AOD44 Search Results

aod444

Contextual Info: AOD444 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD444 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard

Contextual Info: AOD444/AOI444 60V N-Channel MOSFET General Description Product Summary The AOD444/AOI444 combine advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . Those devices are suitable for use in PWM, load switching and general purpose applications.

Contextual Info: AOD442/AOI442 60V N-Channel MOSFET General Description Product Summary The AOD442/AOI442 used advanced trench technology to provide excellent RDS ON and low gate charge. Those devices are suitable for use as a load switch or in PWM applications. VDS 60V 37A

aod446

Abstract: AOD446L
Contextual Info: AOD446 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD446 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard

AOD442

Abstract: AOD442L
Contextual Info: Rev 2: Dec 2004 AOD442, AOD442L Green Product N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD442 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM

Contextual Info: AOD442 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD442 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. VDS (V) = 60V

Contextual Info: Aug 2004 AOD446, AOD446L Green Product N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD446 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load

aod444

Abstract: TO252-DPAK mosfet vgs 5v
Contextual Info: AOD444/AOI444 60V N-Channel MOSFET General Description Product Summary The AOD444/AOI444 combine advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . Those devices are suitable for use in PWM, load switching and general purpose applications.

AOD4454

Contextual Info: AOD4454 150V N-Channel MOSFET General Description Product Summary The AOD4454 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON .This device is ideal for boost converters and synchronous rectifiers for consumer,

AOD444

Abstract: AOD444L
Contextual Info: June 2004 AOD444, AOD444L Green Product N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD444 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load

aod446

Contextual Info: AOD446 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD446 uses advanced trench technology and design to provide excellent R DS ON with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.

AOD448

Abstract: AOD448L
Contextual Info: AOD448 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD448 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard

AOD442

Abstract: AOI44 TO252-DPAK
Contextual Info: AOD442/AOI442 60V N-Channel MOSFET General Description Product Summary The AOD442/AOI442 used advanced trench technology to provide excellent RDS ON and low gate charge. Those devices are suitable for use as a load switch or in PWM applications. VDS 60V 37A

Contextual Info: AOD442 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD442 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AOD442 is Pb-free

AOD444

Contextual Info: AOD444/AOI444 60V N-Channel MOSFET General Description Product Summary The AOD444/AOI444 combine advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . Those devices are suitable for use in PWM, load switching and general purpose applications.

AOD444

Abstract: AOi444 AOI44
Contextual Info: AOD444/AOI444 60V N-Channel MOSFET General Description Product Summary The AOD444/AOI444 combine advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . Those devices are suitable for use in PWM, load switching and general purpose applications.

Contextual Info: AOD442 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD442 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AOD442 is Pb-free

MA2810

Abstract: AOD448
Contextual Info: AOD448 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD448 uses advanced trench technology and design to provide excellent R DS ON with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.

AOD444

Abstract: AOD444L
Contextual Info: AOD444 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD444 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.

AON6704L

Abstract: AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025
Contextual Info: Selector Guide Q4 2009 United states CALIFORNIA 495 Mercury Drive Sunnyvale, CA 94085 Phone: +1 408 830-9742 Fax: +1 (408) 830-9749 TEXAS 4845 Briar Creek Dr. Flower Mound, TX 75028 Phone: +1 (972) 691-1085 Fax: +1 (972) 691-1086 CHINA Rm F, 24/F Shenzhen Special Zone Press Tower

AMD am3 socket pinout

Abstract: tv schematic diagram sony j14 amd socket am3 pinout schematic diagram lcd tv SONY T CON quanta 7233a PC97551 915GM schematic diagram tv sony Socket AM2
Contextual Info: 1 A 笔记本图纸QQ107203753 ED3-UMA DESIGN 2 RUN POWER SW 3 4 5 7 8 VER : B3B A AC/BATT CONNECTOR PG 37 BATT CHARGER PG 37 Dothan DC/DC +3V_SRC +5VSUS 478 Micro-FCPGA PG 34 6 PG 34 CPU VR CLOCKS PG 33 PG 17 PG 5, 6 FSB 133MHZ LVDS DDRII-SODIMM1 PG 15, 16

SONY KNC 201 15

Abstract: knc 201 39 KNC 201 KNC 201 08 xo 405 mf tc144e KNC 201 35 conexant cx20493 reference design KNC 201 6 ga g31
Contextual Info: 1 2 3 4 5 6 7 8 ED3-UMA DESIGN A RUN POWER SW AC/BATT CONNECTOR A Dothan PG 37 DC/DC +3V_SRC +5VSUS 478 Micro-FCPGA PG 34 BATT CHARGER VER : F3B PG 37 CPU VR PG 34 CLOCKS PG 17 PG 33 PG 5, 6 FSB 133MHZ LVDS DDRII-SODIMM1 PG 15, 16 Panel Connector PG 18 Alviso 915GM/GML

AO4478L

Abstract: AOD4478L AO4478 aod44
Contextual Info: AO4478L N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4478L uses advanced trench technology to provide excellent RDS ON , low gate charge. This device is suitable for use as general puspose, PWM and a load switch applications.

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A