abstract: DIMM 1998 SN74ALVC162334 SN74ALVC162835 SN74ALVC162836 SN74ALVC16334 SN74ALVC16835 RA2A equivalent
Contextual Info: Logic Solutions for PC100 SDRAM Registered DIMMs SMOA001A May 1998 1 IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest

marking A5 sot363

Abstract: marking code C4 Sot 23-5 marking code diode ak
Contextual Info: Surface Mount RF Schottky Barrier Diodes Technical Data HSMS-280x Series Features • Surface Mount Packages • High Breakdown Voltage • Low FIT Failure in Time Rate* • Six-sigma Quality Level • Single, Dual and Quad Versions • Tape and Reel Options

marking code C4 Sot 23-5

Abstract: sot143 marking code A5 2805 diode bridge Marking Code ABC SOT 143 footprint SOT-363 a7 DIODES SC-70 MARKING C3 Analog devices code marking AB marking code tc sot 363 diode marking code C3 sot23
Contextual Info: Surface Mount RF Schottky Barrier Diodes Technical Data HSMS-280x Series Features • Surface Mount Packages • High Breakdown Voltage • Low FIT Failure in Time Rate* • Six-sigma Quality Level • Single, Dual and Quad Versions • Tape and Reel Options

SOT-363 a7

Abstract: marking A5 sot363 marking code C4 Sot 23-5 DIODES SC-70 MARKING C3 SOT 363 marking CODE a7 AVAGO DATE CODE MARKING AVAGO DATE CODE MARKING symbol
Contextual Info: HSMS-280x Surface Mount RF Schottky Barrier Diodes Data Sheet Description/Applications Features These Schottky diodes are specifically designed for both analog and digital applications. This series offers a wide range of specifications and package configurations to give the designer wide flexibility. The

sot-23 Marking A4

Abstract: marking a8 SOP-8 AP432 431 sot89 marking marking R1B
Contextual Info: AP431/AP431A ADJUSTABLE PRECISION SHUNT REGULATOR Features • • • • • • • • • • • Description Precision reference voltage AP431 : 2.495V ± 1% AP431A : 2.495V ± 0.5% Sink current capability: 200mA Minimum cathode current for regulation: 300µA

Contextual Info: White Electronic Designs WV3HG64M32EEU-D4 ADVANCED* 256MB – 64Mx32 DDR2 SDRAM UNBUFFERED FEATURES DESCRIPTION 200-pin, Small-Outline DIMM SO-DIMM The WV3HG64M32EEU is a 64Mx32 Double Data Rate 2 SDRAM memory module based on 256Mb DDR2 SDRAM components. The module consists of four 64Mx8,

marvell 88SA8040

Abstract: PC87541 quanta foxconn quanta computer TPS2231 88sa8040 T43 88SA8040 AO3402 LDS-A50R
Contextual Info: 5 4 3 2 1 D D C C B B A A 5 4 3 2 1 5 4 3 2 1 EC LIST - B to C test : D EC1-EC2-EC3-EC4-EC5-EC6- Page Page Page Page Page Page 14 16 23 28 32 37 - Change LCD ID pull-high resistor R41 R23 R22 from 10K to 1K ohm for ATI suggestion - Remove LCD ID pull-high resistor R52 & pull-low resistor R390 R62

sot248

Abstract: rolling code philips diode sg 5 ts
Contextual Info: Philips Sem iconductors Prelim inary specification Single-chip Teletext and VPS decoder IVT1.0VPS SAA5248 FEATURES • Complete Teletext and VPS decoder in a 52-pin shrink DIL, or 64-pin QFP, integrated circuit n f f f p Li ? : l m \ BUSI • Separate storage of VPS data (PDC System A) and

Contextual Info: White Electronic Designs WV3HG64M32EEU-D4 ADVANCED* 256MB – 64Mx32 DDR2 SDRAM UNBUFFERED FEATURES DESCRIPTION 200-pin, Small-Outline DIMM SO-DIMM The WV3HG64M32EEU is a 64Mx32 Double Data Rate 2 SDRAM memory module based on 512Mb DDR2 SDRAM components. The module consists of four 64Mx8,

Contextual Info: White Electronic Designs WV3HG64M64EEU-D4 ADVANCED* 512MB – 64Mx64 DDR2 SDRAM UNBUFFERED FEATURES DESCRIPTION 200-pin, Small-Outline DIMM SO-DIMM The WV3HG64M64EEU is a 64Mx64 Double Data Rate 2 SDRAM memory module based on 256Mb DDR2 SDRAM components. The module consists of eight 64Mx8, in

Contextual Info: White Electronic Designs WV3HG64M32EEU-D4 ADVANCED* 256MB – 64Mx32 DDR2 SDRAM UNBUFFERED FEATURES DESCRIPTION 200-pin, Small-Outline DIMM SO-DIMM The WV3HG64M32EEU is a 64Mx32 Double Data Rate 2 SDRAM memory module based on 512Mb DDR2 SDRAM components. The module consists of four 64Mx8,

PC2-3200

Abstract: PC2-5300 WV3HG64M32EEU-D4 U37Y
Contextual Info: White Electronic Designs WV3HG64M32EEU-D4 ADVANCED* 256MB – 64Mx32 DDR2 SDRAM UNBUFFERED FEATURES DESCRIPTION 200-pin, Small-Outline DIMM SO-DIMM The WV3HG64M32EEU is a 64Mx32 Double Data Rate 2 SDRAM memory module based on 512Mb DDR2 SDRAM components. The module consists of four 64Mx8,

Contextual Info: White Electronic Designs WV3HG64M64EEU-D4 ADVANCED* 512MB – 64Mx64 DDR2 SDRAM UNBUFFERED FEATURES DESCRIPTION 200-pin, Small-Outline DIMM SO-DIMM The WV3HG64M64EEU is a 64Mx64 Double Data Rate 2 SDRAM memory module based on 256Mb DDR2 SDRAM components. The module consists of eight 64Mx8, in