ANP TRANSISTOR Search Results

STK and STR integrated circuits

Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Contextual Info: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram

Motorola transistor smd marking codes

Abstract: SMD TRANSISTOR MARKING 5c SMD code smd TRANSISTOR code marking 2F toshiba smd marking code transistor TRANSISTOR SMD MARKING CODE 1P smd transistor 5c Diode SOT-23 marking 15d SMD TRANSISTOR MARKING 6B TRANSISTOR SMD MARKING CODE 1d
Contextual Info: Eugene Turuta 2 - pins SOT - 89 databook 3 - pins Acti ve Activ SMD components mar king codes marking Introduction SMD-codes for semiconductor components in 3-pins cases SMD-codes for semiconductor components in SOT-89 cases SMD-codes for semiconductor components in BGA and LPP cases

capacitor 470nf 50v

Abstract: diode ss24 MLX10803B yageo RC 0805 MLX10803 1n4148-phi WE-PD XL bsp318 circuit for monoflop D12CRCW
Contextual Info: Application Note MLX10803 Boost/Buck EVA board Power LED driver for automotive applications 1. Scope This document describes the design and use of the MLX10803 Boost/Buck Evaluation Board. For a general description about the functionality of the MLX10803 please refer to the MLX10803 data sheet.

Contextual Info: Transistors SMD Type Product specification 2SC4061K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 Low collector output capacitance. 1 0.55 High breakdown voltage. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1

2SC4061K

Contextual Info: Transistors SMD Type Chroma amplifier transistor 2SC4061K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 Low collector output capacitance. 1 0.55 High breakdown voltage. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1

WT546

Abstract: AN2456 TCP500 TH1 "cross reference" STLC3055N LCP1521S LCP152DEE STLC3055 st power line application note
Contextual Info: AN2456 Application note Protection of single battery voltage SLICs for new networks in US market Introduction Despite the widespread proliferation of digital technologies, analog networks remain the most commonly used telecommunication means in the world. Thanks to its simple and

fototransistor

Abstract: Fototransistor, fototransistor if
Contextual Info: MENTOR Infrared-LED Jp = 150 mA Sperrspannung Reverse Voltage < Forward Current h Durchlaßstrom Ul Absolute maximum ratings XI Absolute Grenzdaten c Infrarot-LED Verlustleistung Power Dissipation Pv = 210 mW Wellenlänge der max. Emission bei If 100 mA Peak Wavelength emission Ip 100 mA

TRANSISTOR J 5804

Abstract: TRANSISTOR J 5804 EQUIVALENT STR58041 j 5804 transistor power Ic str58041 j 5804 TOSHIBA TV SMPS TRANSISTOR 5804 YG6260 str-58041
Contextual Info: S P E C I F I C A T I O N S Sanken Hybrid Voltage Regulator Module, STR58041 Messrs : Date : June 22, 1987 Specification No.: S$£16U2U 1. F e a t u r e s : a Hybrid voltage regulator module diffused planar transistor incorporated triple b) For SMPS of TV power supply

C4858

Abstract: C4406 C-4401 C3771 C4864 C4402 C4863 c4407 2SC377 C4401
Contextual Info: SAfiYO VERY HIGH-FREQUENCY TRANSISTORS FOR CATV TV TUNER,VTR USE. 1 . C A T V U s O o n v ö ir-t srM C P C4404 C3774 C3778 C3771,C4270, C4856* C3776 C3776 Local OSC , 0 C4401, C4402, C4406 C4407 C3771,C4269, C4270 C43'64, C4365 1st IF Amp C4856*. C4863*

Contextual Info: 2SD1812 / T ransistors O C Q 1 Q 4 O NPN '>>;=!> 4 l ^JiH lliffl/M e d iu m Power Amp. Epitaxial Planar NPN Silicon Transistor • ^fJK rt'jiEl/D im ensions U n it: mm • 1) MME.T'$>Z (BVceo= 160V ) o 2) A S O iffc l'o 3) fi-A'lS < , CobA'IS^'o on 4) 2SB1212t 3 > 7 ‘ V T & Z 0

transistor tt 2222

Abstract: TT 2222 os TT 2222 LM 2222 transistor tt 2222 vertical BLf221 2222-581 BH RV transistor BLF221B OP03
Contextual Info: Preliminary »pacification Philips Semiconductors HF/VHF power MOS transistor PHILIPS INTERNATIONAL FEATURES BLF221B SbE D • 7110fl5b 0DM37Mel 37M HIPHIN PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability

QFN40

Abstract: R2J20656ANP
Contextual Info: Preliminary Datasheet R2J20656ANP R07DS0201EJ0100 Rev.1.00 Jan 25, 2011 Integrated Driver - MOS FET DrMOS Description The R2J20656ANP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this

Contextual Info: Preliminary Datasheet R2J20656ANP R07DS0201EJ0100 Rev.1.00 Jan 25, 2011 Integrated Driver - MOS FET DrMOS Description The R2J20656ANP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this

mj10000

Abstract: MJ10001
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10000 Designer's Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistor 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS The M J10000 Darlington transistor is designed for high-voltage, high-speed,

AXP 209

Abstract: btp 128 550 AXP 192
Contextual Info: New Product TPSMP6.8 thru TPSMP43A Vishay General Semiconductor High Power Density Surface Mount Automotive Transient Voltage Suppressors FEATURES • Very low profile - typical height of 1.0 mm eSMP TM Series • Ideal for automated placement • Uni-direction only

AXP 209

Contextual Info: TPSMP6.8 thru TPSMP43A Vishay General Semiconductor New Product High Power Density Surface Mount Automotive Transient Voltage Suppressors FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement • Unidirection only • Exclusive patented PAR oxide passivated chip

btp 128 550

Abstract: AXP 188
Contextual Info: TPSMP6.8 thru TPSMP43A Vishay General Semiconductor New Product High Power Density Surface Mount Automotive Transient Voltage Suppressors FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement • Unidirection only • Exclusive patented PAR oxide passivated chip

AXP 209

Abstract: TPSMP30A DO-220AA AXP 188 TPSMP18a JESD22-B102D J-STD-002B axp 189
Contextual Info: New Product TPSMP6.8 thru TPSMP43A Vishay General Semiconductor High Power Density Surface Mount Automotive Transient Voltage Suppressors FEATURES • Very low profile - typical height of 1.0 mm eSMPTM Series • Ideal for automated placement • Unidirection only

Contextual Info: New Product TPSMP6.8 thru TPSMP43A Vishay General Semiconductor High Power Density Surface Mount Automotive Transient Voltage Suppressors FEATURES • Very low profile - typical height of 1.0 mm eSMP TM Series • Ideal for automated placement • Uni-direction only

Contextual Info: TPSMP6.8 thru TPSMP43A Vishay General Semiconductor New Product High Power Density Surface Mount Automotive Transient Voltage Suppressors FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement • Unidirection only • Exclusive patented PAR oxide passivated chip

transistor f151

Abstract: transistor b136
Contextual Info: 6DI15MS-05005A • O utline D ra w in g s POW ER TR A N S IS TO R M O D U LE : Features • h F E * '' S t ' H igh D C C urrent Gain • KA^jSv,' • 7' J — High speed sw itching J"— K 1^9HSc • Inclu ding F r e e w h e e lin g D iode Insulated Type

btp 128 550

Abstract: AXP 209 TPSMP6.8A
Contextual Info: TPSMP6.8 thru TPSMP43A Vishay General Semiconductor New Product High Power Density Surface Mount Automotive Transient Voltage Suppressors DO-220AA SMP MAJOR RATINGS AND CHARACTERISTICS V(BR) 6.8 V to 43 V PPPM (for V(BR) 6.8 V) 250 W PPPM (for V(BR) 7.5 V - 12 V)

AXP 188

Abstract: AXP 209 AXP 189 btp 128 550 TPSMP24A TPSMP33A btp 129 btp 128 BSP 324 tpsmp9.1a
Contextual Info: New Product TPSMP6.8 thru TPSMP43A Vishay General Semiconductor High Power Density Surface Mount Automotive Transient Voltage Suppressors FEATURES • Very low profile - typical height of 1.0 mm eSMP TM Series • Ideal for automated placement • Uni-direction only

TPSMP27

Abstract: TPSMP10
Contextual Info: New Product TPSMP6.8 thru TPSMP43A Vishay General Semiconductor High Power Density Surface Mount PAR Transient Voltage Suppressors FEATURES eSMP TM • Junction passivation optimized design passivated anisotropic rectifier technology Series • TJ = 185 °C capability suitable for high reliability