AL 1450 DV Search Results

AL 1450 DV

Abstract: CTC-05
Contextual Info: International i“ R Rectifier J -y .o b b D IRC634 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Current Sense Fast Switching Ease of Paralleling Simple Drive Requirements V DSS= 2 5 0 V ^DS on = 0 .4 5 Q l D = 8.1 A

AL 1450 DV

Contextual Info: PD-9.565 B International !k Rectifier IRC630 HEXFET® P o w e r M O S F E T Dynam ic dv/dt Rating Repetitive Avalanche Rated Current Sense Fast Switching Ease of Paralleling Simple Drive Requirem ents V dss - 2 0 0 V ^D S o n - 0 . 4 0 0 lD = 9 .0 A Description

al 1450 dv

Contextual Info: PD-9.567B International e Rectifier IRC730 HEXFET® P ow er M O SFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Current Sense Fast Switching Ease of Paralleling Simple Drive Requirements V dss - 400V R DS on = 1 0 Q lD = 5.5A

marking M5D

Abstract: IRC530 RC530 ScansUX1007 ww1 sd
Contextual Info: PD-9.454D International k 1Rectifier IRC530 HEXFET® Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Current Sense 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements ^D S S ~ 1 0 0 V R DS{on = 0 . 1 6 0

BD 135 transistor

Abstract: zt173
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA A dvance Information The RF Line MRF15090 NPN Silicon RF Power Transistor D e sig n e d fo r 2 6 vo lts m icro w a ve la rg e -s ig n a l, c o m m o n em itter, cla s s A and c la s s A B lin e a r a m p lifie r a p p lic a tio n s in in d u s tria l a n d c o m m e rc ia l F M /A M

thyristor code

Abstract: R400CH 60598-1 10KHZ R180CHX R185CHX R190CHX R200CHX R210CHX R216CHX
Contextual Info: WESTCODE SEMICONDUCTORS 3TE ] Westcode “D ” and “ R ” series of fast-switching thyristors have a regenerative interdigitated gate structure to ensure low switching losses and high di/dt performance. Low reverse recovery charge values, combined with the

APT-6018

Abstract: APT6018JN
Contextual Info: A dvanced P ow er Te c h n o l o g y O D O APT6015JN APT6018JN S ISOTOP* 600V 600V 38.0A 0.15Q 35.0A 0.180 S U "UL Recognized" File No. E145592 S POWER MOS IV< SINGLE DIE ISOTOP PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS

IRC530-007

Abstract: IRC530 international rectifier GTO 2A38 IRC630 IRC531 IRF531 IRC530-008 DIODE EG 83A I-10A
Contextual Info: HE D I MflSS4Sa GGDfliGM 3 | Data Sheet No. PD-9.454C T ? tz < / INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE AND dv/dt RATED* LOWER ON STATE RESISTANCE, 175°C OPERATING TEMPERATURE HEXSense —Current; Sense IRC530 C Series

Contextual Info: pr a d v a n c e d P ow er ifl T e c h n o l o g y R F W. A 1214 300 - 300 W atts - 50 Volts, lOOjas, 10% R adar 1 2 0 0 - 1400 M H z GENERAL DESCRIPTION T he 1214-300 is an internally m atched, C O M M O N B A SE tran sisto r capable o f pro v id in g 300 W atts o f p u lsed RF o utput pow er at one hundred

Contextual Info: APT8015JVFR A dvanced W Æ P ow er Te c h n o l o g y 7 0.1500 soov 44a POWER MOSV i FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

CLC520AJP

Contextual Info: c Amplifier with Voltage Controlled Gain, MXMmp APPLICATIONS: FEATURES typical : • • • • • • • • • • • • wide-bandwidth AGC systems automatic signal-leveling video signal processing voltage controlled filters differential amplifier

IRC830

Abstract: AL 1450 DV
Contextual Info: P D -9.455D International i«R Rectifier IRC830 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Current Sense Fast Switching Ease of Paralleling Simple Drive Requirements V DSS= 5 0 0 V R DS on = 1 -5 ^ l D = 4 .5 A

AL 1450 DV

Abstract: 132-gd 132 gd 120
Contextual Info: SEMIKRON SKiiP 132 GD 120 • 318 CTV Absolute Maximum Ratings Sym bol |c o n d itio n s 1> Values Units 1200 V IGBT & Inverse Diode VcES SKiiPPACK SK integrated intelligent Power PACK 3-phase bridge SKiiP 132 GD 120 + Driver 318 CTV 713 V cc 9> O perating D C link voltage

skiip 23 ac 128 t2

Abstract: skiip 23 ac 128 t 2
Contextual Info: SEMIKRON SKiiP 192 GPL 170 - 475 CTV Absolute Maximum Ratings Sym bol |c o n d itio n s 1> Values Units 170 0 V IGBT & Inverse Diode VcES V c c 9> O perating DC link voltage lc Theatsink —25 °C Tj 3> IGBT & Diode Visol 4> AC, 1 min. If I fm 1200 V 150 A

Contextual Info: _ 9097250 TOSHIBA D I S C R E T E /O P T O 39C~ 0 2 2 8 0 PHASE CONTROL THYRISTOR 3T TOSHIBA {D ISCRETE/OPTO} ' 1600V 1 5 0 A De | T O ^ S G D 7^ 55'-./e? DGDEBflD I:. I SFÍ50U13 MAXIMUM RATINGS RATING UNIT 800 1000 V drm 1200 V and 1300 V rrm 1600 960

PG-DSO-20

Abstract: a1807 PTFA211801E H-32259-2 lt 860 PTFA071701GL ptfa072401fl 1800 ldmos 1805-1880 PTMA210452M
Contextual Info: Never stop thinking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S state-of-the-art LDMOS technology, high-volume manufacturing facilities and fully-automated production assembly and test

AL 1450 DV

Contextual Info: SEMIKRON SKiiP 232 GPL 1 2 0 -4 1 0 CTV E/A Absolute Maximum Ratings Sym bol |c o n d itio n s 1> Values Units 1200 V IGBT & Inverse Diode VcES Vcc 9> O perating DC link voltage 900 V lc T h ea tsink — 25 200 A °C IGBT & Diode Tj 3> 40 . + 150 AC, 1 min.

2kva ups circuit diagram

Contextual Info: vacon nxp/c ac drives user manual vacon • 1 TABLE OF CONTENTS Document ID: DPD00890B Revision release date: 9.10.2014 1. SAFETY .4 1.1 1.2 1.3

ja02

Abstract: JA-02
Contextual Info: 6-Pack IGBT 1200 V 8A F U JI IGBT MODULE L series Outline Drawings • Features 2-<6f5.4 • High Sp e e d Sw itch in g • Low Saturation Voltage • Voltage Drive ■ Applications i mi m in « > [. i • Inverter for Motor Drive e k • A C and DC S e r v o D rive A m p lifier

ds52001

Contextual Info: Amplifier with Voltage Controlled Gain, AGQAmp APPLICATIONS: FEATURES typical : • • • • • • • • • • • • wide-bandwidth AGC systems automatic signal-leveling video signal processing voltage controlled filters differential amplifier

40w inverter circuit

Abstract: 333C ST333C AL 1450 DV sine wave inverter source code
Contextual Info: ST333CPbF Series Vishay High Power Products Inverter Grade Thyristors Hockey PUK Version , 720 A FEATURES • • • • • • • • • • • TO-200AB (E-PUK) Metal case with ceramic insulator All diffused design Center amplifying gate Guaranteed high dv/dt

Contextual Info: Bulletin I25238 10/06 ST333CPbF SERIES INVERTER GRADE THYRISTORS Hockey Puk Version Features Metal case with ceramic insulator International standard case TO-200AB E-PUK 720A All diffused design Center amplifying gate Guaranteed high dV/dt Guaranteed high dI/dt

AL 1450 DV

Contextual Info: SEMIKRON S K iiP P A C K S K iiP 132 G P L 1 2 0 - 4 1 2 C TV E/A A b so lu te M ax im u m R atings Sym bol |c o n d itio n s 1> Values U n its 1200 V 900 V 3-p h a s e b ridg e IGBT & Inverse Diode V cE S V c c 9> O perating DC link voltage lc T h ea tsink

OA7 diode

Abstract: AL 1450 DV
Contextual Info: Data Sheet No. PD-9.877 INTERNATIONAL RECTIFIER I« R AVALANCHE ENERGY RATED AND dv/dt RATED HEXFET TRANSISTOR 60 Volt, 0.017 Ohm HEXFET IRFV064 Product Summary Part Number The HEXFET® technology is the key to International Rectifier's advanced line of power M O S FE T transistors.