AI02064 Search Results

Contextual Info: / T T SGS-THOMSON M29W004T A 7 # . [M»[g[LI gmMD(gS_ M29W004B 4 Mb (x8, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME: 10jis typical

M29W004

Abstract: M29W004B M29W004T
Contextual Info: M 29W 004T M 29W 004B w , SCS-THOMSON k7 # . 4 Mb x8, Block Erase LOW VOLTAGE SING LE SUPPLY FLASH M EM O RY • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS - FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME: 10^is typical - PROGRAM/ERASE CONTROLLER (P/E.C.)

Contextual Info: SGS-THOMSON M29W004T M29W004B raDwunnteinMiiiiiDei 4 Mb 512K x8, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH M EM O RY • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME: 10|is typical

M29W004

Abstract: M29W004B M29W004T
Contextual Info: M29W004T M29W004B 4 Mb x8, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 100ns FAST PROGRAMMING TIME: 10µs typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Byte-by-Byte

IA17

Contextual Info: / T 7 S G S -1H 0M S 0N M29W004T *• 7 /. HBSBEHllgUMWlIgg_ M29W004B 4 Mb x8, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY ■ 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME: lO^is typical

Contextual Info: SGS-THOMSON M29W004T M29W004B raDwunnteinMiiiiiDei 4 Mb 512K x 8, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME: 10|is typical

M29W004

Abstract: M29W004B M29W004T
Contextual Info: M29W004T M29W004B 4 Mb x8, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY DATA BRIEFING 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 100ns FAST PROGRAMMING TIME: 10µs typical PROGRAM/ERASE CONTROLLER (P/E.C.)

1N914

Abstract: M29W004 M29W004B M29W004T
Contextual Info: M 29W 004T M 29W 004B 4 Mbit x8, Block Erase Low Voltage Single Supply Flash Memory • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME: 1 0|iS typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.)

M29W004

Abstract: M29W004B M29W004T
Contextual Info: M29W004T M29W004B 4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory DATA BRIEFING 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 100ns FAST PROGRAMMING TIME: 10µs typical PROGRAM/ERASE CONTROLLER (P/E.C.)

M29W004

Abstract: M29W004B M29W004BB M29W004BT M29W004T
Contextual Info: M29W004T M29W004B 4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory NOT FOR NEW DESIGN M29W004T and M29W004B are replaced respectively by the M29W004BT and M29W004BB 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 100ns

M29W004

Abstract: M29W004B M29W004BB M29W004BT M29W004T
Contextual Info: M29W004T M29W004B 4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory NOT FOR NEW DESIGN M29W004T and M29W004B are replaced respectively by the M29W004BT and M29W004BB 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 100ns

Contextual Info: M29W004T M29W004B SGS-THOMSON IIIIM J ì ILIì M W IIÈ Ì 4 Mb 512K x8, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH M EM O RY PRELIMINARY DATA • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME: 10^s typical

Contextual Info: SGS-THOMSON M29W004T M29W004B raDwunnteinMiiiiiDei 4 Mb 512K x8, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME: 10|is typical

M29W004

Abstract: M29W004B M29W004T
Contextual Info: M29W004T M29W004B 4 Mbit 512Kb x8, Boot Block Low Voltage Single Supply Flash Memory 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 100ns FAST PROGRAMMING TIME: 10µs typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Byte-by-Byte