AMPLIFIER 1 2 GHZ Search Results

Contextual Info: FMAM1019 DATA SHEET 40 dB Gain 0.8 dB NF Low Noise High Gain Amplifier Operating From 1 GHz to 2 GHz with 11 dBm P1dB and SMA The FMAM1019 is a wideband low noise RF coaxial power amplifier operating in the 1 GHz to 2 GHz frequency range. The amplifier offers 0.8 dB noise

MAAP-000080-DIE000

Abstract: MAAP-000080-MCH000 MAAP-000080-PKG003 MAAP-000080-SMB004 30dBm
Contextual Info: MAAP-000080-DIE000 Amplifier, Power, 1 W 2-18 GHz Rev Preliminary Datasheet Features ♦ 1 Watt Saturated Output Power Level ♦ Variable Drain Voltage 6-10V Operation ♦ MSAG Process Description The MAAP-000080-DIE000 is a 2-stage 1 W distributed power amplifier

Contextual Info: SLNA-020-35-15-SMA DATA SHEET 1.5 dB NF Low Noise Amplifier Operating From 1 GHz to 2 GHz with 35 dB Gain, 10 dBm and SMA SLNA-020-35-15-SMA is a L-band coaxial low noise amplifier operating in the 1 to 2 GHz frequency range. The amplifier offers 1.5 dB noise figure, 10 dBm

Contextual Info: LA2080N2823 2-8GHz Broadband Low Noise Medium Power Amplifier Test report is for reference only. TEST REPORT For LA2080N2823 Page 1 LA2080N2823 2-8GHz Broadband Low Noise Medium Power Amplifier Technical Specification 2-8 Frequency Range GHz 24 min, 32 max

BFR90 transistor

Abstract: BFR90
Contextual Info: BFR90 VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features 3 B 1 C 3 • High power gain • Low noise figure • High transition frequency 2 E 2 Applications 1 RF amplifier up to GHz range specially for wide band antenna amplifier. 19039

BFR92 transistor

Abstract: bfr92
Contextual Info: BFR92 VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features • High power gain • Low noise figure • High transition frequency C 3 2 1 1 B Applications RF amplifier up to GHz range specially for wide band antenna amplifier. 3 E 2 18822

bfr96ts

Contextual Info: BFR96TS VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features 3 B 1 C 3 • High power gain • Low noise figure • High transition frequency 2 E 2 Applications 1 RF amplifier up to GHz range specially for wide band antenna amplifier. 19039

BFR96TS

Contextual Info: BFR96TS VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features 3 B 1 C 3 • High power gain • Low noise figure • High transition frequency 2 E 2 Applications 1 RF amplifier up to GHz range specially for wide band antenna amplifier. 19039

transistor BFR91A

Abstract: BFR91A
Contextual Info: BFR91A VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features 3 B 1 C 3 • High power gain • Low noise figure • High transition frequency 2 E 2 Applications 1 RF amplifier up to GHz range specially for wide band antenna amplifier. 19039

Contextual Info: BFR93 VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features • High power gain • Low noise figure • High transition frequency C 3 2 1 1 B Applications RF amplifier up to GHz range specially for wide band antenna amplifier. 3 E 2 18822

Contextual Info: BFR93 VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features • High power gain • Low noise figure • High transition frequency C 3 2 1 1 B Applications RF amplifier up to GHz range specially for wide band antenna amplifier. 3 E 2 18822

Contextual Info: BFR91 VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features 3 B 1 C 3 • High power gain • Low noise figure • High transition frequency 2 E 2 Applications 1 RF amplifier up to GHz range specially for wide band antenna amplifier. 19039

RF TRANSISTOR 2.5 GHZ

Abstract: TO50 transistor
Contextual Info: BFR91 VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features 3 B 1 C 3 • High power gain • Low noise figure • High transition frequency 2 E 2 Applications 1 RF amplifier up to GHz range specially for wide band antenna amplifier. 19039

Contextual Info: HEWLETT PAC KARD Avantek Products Surface Mount Cascadable Amplifier 1 to 2 GHz Technical Data PPA-2123 Features Description Pin Configuration • Frequency Range: 1 to 2 GHz The PPA-2123 is a multistage, lownoise, high-gain amplifier utilizing discrete GaAs FETs on a thin-film

Contextual Info: HP/Avantek 2-6GHz Amplifier Replacements DFT/DMT-6000’s Series HP/Avantek 2-6GHz Amplifier Replacements without Temperature Compensation DBS Model Number Frequency Response GHz Min. Gain (dB) Gain (dB) PldB (dBm) Typ. Noise Figure (dB) Typ./Max. Min. D F T -6 2 3 1

Contextual Info: +6 2  BGA3023 1.2 GHz 20 dB gain CATV amplifier Rev. 2 — 25 February 2015 Product data sheet 1. Product profile 1.1 General description The BGA3023 MMIC is a dual wideband amplifier with internal biasing. It is a Medium Power Amplifier MPA , specifically designed as an output stage for high linearity CATV

transistor BFR91

Abstract: transistor c 2316 BFR91 BFR91 transistor
Contextual Info: BFR91 Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 94 9308 1 BFR91 Marking: BFR91 Plastic case TO 50 1= Collector; 2= Emitter; 3= Base

BFR90 application

Abstract: BFR90 transistor BFR90 BFR90 amplifier
Contextual Info: BFR90 Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 94 9308 1 BFR90 Marking: BFR90 Plastic case TO 50 1= Collector; 2= Emitter; 3= Base

Contextual Info: +6 2  BGA3021 1.2 GHz 16 dB gain CATV amplifier Rev. 2 — 25 February 2015 Product data sheet 1. Product profile 1.1 General description The BGA3021 MMIC is a dual wideband amplifier with internal biasing. It is a Medium Power Amplifier MPA , specifically designed as an output stage for high linearity CATV

Contextual Info: +6 2  BGA3022 1.2 GHz 18 dB gain CATV amplifier Rev. 2 — 25 February 2015 Product data sheet 1. Product profile 1.1 General description The BGA3022 MMIC is a dual wideband amplifier with internal biasing. It is a Medium Power Amplifier MPA , specifically designed as an output stage for high linearity CATV

X7R murata

Abstract: Marking code CGB
Contextual Info: CGB 240 Datasheet 2-Stage Bluetooth InGaP HBT Power Amplifier Description: Applications: • Bluetooth Class 1 The CGB240 GaAs Power Amplifier MMIC has been especially developed for wireless applications in the 2.4 - 2.5 GHz ISM band e.g. Bluetooth class 1 . Its

mmic marking code

Contextual Info: CGB 240 Datasheet 2-Stage Bluetooth InGaP HBT Power Amplifier Description: Applications: • Bluetooth Class 1 The CGB240 GaAs Power Amplifier MMIC has been especially developed for wireless applications in the 2.4 - 2.5 GHz ISM band e.g. Bluetooth class 1 . Its

Contextual Info: CGB 240 Datasheet 2-Stage Bluetooth InGaP HBT Power Amplifier Description: Applications: • Bluetooth Class 1 The CGB240 GaAs Power Amplifier MMIC has been especially developed for wireless applications in the 2.4 - 2.5 GHz ISM band e.g. Bluetooth class 1 . Its

j200 transistor

Abstract: 2SC4853 FH104 of transistor C 4908 62183 transistor c 3228 MARKING e1v
Contextual Info: Ordering number:ENN6218 NPN Epitaxial Planar Silicon Composite Transistor FH104 High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Package Dimensions unit:mm 2149 [FH104] 0.25 6 5 4 E2 1 2 0.65 2.0 C1 TR2 E1 3 1 : Collector1 2 : Emitter1