AM005 Search Results

IR 460

Abstract: 0056cn
Contextual Info: Am0056•Am0056C 5MHz Tw o-Phase MOS Clock Driver Distinctive Characteristics • • • • • High speed 5 to 10M Hz depending on load 100% re lia b ility assurance testing in com pliance w ith M IL-STD -883 • Im proved V 0 h compared w ith Am 0026 20ns rise and fall tim es w ith 1000pF load

74047

Abstract: AM005MH2-BI-R
Contextual Info: HiFET High Voltage GaAs FET AM005MH2-BI-R August 2007 v.3 DESCRIPTION AMCOM’s AM005MH2-BI-R is a part of the BI series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power and broadband applications. This part has a

IR 460

Contextual Info: Am0056•Am0056C 5MHz Two-Phase MOS Clock Driver Distinctive Characteristics • • High speed 5 to 10M Hz depending on load 100% re lia b ility assurance testing in compliance w ith M IL-STD-883 • Improved V0H compared w ith Am 0026 • 20ns rise and fall tim es w ith 1000pF load

DS0056CN

Abstract: DS0056J MOS Clock Driver AM0056XC AM0056XM DS0056CH DS0056CJ DS0056H DS0056J/883(SMD)
Contextual Info: Am0056*Am0056C 5MHz Two-Phase MOS Clock Driver Distinctive Characteristics • • • • • 2 0 n s rise and fa ll tim e s w ith 1 0 0 0 p F load 2 0 V o u tp u t voltage sw ing ± 1.5 am ps o u tn u t c u rre n t drive High speed 5 to 1 0 M H z d e p ending on load

Contextual Info: Ceramic Packaged GaAs Power pHEMT AM005WX-BH-R Aug 2010 Rev 0 DC-12GHz DESCRIPTION 200 AMCOM’s AM005WX-BH-R is a discrete GaAs pHEMT that has a total gate width of 0.5mm. It is in a ceramic BH package for operating up to 12GHz. The BH package has all leads bent in a surface mounting style on PC

AM005MH2-BI

Abstract: 1577-11 74047
Contextual Info: AM005MH2-BI HiFET High Voltage GaAs FET February 2004 v.1 DESCRIPTION AMCOM’s AM005MH2-BI is a part of the BI series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power and broadband applications. This part has a

AM005MH2-BI-R

Contextual Info: AM005MH2-BI-R January 2011 REV 5 HiFET High Voltage GaAs FET DESCRIPTION 0.025 AMCOM’s AM005MH2-BI-R is a part of the BI series of GaAs HiFETs. The HiFET is a partially matched patented device configuration for high voltage, high power and broadband applications. This part has a total device

DC-12

Abstract: 4447 surface mounted
Contextual Info: Ceramic Packaged GaAs Power pHEMT AM005WX-BH August 2009 DC-12 GHz Preliminary DESCRIPTION AMCOM’s AM005WX-BH is a discrete GaAs pHEMT that has a total gate width of 0.5mm. It is in a ceramic BH package for operating up to 12 GHz. The BH package has all leads bent in a surface mounting style on PC

SPZB250 USB coordinator

Abstract: 3-axis accelerometer 3 axis Accelerometers for rotation sensing LIS3LV02DL Program zigbee interfacing with pc AN2381 oem accelerometer SPZB250 3-axis Accelerometer filter aircraft storage batteries
Contextual Info: UM0562 User manual SPMB250-A1EVAL demonstration kit user manual and installation guide Introduction The SPMB250-A1 is a ready-to-use wireless acceleration sensor based on a 802.15.4compliant radio transceiver. The integration of two SPMB250-A1 modules together with an 802.15.4 ZigBee -based

AN2381

Abstract: SPZB250 SPZB250 USB coordinator LIS3LV02DL SN250 SPMB250-A1 Introduction to accelerometers
Contextual Info: UM0562 User manual SPMB250-A1EVAL demonstration kit user manual and installation guide Introduction The SPMB250-A1 is a ready-to-use wireless acceleration sensor based on a 802.15.4compliant radio transceiver. The integration of two SPMB250-A1 modules together with an 802.15.4 ZigBee -based

Contextual Info: STAC2942F RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary data Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 21 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European

VK11

Abstract: SPDC12L00010 VL10 15103
Contextual Info: SPDC12L00010 10 A DC-DC converter module Features • Complete switch mode power supply ■ 10 A max output current ■ Input voltage range from 1.8 V to 14 V ■ Supply voltage range from 4.5 V to 14 V ■ Fixed or adjustable output voltage range from to 0.6 V to 5 V

STAC2942B

Abstract: stac2942 FERRITE TOROID R0060
Contextual Info: STAC2942B RF power transistor HF/VHF/UHF N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 21 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European directive

stac2942

Abstract: STAC2942B FERRITE TOROID transistor marking code HF
Contextual Info: STAC2942B RF power transistor HF/VHF/UHF N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 21 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European

Contextual Info: LED7706 6-rows 30 mA LEDs driver with boost regulator for LCD panels backlight Features • ■ Boost section – 4.5 V to 36 V input voltage range – Internal power MOSFET – Internal +5 V LDO for device supply – Up to 36 V output voltage – Constant frequency peak current-mode

Contextual Info: STEVAL-CBL001V1 Demonstration board for power supply and control for LNB based on the microcontrollers ST7LNBx Data Brief Features • Ready-to-use programming and test board with user friendly graphical user interface or windows hyper terminal. ■ EEPROM data programming on-socket or via

POWER MOSFET Rise Time

Abstract: LED7707 GRM31CR71H225KA88B 682MLC data sheet BAS69 LED7706 LED7707TR LPS6235-682MLC VFQFPN-24 ZCD pwm controller
Contextual Info: LED7707 6-rows 85 mA LEDs driver with boost regulator for LCD panels backlight Features • ■ Boost section – 4.5 V to 36 V input voltage range – Internal power MOSFET – Internal +5 V LDO for device supply – Up to 36 V output voltage – Constant frequency peak current-mode

PD0023

Contextual Info: PD0023 Packing information Shipping media for TSSOP8 thin shrink small outline package Introduction The TSSOP8 thin shrink, small outline, surface mount package is supplied in tape and reel packing. The reels are standard 330 mm diameter and contain 4000 devices. The tape used

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

lnb schematic

Abstract: op7 connection lnb schematic diagram diseqc diseqc 1.0
Contextual Info: STEVAL-CBL001V1 Demonstration board for power supply and control for LNB based on the microcontrollers ST7LNBx Data Brief Features • Ready-to-use programming and test board with user friendly graphical user interface or windows hyper terminal. ■ EEPROM data programming on-socket or via

STAC2942F

Abstract: Part Marking ST mosfets marking code 8Ff 17122 RG316-25
Contextual Info: STAC2942F HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 21 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European directive

stac2942

Contextual Info: STAC2942B RF power transistor: HF/VHF/UHF RF power N-channel MOSFETs Datasheet - production data Features • Gold metallization • Excellent thermal stability • Common source push-pull configuration • POUT = 350 W min. with 21 dB gain @ 175 MHz • In compliance with the 2002/95/EC European

STAC2942F

Abstract: FERRITE TOROID 43 toroid core stac2942
Contextual Info: STAC2942F RF power transistor HF/VHF/UHF N-channel MOSFETs Preliminary data Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 21 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European

LED7707

Abstract: 6x6mm BAS69 LED7706 LED7707TR LPS6235-682MLC VFQFPN-24 POWER MOSFET Rise Time
Contextual Info: LED7707 6-rows 85 mA LEDs driver with boost regulator for LCD panels backlight Features • ■ Boost section – 4.5 V to 36 V input voltage range – Internal power MOSFET – Internal +5 V LDO for device supply – Up to 36 V output voltage – Constant frequency peak current-mode