AM29C82 Search Results

Contextual Info: Am29C827/Am29C828 Am29C927/Am29C928 Am29C827/Am29C828 Am29C927/Am29C928 High-Performance CMOS Bus Buffers DISTINCTIVE CHARACTERISTICS • • • High-speed CMOS buffers and inverters - D-Y delay = 7 ns typical Low standby power JEDEC FCT-compatible specs

Am29C82

Contextual Info: Am29C821 / Am29C823 Am29C921 /Am29C923 High-Performance CMOS Bus Interface Registers High-speed parallel positive edge-triggered registers with D-type flip-flops - CP-Y propagation delay = 8 ns typical • Low standby power • JEDEC FCT-compatible specs •

PD3024

Contextual Info: a Am29C827A/Am29C828A High-Performance CMOS Bus Buffers Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High-speed CMOS buffers and inverters ■ - D-Y delay = 4 ns typical ■ ■ ■ Low standby power JEDEC FCT-compatibie specs Very high output drive

Contextual Info: Advanced Micro Devices Am29C821 A/Am29C823A High-Performance CMOS Bus Interface Registers DISTINCTIVE CHARACTERISTICS • Proprietary edge-rate controlled outputs dramatically reduce undershoots, overshoots and ground bounce ■ Extra-wide 9- and 10-bit data paths

AM29C828APC

Abstract: Am29C827A
Contextual Info: Am29C827A/Am29C828A High-Performance CMOS Bus Buffers Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High-speed CMOS buffers and inverters - D-Y delay = 4 ns typical ■ Proprietary edge-rate controlled outputs dramatically reduce undershoots, overshoots,

cd0012

Contextual Info: Am29C821A/Am29C823A High-Performance CMOS Bus Interface Registers _ PRELIMINARY_ > 3 DISTINCTIVE CHARACTERISTICS • • • • High-speed parallel positive edge-triggered with D-type flip-flops

6267 ic pin details

Contextual Info: P re lim in a ry a Am29C827A/Am29C828A Advanced Micro High-Performance CMOS Bus Buffers Devices DISTINCTIVE CHARACTERISTICS • High-speed CMOS buffers and inverters - D-Y delay - 4 ns typical • Low standby power • JEDEC FCT-compatible specs • Very high output drive

Contextual Info: Am29C800/Am29800A DEVICE GATE COUNTS Part Numbar Equivalent Numbwr of O alM Am29C800 Family Am29C818 303 Am29C821 90 Am29C823 96 Am29C827 60 Am29C828 55 Am29C833 139 Am29C841 73 Am29C843 69 Am29C853 135 Am29C855 135 Am29C861 105 Am29C863 98 Am29800A Family

Am29CB21

Abstract: am29c800 cis 11-pin Am29C821
Contextual Info: Am29C821 / Am29C823 Am29C921 / Am29C923 High-Performance CMOS Bus Interface Registers • • • High-speed parallel positive edge-triggered registers with D-type flip-flops - CP-Y propagation delay - 8 ns typical Low standby power JEDEC FCT-compatible specs

Am29C900

Abstract: am29c827 AM29c928
Contextual Info: Am29C827/Am29C828 Am29C927/Am29C928 Am29C827/Am29C828 Am29C927/Am29C928 High-Performance CMOS Bus Buffers DISTINCTIVE CHARACTERISTICS High-speed CMOS buffers and inverters - D-Y delay = 7 ns typical Low standby power JEDEC FCT-compatible specs Io l “ 24 mA, Commercial and Military

Contextual Info: Advanced Micro Devices Am29C827A/Am29C828A High-Performance CMOS Bus Buffers DISTINCTIVE CHARACTERISTICS • High-speed CMOS buffers and Inverters - D-Y delay = 4 ns typical ■ Proprietary edge-rate controlled outputs dramatically reduce undershoots, overshoots,

Contextual Info: Am29C827A/Am29C828A High-Performance CMOS Bus Buffers Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • Proprietary edge-rate controlled outputs dramatically reduce undershoots, overshoots, and ground bounce JEDEC FCT-compatible specs ■ Very high output drive

Contextual Info: Am29C827A/Am29C828A High-Performance CMOS Bus Buffers > 3 DISTINCTIVE CHARACTERISTICS • • • • High-speed C M O S buffers and inverters - D-Y delay = 4 ns typical Low standby power

29C828

Contextual Info: Advanced Micro Devices Am29C827A/A rn29C828A High-Performance CMOS Bus Buffers DISTINCTIVE CHARACTERISTICS • High-speed CMOS buffers a r d in ve rte rs - D-Y delay = 4 ns typical ■ Low standby power ■ JEDEC FCT-compatible spec s ■ Power-up/down disable circuit provides for

Contextual Info: Preliminary & Advanced Micro Devices Am29C676 11-Bit DRAM Driver DISTINCTIVE CHARACTERISTICS • ■ ■ ■ ■ ■ Ideal for driving the eleven address lines of 4 Mbit x 1 and 4 Mbit x 4 DRAMs Capable of driving multiple RAS, CAS and WE control lines Drive capability from 50 pF through 500 pF with

basic buffer

Abstract: ICCM System signal path designer
Contextual Info: INTRODUCTION Am29800s, as well as the Am29C800s. The Am29800As are produced with AMD's patented IMOX bipolar process, which provides the speed and drive capability necessary for today's high-performance systems. This document contains product specifications for two series

AM2968A

Abstract: Am29C983 Multiple Bus Exchange
Contextual Info: Am2968A Advanced Micro Devices 256K Dynamic Memory Controller/Driver DISTINCTIVE CHARACTERISTICS Provides control for 16K, 64K, and 256K dynamic RAMs Outputs directly drive up to 88 DRAMs, with a guaran­ teed worst-case limit on the undershoot Highest-order two address bits select one of four banks

Contextual Info: FINAL Am7968/Am7969 Advanced Micro Devices TAXIchip Integrated Circuits Transparent Asynchronous Xmitter-Receiver Interface DISTINCTIVE CHARACTERISTICS • Parallel TTL bus interface ■ ■ — Eight Data and four Command Pins — or nine Data and three Command Pins

AM29368

Abstract: CGX068
Contextual Info: Am29368 Advanced Micro Devices 1 Megabit Dynamic Memory Controller/Driver DMC DISTINCTIVE CHARACTERISTICS Provides control for 16K, 64K, and 256K and 1-megabit dynamic RAMs Outputs directly drive up to 8 8 DRAMs, with a guaran­ teed worst-case limit on the undershoot

29C668

Contextual Info: a Preliminary Am29C668 Advanced Micro Devices 4M Configurable Dynamic Memory Controller/Driver DISTINCTIVE CHARACTERISTICS • Provides control for 4M, 1M, 256K, 64K dynamic RAMs Supports “Scrubbing” with refresh when used in an EDC system ■ Programmable Burst/Block Access support for

diode ys

Contextual Info: a Preliminary Advanced Micro Devices Am29C676 11-Bit DRAM Driver DISTINCTIVE CHARACTERISTICS • Ideal for driving the eleven address lines of 4 Mbit x 1 and 4 Mbit x 4 DRAMs ■ Minimized output-to-output skews reduce memory access time ■ Capable of driving multiple RAS, CAS and WE

IC MARKING NS-05

Abstract: smd code Yj 33 5962-8851601LX ST 431c
Contextual Info: AMD n REVISIONS LT R D A T E YR-H0-DA DESCRIPTION APPROVED A A d d e d b u r n - i n c o n d i t i o n C to 4 . 2 . a . l and 4 . 3 .2.b.l. D e v i c e ty p e s 03 an d 04 i n a c t i v e f o r n e w d esign. Not available from an approved source. E ditorial changes throughout.

block diagram of AMD K10

Abstract: AMD Functional
Contextual Info: Am29C668 Advanced Micro Devices 4M Configuration Dynamic Memory Controller/Driver DISTINCTIVE CHARACTERISTICS Supports CAS before RAS refresh • Provides control for 4M, 1M, 256K, 64K dynamic RAMs ■ Programmable Burst/Block Access support for A m 29000,68000 family, iAPX family

basic microprocessor block diagram

Abstract: 29C668
Contextual Info: Am29C668 4M Configuration Dynamic Memory Controller/Driver Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • Provides control for 4M, 1M, 256K, 64K dynamic RAMs ■ Programmable Burst/Block Access support for Am29000, 68000 family, iAPX family Selectable 2 or 4 bank drive