AGR26125EU Search Results

AGR26125EU Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
AGR26125EU		Agere Systems	125 W, 2.535 GHz - 2.655 GHz, N-Channel E-Mode, Lateral MOSFET	Original	PDF	49.3KB	4
AGR26125EU-DB		Agere Systems	MOSFET	Original	PDF	224.49KB	9

AGR26125EU Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
F1 J37 Abstract: C14A AGR26125E AGR26125EF AGR26125EU C13B JESD22-C101A 2595MHz Contextual Info: Preliminary Data Sheet August 2004 AGR26125E 125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications	Original	AGR26125E AGR26125E AGR26125EF AGR26125EU DS04-111RFPP F1 J37 C14A AGR26125EF AGR26125EU C13B JESD22-C101A 2595MHz	PDF
Contextual Info: Preliminary Product Brief December 2003 AGR26125E 125 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide	Original	AGR26125E AGR26125EU AGR26125EF AGR261g PB03-192RFPP	PDF
c7a series vishay capacitor Abstract: F1 J37 C14A AGR26125E AGR26125EF AGR26125EU C13B JESD22-C101A taconic vitramon CAPACITOR Contextual Info: AGR26125E 125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications	Original	AGR26125E AGR26125E AGR26125EU AGR26125EF c7a series vishay capacitor F1 J37 C14A AGR26125EF AGR26125EU C13B JESD22-C101A taconic vitramon CAPACITOR	PDF
AGR26125E Abstract: AGR26125EF AGR26125EU AGR26125XF AGR26125XU JESD22-C101A Contextual Info: Preliminary Product Brief April 2004 AGR26125E 125 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications	Original	AGR26125E AGR26125E AGR26125EU AGR26125EF PB04-081RFPP PB03-192RFPP) AGR26125EF AGR26125EU AGR26125XF AGR26125XU JESD22-C101A	PDF
F1 J37 Abstract: C14A AGR26125E AGR26125EF AGR26125EU C13B JESD22-C101A 2595MHz Contextual Info: AGR26125E 125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications	Original	AGR26125E AGR26125E AGR26125EU AGR26125EF F1 J37 C14A AGR26125EF AGR26125EU C13B JESD22-C101A 2595MHz	PDF