AI01133D Search Results

AN1004

Abstract: M28F220 M28F410 M28F411 M28F420 M28W431
Contextual Info: AN1004 APPLICATION NOTE WRITE PROTECT FUNCTION for 2Mb and 4Mb BOOT BLOCK FLASH MEMORIES INTRODUCTION The performance of the 2Mb and 4Mb Dual Voltage Boot Block Flash memories, M28F220, M28F420, M28F411, M28W431 has been enhanced by the introduction of a Boot Block Write Protect function using

Contextual Info: M28F420 4 Mbit 512Kb x8 or 256Kb x16, Block Erase Flash Memory • 5V ± 10% SUPPLY VOLTAGE ■ 1 2 V ± 5 % o r ± 10% PROGRAMMING VOLTAGE ■ FAST ACCESS TIME: 60ns ■ PROGRAM/ERASE CONTROLLER (P/E.C.) ■ AUTOMATIC STATIC MODE ■ MEMORY ERASE in BLOCKS

M28F220

Abstract: AN1004 M28F410 M28F411 M28F420 M28W431
Contextual Info: AN1004 APPLICATION NOTE Write Protect Function for 2 Mbit and 4 Mbit Boot Block Flash Memories INTRODUCTION The performance of the 2 Mbit and 4 Mbit Dual Voltage Boot Block Flash memories, M28F220, M28F420, M28F411, M28W431 has been enhanced by the introduction of a Boot Block Write Protect function using

DQ111

Abstract: M28F420 flash memory 5V DQ15A1
Contextual Info: M28F420 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Flash Memory 5V ± 10% SUPPLY VOLTAGE 12V ± 5% or ± 10% PROGRAMMING VOLTAGE FAST ACCESS TIME: 60ns PROGRAM/ERASE CONTROLLER (P/E.C.) AUTOMATIC STATIC MODE MEMORY ERASE in BLOCKS – Boot Block (Bottom location) with hardware

M28F420

Contextual Info: M28F420 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Flash Memory 5V ± 10% SUPPLY VOLTAGE 12V ± 5% or ± 10% PROGRAMMING VOLTAGE FAST ACCESS TIME: 60ns PROGRAM/ERASE CONTROLLER (P/E.C.) AUTOMATIC STATIC MODE MEMORY ERASE in BLOCKS – Boot Block (Bottom location) with hardware

M28F420

Abstract: 00FAH
Contextual Info: M28F420 4 Mb x8/x16, Block Erase FLASH MEMORY DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE 12V ± 5% or ± 10% PROGRAMMING VOLTAGE FAST ACCESS TIME: 60ns PROGRAM/ERASE CONTROLLER (P/E.C.) AUTOMATIC STATIC MODE MEMORY ERASE in BLOCKS – Boot Block (Bottom location) with hardware