AMPLIFIER RF CLASS B Search Results

power transistor audio amplifier 500 watts

Abstract: 4CV100000 Eimac amplifier 200 watt audio amplifier 4CV100 710b high power 500 watts audio amplifier push pull class AB RF linear RF push pull power amplifier
Contextual Info: Eimac Power Grid Tube - Quick Reference Data Sheet Page 1 of 1 4CV100,000E The Eimac 4CV100,000E is recommended for use as a Class C RF amplifier, a class AB RF amplifier, a Class AB push-pull audio amplifier or modulator, as well as a high level modulated or pulse duration modulated amplifier.

RF106-12

Contextual Info: RF106 900 MHz ISM Band Power Amplifier Data Sheet 100981B August 2002 ii Conexant 100981B 08/26/02 RF106 900 MHz ISM Band Power Amplifier The RF106 is a three-stage class AB-type RF power amplifier for 900 MHz Industrial, Distinguishing Features Scientific, and Medical ISM band applications. It delivers output power proportional ! Class AB-type RF power amplifier

MRFA2604

Abstract: data sw 3205 transistor cq 529 class c tuned amplifier
Contextual Info: MOTOROLA O rder this docum ent by MRFA2604/D SEMICONDUCTOR TECHNICAL DATA MRFA2604 The RF Line Broadband R.F. Array for T V TVansmitter 230 W PEAK SYNC. 4 7 0 -8 6 0 MHz CLASS AB RF POWER AMPLIFIER The MRFA2604 is a solid state class AB amplifier specifically designed for TV

siceront kf

Abstract: transistor motorola 351 motorola rf Power Transistor IrL 1540 N 1307 TRANSISTOR equivalent siceront kf 1201 429C MRFA2602 amplifier application circuit motorola 100 w amplifier
Contextual Info: MOTOROLA Order this document by MRFA2602/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRFA2602 Broadband RF Power Amplifier for TV Transmitter The MRFA2602 is a solid state class A amplifier and is specifically designed for TV transposers and transmitters. This amplifier incorporates microstrip

429C

Abstract: MRFA2602 TRANSISTOR C 3205 tv transmitter amplifier circuit
Contextual Info: MOTOROLA Order this document by MRFA2602/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRFA2602 Broadband RF Power Amplifier for TV Transmitter The MRFA2602 is a solid state class A amplifier and is specifically designed for TV transposers and transmitters. This amplifier incorporates microstrip

Contextual Info: MOTOROLA Order this document by MRF240/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistors MRF240 . . . designed for 13.6 volt VHF large-signal class C and class AB linear power amplifier applications in commercial and industrial equipment.

T6s MARKING

Contextual Info: GaAs HJ-FET INTEGRATED CIRCUIT PG2253T6S RF FRONT-END IC FOR BluetoothTM CLASS 1 DESCRIPTION The PG2253T6S is a RF front-end integrated circuit for Bluetooth Class 1 and includes TX/Bypass switch and a power amplifier with low-pass filter. And this device has no RF matching parts.

Contextual Info: GaAs HJ-FET INTEGRATED CIRCUIT PG2253T6S RF FRONT-END IC FOR BluetoothTM CLASS 1 DESCRIPTION The PG2253T6S is a RF front-end integrated circuit for Bluetooth Class 1 and includes TX/Bypass switch and a power amplifier with low-pass filter. And this device has no RF matching parts.

MRF896

Abstract: 1N4001 Motorola
Contextual Info: MOTOROLA Order this document by MRF896/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistors MRF896 Designed for 24 Volt UHF large–signal, common emitter, Class AB and Class A linear amplifier applications in industrial and commercial FM/AM equipment

3cx20000a7

Abstract: 3CX2000 500 watts power amplifier 500 watts amplifier "Power Triode" "RF Amplifier" 211 power Triode amp classes c 3CX20 operation of class c amplifier
Contextual Info: Eimac Power Grid Tube - Quick Reference Data Sheet Page 1 of 1 3CX20,000A7 The Eimac 3CX20,000A7 is a high-mu power triode intended for use as a zero bias Class B RF amplifier or Class C power amplifier or oscillator. Class B operation with zero grid bias offers circuit simplicity. In

CAPACITOR chip murata mtbf

Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ rohm mtbf CAPACITOR chip mtbf GX-0300-55-22 IrL 1540 N RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ BD136 RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ transistor bd136
Contextual Info: MOTOROLA Order this document by MRF15030/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF15030 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM

Contextual Info: MOTOROLA Order this document by MRF15090/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF15090 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM

Contextual Info: MOTOROLA Order this document by MRF15030/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF15030 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM

CAPACITOR chip murata mtbf

Abstract: MUR5120 irl 1520 MUR5120T3 IrL 1540 N 462 variable capacitor mallory capacitor 1500 uF CAPACITOR chip mtbf MRF15090 rohm mtbf
Contextual Info: MOTOROLA Order this document by MRF15090/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF15090 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM

Contextual Info: 1 9 - 4 076 ; Rev 0; 3/08 Low RF Susceptibility, Mono Audio Subsystem with DirectDrive Headphone Amplifier The MAX9877 combines a high-efficiency Class D audio power amplifier with a stereo Class AB capacitorless DirectDrive headphone amplifier. Maxim’s 3rd

Contextual Info: NXP digital I2S-input mono Class-D audio amplifier TFA9882 Save power and space with I2S-input Class-D audio amplifier This small, mono digital-input Class-D audio amplifier delivers up to 3.4 W of power. It has ` ultra-low quiescent power consumption 6.5 mW , minimizes RF susceptibility, and is optimized `

CAPACITOR chip murata mtbf

Abstract: BD136
Contextual Info: MOTOROLA Order this document by MRF15090/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 22MAR02 The RF Line MRF15090 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM

TO-217

Contextual Info: 2N6093 NPN SILICON RF POWER TRANSISTOR YLE TO-217 DESCRIPTION: The 2N6093 is a High Gain Linear RF Power Amplifier Used in Class A or Class B Applications With Individual Ballast Emitter Resistor and Built in Temperature Sensing Diode. VMBOL < m o 0.2D5 0.325

Contextual Info: m 2N6093 \ \ NPN SILICON RF POWER TRANSISTOR PACKAGE S YLE TO-217 DESCRIPTION: The 2N6093 is a High Gain Linear RF Power Amplifier Used in Class A or Class B Applications With Individual Ballast Emitter Resistor and Built in Temperature Sensing Diode. SYM BOL

BD136

Contextual Info: MOTOROLA Order this document by MRF15090/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 15MAR02 The RF Line MRF15090 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM

CAPACITOR chip murata mtbf

Abstract: IrL 1540 N CAPACITOR chip mtbf transistor bd135 transistor motorola 351 BD135 BD136 MJD47 MRF15090 MUR5120T3
Contextual Info: MOTOROLA Order this document by MRF15090/D SEMICONDUCTOR TECHNICAL DATA Advance Information The RF Line MRF15090 NPN Silicon RF Power Transistor Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM

transistor motorola 114-8

Abstract: MRF861 2n2222 npn transistor motorola s 114-8 2N2222 SOA power transistor 2n2222 motorola 114-8
Contextual Info: Order this data sheet by MRF861/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF861 NPN Silicon RF Power Transistor M otorola Preferred Device CLASS A 800-960 MHz 27 W CW , 24 V NPN SILICON RF POWER TRANSISTOR Designed for 24 Volt UHF large-signal, common emitter, class A linear amplifier

Contextual Info: DATA SHEET GaAs HJ-FET INTEGRATED CIRCUIT PG2253T6S RF FRONT-END IC FOR Bluetooth TM CLASS 1 DESCRIPTION The μPG2253T6S is a RF front-end integrated circuit for Bluetooth Class 1 and includes TX/Bypass switch and a power amplifier with low-pass filter. And this device has no RF matching parts.

MRF860

Abstract: 2n2222 npn transistor 2N2222 rf
Contextual Info: Order this data sheet by MRF860/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M RF860 NPN Silicon RF Power lYansistor Motorola Preferred Device CLASS A 800-960 MHz 13.7 W CW , 24 V NPN SILICON RF POWER TRANSISTOR Designed for 24 Volt UHF large-signal, common emitter, class A linear amplifier