AMPLIFIER RF CLASS B Search Results

Contextual Info: GaAs HJ-FET INTEGRATED CIRCUIT PG2253T6S RF FRONT-END IC FOR BluetoothTM CLASS 1 DESCRIPTION The PG2253T6S is a RF front-end integrated circuit for Bluetooth Class 1 and includes TX/Bypass switch and a power amplifier with low-pass filter. And this device has no RF matching parts.

Contextual Info: MOTOROLA Order this document by MRF15090/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF15090 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM

Contextual Info: DATA SHEET GaAs HJ-FET INTEGRATED CIRCUIT PG2253T6S RF FRONT-END IC FOR Bluetooth TM CLASS 1 DESCRIPTION The μPG2253T6S is a RF front-end integrated circuit for Bluetooth Class 1 and includes TX/Bypass switch and a power amplifier with low-pass filter. And this device has no RF matching parts.

SSPA

Abstract: SSPA C Band SSPA-1722-80 5.7 GHz power amplifier x band high power amplifier base station high power amplifier power amplifier s band ghz mhz
Contextual Info: Solid State Power Amplifier High Power, Broadband, L & S Band Solid State RF Amplifier • • • • Aethercomm P/N SSPA 1722-80 is a high power, solid state RF amplifier SSPA which covers in excess of 500 MHz of bandwidth from 1.7 to 2.2 GHz. This Class AB SSPA offers greater than 30

microwave amplifier 2.4 ghz 10 watts

Abstract: amplifier TRANSISTOR 12 GHZ 2324-12L
Contextual Info: 2324-12L 12 Watts - 20 Volts, Class C Microwave 2300 - 2400 MHz GENERAL DESCRIPTION The 2324-12L is a COMMON BASE transistor capable of providing 12 Watts of Class C, RF output power over the band 2300-2400 MHz. This transistor is specifically designed for Microwave Broadband Class C amplifier

GENNUM HEARING AIDS

Abstract: Hearing Aid Circuit Diagram circuit diagram of hearing aid BK1606 hearing aid circuit hearing aid schematic LC506 low power hearing aids hearing aids amplifiers LE507
Contextual Info: Class A Output Stage with Input Biasing LE507 DATA SHEET DESCRIPTION FEATURES The LE507 is a low voltage class A amplifier design, primarily for low voltage and low power use. The broad application include AF output stages, RF amplifiers and output stages of

10AM11

Abstract: 08.24.35 ic sheet data 9847 9508 ic 4521 90436 130-047
Contextual Info: 10AM11 11 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 10AM11 is a COMMON EMITTER transistor capable of providing 11 Watts of Class A, RF output power to1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes

10A060

Abstract: 20989 78561 MAG 1832 55FT
Contextual Info: 10A060 6 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 10A060 is a COMMON EMITTER transistor capable of providing 6 Watts of Class A, RF output power to 1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes

fe 8622

Abstract: 422-371 23A025 521603 18896
Contextual Info: 23A025 2.5 Watts, 20 Volts, Class A Linear to 2300 MHz GENERAL DESCRIPTION The 23A025 is a COMMON EMITTER transistor capable of providing 2.5 Watts of Class A, RF output power to 2300 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes

23A017

Abstract: 33797 4561 140452
Contextual Info: 23A017 1.7 Watts, 20 Volts, Class A Linear to 2300 MHz GENERAL DESCRIPTION The 23A017 is a COMMON EMITTER transistor capable of providing 1.7 Watts of Class A, RF output power to 2300 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes

97942

Abstract: 74929 Transistor 5503 231369 TRansistor A 940 10AM20 273157
Contextual Info: 10AM20 20 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 10AM20 is a COMMON EMITTER transistor capable of providing 20 Watts of Class A, RF output power to 1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes

C 33725

Abstract: 4501 ic 6483 10A015 080620 144089 040196 BVces 33970 34-41-50
Contextual Info: 10A015 1.5 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 10A015 is a COMMON EMITTER transistor capable of providing 1.5 Watts of Class A, RF Output power to 1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes

429C-03

Abstract: motorola rf Power Transistor siceront kf
Contextual Info: M O T O R O LA O rder th is d ocum ent SEMICONDUCTOR TECHNICAL DATA by MRFA2602/D The RF Line MRFA2602 Broadband RF Pow er Am plifier for T V Transm itter The MRFA2602 is a solid state class A amplifier and is specifically designed for TV transposers and transmitters. This amplifier incorporates microstrip

30054

Abstract: transistor 30054 8560 cob 2a82 17052 30054 transistor 326970 Diode 2A8 150401 28438
Contextual Info: 2A8 0.5 Watts, 20 Volts, Class A Linear to 2000 MHz GENERAL DESCRIPTION The 2A8 is a COMMON EMITTER transistor capable of providing 0.5 Watts of Class A, RF output power at 2000 MHz. This transistor is specifically designed for general Class A amplifier applicatons. It utilizes gold

2 watt rf transistor

Abstract: 10 watt power transistor 100 watt transistor transistor Common Base amplifier RF TRANSISTOR 10 WATT common base transistor
Contextual Info: 1014 - 2 2 Watt - 28 Volts, Class C Microwave 1000 - 1400 MHz GENERAL DESCRIPTION CASE OUTLINE 55LT, STYLE 1 The 1014-2 is a COMMON BASE transistor capable of providing 2 Watts of Class C, RF Output Power over the band 1000-1400 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes

ic an 7591

Abstract: ic 7483 023243 TRANSISTOR 1a5 7483 IC an 7591 44222 63-8687 74718 5310
Contextual Info: 1A5/1A5A 0.5 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 1A5/1A5A is a COMMON EMITTER transistor capable of providing 0.5 Watt of Class A, RF output power to 1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes gold

Contextual Info: STM1645-30 RF POWER MODULE SATELLITE COMMUNICATION APPLICATIONS . CLASS C SATELLITECOMMUNICATIONS AMPLIFIER • 1625-1665 MHz . 12/28 VOLTS . INPUT/OUTPUT 50 OHMS . Pout = 30 W MIN. . GAIN = 34.8 dB MIN. DESCRIPTION The STM1645-30 hybrid RF Power Module is

I960

Abstract: general electric
Contextual Info: BEAM PENTODE FOR RF CLASS C APPLICATIONS — - DESCRIPTION A N D RATING The 7701 is a miniature beam-power pentode suitable for Class C radio­ frequency power-amplifier and frequency-multiplier service. B A SIN G D IA G R A M GENERAL ELECTRICAL Cathode— Coated Unipotential

Contextual Info: Document Number: MHL9236NN Rev. 0, 12/2006 ARCHIVE INFORMATION Cellular Band RF Linear LDMOS Amplifier Designed for ultra - linear amplifier applications in 50 ohm systems operating in the cellular frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase

BLW77

Abstract: blw77 datasheet HF band power amplifier
Contextual Info: BLW77 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLW77 is Designed for use in class-AB or class-B operated high power transmitters in the H.F. and V.H.F bands and, as a Linear amplifier in the H.F. band. PACKAGE STYLE .500 4L FLG FEATURES: • PG = 12 dB min. at 15-30 W/1.6-28 MHz

"class AB Linear"

Abstract: hf class AB power amplifier mosfet HF100-12 HF TRANSISTORS linear mosfet HF20-12F
Contextual Info: RF Power Transistors HFSSB ASI HF transistors are characterized for broadband amplifier operation, 2-30MHz devices provide high linear power output for a variety of military, commercial and amateur communication equipment. 12.5 Volt, Class AB Linear BIAS P out

sd1490

Contextual Info: SD1490 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1490 is a Common Emitter Device Designed for Class A and AB Amplifier Applications in Television Band IV & V Transmitters. FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting • Internal Matching

Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF19120/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF19120 Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN- PCS/cellular radio and WLL applications.

Contextual Info: RFPA3026 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER RFPA3026 Proposed 2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER Package: QFN VCC=5V Features RFPA3026  P1dB =33.6dBm at 5V  802.11g 54Mb/s Class AB Performance RF IN  POUT =26dBm at 2.5% EVM, VCC 5V, 570mA  POUT =27dBm at 2.5% EVM,