AK 1231 Search Results

T305

Abstract: dissipator C795 C795CA C795CB C795CP C795LN C795LT SF1154
Contextual Info: C795 100mm THYRIST OR PRESSP THYRISTOR PRESSPA AK 3200V / 3800A Type C795 thyristor is suitable for phase control applications such as high voltage valves used on static Var compensators and thyristor controlled series compensation. It is especially optimized to handle frequently applied heavy

Contextual Info: C795 100mm THYRIST AK OR PRESSP PRESSPA THYRISTOR 3200V / 3800A Type C795 thyristor is suitable for phase control applications such as high voltage valves used on static Var compensators and thyristor controlled series compensation. It is especially optimized to handle frequently applied heavy

BURN GI CONDUIT

Abstract: T4F8R10K9 PR4410-18A dynamic braking unit schematic diagram DRIVES-IN001A-EN-P T10F4R5K36 rockwell inverter T4F8R19K2 PF3F3R21K4 PF9F2R1K20
Contextual Info: AK DBU Dynamic Braking Unit 600/690 VAC User Manual Important User Information Solid state equipment has operational characteristics differing from those of electromechanical equipment. “Safety Guidelines for the Application, Installation and Maintenance of Solid State Controls” Publication SGI-1.1 available from

d880

Contextual Info: flñD D • flS3Sfc.0S O O m ^ a b <1 « S I E G 88D 14936 D . f * BUZ 220 SIEMENS AK TI EN GE SE LLS C HA F Main ratings N-Channel Draln-source voltage Continuous drain current Draln-source on-reslstance Description Case Vos ^DS Ofl 800 V 6.5 A 1.5 í l

Contextual Info: Preliminary User’s Manual TM TM V850ES/SA2 , V850ES/SA3 32-Bit Single-Chip Microcontrollers Hardware V850ES/SA2: µPD703201 µPD703201Y µPD70F3201 µPD70F3201Y V850ES/SA3: µPD703204 µPD703204Y µPD70F3204 µPD70F3204Y Document No. U15905EJ1V0UD00 1st edition

IFS100B12N3E4

Abstract: C5363 IFS100B12N3E4B
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules IFS100B12N3E4_B31 MIPAQ base Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und Strommesswiderstand MIPAQ™base module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and current

Contextual Info: 23456784539A6BCDEF7C699345674F976BCDEF7C6 A2C3 A2EC38 1 A9C9E792D364538C 9A2969!E73D9"C6DC399#7C3 A9EC39$7592D3645738C 9A29F69!E73D9"C6DC3997C3 !C2"#36$436%61234286544

mitsumi dc motor r-14

Abstract: QD141X1LH03 south bridge SIS 968 samsung crt monitor 56v circuit diagram SDR-081 F3437 mitac 8 diode S4 68a resistor 56E R87 motherboard mPGA478 circuit
Contextual Info: SERVICE MANUAL FOR 8575 BY: Sissel Diao TESTING TESTING TECHNOLOGY TECHNOLOGY DEPARTMENT DEPARTMENT // TSSC TSSC Jun. 2002 8575 N/B Maintenance Contents 1. Hardware Engineering Specification …………………………………………………………………

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules BSM200GA120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values

QRB1134

Abstract: QRB1133 LF 833
Contextual Info: REFLECTIVE OBJECT SENSORS OPTOELECTRONICS QRB1133/1134 DESCRIPTION PACKAGE DIMENSIONS — .328 8.33 .420 (1 0.6 7)— Th e QRB1133/1134 consists of an infrared emitting diode and an NPN silicon phototransistor m ounted side by side on a converging optical axis in a black plastic housing.

0PB704W

Abstract: OPB703W QPB704W QPB704 diameter lens phototransistor OPB704W OPB705W QPB705W Scans-0014018
Contextual Info: REFLECTIVE OBJECT SENSORS OPTOELECTRONICS OPB703W/OPB704W/OPB7Q5W PACKAGE DIMENSIONS The OPB703W, OPB704W, and OPB705W consist of an infrared emitting diode and an NPN silicon phototransistor mounted side by side on a converging optical axis in a black plastic housing. The

ckr06 ceramic capacitor

Abstract: DIN 40040 k 1356
Contextual Info: EIN UNTERNEHMEN VON Keramik-Kondensatoren für die professionelle Elektronik Ceramic Capacitors for professional electronics Roederstein Keramische Vielschichtkondensatoren in radialer Ausführung, Klasse 2, nach MIL-C-39014/02 Ceramic multilayer capacitors with radial leads, class 2

C67078-A1103-A2

Abstract: V103 DIN 41872 kbs 005
Contextual Info: s a t D • 823ShO S 1 001413b sao 14936 O H S IE 6 BUZao r-s y -1 3 SIEMENS A K TI EN GE SE LL SCH AF Main ratings N-Channel Draln-source voltage Voa Continuous drain current Draln-source on-reslstance ^DS Ofl Description Case 800 V 6.5 A 1.5 í l FREDET with fast-recovery reverse diode, N-channel, enhancement mode

Contextual Info: E1N UNTERNEHMEN VON Keramik-Kondensatoren fur die professioneile Elektronik Ceramic Capacitors for professional electronics Roederstein Keram ische Vielschichtkondensatoren in radialer Ausfiihrung, Klasse 2, nach M IL-C -39014/02 C eram ic m ultilayer capacitors w ith radial leads, class 2

Contextual Info: EIN UNTERNEHMEN VON Roederstein Keramik-Kondensatoren fur die professionelle Eiektronik Ceramic Capacitors for professional electronics Keram ische Vielschichtkondensatonen in radialer Ausfuhrung, Klasse 2, nach M IL -C -39 014/01 C eram ic m ultilayer capacitors w ith radial leads, class 2,

K1231

Abstract: SK1232
Contextual Info: blE D 2 S K 1 2 3 1 • , 2 DD132b5 ÖM4 ■ H I T M S K 1 2 3 2 - HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING ■ FEATURES • Low On-Resistance • High Speed Switching • • • Low Drive Current No Secondary Breakdown

ILI 5960

Abstract: GI 9047 6159W 6146w NUTV
Contextual Info: MIL-E-1,'1502A 15 ~Jnuary 197] SUPERSEDU'NG MIL-E-1/1502 II July 1963 MILITARY SPECIFICATION SHEET ELECTRON TUBES. TRANSMITTING TYPES 6 146W AND 6159W 1/ Thle coniplete ~hai ~consist requirements for procuring the electron tubes described herein MIL-~E-1 laes issue of Specification

Contextual Info: / ' ^ 5 - o s -~o 3 EIN UNTERNEHMEN VON Keramik-Kondensatoren fur die professionelle Elektronik Ceram ic Capacitors for professional electronics Roederstein Keramische Vielschichtkondensatoren in radialer Ausfuhrung, Klasse 2, nach MIL-C-39014/01 Ceramic multilayer capacitors with radial leads, class 2,

Contextual Info: 4SE D ISOCOM COMPONENTS LTD • MôfibSlD ÜD0030E Q B I S O MOC 8100X ' Wfc*mms*»?hw crv •?v t ^ .’îîäfl'^1- M i ï 1 * 3 1' v ?:!'■■vc*i ^ :"'-I-.':.!!hJ - ^ € Jr " iJ'-aHlaV M dfti'i '■’Üil5>»iyiyrf'iîi, w’1,^ m - n % æ >frf C J^Iya- y*:

2SK1823-01R

Abstract: H100
Contextual Info: 2SK1823-01R FUJI P O W E R M O S - F E T N-CHAN NEL SILICON POWER MOS-FET p- « ^ - FAP-IIIA SERIES • Features TITÄ Outline Drawings • High current • -ow on-resistance • slo secondary breakdown • .ow driving power • High forward Transconductance

k6a65

Contextual Info: 23456784539A6BCDEF7C699345674F976BCDEF7C6 1 A9C9E79845633E92D364538C 9A!2969E73D9"C6DC399#7C3 A9EC39$759BF892D3645738C 9A!29F69E73D9"C6DC3997C3 "C2#$36%436&61234286544 "' 6*6 "

Contextual Info: HN27C301P/FP Series— 131072-word x 8-bit CMOS One Time Electrically Programmable ROM The HN27C301P Series are 131072-word x 8-bit one time electrically programmable ROM. Initially, all bits of the HN27C301P/FP Series are in the " 1 " state output high .

hp 30d8

Abstract: narrow bandpass switched capacitor filter ic
Contextual Info: A/VX- COM, INC. V DATA BULLETIN MX336 Preliminary Hay 1986 Audio/Sub-Audio Filter Array FEATURES * * High Order 300Hz Highpass Filter Low Group Delay 2550Hz Lowpass Filter On-Chip 120-175Hz Bandpass Uncommitted Op Amp and Analog Switch AUDIO l/P Typical 50dB Rejection Below

813S

Abstract: L-93WEYC L-93WEYW L-93WEGC L-93w L-813SR
Contextual Info: Kingbright 10mm SUPER BRIGHT BIG LAMPS L-813SR SUPER BRIGHT RED Features Package Dimensions •ULTRA BRIGHTNESS. • 10mm DIAMETER BIG LAMP. •W ID E VIEWING ANGLE. • I.C. COMPATIBLE. • BOTH DIFFUSED AND WATER CLEAR LENS ARE AVAILABLE. • RELIABLE AND RUGGED.