AP A7 SOT 23 Search Results

Contextual Info: BAV99LT1G, SBAV99LT1G, BAV99LT3G, SBAV99LT3G Dual Series Switching Diode http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements CASE 318

SBAV99

Abstract: SBAV99LT1G SBAV99LT3G BAV99LT1G
Contextual Info: BAV99LT1G, SBAV99LT1G, BAV99LT3G, SBAV99LT3G Dual Series Switching Diode http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements CASE 318

BAV99LT1G

Contextual Info: BAV99LT1G, SBAV99LT1G, BAV99LT3G, SBAV99LT3G Dual Series Switching Diode http://onsemi.com Features • AEC−Q101 Qualified and PPAP Capable  S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements CASE 318

Contextual Info: Philips Semiconductors Product Specification Octal bus transceiver/register; 3-state • • • • • • • Wide supply voltage range of 1.2 V to 3.6 V In accordance w ith the JEDEC 3.3 V ±0.3 V supply CMOS low power consum ption Flow-through pin-out

FMMD914

Abstract: FMMD6050 Z6 DIODE FMMD marking Z1 sot ZC830B BAL99 BAR99 sot-23 MARKING CODE A4 BAV70
Contextual Info: * FERRANTI semiconductors F M M D 914 High Speed Sw itching Diode D E S C R IP TIO N These devices are intend ed fo r high speed s w itc h in g ap p licatio n s. Encapsulated in th e p op u lar S O T -2 3 package th ese devices are designed s p e c ific a lly fo r use in th in and th ic k film

agilent RF Marking 07

Abstract: AN1124 marking a4 SOT-143 marking code C4 Sot 23-5 HSMS-280X
Contextual Info: Surface Mount RF Schottky Barrier Diodes Technical Data HSMS-280x Series Features • Surface Mount Packages • High Breakdown Voltage • Low FIT Failure in Time Rate* • Six-sigma Quality Level • Single, Dual and Quad Versions • Tape and Reel Options

74106

Abstract: SBB2632D SBB2632E SBB2632P sot86b sot-86b Mullard ttl
Contextual Info: D EV ELO PM E N T SAMPLE D A T A T h is in fo r m a tic m a d e ìjv a 11a l 11.1 im p ly t h a ï th .' s d e riv e d f r o m d e v e io p rn o n SBB2632P.D.E e v a lu a t i o n . L; d o es n o t in 'ic e w ill go m t ) re q u la r pr 32 768-BIT STATIC READ ONLY MEMORY

1026Y

Abstract: Signetics OR Mullard SBB2633D SBB2633E SBB2633P sot86b
Contextual Info: DEVELOPMENT SAMPLE DATA SBB2633P SBB2633D SBB2633E T h i s i n f o r m a t io n is d e r iv e d F ro m d e v e lo p m e n t s a m p le s m a d e a v a ila b le f o r e v a lu a t i o n . I t d o e s n o t n e c e s s a r i ly im p l y t h a t t h e d e v ic e w i l l g o in t o r e g u la r p r o d u c t i o n .

Diode Marking z3 SOT-23

Abstract: dual diode marking A3 code J4 diode W6 13A Diode marking J6 transistors diode marking x6 sot-23 MARKING CODE j3 marking W6 diode BAV-99 j4 DIODE schottky sot 23
Contextual Info: FERRANTI i semiconductors ZC830A Series S ilic o n Variable C ap a citan ce D iodes DESCRIPTION These silicon ion-im planted hyperabrupt tuning diodes are intended fo r use in HF, VH F and UHF electronic tuning and frequency control applications w here large capaci­

lc3518

Abstract: LC3518B lc3518bl LC3518B15 LC3518BSL IC351 lc3516 lc3518b-15 3518-B BS1215
Contextual Info: SANYO S E M I C O N D U C T O R CO RP S3E ]> • ? e5c57D7b G G I O I O S 311 » T S A J Ordering number. EN37SS| CMOS LSI í LC3518B. BM. BS, BL, BML, BSL SAßYO, 'w -Ä - ■r: - - i 2048-word x 8-bit CMOS Static RAM i OVERVIEW PACKAGE DIMENSIONS LC3518B series devices are silicon-gate CM OS, static

marking A5 sot363

Abstract: marking code C4 Sot 23-5 marking code diode ak
Contextual Info: Surface Mount RF Schottky Barrier Diodes Technical Data HSMS-280x Series Features • Surface Mount Packages • High Breakdown Voltage • Low FIT Failure in Time Rate* • Six-sigma Quality Level • Single, Dual and Quad Versions • Tape and Reel Options

marking code C4 Sot 23-5

Abstract: sot143 marking code A5 2805 diode bridge Marking Code ABC SOT 143 footprint SOT-363 a7 DIODES SC-70 MARKING C3 Analog devices code marking AB marking code tc sot 363 diode marking code C3 sot23
Contextual Info: Surface Mount RF Schottky Barrier Diodes Technical Data HSMS-280x Series Features • Surface Mount Packages • High Breakdown Voltage • Low FIT Failure in Time Rate* • Six-sigma Quality Level • Single, Dual and Quad Versions • Tape and Reel Options

marking a4 SOT-143

Abstract: SOT 143 footprint sc70-3 PCB PAD A5 sot-23 single DIODE 2805 diode bridge marking code C4 Sot 23-5 sot143 marking code A3
Contextual Info: Agilent HSMS-280x Surface Mount RF Schottky Barrier Diodes Data Sheet Features • Surface Mount Packages • High Breakdown Voltage • Low FIT Failure in Time Rate* Description/Applications Package Lead Code Identification, SOT-323 (Top View) These Schottky diodes are

SOT-363 a7

Abstract: marking A5 sot363 marking code C4 Sot 23-5 DIODES SC-70 MARKING C3 SOT 363 marking CODE a7 AVAGO DATE CODE MARKING AVAGO DATE CODE MARKING symbol
Contextual Info: HSMS-280x Surface Mount RF Schottky Barrier Diodes Data Sheet Description/Applications Features These Schottky diodes are specifically designed for both analog and digital applications. This series offers a wide range of specifications and package configurations to give the designer wide flexibility. The

Contextual Info: White Electronic Designs WV3HG64M32EEU-D4 ADVANCED* 256MB – 64Mx32 DDR2 SDRAM UNBUFFERED FEATURES DESCRIPTION 200-pin, Small-Outline DIMM SO-DIMM The WV3HG64M32EEU is a 64Mx32 Double Data Rate 2 SDRAM memory module based on 256Mb DDR2 SDRAM components. The module consists of four 64Mx8,

marvell 88SA8040

Abstract: PC87541 quanta foxconn quanta computer TPS2231 88sa8040 T43 88SA8040 AO3402 LDS-A50R
Contextual Info: 5 4 3 2 1 D D C C B B A A 5 4 3 2 1 5 4 3 2 1 EC LIST - B to C test : D EC1-EC2-EC3-EC4-EC5-EC6- Page Page Page Page Page Page 14 16 23 28 32 37 - Change LCD ID pull-high resistor R41 R23 R22 from 10K to 1K ohm for ATI suggestion - Remove LCD ID pull-high resistor R52 & pull-low resistor R390 R62

Contextual Info: White Electronic Designs WV3HG64M32EEU-D4 ADVANCED* 256MB – 64Mx32 DDR2 SDRAM UNBUFFERED FEATURES DESCRIPTION 200-pin, Small-Outline DIMM SO-DIMM The WV3HG64M32EEU is a 64Mx32 Double Data Rate 2 SDRAM memory module based on 512Mb DDR2 SDRAM components. The module consists of four 64Mx8,

Contextual Info: White Electronic Designs WV3HG64M64EEU-D4 ADVANCED* 512MB – 64Mx64 DDR2 SDRAM UNBUFFERED FEATURES DESCRIPTION 200-pin, Small-Outline DIMM SO-DIMM The WV3HG64M64EEU is a 64Mx64 Double Data Rate 2 SDRAM memory module based on 256Mb DDR2 SDRAM components. The module consists of eight 64Mx8, in

Contextual Info: White Electronic Designs WV3HG64M32EEU-D4 ADVANCED* 256MB – 64Mx32 DDR2 SDRAM UNBUFFERED FEATURES DESCRIPTION 200-pin, Small-Outline DIMM SO-DIMM The WV3HG64M32EEU is a 64Mx32 Double Data Rate 2 SDRAM memory module based on 512Mb DDR2 SDRAM components. The module consists of four 64Mx8,

PC2-3200

Abstract: PC2-5300 WV3HG64M32EEU-D4 U37Y
Contextual Info: White Electronic Designs WV3HG64M32EEU-D4 ADVANCED* 256MB – 64Mx32 DDR2 SDRAM UNBUFFERED FEATURES DESCRIPTION 200-pin, Small-Outline DIMM SO-DIMM The WV3HG64M32EEU is a 64Mx32 Double Data Rate 2 SDRAM memory module based on 512Mb DDR2 SDRAM components. The module consists of four 64Mx8,

Contextual Info: White Electronic Designs WV3HG64M64EEU-D4 ADVANCED* 512MB – 64Mx64 DDR2 SDRAM UNBUFFERED FEATURES DESCRIPTION 200-pin, Small-Outline DIMM SO-DIMM The WV3HG64M64EEU is a 64Mx64 Double Data Rate 2 SDRAM memory module based on 256Mb DDR2 SDRAM components. The module consists of eight 64Mx8, in

MBL8031

Abstract: INTEL MCS-80 MBL8051AH intel 8031 instruction set MBL8051 CER72F R77f MBL8031AH Fujitsu IR c code
Contextual Info: FU JITSU Advanced Products October 1986 • MBL8 0 5 1 AH, MBL8 0 3 1 AH Edi,ion3° NMOS Single-Chip 8-Bit Microcomputer Description The Fujitsu MBL8051AH/8031 AH are single-chip 8-bit micro­ computers developed as members of the MBL8051 Series. These microcomputers have powerful architecture and instruction set

Contextual Info: White Electronic Designs W3HG2128M64EEU-D4 2GB – 2x128Mx64 DDR2 SDRAM UNBUFFERED FEATURES DESCRIPTION „ Unbuffered 200-pin, dual in-line memory module SO-DIMM „ Fast data transfer rates: PC2-5300, PC2-4200 and PC2-3200 „ Based or Raw Card E design architecture

Contextual Info: White Electronic Designs W3HG232M64SEU-D4 ADVANCED* 512MB – 2x32Mx64 DDR2 SDRAM UNBUFFERED FEATURES DESCRIPTION „ Unbuffered 200-pin, Small-Outline DIMM SODIMM Raw card A „ Fast data transfer rates: PC2-6400*, PC2-5300, PC2-4200 and PC2-3200 „ Utilizes 800*, 667, 533 and 400 MT/s DDR2