AO37 Search Results

Contextual Info: AO3702 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO3702/L uses advanced trench technology to provide excellent RDS ON , low gate charge. A Schottky diode is provided to facilitate the implementation of

AO3700

Contextual Info: AO3700 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features VDS V = 30V ID = 3.3A (V GS = 10V) RDS(ON) < 65mΩ (VGS = 10V) RDS(ON) < 75mΩ (VGS = 4.5V) RDS(ON) < 160mΩ (VGS = 2.5V) SCHOTTKY VDS (V) = 20V, I F = 1A, VF<0.5V@0.5A

ao37

Contextual Info: AO3702 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO3702/L uses advanced trench technology to provide excellent RDS ON , low gate charge. A Schottky diode is provided to facilitate the implementation of

AO3700

Contextual Info: AO3700 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features VDS V = 30V ID = 3.3A (V GS = 10V) RDS(ON) < 65mΩ (VGS = 10V) RDS(ON) < 75mΩ (VGS = 4.5V) RDS(ON) < 160mΩ (VGS = 2.5V) SCHOTTKY VDS (V) = 20V, I F = 1A, VF<0.5V@0.5A

sony TA-70

Abstract: 27a diode AO3703 AO3703L DSA002702
Contextual Info: AO3703 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features VDS V = -20V ID = -2.7 A (VGS = -10V) RDS(ON) < 97mΩ (VGS = -4.5V) RDS(ON) < 130mΩ (VGS = -2.5V) RDS(ON) < 190mΩ (VGS = -1.8V) The AO3703 uses advanced trench technology to provide

Schottky Diode 50V 3A

Abstract: AO3701L AO3701
Contextual Info: AO3701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features VDS V = -20V ID = -3A (VGS = -10V) RDS(ON) < 80mΩ (VGS = -10V) RDS(ON) < 100mΩ (VGS = -4.5V) RDS(ON) < 145mΩ (VGS = -2.5V) ESD Rating: 2000V HBM

AO3435

Abstract: ao37 AO3705
Contextual Info: AO3705 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO3705/L uses advanced trench technology to provide excellent R DS ON , low gate charge. A Schottky diode is provided to facilitate the implementation of a

AON6704L

Abstract: AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025
Contextual Info: Selector Guide Q4 2009 United states CALIFORNIA 495 Mercury Drive Sunnyvale, CA 94085 Phone: +1 408 830-9742 Fax: +1 (408) 830-9749 TEXAS 4845 Briar Creek Dr. Flower Mound, TX 75028 Phone: +1 (972) 691-1085 Fax: +1 (972) 691-1086 CHINA Rm F, 24/F Shenzhen Special Zone Press Tower

AO4946

Abstract: AOZ1242 AO4407A AOZ1242AI AO7408 AO3460 AO4936 AOZ1212AI AOD484 ao4466
Contextual Info: ALPHA & OMEGA SEMICONDUCTOR Selector Guide Q2/Q3 2008 www.aosmd.com Technology. Innovation. Powering the Future. TABLE OF CONTENTS Corporate Overview Mosfets Power ICs Transient Voltage Suppressors TVS Package Types www.aosmd.com PAGE 2 PAGE 3 - 18 PAGE 19 - 22

MN3211

Abstract: "hybrid systems" AD371JN DAC350 A037-1 MN3200 AD370KN MN360 MN362
Contextual Info: If' .~ W Complete, LowPower 12-BitD/A Converter ANAL'OG DEVICES AD370/AD371! [ FEATURES Bipolar Voltage Output: A0370 Unipolar Voltage Output: A0371 Low Power: 150mW max Linearity: f:1/2LSB, -55°C to +125°C S Version TTL/CMOS Compatible Compatible with Standard 18-Pin OAC Configurations