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    AP A7 SOT 23 Search Results

    AP A7 SOT 23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MKZ36V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 36 V, SOT-23 Datasheet
    MUZ6V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, SOT-323 Datasheet
    MKZ30V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 30 V, SOT-23 Datasheet
    MSZ36V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 36 V, SOT-346 Datasheet
    MKZ5V6
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, SOT-23 Datasheet

    AP A7 SOT 23 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: BAV99LT1G, SBAV99LT1G, BAV99LT3G, SBAV99LT3G Dual Series Switching Diode http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements CASE 318


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    BAV99LT1G, SBAV99LT1G, BAV99LT3G, SBAV99LT3G AEC-Q101 BAV99LT1/D PDF

    SBAV99

    Abstract: SBAV99LT1G SBAV99LT3G BAV99LT1G
    Contextual Info: BAV99LT1G, SBAV99LT1G, BAV99LT3G, SBAV99LT3G Dual Series Switching Diode http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements CASE 318


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    BAV99LT1G, SBAV99LT1G, BAV99LT3G, SBAV99LT3G AEC-Q101 BAV99LT1/D SBAV99 SBAV99LT1G BAV99LT1G PDF

    BAV99LT1G

    Contextual Info: BAV99LT1G, SBAV99LT1G, BAV99LT3G, SBAV99LT3G Dual Series Switching Diode http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements CASE 318


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    BAV99LT1G, SBAV99LT1G, BAV99LT3G, SBAV99LT3G BAV99LT1/D BAV99LT1G PDF

    Contextual Info: Philips Semiconductors Product Specification Octal bus transceiver/register; 3-state • • • • • • • Wide supply voltage range of 1.2 V to 3.6 V In accordance w ith the JEDEC 3.3 V ±0.3 V supply CMOS low power consum ption Flow-through pin-out


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    74HL33646 PDF

    FMMD914

    Abstract: FMMD6050 Z6 DIODE FMMD marking Z1 sot ZC830B BAL99 BAR99 sot-23 MARKING CODE A4 BAV70
    Contextual Info: * FERRANTI semiconductors F M M D 914 High Speed Sw itching Diode D E S C R IP TIO N These devices are intend ed fo r high speed s w itc h in g ap p licatio n s. Encapsulated in th e p op u lar S O T -2 3 package th ese devices are designed s p e c ific a lly fo r use in th in and th ic k film


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    OT-23 C9/C20 50MHz ZC830A ZC831A ZC832A ZC833A ZC834A ZC835A FMMD914 FMMD6050 Z6 DIODE FMMD marking Z1 sot ZC830B BAL99 BAR99 sot-23 MARKING CODE A4 BAV70 PDF

    agilent RF Marking 07

    Abstract: AN1124 marking a4 SOT-143 marking code C4 Sot 23-5 HSMS-280X
    Contextual Info: Surface Mount RF Schottky Barrier Diodes Technical Data HSMS-280x Series Features • Surface Mount Packages • High Breakdown Voltage • Low FIT Failure in Time Rate* • Six-sigma Quality Level • Single, Dual and Quad Versions • Tape and Reel Options


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    HSMS-280x OT-23/SOT-143 5968-2356E, 5968-5943E 5968-7960E agilent RF Marking 07 AN1124 marking a4 SOT-143 marking code C4 Sot 23-5 PDF

    74106

    Abstract: SBB2632D SBB2632E SBB2632P sot86b sot-86b Mullard ttl
    Contextual Info: D EV ELO PM E N T SAMPLE D A T A T h is in fo r m a tic m a d e ìjv a 11a l 11.1 im p ly t h a ï th .' s d e riv e d f r o m d e v e io p rn o n SBB2632P.D.E e v a lu a t i o n . L; d o es n o t in 'ic e w ill go m t ) re q u la r pr 32 768-BIT STATIC READ ONLY MEMORY


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    SBB2632P 768-BIT SBB2632 M82-2113/RE 74106 SBB2632D SBB2632E sot86b sot-86b Mullard ttl PDF

    1026Y

    Abstract: Signetics OR Mullard SBB2633D SBB2633E SBB2633P sot86b
    Contextual Info: DEVELOPMENT SAMPLE DATA SBB2633P SBB2633D SBB2633E T h i s i n f o r m a t io n is d e r iv e d F ro m d e v e lo p m e n t s a m p le s m a d e a v a ila b le f o r e v a lu a t i o n . I t d o e s n o t n e c e s s a r i ly im p l y t h a t t h e d e v ic e w i l l g o in t o r e g u la r p r o d u c t i o n .


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    SBB2633P SBB2633D SBB2633E SBB2633 24-lead OT-101) SBB2633P, OT-94) SBB2633D 24-ILEAD 1026Y Signetics OR Mullard SBB2633E sot86b PDF

    Diode Marking z3 SOT-23

    Abstract: dual diode marking A3 code J4 diode W6 13A Diode marking J6 transistors diode marking x6 sot-23 MARKING CODE j3 marking W6 diode BAV-99 j4 DIODE schottky sot 23
    Contextual Info: FERRANTI i semiconductors ZC830A Series S ilic o n Variable C ap a citan ce D iodes DESCRIPTION These silicon ion-im planted hyperabrupt tuning diodes are intended fo r use in HF, VH F and UHF electronic tuning and frequency control applications w here large capaci­


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    ZC830A OT-23 C9/C20 50MHz ZC831A ZC832A ZC833A Diode Marking z3 SOT-23 dual diode marking A3 code J4 diode W6 13A Diode marking J6 transistors diode marking x6 sot-23 MARKING CODE j3 marking W6 diode BAV-99 j4 DIODE schottky sot 23 PDF

    lc3518

    Abstract: LC3518B lc3518bl LC3518B15 LC3518BSL IC351 lc3516 lc3518b-15 3518-B BS1215
    Contextual Info: SANYO S E M I C O N D U C T O R CO RP S3E ]> • ? e5c57D7b G G I O I O S 311 » T S A J Ordering number. EN37SS| CMOS LSI í LC3518B. BM. BS, BL, BML, BSL SAßYO, 'w -Ä - ■r: - - i 2048-word x 8-bit CMOS Static RAM i OVERVIEW PACKAGE DIMENSIONS LC3518B series devices are silicon-gate CM OS, static


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    57D7b EN37SS| LC3518B. 2048-word LC3518B LC3S18B LC3518BL, LC3518BM LC3518BSL LC3518B/BM/BS-12/15 lc3518 lc3518bl LC3518B15 IC351 lc3516 lc3518b-15 3518-B BS1215 PDF

    marking A5 sot363

    Abstract: marking code C4 Sot 23-5 marking code diode ak
    Contextual Info: Surface Mount RF Schottky Barrier Diodes Technical Data HSMS-280x Series Features • Surface Mount Packages • High Breakdown Voltage • Low FIT Failure in Time Rate* • Six-sigma Quality Level • Single, Dual and Quad Versions • Tape and Reel Options


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    HSMS-280x OT-23/SOT-143 analog025 5989-0474EN 5989-2492EN marking A5 sot363 marking code C4 Sot 23-5 marking code diode ak PDF

    marking code C4 Sot 23-5

    Abstract: sot143 marking code A5 2805 diode bridge Marking Code ABC SOT 143 footprint SOT-363 a7 DIODES SC-70 MARKING C3 Analog devices code marking AB marking code tc sot 363 diode marking code C3 sot23
    Contextual Info: Surface Mount RF Schottky Barrier Diodes Technical Data HSMS-280x Series Features • Surface Mount Packages • High Breakdown Voltage • Low FIT Failure in Time Rate* • Six-sigma Quality Level • Single, Dual and Quad Versions • Tape and Reel Options


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    HSMS-280x OT-23/SOT-143 d70-3 OT-363 SC70-6 5968-7960E 5989-0474EN marking code C4 Sot 23-5 sot143 marking code A5 2805 diode bridge Marking Code ABC SOT 143 footprint SOT-363 a7 DIODES SC-70 MARKING C3 Analog devices code marking AB marking code tc sot 363 diode marking code C3 sot23 PDF

    marking a4 SOT-143

    Abstract: SOT 143 footprint sc70-3 PCB PAD A5 sot-23 single DIODE 2805 diode bridge marking code C4 Sot 23-5 sot143 marking code A3
    Contextual Info: Agilent HSMS-280x Surface Mount RF Schottky Barrier Diodes Data Sheet Features • Surface Mount Packages • High Breakdown Voltage • Low FIT Failure in Time Rate* Description/Applications Package Lead Code Identification, SOT-323 (Top View) These Schottky diodes are


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    HSMS-280x OT-323 HSMS-280x OT-363 SC70-6 5989-2492EN 5989-4020EN marking a4 SOT-143 SOT 143 footprint sc70-3 PCB PAD A5 sot-23 single DIODE 2805 diode bridge marking code C4 Sot 23-5 sot143 marking code A3 PDF

    SOT-363 a7

    Abstract: marking A5 sot363 marking code C4 Sot 23-5 DIODES SC-70 MARKING C3 SOT 363 marking CODE a7 AVAGO DATE CODE MARKING AVAGO DATE CODE MARKING symbol
    Contextual Info: HSMS-280x Surface Mount RF Schottky Barrier Diodes Data Sheet Description/Applications Features These Schottky diodes are specifically designed for both analog and digital applications. This series offers a wide range of specifications and package configurations to give the designer wide flexibility. The


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    HSMS-280x HSMS-280x OT-323 SC70-3 OT-363 SC70-6 5989-2492EN 5989-4020EN SOT-363 a7 marking A5 sot363 marking code C4 Sot 23-5 DIODES SC-70 MARKING C3 SOT 363 marking CODE a7 AVAGO DATE CODE MARKING AVAGO DATE CODE MARKING symbol PDF

    Contextual Info: White Electronic Designs WV3HG64M32EEU-D4 ADVANCED* 256MB 64Mx32 DDR2 SDRAM UNBUFFERED FEATURES DESCRIPTION 200-pin, Small-Outline DIMM SO-DIMM The WV3HG64M32EEU is a 64Mx32 Double Data Rate 2 SDRAM memory module based on 256Mb DDR2 SDRAM components. The module consists of four 64Mx8,


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    WV3HG64M32EEU-D4 256MB 64Mx32 200-pin, PC2-5300* PC2-4200 PC2-3200 18-compatible) PDF

    marvell 88SA8040

    Abstract: PC87541 quanta foxconn quanta computer TPS2231 88sa8040 T43 88SA8040 AO3402 LDS-A50R
    Contextual Info: 5 4 3 2 1 D D C C B B A A 5 4 3 2 1 5 4 3 2 1 EC LIST - B to C test : D EC1-EC2-EC3-EC4-EC5-EC6- Page Page Page Page Page Page 14 16 23 28 32 37 - Change LCD ID pull-high resistor R41 R23 R22 from 10K to 1K ohm for ATI suggestion - Remove LCD ID pull-high resistor R52 & pull-low resistor R390 R62


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    CV01044MZ18 CV-8237TZ09 Page25 1U/25V/0603/X7R 0R/0603 680K/0603 IMD2AT108 LP2951ACMX 1U/10V/0603/X5R CH5103K9901 marvell 88SA8040 PC87541 quanta foxconn quanta computer TPS2231 88sa8040 T43 88SA8040 AO3402 LDS-A50R PDF

    Contextual Info: White Electronic Designs WV3HG64M32EEU-D4 ADVANCED* 256MB 64Mx32 DDR2 SDRAM UNBUFFERED FEATURES DESCRIPTION 200-pin, Small-Outline DIMM SO-DIMM The WV3HG64M32EEU is a 64Mx32 Double Data Rate 2 SDRAM memory module based on 512Mb DDR2 SDRAM components. The module consists of four 64Mx8,


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    WV3HG64M32EEU-D4 256MB 64Mx32 200-pin, PC2-5300* PC2-4200 PC2-3200 18-compatible) PDF

    Contextual Info: White Electronic Designs WV3HG64M64EEU-D4 ADVANCED* 512MB 64Mx64 DDR2 SDRAM UNBUFFERED FEATURES DESCRIPTION 200-pin, Small-Outline DIMM SO-DIMM The WV3HG64M64EEU is a 64Mx64 Double Data Rate 2 SDRAM memory module based on 256Mb DDR2 SDRAM components. The module consists of eight 64Mx8, in


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    WV3HG64M64EEU-D4 512MB 64Mx64 200-pin, PC2-5300* PC2-4200 PC2-3200 18-compatible) PDF

    Contextual Info: White Electronic Designs WV3HG64M32EEU-D4 ADVANCED* 256MB 64Mx32 DDR2 SDRAM UNBUFFERED FEATURES DESCRIPTION 200-pin, Small-Outline DIMM SO-DIMM The WV3HG64M32EEU is a 64Mx32 Double Data Rate 2 SDRAM memory module based on 512Mb DDR2 SDRAM components. The module consists of four 64Mx8,


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    WV3HG64M32EEU-D4 256MB 64Mx32 200-pin, PC2-5300* PC2-4200 PC2-3200 18-compatible) PDF

    PC2-3200

    Abstract: PC2-5300 WV3HG64M32EEU-D4 U37Y
    Contextual Info: White Electronic Designs WV3HG64M32EEU-D4 ADVANCED* 256MB 64Mx32 DDR2 SDRAM UNBUFFERED FEATURES DESCRIPTION 200-pin, Small-Outline DIMM SO-DIMM The WV3HG64M32EEU is a 64Mx32 Double Data Rate 2 SDRAM memory module based on 512Mb DDR2 SDRAM components. The module consists of four 64Mx8,


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    WV3HG64M32EEU-D4 256MB 64Mx32 200-pin, WV3HG64M32EEU 512Mb 64Mx8, PC2-5300* PC2-4200 PC2-3200 PC2-5300 WV3HG64M32EEU-D4 U37Y PDF

    Contextual Info: White Electronic Designs WV3HG64M64EEU-D4 ADVANCED* 512MB 64Mx64 DDR2 SDRAM UNBUFFERED FEATURES DESCRIPTION 200-pin, Small-Outline DIMM SO-DIMM The WV3HG64M64EEU is a 64Mx64 Double Data Rate 2 SDRAM memory module based on 256Mb DDR2 SDRAM components. The module consists of eight 64Mx8, in


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    WV3HG64M64EEU-D4 512MB 64Mx64 200-pin, PC2-5300* PC2-4200 PC2-3200 18-compatible) PDF

    MBL8031

    Abstract: INTEL MCS-80 MBL8051AH intel 8031 instruction set MBL8051 CER72F R77f MBL8031AH Fujitsu IR c code
    Contextual Info: FU JITSU Advanced Products October 1986 • MBL8 0 5 1 AH, MBL8 0 3 1 AH Edi,ion3° NMOS Single-Chip 8-Bit Microcomputer Description The Fujitsu MBL8051AH/8031 AH are single-chip 8-bit micro­ computers developed as members of the MBL8051 Series. These microcomputers have powerful architecture and instruction set


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    MBL8051AH/8031 MBL8051 MBL8051AH 16-bit MBL8031 th10TCLCL-133 2TCLCL-117 10TCLCL-133 IP-40C D40005S-1C INTEL MCS-80 intel 8031 instruction set CER72F R77f MBL8031AH Fujitsu IR c code PDF

    Contextual Info: White Electronic Designs W3HG2128M64EEU-D4 2GB – 2x128Mx64 DDR2 SDRAM UNBUFFERED FEATURES DESCRIPTION „ Unbuffered 200-pin, dual in-line memory module SO-DIMM „ Fast data transfer rates: PC2-5300, PC2-4200 and PC2-3200 „ Based or Raw Card E design architecture


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    W3HG2128M64EEU-D4 2x128Mx64 200-pin, W3HG2128M64EEU 128Mx8 200-pin PC2-5300, PC2-4200 PC2-3200 PDF

    Contextual Info: White Electronic Designs W3HG232M64SEU-D4 ADVANCED* 512MB 2x32Mx64 DDR2 SDRAM UNBUFFERED FEATURES DESCRIPTION „ Unbuffered 200-pin, Small-Outline DIMM SODIMM Raw card A „ Fast data transfer rates: PC2-6400*, PC2-5300, PC2-4200 and PC2-3200 „ Utilizes 800*, 667, 533 and 400 MT/s DDR2


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    W3HG232M64SEU-D4 512MB 2x32Mx64 200-pin, W3HG232M64SEU 32Mx16, 32Mx64 PC2-6400* PDF