AFTI Search Results

Contextual Info: TC55VZM208AJJI/AFTI08,10,12 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The TC55VZM208AJJI/AFTI is a 4,194,304-bit high-speed static random access memory SRAM organized as 524,288 words by 8 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed,

Contextual Info: TC55VZM208AJJI/AFTI08,10,12 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The TC55VZM208AJJI/AFTI is a 4,194,304-bit high-speed static random access memory SRAM organized as 524,288 words by 8 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed,

Contextual Info: TO SHIBA TC55V1001 AFI/AFTI/ATRI/ASTI/ASRI-70,-70L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55V1001AFI/AFTI/ATRI/ASTI/ASRI is a 1,048,576-bit static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this

A10C

Abstract: A15C TC554001 053g
Contextual Info: T O S H IB A TC554001 AFI/AFTI/ATRI-70#-85#-10#-70L#-85L#-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 524.288 WORDS X SILICON GATE CMOS 8 BIT STATIC RAM DESCRIPTION The TC554001AFI/AFTI/ATRI is a 4,194,304-bit static random access memory SRAM organized as

SOJ44-P-400-1

Contextual Info: TC55VZM216AJJI/AFTI08,10,12 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55VZM216AJJI/AFTI is a 4,194,304-bit high-speed static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high

Contextual Info: TO SHIBA TC554001AFI/AFTI/ATRI-70,-85,-10,-70L,-85L,-1 OL TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524.288 WORDS X 8 BIT STATIC RAM DESCRIPTION The TC554001AFI/AFTI/ATRI is a 4,194,304-bit static random access memory SRAM organized as 524.288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device

Contextual Info: TO SHIBA TC55V1001 AFI/AFTI/ATRI/ASTI/ASRI-85,-10,-85L,-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55V1001AFI/AFTI/ATRI/ASTI/ASRI is a 1,048,576-bit static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this

Contextual Info: NHD-240128WG-AFTI-VZ#-C5 Graphic Liquid Crystal Display Module AFTIVZ#C5- Newhaven Display 240 x 128 pixels Display Type: Graphic Model White CCFL Backlight FSTN - Transmissive, 6:00 view, Wide Temperature (-20°C ~+70°C) Built-in Negative Voltage

Contextual Info: TO SHIBA TC55V1001AFI/AFTI/ATRI/ASTI/ASRI-85,-10,-85L,-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55V1001AFI/AFTI/ATRI/ASTI/ASRI is a 1,048,576-bit static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this

Contextual Info: TOSHIBA TC55V1001 AFI/AFTI/ATRI/ASTI/ASRI-70,-70L TOSHIBA M OS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WC>RD BY 8-BIT STATIC RAM DESCRIPTION The TC55V1001AFI/AFTI/ATRI/ASTI/ASRI is a 1,048,576-bit static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this

A10C

Abstract: A15C A17C TC554001
Contextual Info: TO SH IB A TC554001 AFI/AFTI/ATRI-70V,-85V,-10V T O SH IB A M O S DIG ITA L INTEGRATED CIRCUIT SILICON GATE C M O S 524.288 W O R DS x 8 BIT STATIC RAM DESCRIPTION The TC554001AFI/AFTI/ATRI is a 4,194,304-bit static random access memory SRAM organized as

Contextual Info: TOSHIBA TC55V1001 AFI/AFTI/ATRI/ASTI/ASRI-85,-10,-85L,-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55V1001AFI/AFTI/ATRI/ASTI/ASRI is a 1,048,576-bit static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this

s3 86c* -toshiba

Contextual Info: H3S- TOSHIBA 4Mbit Static RAM AFTI/AFTI-L Data Sheet TOSHIBA AFTI-70t-85>-10,-70Lf-85L>-10L T O SH IBA M O S DIGITAL INTEGRATED CIRCUIT SILICON GATE C M O S 262,144-W O R D BY 16-BIT STATIC RAM DESCRIPTION The AFTI is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16

Contextual Info: THIS D RA WI NG CONTAINS INFORMATION THAT IS PROPRIETARY TO M OL E X S PTE LTD AND S H OU LD NOT BE USED WI THOU T WRITTEN PERMISSION Z E-rX M Z£0)O I0-N 3 " È^ì#2iìe*>aiàd4Q>K^ acp'îQî&aftiwSÊifcJâa) (* )

Zener diode 81c

Contextual Info: S G ^ T H O M S O N Ü7E D 81 C 19 091 - « 7 ^ 5 3 7 O O IS ^ S D O I L 3 t0 t ? L-L-aftisfe^á^siuíS* P R E L IM IN A R Y D A T A TRANSIENT VOLTAGE/CURRENT SUPPRESSOR caused by lightning, induction from power lines, etc. The L3101 characteristic, that is its firing voltage

Contextual Info: TC55VZM208AJJI/AFTI08,10,12 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The TC55VZM208AJJI/AFTI is a 4,194,304-bit high-speed static random access memory SRAM organized as 524,288 words by 8 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed,

Contextual Info: TO SHIBA TC55V1001 AFI/AFTI/ATRI/ASTI/ASRI-85,-10,-85L,-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55V1001AFI/AFTI/ATRI/ASTI/ASRI is a 1,048,576-bit static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this

Contextual Info: TEXAS INSTR LOGIC 2SE D aftiTaa oôabS42 3 SN54HC153, SN74HC153 DUAL 4-LINE TO M IN E DATA SELECTORS/MULTIPLEXERS D2684, DECEMBER 1982-REVISED SEPTEMBER 1987 • Permits Multiplexing from N Lines to 1 Line • Performs Parallel-to-Serlal Conversion • Strobe (Enable) Line Provided for Cascading

Contextual Info: TC554001AFI/AFTI/ATRI-70,-85,-10,-70L,-85L,-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC554001AFI/AFTI/ATRI is a 4,194,304-bit static random access memory SRAM organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a

Contextual Info: NHD-240128WG-AFTI-VZ#-C5 Graphic Liquid Crystal Display Module AFTIVZ#C5- Newhaven Display 240 x 128 pixels Display Type: Graphic Model White CCFL Backlight FSTN - Transmissive, 6:00 view, Wide Temperature (-20°C ~+70°C) Built-in Negative Voltage

Contextual Info: TC55VZM216AJJI/AFTI08,10,12 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55VZM216AJJI/AFTI is a 4,194,304-bit high-speed static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high

TC554001AFI

Abstract: A15C TC554001
Contextual Info: TOSHIBA TC554001 AFI/AFTI/ATRI-70#-85#-10#-70L#-85L#-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 524.288 WORDS X SILICON GATE CMOS 8 BIT STATIC RAM DESCRIPTION The TC554001AFI/AFTI/ATRI is a 4,194,304-bit static random access memory SRAM organized as 524.288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device

graphic LCD screen 240128 T6963C

Abstract: LCD 240*128 T6963C t6963c Commands and Instruction set 240x128 T6963C lcd 240128 DATA ed 240x128 lcd 240128 NHD240128WGAFTIVZ T6963C 240128
Contextual Info: User’s Guide NHD-240128WG-AFTI-VZ#-C5 LCM Liquid Crystal Display Graphic Module RoHS Compliant AFTIVZ#C5- Newhaven Display 240 x 128 pixels W= Factory Line G= Display Mode: Graphic Model/Serial Number White CCFL B/L FSTN-(negative) Transmissive, 6:00 View, Wide Temperature (-20 ~ +70c)

Contextual Info: TC55VZM216AJJI/AFTI08,10,12 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55VZM216AJJI/AFTI is a 4,194,304-bit high-speed static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high