AM 6518 Search Results

BD53A

Abstract: KSA733 KSC1330 KSC945 BD139 BD433 TO92 KSE 13007 L ss8050 sot-23 KSE13009F KSP10
Contextual Info: FUNCTION GUIDE TRANSISTORS 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment “i Package Application FM AM D iff. Amp RM AM P M ix Conv Local Ose IF SOT-23 KSC2223 KSC2223 KSC2223 KSC2715 RF KSC1623 Conv Ose KSC2715 IF KSC2715 10W 20W KSA812/KSC1623

M24308/13-1

Contextual Info: ca_C1-C61.qxd:Layout 1 2/10/11 9:32 AM Page 1 ca_C1-C61.qxd:Layout 1 2/10/11 9:32 AM Page 2 D Subminiature Selector Guide D- Subminiature D Sub C Series D*NM D*H MIL-DTL-24308 Wire Gauge Range AWG AWG 18 - 30 up to AWG 20 AWG 18 - 30 Mating Cycles 500 500

DAMMG7X2PJ

Abstract: M24308/5-38
Contextual Info: ca_C1-C61.qxd:Layout 1 2/10/11 9:32 AM Page 1 ca_C1-C61.qxd:Layout 1 2/10/11 9:32 AM Page 2 D Subminiature Selector Guide D- Subminiature D Sub C Series D*NM D*H MIL-DTL-24308 Wire Gauge Range AWG AWG 18 - 30 up to AWG 20 AWG 18 - 30 Mating Cycles 500 500

STk442-130

Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Contextual Info: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components

AD9834

Abstract: O75M000000L001 EVAL-AD9834EB Centronics 36 pin female connector 2 way terminal block Centronics 14 pin female connector AEL O75M000000L001
Contextual Info: Frumie Friday, Oct 6, 2006 10:11 AM / Evaluation Board for the AD9834 Direct Digital Synthesizer EVAL-AD9834EB Preliminary Technical Data FEATURES Full-featured evaluation board for the AD9834 Various linking options PC software for control of AD9834 On-board patchwork area

4464 ram

Abstract: us4k 74C930 6116 ram 2k 74c920 6508 ram 4464 memory 6164 memory
Contextual Info: In d u s try CMOS RAM C ross R eference H A R R IS C M O S R A M s F U J ID E SC RIPTIO N HARR IS AM O EDI rrsu H IT­ AC H I ID T M ITS U ­ BISHI M OT­ O R O LA N AT­ IO N A L 6508 6508 74C 929 6518 6518 74C 930 NEC O KI H A R R IS / RCA TO SH­ IB A N M O S,

S6518

Abstract: S6518-1
Contextual Info: AM I S6518/S 6518A su p p ly . In a d d itio n , th e S 6 5 1 8 fam ily o ffe rs g u a ra n ­ teed d a ta re te n tio n w ith th e p o w e r sup p ly as low as 2 v olts. T his m ak es th e device an ideal ch o ic e w hen b a tte ry au g m e n ted n o n -v o latile HAM sto ra g e is

im6508

Abstract: im6518 MC146805 6508 intersil HM6508 1024x1 MCM6508 MCM6508-25 MCM6518-25 ICM6518
Contextual Info: MCM6508 MCM6518 ''I -_ 1024 X 1 B IT S T A T IC R A N D O M A C C E S S M E M O R Y The M C M 6508 and M C M 6518 are fu lly s ta tic 1 0 2 4 x 1 R A M s fabricate d using CM O S silicon gate tech n o lo g y. They o ffe r lo w pow er ope ration fro m a single + 5 V supp ly w ith data rete ntio n to 2.0 V - T h e

Contextual Info: MCM6508 MCM6518 H , _ 1024 x 1 BIT STATIC RANDOM ACCESS MEMORY T he M C M 6508 and M C M 6518 are fu lly sta tic 1 02 4x 1 R A M s fabricated using CM O S silicon gate tec h n o lo g y . They o ffe r lo w p ow er o pe ratio n fro m a single + 5 V supp ly w ith data rete ntion to 2.0 V. The

6518

Abstract: 65188 TE-32 HM-6100 HM-6518 HM-6518-5 HM-6518-8 HM-6518-9 HM-6518B-9 6518-9
Contextual Info: HM-6518 jjj H A R R I S 1 024 x 1 CMOS RAM P in o u t Features TOP VIEW • H M -6 1 0 0 C o m p a tib le J siC 1 • L o w S ta n d b y P o w e r . 5 0 jiW Max, EC 2 • L o w O p e r a tin g P o w e r . 2 0 m W /M H z M a x.

am 6518

Contextual Info: HM-6518/883 1024 x 1 CMOS RAM March 1997 Features • Description The HM-6518/883 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation.

epcos SAW ltcc

Abstract: B69893K2457A101 EPCOS SAW Filters zibis ltcc qualcomm 7200 RF LTCC Filter LTCC GHz
Contextual Info: Microwave Ceramics and Modules RF LTCC Filter for ISM 2.4 GHz Filter B69893K2457A101 Preliminary Data Sheet Features • Low Profile maximum height 0.9 mm • High attenuation at GSM (900, 1800, 1900) bands Change History Revision P1 P2 P3 Detail of change

JRC 45600

Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
Contextual Info: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES

DIN IEC 68-2-2

Abstract: SO 273 siemens NTC Siemens 663000 k 1535 k 2749 tag 8414 NTC SIEMENS K 30 mj 14024 M561
Contextual Info: Temperaturmessung Minifühler B57863 S 863 Anwendung ● ● ● ● Klimaanlagen Heizungstechnik Industrieelektronik Kfz Merkmale ● ● ● ● ● ● Kurze Ansprechzeit Genauigkeit 0,2 K zwischen 0 °C und 70 °C Exzellente Langzeitstabilität Kurvenabgeglichener Mehrpunktsensor

triac tag 8518

Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
Contextual Info: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference

smd npn 2n2222

Abstract: bf471 BSR62 equivalent EQUIVALENT TRANSISTOR bc549c transistor bf 175 transistor bc547 PH in metal detector tunnel diode BSY95A BF470 BC200
Contextual Info: SM ALL-SIGNAL TRANSISTORS page Selection guide A udio and general purpose a p p lica tio n s. 5 HF applications.

Contextual Info: HAHRIS H M - 6518/883 1024 x 1 CMOS RAM June 1989 P in o u t Features H M 1 -6 5 1 8/88 3 CERAMIC DIP TOP VIEW • This Circuit is Processed in Accordance to M il-Std-883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Low Power S tand .

Contextual Info: TYPE CGR Computer Grade Aluminum Electrolytic Capacitor FEATURES: m O 33 t> L / Z t> n •Very Low ESR • High Reliability • Very High Ripple Current • -55°C to +105°C Operation The CGR capacitor manufactured by Aero M is specifically designed as a very low ESR, high

6508 RAM

Abstract: 1m x 8 CMOS RAM
Contextual Info: PAGE LOW VOLTAGE DATA RETENTION . 2-2 INDUSTRY CMOS RAM CROSS R EFEREN CE. 2-3 1K CMOS RAM DATA SHEETS

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

C945 p 331

Abstract: 59013 h 331 din 74324 STK 412 770 siemens C1012 thermistor B57045-K471-K B59012 59012 h 331 B59121-B1120-A70 59013 f 331
Contextual Info: Inhaltsverzeichnis Bauformen-Übersicht Seite 5 9 Allgemeine technische Angaben Kaltleiter 27 Kaltleiter-Bauformen 49 Allgemeine technische Angaben (Heißleiter) 177 Heißleiter-Bauformen Normierte R/T-Kennlinien 197 260 Einbauhinweise Qualität Umweltschutzmaßnahmen, Klimatische Hinweise

cen 496

Abstract: ST6400 intel ic 741 2811* intel IMC040FLSP IMC040
Contextual Info: in te i SERIES 2 + FLASH MEMORY CARDS 40 MEGABYTES IMC040FLSP • Single Power Supply Operation ■ Automatically Reconfigures for 3.3V and 5V Systems ■ 200 ns Maximum Access Time with 10 MB/S Read Throughput ■ High Performance Random Writes — 0.85 MB/S Sustained Throughput

Contextual Info: Ceramic FrequencyMixerwide band MCA1T-85+ Level 7 LO Power+7 dBm 2800 to 8500 MHz Maximum Ratings Features Operating Temperature -40°C to 85°C Storage Temperature -40°C to 85°C RF Power 50 mW IF Current 40 mA Permanent damage may occur if any of these limits are exceeded.

Contextual Info: Ceramic FrequencyMixerwide band MCA1T-85+ Level 7 LO Power+7 dBm 2800 to 8500 MHz Maximum Ratings Features Operating Temperature -40°C to 85°C Storage Temperature -40°C to 85°C RF Power 50 mW IF Current 40 mA Permanent damage may occur if any of these limits are exceeded.