AMPLIFIER GSM SIGNAL Search Results

TAMP-960LN

Abstract: MICROWAVE tower specification sheet
Contextual Info: Application Note GSM-EDGE Performance vs. Output Power TAMP-960LN+ AN-60-044 GSM-EDGE Drop-In Low Noise Amplifier Module Mini-Circuits TAMP-960LN+ Ultra-low Noise Drop-In Amplifier Module is an ideal low noise amplifier for use in GSM-EDGE Base Station or Tower Mounted Low Noise Applications. The

Contextual Info: APPLICATION NOTE - AWT0908 AWT0908 Power Amplifier for GSM Phones Introduction This application note describes the use of ANADIGICS AW T0908 Single Supply, GSM Band, Power Amplifier . The AW T0908 is specifically designed for GSM Cellular handset applications. The 28-pin SOIC package allows

Contextual Info: LMV242 LMV242 Dual Output, Quad-Band GSM/GPRS Power Amplifier Controller Literature Number: SNWS014B LMV242 Dual Output, Quad-Band GSM/GPRS Power Amplifier Controller General Description Features The LMV242 is a power amplifier PA controller intended for

Contextual Info: WIRELESS - Power Amplifier AWT0908 TX POWER MMIC Advanced Product Information Rev 0 900 MHz Band GSM GaAs Power Amplifier 1C DESCRIPTION The AWT0908X is a monolithic Power Amplifier IC suited for GSM cellular telephone Applications FEATURES High Output Power

Contextual Info: WIRELESS - Power Amplifier AWT0904 TX POWER MMIC Advanced Product Information Rev 7 900 MHz Band GSM GaAs Power Amplifier 1C DESCRIPTION The A W T0904 is a monolithic Power Amplifier 1C suited for GSM cellular telephone Applications FEATURES Single Supply

Contextual Info: WIRELESS - Power Amplifier AWT0908 TX POWER MMIC Advanced Product Information Rev 0 900 MHz Band GSM GaAs Power Amplifier IC DESCRIPTION The AWT0908X is a monolithic Power Amplifier IC suited for GSM cellular telephone Applications FEATURES High Output Power

Contextual Info: Philips Semiconductors Objective specification GSM 4 W power amplifier CGY2010G FEATURES GENERAL DESCRIPTION • Power amplifier PA final stage efficiency 65% The CGY2010G is a GSM class 4 GaAs power amplifier specifically designed to operate at 4.8 V supply. The chip

HF power amplifier

Abstract: ze 003 ic CGY2010G LQFP48 LQFP64 LQFP80 PCA5075 SA1620
Contextual Info: Philips Semiconductors Objective specification GSM 4 W power amplifier CGY2010G FEATURES GENERAL DESCRIPTION • Power amplifier PA final stage efficiency 65% The CGY2010G is a GSM class 4 GaAs power amplifier specifically designed to operate at 4.8 V supply. The chip

Contextual Info: WIRELESS - Power Amplifier AWT0904 TX POWER MMIC Advanced Product Information Rev 7 900 MHz Band GSM GaAs Power Amplifier 1C DESCRIPTION The AWT0904 is a monolithic Power Amplifier 1C suited for GSM cellular telephone Applications FEATURES Single Supply High Output Power

Contextual Info: INTEGRATED CIRCUITS DATA SHEET CGY2013G GSM 4 W power amplifier Objective specification File under Integrated Circuits, IC17 1996 Jul 12 Philips Semiconductors Objective specification GSM 4 W power amplifier CGY2013G FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 45%

gsm signal amplifier

Abstract: gsm amplifier AWG171638-1 C406506576 172165-1
Contextual Info: m at&t Preliminary Data Sheet March 1993 Microelectronics GSM Low-Noise Amplifier Features Description • Frequency range from 890 MHz to 915 MHz AT&T’s GSM Low-Noise Amplifier was specially designed for applications in GSM base station receivers and operates in a frequency range from

U244

Abstract: 800MHz gsm Handset Circuit Diagram block diagram for automatic room power control RF2123 schematic diagram 48v dc charger automatic room power control applications LA 7625 schematic diagram 50 VDC POWER SUPPLY 6v battery charger circuit diagram schematic diagram 48v charger
Contextual Info: RFI RF2123 MICRO-DEVICES GSM POWER AMPLIFIER T yp ica l A p plicatio ns • 4.8V GSM Cellular Handsets Commercial and Consumer Systems • 6V GSM Cellular Handsets Portable Battery Powered Equipment < cc Product Description .158 .150 The RF2123 is a high power, high efficiency amplifier IC.

PCF5078T

Abstract: PCF5078 VS218
Contextual Info: INTEGRATED CIRCUITS DATA SHEET PCF5078 Power amplifier controller for GSM and PCN systems Product specification File under Integrated Circuits, IC17 1999 Apr 12 Philips Semiconductors Product specification Power amplifier controller for GSM and PCN systems

philips 561

Abstract: PCF5077T SSOP16 BGY2
Contextual Info: INTEGRATED CIRCUITS DATA SHEET PCF5077T Power amplifier controller for GSM and PCN systems Preliminary specification File under Integrated Circuits, IC17 1997 Nov 19 Philips Semiconductors Preliminary specification Power amplifier controller for GSM and PCN systems

gsm signal Booster

Abstract: gsm signal amplifier gsm Booster GSM max power diagram DML Microwave gsm power amplifiers 10 w 1702 gsm booster circuit circuit booster gsm md68
Contextual Info: 27223 DML Microwave 4/7/01 1:51 pm Page 5 GSM P.A. 10 W BOOSTER AMPLIFIER EXTENDS POWER CAPABILITY OF GSM MICROCELL BASE STATIONS GENERAL INFORMATION ADVANTAGES The MCE DML Microwave Booster Amplifier increases the power capability of GSM Microcell Base Stations up to 10. The product is compact

RF5110

Abstract: RF5111 GSM900
Contextual Info: RF5110 3V GSM POWER AMPLIFIER Typical Applications • 3V GSM Cellular Handsets • Commercial and Consumer Systems • 3V Dual-Band/Triple-Band Handsets • Portable Battery-Powered Equipment • GPRS Compatible Product Description -A- The RF5110 is a high-power, high-efficiency power amplifier module offering high performance in GSM OR GPRS

RF2173

Contextual Info: RF2173 3V GSM POWER AMPLIFIER Typical Applications • 3V GSM Cellular Handsets • Commercial and Consumer Systems • 3V Dual-Band/Triple-Band Handsets • Portable Battery-Powered Equipment • GPRS Compatible Product Description The RF2173 is a high power, high efficiency power amplifier module offering high performance in GSM or GPRS

CGY2013G

Abstract: LQFP48 PCA5075 SA1620 SMD0603
Contextual Info: Philips Semiconductors Objective specification GSM 4 W power amplifier CGY2013G FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 45% The CGY2013G is a GSM class 4 GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier specifically designed to operate at 3.6 V battery supply.

fca173

Abstract: h2lb FCA175 BA891 CGY2014TT philips rf manual HTSSOP20
Contextual Info: INTEGRATED CIRCUITS DATA SHEET CGY2014TT GSM/DCS/PCS power amplifier Product specification Supersedes data of 2000 Apr 11 File under Integrated Circuits, IC17 2000 Oct 16 Philips Semiconductors Product specification GSM/DCS/PCS power amplifier CGY2014TT FEATURES

RF5111

Abstract: GSM900 RF5110 SiGe BiCMOS transistor bias block generator shunt PFC915
Contextual Info: RF5110 3V GSM POWER AMPLIFIER Typical Applications • 3V GSM Cellular Handsets • Commercial and Consumer Systems • 3V Dual-Band/Triple-Band Handsets • Portable Battery-Powered Equipment • GPRS Compatible Product Description -A- The RF5110 is a high-power, high-efficiency power amplifier module offering high performance in GSM OR GPRS

RF2173

Abstract: IPC-SM-782 RF2174 030514
Contextual Info: RF2173 3V GSM POWER AMPLIFIER Typical Applications • 3V GSM Cellular Handsets • Commercial and Consumer Systems • 3V Dual-Band/Triple-Band Handsets • Portable Battery-Powered Equipment • GPRS Compatible Product Description The RF2173 is a high power, high efficiency power amplifier module offering high performance in GSM or GPRS

c1533

Contextual Info: RF2173 3V GSM POWER AMPLIFIER Typical Applications • 3V GSM Cellular Handsets • Commercial and Consumer Systems • 3V Dual-Band/Triple-Band Handsets • Portable Battery-Powered Equipment • GPRS Compatible Product Description 1 2 The RF2173 is a high power, high efficiency power amplifier module offering high performance in GSM or GPRS

AWT6223

Abstract: duplex filter wcdma frontend
Contextual Info: Application Note WCDMA/GSM/GPRS/Polar EDGE Power Amplifier Module with Integrated Power Control Revision 0 RELEVANT PRODUCTS • AWT6223 INTRODUCTION GENERAL DESCRIPTION This WEDGE Power Amplifier Module supports GSM type dual, tri and quad band applications for GMSK

2-bit comparator

Abstract: PCF5075 SSOP20 BAS70-07
Contextual Info: INTEGRATED CIRCUITS DATA SHEET PCF5075 Power amplifier controller for GSM and PCN systems Product specification Supersedes data of 1996 Feb 15 File under Integrated Circuits, IC17 1997 Feb 27 Philips Semiconductors Product specification Power amplifier controller for GSM and