AO4813L Search Results

HTGB

Abstract: JEDEC htrb
Contextual Info: AOS Semiconductor Product Reliability Report AO4813/AO4813L, rev B Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 www.aosmd.com Nov 7, 2005 1 This AOS product reliability report summarizes the qualification result for AO4813. Accelerated

SiI3811

Abstract: AE1421 Mitsubishi DA U31 sc2625 NTC SD-15 DELL DA-2 power supply diagram SSLVC08APWR-GP Wistron Corporation ST470U2D5VDM ICS954226AGLF
Contextual Info: Barbados Block Diagram Intel Mobile CPU Clock Generator ICS954226 /CV140PAG 3 Dothan: 1.6BGHz/1.73GHz 1.87GHz/2AGHz/2.1GHz Celeron:1.4GHz/1.5GHz/1.6GHz 4,5 Project code:91.4C401.001 PCB P/N :04242 REVISION :SD System DC/DC 400 /533MHz 4.3GB/s HOST BUS 200-PIN DDR2 SODIMM

Contextual Info: AO4813 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4813 uses advanced trench technology to provide excellent RDS ON , and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard product AO4813 is Pb-free

SiI3811

Abstract: TPS2231 G313 D14-230 marvell 88SA8040 Wistron Corporation R5C832 SSC95 6N-30 ICS954226AGLF
Contextual Info: Intel Mobile CPU Barbados Block Diagram Dothan: 1.6BGHz/1.73GHz 1.87GHz/2AGHz/2.1GHz Celeron:1.4GHz/1.5GHz/1.6GHz Clock Generator ICS954226/CV140PAG 3 4,5 Project code:91.4C401.001 PCB P/N :04242 REVISION :SD System DC/DC 400/533MHz 4.3GB/s HOST BUS 200-PIN DDR2 SODIMM

MX25L6445

Abstract: Smsc kbc1098 92hd75b3x5 kbc1098 TPS51611 tps51621 "kbc1098" KBC1098-NU MX25L644 G9091-330TA1U
Contextual Info: 5 4 3 2 1 D C D Wistron Confidential SI2 2009/09/10 C REV :SI2-01 B A B A <Core Design> Wistron Incorporated 21F, 88, Hsin Tai Wu Rd Hsichih, Taipei Title NORN 3.0 NORN 3.0 Size A3 Document Number Date: Thursday, September 10, 2009 Sheet Rev SE 1 of 57 5 4

AO4813

Abstract: AO4813L diode 71A
Contextual Info: AO4813 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4813 uses advanced trench technology to provide excellent RDS ON , and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard product AO4813 is Pb-free

AO4813L

Abstract: AO4813
Contextual Info: AO4813 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4813/L uses advanced trench technology to provide excellent RDS ON , and low gate charge. This device is suitable for use as a load switch or in PWM applications.