ANDERS Search Results

SBS-50

Abstract: SBS50BLU
Contextual Info: SBS 50 Anderson Power Products Connector ® The Patented SBS0 is designed for high voltage applications where personal safety is critical. The connector meets the accessibility requirements of UL1977 section 10.2 and is recommended for over 50 volts. FEATURES

TMS320

Abstract: TMS320C17 TMS370
Contextual Info: TMS320C17 and TMS370C010 Serial Interface APPLICATION REPORT: SPRA391 Wallace Anderson Computer Science Center Dallas, TX Peter Robinson Regional Technology Center Waltham, Massachusette Tim Settle Automotive Applications Carmel, Indiana Texas Instruments

GE006367

Contextual Info: SIEMENS GaAs-IR-Lumineszenzdioden-Zeilen GaAs Infrared Emitter Arrays LD 260 LD 262 . LD 269 Chip 2.54 mm spacing GE006367 Cathode LD 263 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features

Contextual Info: SIEMENS GaAIAs-Lumineszenzdiode 660 nm GaAIAs Light Emitting Diode (660 nm) SFH 464 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Features Wesentliche Merkmale • Strahlung im sichtbaren Rotbereich ohne IRAnteil

ls 487

Contextual Info: SIEMENS GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 409 Area not flat 4.0 3.6 0iffei 5 2 9 - ^ 6.3 27 5.9 ^ C a th o d e S F H 409 Anode (SFH 487) — (3.5) Chip position . _0.6 ,.v^ V 0.4 GEX06250 Approx. weight 0.3 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

Contextual Info: SIEMENS Neu: NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor SFH 313 SFH 313 FA Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. W esentliche Merkmale Features • • • • Speziell geeignet für Anwendungen im

Contextual Info: SIEMENS Schnelle GaAIAs-IR-Lumineszenzdiode High-Speed GaAIAs Infrared Emitter SFH 4391 Vorläufige Daten / Preliminary Data Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale • Hohe Pulsleistung sowie hoher Gesamtstrah­

LD271 IR LED

Abstract: LD271 APPLICATIONS IR LD271 siemens LD
Contextual Info: SIEMENS GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 271, LD 271 H LD 271 L, LD 271 HL Area not flat 5.9 5.5 0.6 0.4 GEX06239 Approx. weight 0.5 g Cathode 5.9 5.5 OO T— ¡a 0.6 0.4 Area not flat GE006645 Chip position Approx. weight 0.2 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

photointerrupter

Abstract: aot 430
Contextual Info: SIEMENS NPN-Silizium-Fototransistor Silicon NPN Phototransistor LPT 80 A 2.54 '2.03 r- cNj LO CO 1.70 1.45 GE006391 Approx. weight 0.2 g Maße in mm, wenn nicht anders angegeben/D im ensions in mm, unless otherw ise specified W esentliche Merkmale Features

5mmled

Contextual Info: SIEMENS Schnelle GaAIAs-IR-Lumineszenzdiode High-Speed GaAIAs Infrared Emitter SFH 4591 SFH 4592 M aße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale • Hohe Pulsleistung sowie hoher Gesamtstrahlungsfluß Oe

Contextual Info: SIEMENS Silizium-PIN-Fotodiode mit erhöhter Blauempfindlichkeit Silicon PIN Photodiode with Enhanced Blue Sensitivity BPW 34 B Cathode marking spacing ' Photosensitive area 2.65 mm X 2.65 mm Approx. weight 0.1 g GE006643 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified

Contextual Info: SIEMENS Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Silicon PIN Photodiode with Daylight-Cutoff Filter Reverse Gullwing Photosensitive area 2.65 mm x 2.65 mm BPW 34 FS (E9087) en Cathode lead CD O GEO06916 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

Contextual Info: SIEMENS Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Silicon-PIN-Photodiode with Daylight Filter Area n ot flat SFH 204 F SFH 204 FA Chip position 5.1 4.7 is W GE006964 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

Q62702-P5072

Contextual Info: SIEMENS GaAs-IR-Lumineszenzdiode Mini Sidelooker GaAs-lnfrared Emitter (Mini Sidelooker) SFH 4110 Vorläufige Daten / Preliminary Data Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features •

Contextual Info: S IE M E N S Silizium-Fotodiode mit sehr kleinem Dunkelstrom Silicon Photodiode with Very Low Dark Current SFH 212 Maße in mm, w enn nicht anders angegeben/D im ensions in mm, unless otherwise specified. Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im

Contextual Info: SIEMENS Silizium-PIN-Fotodiode mit Tagelichtsperrfilter Silicon PIN Photodiode with Daylight Filter SFH 235 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features • Speziell geeignet für Anwendungen bei

Contextual Info: SIEMENS GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 405 1.1 5 , 0 .9 0 0 .5 0 .4 2 .5 4 m m s p a c in g \C a th o d e 1 D e t a c h in g f la s h area n o t tr u e GE006317 f o r to o ls , to s iz e . A p p r o x . w e ig h t 0 .0 2 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

Contextual Info: SIEM ENS Silizium-PIN-Fotodiode mit sehr kurzer Schaitzeit Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Silicon PIN Photodiode with Very Short Switching Time Silicon PIN Photodiode with Daylight Filter SFH 217 SFH 217 F Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

Contextual Info: SIEMENS 6fach-Silizium-Fotodiodenarray 6-Chip Silicon Photodiode Array KOM 2033 A KOM 2033 AF Maße in mm, w enn nicht anders a ngegeben/D im ensions in mm. unless otherw ise specified W esentliche M erkm ale Features • Speziell geeignet für Anwendungen im

DS-E32EBCM

Abstract: E16-89 EN1175-1 pbtp EN1175
Contextual Info: EBC Connectors E32 Male DIN 43589-1 Anderson Power Products’ family of Euro Battery Connectors EBC exceeds all the requirements of DIN 43589-1 and EN 1175-1. The connector design incorporates an innovative, cost effective contact carrier for ease of assembly.

1120nm

Abstract: Silicon Group Q62607-S61
Contextual Info: TP 61 P TP 61 P fso06637 Silizium-Fotoelement Silicon Photovoltaic Cell Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale ● Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1120 nm ● Kathode = Chipunterseite

1388G4

Abstract: 6800G3 6802G2 6800G1 6800G2 6801G1 6801G2 6801G3 6802G1 6802G3
Contextual Info: SB 120 Anderson Power Products Connector ® The innovative SB® connectors provide cost-effective reliability, design flexibility and safety for your products' manufacture, installation and maintenance. FEATURES APP's 2 pole connector is available with a

6323g2

Abstract: 6320G5 SB350 anderson 6322G1 6320G1 6320G2 6320G4 6321G1 6321G2 6321G4
Contextual Info: SB 350 Anderson Power Products Connector ® The innovative SB® connectors provide costeffective reliability, design flexibility and safety for your products' manufacture, installation and maintenance. APP's 2 pole connector is available with a 350 amp rating, 600 Volts continuous AC or

6331G3

Abstract: 6319G1 6331G7 6331G1 6331G2 6331G4 6331G5 6331G6 6331G8 6331G9
Contextual Info: SB 50 Anderson Power Products Connector ® The innovative SB® connectors provide costeffective reliability, design flexibility and safety for your products' manufacture, installation and maintenance. APP's 2 pole connector is available with a 50 amp rating, 600 Volts continuous AC or DC