AM251 Search Results

am251

Abstract: AM256 motorola mc1
Contextual Info: AM251 THRU AM256 Shanghai Lunsure Electronic Technology Co.,LTD Tel:0086-21-37185008 Fax:0086-21-57152769 PRESS FIT AUTOMOTIVE RECTIFIER MOTOROLA Features Low leakage Low forward voltage drop High current capability High forward surge current capability VOLTAGE RANGE

press fit rectifier diode

Abstract: AM2501 Press Fit Diode AM2506 AM2512 AM2504 DIODE RECTIFIER press fit AM2502 am2508
Contextual Info: AM2501 THRU AM2512 Shanghai Lunsure Electronic Technology Co.,LTD Tel:0086-21-37185008 Fax:0086-21-57152769 HIGH VOLTAGE PRESS FIT DIODE FOR AUTOMOTIVE RECTIFIER MOTOROLA Features Low leakage Low forward voltage drop High current capability High forward surge current capability

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

af201

Abstract: AOX2051 Am319 AF211 AF212 AF203 AF216 AM2024 ls 11s AM211
Contextual Info: y i Am3550 MixeqT ECL/TTL I/O Mask-Programmable Gate Array • — PRELIMINARY DISTINCTIVE CHARACTERISTICS Up to 5228 equivalent gates - 576 internal cells - Up to 124 l/O s H igh-perform ance, low -pow er ECL internal gates - W orst case Tpd = 0.6 ns Hi-Speed

am 332

Abstract: AM2001 Ax292
Contextual Info: Am3500 Mask-Programmable ECL G ate Array PR ELIM IN ARY > 3 u en DISTINCTIVE CHARACTERISTICS U nlim ited use o f high-pow er m acros Large m acrocell library containing o v e r 200 functions - Supported o n m ajor CAE w orkstations - S uperset o f MCA-2 Advanced oxide isolated bipolar LSI process technology

Contextual Info: Nylon Strain Relief Accessories - Thread Adapters - Nickel Plated Brass Hex & Round - PG/NPT/Metric Threads w w w. s e a l c o nu s a . c o m Thread Adapters: PG to NPT Threads Dealing with foreign products? Is connecting a challenge? Well, look no further!

af201

Abstract: F2018 AM211 am 332 F2017 SEM 2005 16 PINS inverter
Contextual Info: Am3550 Mixeçt ÉCL/TTL I/O Mask-Programmable Gate Array PRELIMINARY DISTINCTIVE CHARACTERISTICS Up to 5228 equivalent gates - 576 internal cells - Up to 124 l/O s H igh-perform ance, low -pow er ECL internal gates - W orst case Tpd = 0.6 ns Hi-Speed = 0.7 ns (Medium)

am2022

Abstract: am22 full adder circuit using xor and nand gates AM2031 AM2024 AM2051 t950 half adder circuit using nor and nand gates ax253 AM290
Contextual Info: Am 3525 Mask-Programmable Gate Array With ECL RAM PRELIMINARY > 3 DISTINCTIVE CHARACTERISTICS Up to 3718 equivalent gates - 416 internal cells - Up to 135 l/O s 1152 bits of ECL RAM 1K with byte-wide parity - Worst case T a a (access time) = 5.5 ns High-performance, low-power ECL gates

AM2001

Abstract: AM223 full adder circuit using nor gates AM2005 AX202 AM2031 AM319 abx2002 full adder circuit using xor and nand gates ax253
Contextual Info: Am 3500 Mask-Programmable ECL G ate Array PRELIM IN ARY > 3 DISTINCTIVE CHARACTERISTICS • • Up to 4988 equivalent gates - 576 internal cells - Up to 134 l/O s H igh-perform ance, low -pow er ECL gates - W orst case Tpcj = 0.6 ns Hi-Speed = 0.7 ns (Medium)

AM3526

Abstract: 2-bit half adder AM312 AM290 AM2019 AM2001 002074
Contextual Info: ADVANCED MICRO D E V I C E S 7b D E j 0ES7SHS OOSOTbM ADVANCED MICRO D E V ICES 5 | 76C ¿ 0 9 6 4 D “¿T -.4-2-11-13 I" Mask-Programmable Gate Array With ECL RAM PRELIMINARY DISTINCTIVE CHARACTERISTICS Up to 3718 equivalent gates - 416 Internal cells - Up to 135 l/O s

AM2019

Abstract: 2-bit half adder layout AX253 AX201 AM2001 AX261
Contextual Info: * Am3525 Mask-Programmable Gate Array With ECL RAM PRELIMINARY > 3 DISTINCTIVE CHARACTERISTICS • • • Up to 3718 equivalent gates - 416 internal cells - Up to 135 l/O s 1152 bits of ECL RAM 1K with byte-wide parity - Worst case T a a (access time) = 5.5 ns

AOX2053

Contextual Info: ADVANC ED MICRO DEVICES 7b D E j 05575.25 0020=177 3 g " 025 7525 ADVANCED MICRO DEVICES r- Am3550 76C 2 0977 T - 4 2 - 1 1 —1 5 Mixed ECL/TTL I/O Mask-Programmable Gate Array PRELIMINARY DISTINCTIVE CHARACTERISTICS Up to 6228 equivalent gates - 576 internal cells

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154