AJLJ Search Results

Contextual Info: SA5.0 THRU SEM ICONDUCTOR TECHNICAL DATA FORWARDBTIERNATONAI ELECIKQNK&LID. SA170CA TECHNICAL SPECIFICATIONS O F TRANSIENT VOLTAGE S U P P R E S S O R VOLTAGE RANGE - 5.0 to 170 Volts PEAK PULSE POWER - 500 Watts FEATURES * Glass passivated junction T 500 Watts Peak Pulse Power capability on

ajlj

Abstract: L826-1E4M-P5
Contextual Info: THE INFORMATION CONTAINED HEREIN IS CONSIDERED 'PROPRIETARY' TO DEL FUSE INC. AND SHALL NOT DE COPIED, REPRODUCED OR DISCLOSED WITHOUT THE WRITTEN APPROVAL OF DEL FUSE INC. LEDI PDLARITY PIN 13 PIN 14 CDLDR + GREEN - RoHS 2002/95/EC LED2 POLARITY PIN 15 PIN 16 CDLDR

Contextual Info: THIRD AMOLE M E T R I C SCALE DIMENSIONS IN mm # £ 3 NO TES. A TO DETERMÍNEDIMENSIONS TAKE 2 x N = NR. OF POS. FOR EXAMPLE: 2x10 POS. N x 2,54 =25.4 mm. FOR ORDERNR. USE OASIC NR. + NR. OF POS. FOR E X A M P L E . ^ 54 2 , Ieüh r tn Ifiar m / Bi mi HtH

2n11

Abstract: 2N1052 2N1053 2N1054 2N1055 2N1116 2N1117 2N1420 2N910 2N911
Contextual Info: CENTRAL SEMICONDUCTOR _1 9 8 9 9 6 3 CENTRAL SEMICONDUCTOR ti DE J n ñ n b 3 0 0 0 0 2 1 5 □ J f * 6 1 C 0 0 2 1 5 T >3 $ - ó ¡ NPN - METAL CAN - SWITCHING AND GENERAL PURPOSE Cont'd. VCB VCE Veb V V V min hFE at *c VC E max mA V V 10 10 . 10

K174YH7

Abstract: k2651 K159HT1 TBA120 k157 tba810 K159 K174YP1 K798 K140y
Contextual Info: HHTETPAJlbHblE MMKPOCXEMbI T om III 5 CCCP MOCKBA K a T a j i o r „ M H T e r p a jib H b ie M H K p o c x e M b i“ conep>KHT TexHM HeCKHe X a p ü K T e p H C T H K M H H T e r p a jlb H b lX M M K p o e x e M , KOT o p b ie 3 K c n o p T n p y e T C o b c t c k h h

BTI ML-1 94V-0

Abstract: 94V-0 BTI ML-1 TRANSISTOR SMD MARKING CODE ALG horizontal transistor tt 2206 smd transistor marking 44s MEC 1300 nu ALG B7 smd transistor transistor horizontal tt 2206 jj-02 94v-0 gm 5766 lf
Contextual Info: A F C T A B L E \_ J/i \L -\S lH Y iiK C O H N E C T iO N o f c o n t e n t s PRODUCT LINE SERIES NUMBERS SP E C fW JSn S TABLE OF CONTENTS .I~ IV OPEN FRAME SOCKETS

KS0086

Contextual Info: PRELIMINARY 80CH COM/SEG DRIVER FOR DOT MATRIX LCD KS0086 INTRODUCTION 100QFP The KS0086 is a LCD driver LSI which is fabricated by low power CMOS high voltage process technology. In case of segment driver, it can be interfaced as 1-bit serial or 4-bit parallel by controller. In case of common

Contextual Info: DALLAS SEMICONDUCTOR DS2180A T1 Transceiver FEATURES PIN ASSIGNMENT • Single chip DS1 rate transceiver • Supports common framing standards - 12 frames/superframe “193S” - 24 frames/superframe “193E” • Three zero suppression modes - B7 stuffing

lts 543 pin configuration

Abstract: lts 543 pin diagram lts 543 series pin diagram AUK 534 lts 542 pin diagram LTS 543 dmo 565 r lts 543 data sheet AUK 548 lts 542
Contextual Info: Philips Semiconductors Preliminary specification Drive processor for DCC systems SAA3323 FEATURES fD IG IT A L • Operating supply voltage: 2.7 to 3.6 V croc: • Low power dissipation: 84 mW typ • Single chip digital equalizer, tape formatting and error

DRAM "deep trench" capacitor

Contextual Info: ».ISrtM IJ*. l.'VlALllf- r tr r U L n ttJ IU H S M E M O R IE S Johann Hanw * WcJf Henkel * KjrMwtrct Hwnlngr The 64M-bit DRAM: A Ä m f i A U . , , « rl r iI tM^ lr rI il ui i tr wy l u : « rW' ll iI iI £nJ hF r « - - I - l— - m i im m I \ J I L I IV /

2N4248

Abstract: 2N4249 2N4250 2N4250A 2N4389 2N5055 2N5140 2N5141 2N5228 2N5910
Contextual Info: bl SEMICONDUCTOR 2N4389 2N5055 2N5140 2N5141 2N5228 2N5910 V CB V CE V EB hFE at le VCE V V V min ma mA V V 15 12 5 6 5 20 12 12 5 6 5 20 6 4 4 4 3 4 30 30 20 30 30 30 180 100 140 10 30 10 30 10 10 5 0.5 1.0 2 5 5 0.15 0.45 0.75 0.6 0.4 0.15 — — 120 c

2SJ167

Abstract: 2SK1061
Contextual Info: TOSHIBA 2SK1061 T O SH IB A FIELD EFFECT T R A N SIST O R SILICO N N C H A N N E L M O S TYPE 2 S K 1 061 Unit in mm HIGH SPEED SW IT C H IN G A PP LIC A T IO N S A N A L O G SW ITCH A PP LIC A T IO N S 4.2MAX. INTERFACE A PP LIC A T IO N S Excellent Switching Times

Contextual Info: REVISIONS SYM ZONE ECN, ERN NO. B DATE 0 2 /0 3 /0 5 PROPOSAL APPRD. C.B. THIS IS A CAD DRAWING. DO NOT MANUALLY REVISE. • CONTACT FINISH/GOLD THICKNESS NO DIGIT=STANDARD 15 MICROINCHES [0 .3 8 MICRONS] GOLD G = 5 0 MICROINCHES [1 .2 7 MICRONS] GOLD ORDERING CODE:

NJL5171K

Abstract: C07S
Contextual Info: C3H3 NJL5171K/71K F W A i t i t i <nm9\-LE0£ N JL5 17 1 K / 7 1 K F l i , ? S lS JfO T S i 7 * ì : h ' > > í O L " f > 7 -í > < 7 S 'J 'g í • Í S > t S Í 7 * t- V 7 L ' ^ í ’ T -T o & • ^ S / J ' fSl;! * ¡SíiW ’í 1- 1 . 6 5 m m X 2 . 6 m m X 4 . 4 m m )

Contextual Info: S C IE N T IF IC / M IN I-C IR C U IT S 4 TE D • flQ b flflll DOD1 4 7 R 2 1 2 * S C C broadband, high dynamic range Frequ ncy Mix©rs # TUF-860MH LEV EL 13 +13 dBm LO, up to +9 dBm RF T -7 4 -0 9 -0 1 computer-automated perform ance data typical production unit

Contextual Info: KM4 13 2 G 2 7 1 ELECTRONICS Graphic Memo ry 128K x32B itx2B ank Synchronous Graphic RAM FEATURES GENERAL DESCRIPTION • • • • The KM4132G271 is 8,388,608 bits synchronous high data rate Dynamic RAM organized as 2 x 131,072 words by 32 bits, fabricated with SAMSUNG’S high performance

X2816

Abstract: 6502 CPU architecture block diagram TF 6221 HEN LED display rm65 Seiki STP H 200 R6530 hall marking code A04 vacuum tube applications data book National Semiconductor Linear Data Book Futaba 9 bt 26
Contextual Info: $5.00 1984 DATA B O O K Second Edition Rockwell International Semiconductor Products Division Rockwell International Corporation 1984 All Rights Reserved Printed in U.S.A. Order No. 1 March, 1984 Rockwell Semiconductor Products Division is headquartered in Newport Beach,