AJ V SOT23 Search Results

E101 FET

Abstract: c681 FET FET C681 50P3P U320 FET 2SK160 NEC u320 motorola KE4859 Z3M g BFS21A
Contextual Info: JUNCTION FET Item Number Part Number Manufacturer V BR GSS loss Uta VaS(Off) lass elsa Max (Vl (AJ Min (S) Max Max (V) Max (F) (A) Po Max (W) Derate at Toper (wre) tOe) Package Max Style N-Channel JFETs, (Cont'd) 5 10 2N5432 J106 J106-18 J106-18 J106-18 TPJ106

Contextual Info: BCX70J NPN Silicon Plastic-Encapsulate Transistor Elektronische Bauelemente A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES A *Low Voltage L 3.COLLECTOR *Low Current 3 *RoHS Compliant Product Top View 1.BASE 1 B S 2 2.EMITTER MARKING V G *AJ

power 22E

Abstract: BCX70GR TRANSISTOR AH BCX70 BCX70G BCX70H BCX70HR BCX70J BCX70JR BCX70K
Contextual Info: SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR BCX70 BCX70 ISSUE 2 – FEBRUARY 95 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL MIN. TYP. Collector-Emitter Breakdown Voltage V(BR)CEO 45 5 Emitter-Base Breakdown Voltage

bcx70g

Abstract: BCX70H BCW70H BCW70G BCX70K
Contextual Info: MOTOROLA SC i DIODES/OPTOJ [ 6367255 MOTOROLA SC 34 ¿ F | b 3 b 7 2 S S DD3fl2b3 1 <D I O D E S / O P T O 34C 38263 SOT23 continued) T V D 2 -9 -/ 9 BCX70G,H,J,K d e v ic e no . SMALL-SIGNAL NPN TRANSISTOR TOP VIEW C | • Designed for general-purpose audio and driver applications.

MAX4281

Abstract: MasterCard pin code MAX4074 MAX4075 MAX4076 MAX4077 MAX4174 MAX4175 MAX4274 MAX4275
Contextual Info: ER LE µPOW NEW AVAILAB S ION VERS WORLD’S FIRST FACTORYPROGRAMMABLE GainAmps IN SOT23 0.1% Accuracy, Optimized Frequency Compensation, and Low Power! 1 Choose the Gain 2 3 Order a GainAmp PART GAIN INTERNAL VCC/2 BIAS GAINBANDWIDTH PRODUCT MHz MAX4074_/

Contextual Info: Transistors SOT23 B SOT23 Case NPN miniReel a » miniBag Order Order Number Number l ^ 7 } Type 500 pcs. ^ 100 pcs. 0 NPN General Purpose MMBT2369 73-2369 53-2369 BC818-16 73-8181 53-8181 BC818-25 73-8182 53-8182 BC818-40 73-8183 53-8183 BC848A 73-8481 53-8481

BCX70H

Abstract: BCX70G transistor marking code ak TRANSISTOR ak package marking aj sot-23 marking ak
Contextual Info: Central BCX70 SERIES Semiconductor Corp. SURFACE MOUNT NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BCX70 Series types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and

Contextual Info: BCX70 SERIES w w w. c e n t r a l s e m i . c o m SURFACE MOUNT NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BCX70 Series types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose

marking code aj

Abstract: Marking AJ BCX70 BCX70G BCX70H BCX70J BCX70K sot23 AJ AK sot-23 transistor marking code ak
Contextual Info: BCX70 SERIES w w w. c e n t r a l s e m i . c o m SURFACE MOUNT NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BCX70 Series types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose

sot23 AJ

Abstract: BTD1768N3 AJ V SOT23 AJ SOT23 btd1768
Contextual Info: CYStech Electronics Corp. Spec. No. : C304N3 Issued Date : 2005.01.10 Revised Date :2007.02.09 Page No. : 1/5 General Purpose NPN Epitaxial Planar Transistor BTD1768N3 Description The BTD1768N3 is designed for use in driver and output stages of AF amplifier and general purpose

563 j 400v

Abstract: 8002A scr SOT-23 JE SOT23 npn 400V sot-23 CMKTC825A CMXDM7002A TLM532 KS sot 23 pnp 400v 10a
Contextual Info: le n H Sem iconductor Corp. }TM Central www.centralsemi.com/product/whatsnew VCE SAT f i t t g 60V, 200mA CET3904E (NPN) CMBT3904E (NPN) CET3906E (PNP) CMBT3906E (PNP) SOT-883L s* • * » * « 1 1 4 * 1 . S tS S 10mA T i * VCE(SAT) « i x * 0.1V. • SOT-883L in SOT-923 S S IS tfS iiJ, ffigij .

Contextual Info: Transistors Reel = 500pcs. SOT23 Case NPN Bag = 100pcs&#39; m i n iR e e l O rd e r Type R a tin g s m in iB a g N um ber V j • O rd e r M d VCEO Ic hpE @Ic fx P a rt V mA M in -M a x V ce (M H z ) M a rk in g 25V 500m A N u m b e r K iS S S ! N P N G e n e ra l P u rp o se

BCX70GR

Contextual Info: BCX70 ELECTRICAL CHARACTERISTICS at Tamb= 25°C unless otherwise stated . PARAMETER SYMBOL MIN. Collector-Emitter Breakdown Voltage V (BR)CEO 45 V Emitter-Base Breakdown Voltage V(BR)EBO 5 V Collector-Emitter Cut-off Current Emitter-Base Cut-Off Current Base-Emitter

sot-23 MARKING CODE ZA

Abstract: b0808 BCB47B BCB17-16 marking za sot89 2SB0151K marking k5 sot89 SOT 86 MARKING E4 n33 SOT-23 10Y sot-23
Contextual Info: SURFACE-MOUNTED DEVICE MARKINGS Because of their smali size, it's not possible to show types/ values on most surface-mounted components. The following tables show the code markings used to identify most common surface-mounted transistors and diodes. Note that the same

smd transistor marking AJ

Abstract: transistor smd marking AJ SMD AJ AJ MARKING 2SD1782K aj smd transistor
Contextual Info: Transistors IC SMD Type Power Transistor 2SD1782K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Low VCE sat .VCE(sat) = 0.2V(Typ.) IC / IB= 0.5A / 50mA 0.4 3 1 0.55 High VCEO, VCEO=80V. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1

Contextual Info: Transistors IC SMD Type Product specification 2SD1782K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Low VCE sat .VCE(sat) = 0.2V(Typ.) IC / IB= 0.5A / 50mA 0.4 3 1 0.55 High VCEO, VCEO=80V. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1

1SS187

Abstract: marking MI
Contextual Info: 1SS187 SILICON EPITAXIAL PLANAR TYPE U n i t in m m ULTRA HIGH SPEED SWITCHING APPLICATION. f-Q5 2 . 5 - 0.3 FEATURES : . Small Package : SOT-23MOD . Low Forward Voltage : Vp = 0 .9 2 V T y p . . Fast Reverse Recovery Time : t r r - l •6 n s ( T y p . )

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBCX70GLT1G LBCX70JLT1G LBCX70KLT1G Featrues Pb-Free Package is Available. Ordering Information Device Marking LBCX70GLT1G LBCX70GLT3G LBCX70JLT1G LBCX70JLT3G LBCX70KLT1G AG AG AJ AJ AK Shipping

BCX70J

Abstract: marking aj 17nF
Contextual Info: BCX70J NPN Silicon Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES   A Low Current Low Voltage 3 C B Top View 1 Collector 1 K  MARKING : AJ L 3 2

Contextual Info: N CLC109 Low-Power, Wideband, Closed-Loop Buffer General Description Features The CLC109 is a high-performance, closed-loop monolithic buffer intended for power sensitive applications. Requiring only 35mW of quiescent power ±5V supplies , the CLC109 offers a high bandwidth

Contextual Info: Transistors IC SMD Type Product specification BCX70 series SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 Low voltage max. 45 V . 0.55 Low current (max. 100 mA). +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1

PRP8351

Abstract: CLC109 CLC109AJE CLC109AJM5 CLC109AJP CLC109ALC CLC109AMC SMD Transistor AJE SOT23
Contextual Info: N CLC109 Low-Power, Wideband, Closed-Loop Buffer General Description Features The CLC109 is a high-performance, closed-loop monolithic buffer intended for power sensitive applications. Requiring only 35mW of quiescent power ±5V supplies , the CLC109 offers a high bandwidth

smd transistor marking AJ

Abstract: transistor smd marking AJ transistor smd npn ak AG SMD TRANSISTOR aj smd npn marking AG transistor smd marking Ag BCX70G BCX70H KEXIN aH SMD
Contextual Info: Transistors IC SMD Type NPN General Purpose Transistors BCX70 series SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 Low voltage max. 45 V . 0.55 Low current (max. 100 mA). +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1

CLC425

Abstract: CLC425A8B CLC425AJE CLC425AJM5 CLC425AJP CLC425ALC CLC425AMC transistor smd CF rs "Magnetic tape"
Contextual Info: N CLC425 Ultra Low Noise Wideband Op Amp General Description Features The CLC425 combines a wide bandwidth 1.9GHz GBW with very √ Hz, 1.6pA/√ √ Hz) and low dc errors (100µ µV low input noise (1.05nV/√ µ V/°C drift) to provide a very precise, wide dynamic-range