ALJP Search Results

HB56D136

Abstract: hb56d136bv-7b
Contextual Info: HB56D136 Series 1,048,576-word x 36-bit High Density Dynamic RAM Module The HB56D136 is a 1M × 36 dynamic RAM module, mounted 8 pieces of 4-Mbit DRAM HM514400BS/BLS sealed in SOJ package and 4 pieces of 1-Mbit DRAM (HM511000AJP/ALJP) sealed in SOJ package. An outline of the

Contextual Info: HM511000ALP/ALJP/ALZP-8/10/12 •Preliminary 1,048,576-Word x 1-Bit Dynamic Random Access Memory ■ DESCRIPTION The Hitachi HM511000ALP/ALJP/ALZP family is a CMOS dy­ namic RAM organized 1,048,576 word x 1-bit. HM511000ALP/ ALJP/ALZP has realized higher density, higher performance and

514256ALP

Abstract: HM514256A hm514256 HM514256ALP-8
Contextual Info: HM514256ALP/ALJP/ALZP-8/10/12 — Preliminary 262,144-Word x 4-Bit Dynamic Random Access Memory • DESCRIPTION The Hitachi HM514256ALP/AUP/ALZP family is a CMOS dy­ namic RAM organized 262,144-word x 4-bit. HM514256ALP/AUP/ ALZP has realized higher density, higher performance and various

HM511000

Abstract: hb56g19b-7
Contextual Info: HB56G19A/B Series Maintenance only 1,048,576-word x 9-bit High Density Dynamic RAM Module The HB56G19 is a 1M × 9 dynamic RAM module, mounted two 4-Mbit DRAM HM514400BS/BLS sealed in SOJ package and 1 Mbit DRAM (HM511000 AJP/ALJP) sealed in SOJ package. An outline of the HB56G19 is 30pin single in-line package. Therefore, the

511000a

Contextual Info: HM511000ALP/ALJP/ALZP-8/10/12 — Preliminary 1,048,576-Word x 1-Bit Dynamic Random Access Memory • DESCRIPTION The Hitachi HM511000ALP/AUP/ALZP family is a CMOS dy­ namic RAM organized 1,048,576 word x 1-bit. HM511000ALP/ ALJP/ALZP has realized higher density, higher performance and

WFA105K

Contextual Info: T H I R DA N G L EP R O J E C T I O N ITEM CODE ECWF2W104RKA 1 2W124RKA 1 1 2W154RKA 1 2W184RKA 1 1 2W224RKA H 2W274RKA 1 2W334RKA 1 1 2W394RKA 1 2W474RKA CAP F * L 104) 13 O .1 ( .0 1 O . 12 ( 124) 1 1 O . 15 ( 154) 1 O . 18 ( 184) 1 0.22 (224) 0.27 (274)

Contextual Info: HM624256A Series 262144-word x 4-bit High Speed CMOS Static RAM HITACHI Rev. 0.0 Dec. 1, 1995 Description The Hitachi HM624256A is a high speed 1M Static RAM organized as 262,144-word x 4-bit. It realizes high speed access time 20/25/35 ns and low power consumption, employing CMOS process technology

hitachi hn27c256

Abstract: hm514280 256K RAM HM62256 1M x 16-Bit x 4 Banks synchronous sRAM BLS 16K-X hitachi HM6264 Hitachi 32k static RAM 16M x8 55ns 72 pin flash dimm sop-40 16-bit hm6264 application note
Contextual Info: HITACHI Memory Devices CONTENTS • • • • VOLATILE - Dynamic RAM •Fast Page Mode •EDO •Synchronous - Dynamic RAM Modules - Static RAM 10 NON VOLATILE - EPROM - EEPROM / Flash - MaskROM 12 14 15 2 APPLICATION SPECIFIC - Video RAM - FIFO / LINE / Frame RAM /

rca thyristor manual

Abstract: HN623258 101490
Contextual Info: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j

1W HB LED

Abstract: FLUID W8 w2v6 CDM4
Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER L C D REV. A — 6,10 [0 ,2 4 0 ] 2,80 [0,110] MAX, J 6 .5 0 [0 ,2 5 6 ] n 0,30 [0,012] EPEIXY. 1,93 [0 ,0 7 6 ] — H 3 0 2 M 3 2 T F — 1 W A NUMBER AND REVISION COMMENTS DATE E.C.N. # 1 1 1 4 6 . / 6,6 7 [0 ,2 6 3 ] — I

Contextual Info: 6 / 3 5 © i F © © ln © © ^ Q O E E D D > i!3 NOTES? , am / c a t s * MATERIAL PLATING i 'O V 'j '7 -. l c p cshteiut7- ) , /© a * • 9 - 5 4 IL TERMIAL 6 , U L 9 4 V - 0 HOUSING:LCP LIQUID CRYSTAL POLYMER), GLASS RILLED,WHITE,UL94V-0 5 - = 4 j l : s ® #

m514256a

Contextual Info: HM514256A/AL Series 262,144-Word x 4-Bit CM O S Dynamic RAM • DESCRIPTION HM514256A/ALP Series The Hitachi HM 514256A/AL is a C M O S dynamic RAM organized 262,144-word x 4-bit. HM 514256A/AL has realized higher density, higher performance and various functions by employing 1.3 jj.m C M O S technology and some new C M O S circuit de­

Contextual Info: HM621100A Series 1048576-word x 1-bit High Speed CMOS Static RAM HITACHI Rev. 0.0 Dec. 1, 1995 Description The Hitachi HM621100A is a high speed 1M Static RAM organized as 1048576-word X 1-bit. It realizes high speed access time 20/25/35 ns and low power consumption, employing CMOS process technology

HM514400

Contextual Info: blE ]> • 4 4 T b 20 3 □ D 2 3 b D 3 Eb4 ■ H I T S HB56D136 Series -HITACHI/ LOGIC/ARRAYS/MEM 1,048,576-Word x 36-Bit High Density Dynamic RAM Module T h e H B 5 6 D 1 3 6 is a 1M x 3 6 d y n a m ic R A M m o d u le , m o u n te d 8 p ie c e s o f 4 -M b it D R A M

HM621100A

Abstract: HM621100AJP-20 HM621100AJP-25 HM621100AJP-35 HM621100ALP-20 HM621100ALP-25 HM621100ALP-35 HM621100AP-20 HM621100AP-25 HM621100AP-35
Contextual Info: HM621100A Series 1048576-word x 1-bit High Speed CMOS Static RAM Description The Hitachi HM621100A is a high speed 1M Static RAM organized as 1048576-word × 1-bit. It realizes high speed access time 20/25/35 ns and low power consumption, employing CMOS process technology and

TNY 176 PN EQUIVALENT

Abstract: AY-5-8100 TFK 7 segment displays AY5-8100 7-segment display tfk FTC S211 TNY 177 PN EQUIVALENT saa1130 TNY 176 PN AY-3-8500
Contextual Info: 1977 DATA CATALOG f m ELECTRONICS G E N E R A L I N S T R U M E N T C O R P O R A T I O N » M IC R O E L E C T R O N I C S r I' i i INDEX/GENERAL INFORMATION. CALCULATORS. CLOCKS.

Sensotec

Abstract: ALJP
Contextual Info: Model AL-JP High Output Load Cell DESCRIPTION Model AL-JP is a high output load cell 30 mV/V minimum . performance in non-linearity, hysteresis, and repeatability. Low These semiconductor strain gage load cells are engineered to mechanical deflection allows for better response capability.

PT06A-10-6S BENDIX

Abstract: bendix BD141 Sensotec tje rj50 to usb BL805 PT06A BENDIX BENDIX pt06 AS19G ms3106
Contextual Info: TEDS-Enabled Cable Assemblies Test & Measurement Sensors DESCRIPTION Honeywell provides a wide range of accessories for our test If you don’t see exactly what you need listed below, or have and measurement sensor products, which are designed to meet special requirements for your particular application or operating

388F

Contextual Info: ADSP-2171 November 1993 For current information contact Analog Devices at 617 461-3881 ADSP-2171 DSP Microc FEATURES • 30 ns Instruction Cycle Time from 16.67 MHz Crystal <1 5.0 Volts • 33 MIPS Sustained Performance • ADSP-2100 Family Code & Function Compatible with

HM6*ALJP-35

Abstract: HM624256ALP-20 HM624256ALP-35 HM624256AP-20 HM624256AP-25 HM624256AP-35 HM624256A HM624256AJP-20 HM624256AJP-25 HM624256AJP-35
Contextual Info: HM624256A Series 262144-word x 4-bit High Speed CMOS Static RAM Rev. 0.0 Dec. 1, 1995 Description The Hitachi HM624256A is a high speed 1M Static RAM organized as 262,144-word × 4-bit. It realizes high speed access time 20/25/35 ns and low power consumption, employing CMOS process technology

HM621100AP-35

Abstract: HM621100A HM621100AJP-20 HM621100AJP-25 HM621100AJP-35 HM621100ALP-20 HM621100ALP-25 HM621100ALP-35 HM621100AP-20 HM621100AP-25
Contextual Info: HM621100A Series 1048576-word x 1-bit High Speed CMOS Static RAM Rev. 0.0 Dec. 1, 1995 Description The Hitachi HM621100A is a high speed 1M Static RAM organized as 1048576-word × 1bit. It realizes high speed access time 20/25/35 ns and low power consumption, employing

Lebow Model 7541

Abstract: Sensotec sensotec tje sensotec pressure transducer Sensotec pressure transducer tje Sensotec pressure transducer FPG sensotec model 41 load cell Sensotec transducer QFFH-9 pressure transducer ap141
Contextual Info: Cables and Mating Connectors Test & Measurement Sensors DESCRIPTION Cable assemblies and mating connectors for Honeywell’s with Honeywell cable assemblies. This datasheet and website pressure, load and torque catalog products are offered through configurator will help determine the proper cable assembly for

HM514280AJ7

Abstract: m514280 hm514280 HM514280AJ8 HM514280AZ8 hm514280altt HM514280ALJ8 hm514280aj M514 HM514280AL
Contextual Info: H M 5 1 4 2 8 0 A /A L S e rie s Preliminary H M 5 1 S 4 2 8 0 A /A L S e rie s 262,144-word x 18-bit Dynamic Random Access Memory HITACHI The Hitachi HM514280A/AL are CMOS dynamic RAM organ ized as 2 6 2 ,1 4 4 -w o r d x 1 8 -b ii. H M 514280A /A L have realized higher density,

Contextual Info: HM624256A Series 262144-word x 4-bit High Speed CMOS Static RAM HITACHI Description The Hitachi HM624256A is a high speed 1M Static RAM organized as 262,144-word x 4-bit. It realizes high speed access time 20/25/35 ns and low power consumption, employing CMOS process technology and high