AM29F016 AMD Search Results

AM29F016

Abstract: EDI7F332MC
Contextual Info: White Electronic Designs EDI7F332MC 2Mx32 FLASH MODULE FEATURES „ „ 2Mx32 and 2x2Mx32 Densities „ Based on AMD - AM29F016 Flash Device „ Fast Read Access Time - 90ns „ Data Polling and Toggle Bit feature for detection of program or erase cycle completion

MARK J3

Abstract: AM29F016 EDI7F332MC amd AM29F016
Contextual Info: EDI7F332MC 2Mx32 FLASH MODULE DESCRIPTION FIG. 1 The EDI7F332MC and EDI7F2332MC are organized as one and two banks of 2Mx32 respectively. The modules are based on AMDs AM29F016 - 2Mx8 Flash device in TSOP packages which are mounted on an FR4 substrate. BLOCK DIAGRAMS

Contextual Info: moi EDI7F4334MC 4x4Megx32 ELECTRONIC DESIGNS. IN C 4x4Megx32 Flash Module Block Diagrams The EDI7F4334MC is organized as a 4 x 4Meg x 32 module which is based on AMDs AM29F016 - 2Meg x 8 Flash device in TSOP packages which are mounted on an FR4 substrate.

Contextual Info: WDI EDI7F4334MC 4x4Megx32 ELECTRONIC DESIGNS. INC 4x4Megx32 Flash Module Block Diagrams The EDI7F4334MC is organized as a 4 x4M eg x32 module which is based on AMDs AM29F016 - 2Meg x 8 Flash device in TSOP packages which are EDI7F4334MC-BNC mounted on an FR4 substrate.

29F016

Contextual Info: AMENDMENT AMD£I Am29F016 Data Sheet 1996 Flash Products Data Book/Handbook INTRODUCTION This amendment supersedes information regarding the Am 29F016 device in the 1996 Flash Products Data Book/Handbook, PID 11796D. This document includes replacem ent pages for the Am 29F016 data sheet,

AM29F016

Abstract: 80 pin simm flash EDI7F332MC
Contextual Info: EDI7F332MC White Electronic Designs 2Mx32 FLASH MODULE FIG. 1 DESCRIPTION BLOCK DIAGRAMS The EDI7F332MC and EDI7F2332MC are organized as one and two banks of 2Mx32 respectively. The modules are based on AMDs AM29F016 - 2Mx8 Flash device in TSOP packages which are mounted on a FR4 substrate.

AM29F016

Abstract: AM29F016-90 SA28 SA29 SA30 AM29F016 amd
Contextual Info: FINAL Am29F016 Advanced Micro Devices 16 Megabit 2,097,152 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 Volt ± 10% for read and write operations ■ Embedded Program Algorithms — Minimizes system level power requirements

9018

Abstract: AM29F016 EDI7F332MC
Contextual Info: EDI7F332MC 2Megx32 2Megx32 Flash Module The EDI7F332MC and EDI7F2332MC are organized as one and two banks of 2 meg x 32 respectively. The modules are based on AMDs AM29F016 - 2Meg x 8 Flash device in TSOP packages which are mounted on an FR4 substrate. Both modules offer access times between 90 and

Contextual Info: EDI7F332MC 2 MEG x 32 FLASH MODULE FIG. 1 DESCRIPTION BLOCK DIAGRAMS The EDI7F332MC and EDI7F2332MC are organized as one and two banks of 2 Meg x 32 respectively. The modules are based on AMDs AM29F016 - 2 Meg x 8 Flash device in TSOP packages which are mounted on an FR4 substrate.

Contextual Info: EDI7F332MC ELECTRONIC DESIGNS INC 2Megx32 2Megx32 Flash Module Block Diagrams The EDI7F332MC and EDI7F2332MC are orga­ nized as one and two banks of 2 meg x 32 respec­ EDI7F332MC-BNC 2Megx3280pin SIMM tively. The modules are based on AMDs AM29F016 - 2Meg x 8 Flash device in TSOP packages which are

AM29F016

Contextual Info: EDI7F4334MC 4x4Megx32 4x4Megx32 Flash Module Block Diagrams The EDI7F4334MC is organized as a 4 x 4Meg x 32 module which is based on AMDs AM29F016 - 2Meg x 8 Flash device in TSOP packages which are mounted on an FR4 substrate. EDI7F4334MC-BNC 4X4Megx32 80 pin SIMM

AM29F016

Abstract: Flash SIMM 80
Contextual Info: EDI7F4334MC • ELECTRONIC DESIGNS, INC. I 4x4Megx32 4x4Megx32 Flash Module Block Diagrams The EDI7F4334MC is organized as a 4 x 4 M e g x 3 2 module which is based on AMDs AM29F016 - 2Meg EDI7F4334MC-BNC 4X4Megx3280pin SIMM x 8 Flash device in TSOP packages which are

Contextual Info: Am29F016B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.32 µm process technology — Compatible with 0.5 µm Am29F016 device

amd AM29F016

Abstract: am29f016b-75
Contextual Info: Am29F016B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.32 µm process technology — Compatible with 0.5 µm Am29F016 device

AM29F016D-120

Abstract: AM29F016D-150 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13
Contextual Info: Am29F016D 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.23 µm process technology — Compatible with 0.5 µm Am29F016 and 0.32 µm

AM29F016

Abstract: SA28 SA29 SA30 AM29F016 amd
Contextual Info: FINAL Am29F016 16-Megabit 2,097,152 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 Volt ± 10% for read and write operations — Minimizes system level power requirements ■ Compatible with JEDEC-standards — Pinout and software compatible with

Contextual Info: Am29F016B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.32 µm process technology — Compatible with 0.5 µm Am29F016 device

AM29F016D-120

Abstract: AM29F016D-150 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13
Contextual Info: Am29F016D 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.23 µm process technology — Compatible with 0.5 µm Am29F016 and 0.32 µm

Contextual Info: ADVANCE INFORM ATIO N Am29F016 Advanced Micro Devices 16-Megabit 2,097,152 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, write, and erase ■ — M inimizes system level power requirements ■ Com patible with JEDEC-standard com mands

Contextual Info: A D V A N C E IN F O R M A T IO N Am29F016 Advanced Micro Devices 16-Megabit 2,097.152 X 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, w rite, and erase ■ — Minimizes system level power requirements

interrupt service in embedded system

Abstract: am29f016 AD0-AD15 AM29F010 Am186ES
Contextual Info: Breaking Through the 1 MByte Address Barrier Using the Am186ES Microcontroller The x86 architecture has come to dominate the microprocessor landscape as the most successful architecture in the world. The 186 is the 16-bit microcontroller version of the x86 architecture and it has had similar success in the 16-bit

AM29F016

Contextual Info: FINAL A m 2 9 F 0 1 6 Advanced 16 Megabit 2,097,152 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Devices DISTINCTIVE CHARACTERISTICS • 5.0 Volt ± 10% for read and write operations — Minimizes system level power requirements ■ Compatible with JEDEC-standards

Contextual Info: Advanced Micro Devices A m 2 9 F0 1 6 16 Megabit 2,097,152 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 Volt ± 10% for read and write operations — Minimizes system level power requirements ■ Compatible with JEDEC-standards

Contextual Info: PRELIMINARY- a Advanced Micro Devices A m 29F 016 16-Megabit 2,097,152 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 Volt ± 10% for read and write operations ■ Embedded Program A lgorithm s — Automatically programs and verifies data at