AOT 110 Search Results

aot 110

Abstract: JESD22-A104-A JESD22-A106A 5050 SMD LED smd led 5050 5050RGB JESD22-A106-A SMD LED 5050 datasheet JESD22-B102-C smd led 5050RGB
Contextual Info: APPROVAL SHEET AOT MODEL NAME AOT PART NUMBER CUSTOMER NAME DATE Version MAKER Prepared Checked SMD LED AOT-5050RGB63B-Z0-K General 2007/Aug 1 Approved CUSTOMER AOT HEAD QUARTER No. 13, Gongye 5th. Road, Hsinchu Industrial Park, Hukou Shiang, Hsinchu Hsien 303, TAIWAN, R.O.C.

AOT-0603P-B01A

Abstract: AOT-0603P-B01AZ AOT0603P-B01-V 10E10 10E4 10E6 10E8 3050B aot-0603p diode 47-16
Contextual Info: APPROVAL SHEET AOT MODEL NAME AOT PART NUMBER CUSTOMER NAME DATE VERSION MAKER Prepared SMD LED : Blue Color AOT-0603P-B01AZ General Customer 2005/June 2 CUSTOMER Checked Approved AOT HEAD QUARTER No. 13, Gongye 5th. Road, Hsinchu Industrial Park, Hukou Shiang,

aot 110

Abstract: 10E6 gong
Contextual Info: APPROVAL SHEET AOT MODEL NAME AOT PART NUMBER CUSTOMER NAME DATE Version MAKER Prepared SMD LED :Yellow Color AOT-1206YL61A-N1-N-3 General Customer 2007/April 1 CUSTOMER Checked Approved AOT HEAD QUARTER No. 13, Gongye 5th. Road, Hsinchu Industrial Park, Hukou Shiang,

Q62702-S510

Contextual Info: SIPMOS Kleinsignaltransistoren SIPMOS®Small-Signal Transistors Bedrahtete Bauformen Leaded Types Typ Type ^DS max. V ^ 3S (thj V (max) mA Iff [» Ä D3 {on) max N-Kanal-Anreicherungstypen . Aot mW Bestellnummer Ordering Code Gehäuse Package 1! Bild Figure

STB-HL02

Abstract: RTI-820 aot 110 RTI 820 board rti 820 5B30 STB-AOT 5B32-02 STB-HL 5B38-05
Contextual Info: a Analog Signal Conditioning Panels 5B02, STB-TCI, STB-HLI, STB-TC, STB-HL02, STB-AOT FEATURES A Variety of Solutions for Analog Signal Interfacing Isolated and Nonisolated Signal Conditioning Interfacing Capabilities to a Wide Variety of Real-World Sensors Including:

AOT260L

Contextual Info: AOT260L/AOB260L 60V N-Channel MOSFET General Description Product Summary The AOT B 260L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of

aot 128

Contextual Info: AOT260L/AOB260L 60V N-Channel MOSFET General Description Product Summary The AOT B 260L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of

AOB260L

Contextual Info: AOT260L/AOB260L 60V N-Channel MOSFET General Description Product Summary The AOT B 260L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of

Contextual Info: AOT260L/AOB260L 60V N-Channel MOSFET General Description Product Summary The AOT B 260L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of

Contextual Info: AOT – 0603AM51A – N1 – N – 3 0603 Series Ϭ Absolute Maximum Rating Ta 25к Series Pd (mW) IF (mA) IFP (mA) VR (V) Top (к) Tst (к) 0603AM 75 30 100 5 -40 Д +85 -40 Д +85 ϡ ϡCondition for IFP is pulse of 1/10 duty and 0.1msec width. Ϭ Electro-optical Characteristics

0603RE51A

Abstract: 0603RE aot 110
Contextual Info: AOT – 0603RE51A – N1 – N – 3 0603 Series Ϭ Absolute Maximum Rating Ta 25к Series Pd (mW) IF (mA) IFP (mA) VR (V) Top (к) Tst (к) 0603RE 75 30 100 5 -40 Д +85 -40 Д +85 ϡ ϡCondition for IFP is pulse of 1/10 duty and 0.1msec width. Ϭ Electro-optical Characteristics

aot 110

Contextual Info: AOT – 1204AYG72A – N1 – N – 3 1204 Series Ϭ Absolute Maximum Rating Series Lighting color 1204AYG Amber Yellow green Ta 25к Pd (mW) IF (mA) IFP (mA) VR (V) Top (к) Tst (к) 66 30 100 5 -30Д+85 -40Д+100 ϡ ϡCondition for IFP is pulse of 1/10 duty and 0.1msec width.

Contextual Info: AOT – 1204AB72A – N1 – N – 3 1204 Series Ϭ Absolute Maximum Rating Ta 25к Series Lighting color Pd (mW) IF (mA) IFP (mA) VR (V) Top (к) Tst (к) 1204AB Amber 75 30 100 5 -30Д+85 -40Д+100 Blue 105 30 100 5 -30Д+85 -40Д+100 ϡ ϡCondition for IFP is pulse of 1/10 duty and 0.1msec width.

Contextual Info: SIEMENS 4-Quadranten-Silizium-PIN-Fotodiodenarray 4-Chip Silicon PIN Photodiode Array KOM 2084 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm

LM7007HM

Abstract: LM7007M LM7007MH TD15 M7007 ldr 520
Contextual Info: Ordering number: EN3888 NMOS LSI LM7007M, LM7007HM No. 38 8 8 SAÊÊYO Dual-PLL Frequency Synthesizers OVERVIEW PINOUT The LM7007M and LM7007HM are dual-PLL fre­ quency synthesizer ICs for use in 250 to 380 MHz cordless telephone transceivers. PIR The LM7007M and LM7007HM comprise two PLL

crt 1700

Abstract: LM7008HM LM7008M LM7008MH TD15 a888
Contextual Info: O rdering num ber: EN4403 _ NMOS LSI LM7008M. LM7008HM Dual-PLL Frequency Synthesizers OVERVIEW PIN ASSIGNMENT The LM 7008M and LM 7008HM are dual-PLL Irequency synthesizer ICs for use in 250 to 380 MHz cordless telephone transceivers.

IC 4483A

Contextual Info: Ordering number: EN4483 NMOS LSI LM7008M, LM7008HM Dual-PLL Frequency Synthesizers O VER VIEW The LM 7008M and LM 7008HM are dual-PLL fre­ quency synthesizer ICs for use in 250 to 380 MHz cordless telephone transceivers. The LM 7008M and LM 7008H M com prise two PLL

aot 128

Abstract: ldr 520 aot 110
Contextual Info: Ordering number: EN4483 NMOS LSI LM7008M, LM7008HM Dual-PLL Frequency Synthesizers O VER VIEW The LM 7008M and LM 7008HM are dual-PLL fre­ quency synthesizer ICs for use in 250 to 380 MHz cordless telephone transceivers. The LM 7008M and LM 7008H M com prise two PLL

TCXO 10 MHz ITT

Abstract: TCXO ITT LM7007HM LM7007M LM7007MH TD15 aot 128 LDR bias aot 110
Contextual Info: Ordering number: EN3888 NMOS LSI LM7007M, LM7007HM Dual-PLL Frequency Synthesizers OVERVIEW PINOUT The LM7007M and LM7007HM are dual-PLL fre­ quency synthesizer ICs for use in 250 to 380 MHz cordless telephone transceivers. The LM7007M and LM7007HM comprise two PLL

Contextual Info: Pii>ríin-: EN3365 NMOS LSI L M 7 0 0 7 M, L M 7007H M D u a l'P L L F re q u e n c y S y n th e s iz e rs OVERVIEW PINOUT The LM7007M and LM7C07HM we duai-PLL foqueacy synthesizer ICs or use in 250 I d 380 MHz cordless telephone ir& b ce ivra . T ie LM 7W 7M and 1-M7U07HM COlHfrtsc two PL1,

aot 110

Abstract: marking PDT1 marking PDTI 300MIL LM7006 LM7006H TD15 ill pir
Contextual Info: Ordering num ber:E N 3035A ÑMOS LSI LM7006, 7006H Dual PLL Frequency Synthesizer Circuit O v erv iew The LM7006, 7006Ii is a PLL Frequency Synthesizer circuit for use in cordless telephones. It incorpo­ rates separate program m able dividers, phase com parators and dual-gain charge pum ps for the tra n sm it

aot 128

Abstract: ldr 520 aot 110 LM7008MH LM70 LM7008HM LM7008M TD15 Pit Chip PIR detector application note
Contextual Info: Ordering num ber: EN4483 _ NM O S LSI _ S A Ü V O i O VER VIEW LM7008M, LM7008HM Dual-PLL Frequency Synthesizers PIN ASSIGNM ENT The LM 7008M and LM 7008H M are dual-PLL fre­ quency synthesizer ICs for use in 250 to 380 MHz

Contextual Info: Qrjf.fle nuT.bqr; EHÌ035A _ I S .W 8S A ?fMQÆL$l Ë M T O 8 S , 7 0 0 6 H r f / Dual IJLL Frequency Synthesizer Circuit ÛTflrvifiv T h e I^.V17 CilHG, 70[ifhEl Lr ;î P L L S ju lh c B iïG r c ir c u ii Fût llsç ln cu n lle u s te le p h a n e a , I t incürptft i t d f i t p f i m t p q | i U i i n i h l t d i v t t k r j , u h a ic c o m p a ra to rs u n d daal^j ^ f n c h u rg e p u m p a f a r ìéié: L rïinam it

Contextual Info: Q r r tftr in g -lu m b a r EM 4B 3 N M O S LSI LM7ÛQ8M, rtJTTÜ Ü Sem Dual-PLL Frequency Synthesizers PIN ASSIGNMENT O VER VIEW TDC LMTDOBM flu a iiy ftrai L M 7 0 0 H H M S y n lh f c s iz w ECk f o r use in an; tfu ftl-P IX 250 in 330 TrrM H ? t# c o it e s i telephone transceivers.