ANPEC ELECTRONICS Search Results

ANPEC

Abstract: china mobile lcd 5-146281-4 vga card CY04 MOSFET NOTEBOOK Analog IC Design PMIC HDD china ic A507
Contextual Info: www.anpec.com.tw 茂達電子 - ANPEC Anpec Always Around Prepared By Tim Shiue TEL : 886-3-564-2000 Ext 250 Date : Aug. 12th, 2005 1 大綱 www.anpec.com.tw • • • • • 公司簡述 產品概況 產品應用 產品策略 業務窗口 2 About Anpec

APA2308

Abstract: ANPEC 27BSC MS-001
Contextual Info: anpec APA2308 Class AB Stereo Headphone Driver Features ! ! ! ! ! ! ! ! ! ! ! Applications Operating Voltage Single Supply 3V to 7V Dual Supply ±1.5V to ± 3.5V High Signal-to-Noise Ratio 100dB High Slew Rate 5V/ µs Low Distortion -65dB Large Output Voltage Swing

APL5883

Abstract: SOT89 voltage regulator marking code 93
Contextual Info: anpec APL5883 300mA Low Dropout Linear Regulator of Fixed 2.85V,3.3V and 3.5V Features ! ! ! ! ! ! ! ! General Description Low Dropout Voltage of 1.2V at 300mA Output Voltage Accuracy ± 2.0% Line Regulation - 1mV typ. Load Regulation - 6mV (typ.) Input Voltage Range up to 9V

APA2059

Abstract: stereo 2W "amplifier class ab" apa2068 audio amplifier SOP monitor lcd power supply lcd monitor apa2020
Contextual Info: Anpec Electronics Corporation 茂達電子股份有限公司 進階搜尋 首頁 產品資訊 關於茂達 產品資訊 解決方案 新聞&活動 網站地圖 投資關係 English 人力資源

JESD22JESD22

Contextual Info: APM6010K N-Channel Enhancement Mode MOSFET Features • Pin Configuration D D 60V/5A, D D RDS ON =65mΩ (max.) @ VGS=10V RDS(ON)=90mΩ (max.) @ VGS=4.5V • • • S S Super High Dense Cell Design S G Reliable and Rugged Top View of SOP-8 Lead Free and Green Devices Available

apm1110

Abstract: code diode transient APM1110K
Contextual Info: APM1110K N-Channel Enhancement Mode MOSFET Features • Pin Configuration D D 100V/2.7A, D D RDS ON =140mΩ (typ.) @ VGS=10V RDS(ON)=185mΩ (typ.) @ VGS=4.5V • • • S S ESD Protected S G Reliable and Rugged Top View of SOP-8 Lead Free and Green Devices Available

APM4008N

Abstract: APM4008 APM4008NU ANPEC A102 A104 A108 B102 JESD-22 APM40
Contextual Info: APM4008NU N-Channel Enhancement Mode MOSFET Features • Pin Description 40V/60A, RDS ON =6.5mΩ (typ.) @ VGS=10V G RDS(ON)=10.5mΩ (typ.) @ VGS=4.5V • • • D Super High Dense Cell Design S Reliable and Rugged Top View of TO-252-3 Lead Free and Green Devices Available (RoHS

APM6006NFP

Abstract: APM6006 21M025 APM60
Contextual Info: APM6006NFP N-Channel Enhancement Mode MOSFET Features • Pin Description SD 60V/34A, G RDS ON =21mΩ (typ.) @ VGS=10V RDS(ON)=29mΩ (typ.) @ VGS=4.5V • • Reliable and Rugged Top View of TO-220-FP Lead Free and Green Devices Available D (RoHS Compliant)

APM60

Contextual Info: APM6005NF N-Channel Enhancement Mode MOSFET Features • Pin Description SD 60V/80A, G RDS ON =4.5mΩ (typ.) @ VGS=10V • • • Avalanche Rated Reliable and Rugged Top View of TO-220 Lead Free and Green Devices Available (RoHS Compliant) D Applications

APM3109

Abstract: APM3109NU MOSFET N 30V 30A 252 A102 A104 A108 B102 JESD-22 J-STD-020D
Contextual Info: APM3109NU N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/50A, D RDS ON =7.5mΩ (typ.) @ VGS=10V G RDS(ON)=12mΩ (typ.) @ VGS=4.5V • • • • S Super High Dense Cell Design Top View of TO-252-3 Reliable and Rugged D Avalanche Rated

APM9926C

Abstract: M9926 GEM2928 A108 B102 JESD-22 APM9926CCG APM9926CC
Contextual Info: APM9926CCG Dual N-Channel Enhancement Mode MOSFET Features • Pin Description D2 D2 D1 D1 20V/5A , RDS ON =25mΩ(typ.) @ VGS=4.5V RDS(ON)=34mΩ(typ.) @ VGS=2.5V • • • G2 S2 G1 S1 Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available

APM2605

Abstract: APM2605C JESD-22 J-STD-020D MARKING A104 SOT AAAX
Contextual Info: APM2605C P-Channel Enhancement Mode MOSFET Features • Pin Description -30V/-4.5A, D D S RDS ON =43mΩ(typ.) @ VGS=10V RDS(ON)=60mΩ(typ.) @ VGS=4.5V • • • Super High Dense Cell Design D D G Top View of SOT-23-6 Reliable and Rugged Lead Free and Green Devices Available

APM9935

Abstract: APM9935K B102 JESD-22
Contextual Info: APM9935K Dual P-Channel Enhancement Mode MOSFET Features • Pin Description D1 D1 D2 D2 -20V/-6A, RDS ON =30mΩ(typ.) @ VGS=-4.5V RDS(ON)=38mΩ(typ.) @ VGS=-2.5V • • • S1 G1 S2 G2 Super High Dense Cell Design Reliable and Rugged Top View of SOP − 8

APM1104P

Abstract: 20A, 50V, P-Channel APM1104PG apm11
Contextual Info: APM1104PG P-Channel Enhancement Mode MOSFET Features • Pin Description -100V/-90A, RDS ON =15mΩ (Typ.) @ VGS=-10V RDS(ON)=18mΩ (Typ.) @ VGS=-4.5V • • D G S Reliable and Rugged Top View of TO-263-3 Lead Free and Green Devices Available (RoHS Compliant)

apm30

Contextual Info: APM3015NFP N-Channel Enhancement Mode MOSFET Features • Pin Description SD 30V/50A, G RDS ON =12mΩ (typ.) @ VGS=10V RDS(ON)=17mΩ (typ.) @ VGS=4.5V • • • Super High Dense Cell Design Top View of TO-220 -FP Reliable and Rugged Lead Free and Green Devices Available

"Microphone Preamplifier" 1.5V transistor

Abstract: "Microphone Preamplifier" 1.5V A102 APA4800
Contextual Info: APA4800 Stereo 290mW 8Ω Speaker Driver Features Gereral Description • The APA4800 is an integrated class AB stereo headphone amplifier contained in an SOP-8 or a DIP-8 plastic package. Operating Voltage -Single Supply from 3V to 7V The APA4800 is capable of delivering 290mW of maximum output power to an 8Ω load with less than 10%

Contextual Info: APL3213/A Li+ Charger Protection IC Features General Description • Input Over-Voltage Protection The APL3213/A provide Li+ charger protection against • • Over-Temperature Protection High Immunity of False Triggering over-voltage. The IC is designed to monitor input voltage.

APM4820

Abstract: APM4820K APM48 10 35 SOP DIODE c245
Contextual Info: APM4820K N-Channel Enhancement Mode MOSFET Pin Description Features • D D 30V/11A, D D RDS ON =12mΩ(Typ.) @ VGS = 10V RDS(ON) =18mΩ(Typ.) @ VGS = 4.5V S S • Super High Dense Cell Design • Reliable and Rugged • Lead Free and Green Devices Available

APM3006N

Abstract: APM3006 APM3006NU TO-252 AA footprint A102 id40ac 48m TO-252
Contextual Info: APM3006NU N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/50A, RDS ON =4.8mΩ (typ.) @ VGS=10V G RDS(ON)=7mΩ (typ.) @ VGS=4.5V • • • D Super High Dense Cell Design S Top View of TO-252 Reliable and Rugged Lead Free and Green Devices Available

apm2556n

Abstract: APM2556NU apm2556 apm*2556n apm2556n mosfet apm255 ap*2556 ANPEC A102 diode A102
Contextual Info: APM2556NU N-Channel Enhancement Mode MOSFET Features • Pin Description 25V/60A, RDS ON =4.5mΩ (typ.) @ VGS=10V RDS(ON)=7.5mΩ (typ.) @ VGS=4.5V • • • G Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Lead Free and Green Devices Available

A102

Abstract: APM4350KP code diode transient
Contextual Info: APM4350KP N-Channel Enhancement Mode MOSFET Pin Description Features • 30V/60A, RDS ON =7.5mΩ (typ.) @ VGS = 10V RDS(ON) =11.5mΩ (typ.) @ VGS = 4.5V • • • • D D D D Super High Dense Cell Design G S Avalanche Rated S S Reliable and Rugged Lead Free and Green Devices Available

APM4354

Abstract: APM4354KP marking code KP A102
Contextual Info: APM4354KP N-Channel Enhancement Mode MOSFET Pin Description Features • 30V/70A, D RDS ON =4.5mΩ (typ.) @ VGS = 10V D D D G RDS(ON) =6mΩ (typ.) @ VGS = 4.5V • • • • S S Super High Dense Cell Design S Avalanche Rated Top View of KPAK Reliable and Rugged

Contextual Info: APM2301CA P-Channel Enhancement Mode MOSFET Features • Pin Description -20V/-3A D RDS ON = 56mΩ (typ.) @ VGS= -4.5V RDS(ON)= 85mΩ (typ.) @ VGS= -2.5V RDS(ON)= 135mΩ (typ.) @ VGS= -1.8V • • • G Super High Dense Cell Design S Reliable and Rugged

A102

Abstract: APM3040ND ISD05
Contextual Info: APM3040ND N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/3A, RDS ON =31mΩ(typ.) @ VGS=10V G RDS(ON)=35mΩ(typ.) @ VGS=4.5V D RDS(ON)=55mΩ(typ.) @ VGS=2.5V • • • S Top View of SOT-89 Super High Dense Cell Design Reliable and Rugged