AERO M CAPACITOR Search Results

Contextual Info: TYPE LPH Snap-In Capacitors FEATURES: • High Ripple Current • All Welded Construction • Low ESR - High Temperature - 105°C •Optional Standoffs with Straight Pins The LPH snap-in capacitor manufactured by Aero M is designed for applications requiring

Contextual Info: TYPE CGR Computer Grade Aluminum Electrolytic Capacitor FEATURES: m O 33 t> L / Z t> n •Very Low ESR • High Reliability • Very High Ripple Current • -55°C to +105°C Operation The CGR capacitor manufactured by Aero M is specifically designed as a very low ESR, high

CW20C104K

Abstract: CL31B104KBNC CY20C104M 474j capacitor CL31B102KBNC UP36BA0350 CW15C103K ECPU01105MA5 CL21B104KBNC CW20C473K
Contextual Info: Cornell Dubilier Electronics, Inc. - Complete Capacitor Cross Reference AERO M, AEROVOX, ARCO, ASC, ATC, AVX, BC/PHILIPS, BISHOP, CAL-CHIP, CENTRALAB, COOPER, ELECTROCUB, ELECTRONIC CONCEPTS, ELNA, EVOX, GE, HOBART, IBM, ILLINOIS CAP, JOHANSON, KEMET, KINGSTON, KOA, KORCHIP, KYOCERA, LELAND, LENNOX, MALLORY/NACC,

PSA5R10590N

Abstract: Aero m capacitor
Contextual Info: ! I TYPE PS AC Motor Start Capacitor FEATURES: Operating Voltage: 110 VAC to 330 VAC Operating Temperatures: -40°C to +65°C Moisture & Oil Resistant Plastic Case Operating Frequency 50-60 Hz Aero M manufactures AC electrolytic motor starting capacitors to meet EIA RS463 Type I

Not3

Contextual Info: riOTOROLA SC -CHEMORY/ASI M b5E » • t3t75Sl 003^242 07S ■ M O TO R O LA 8S256 Advance Information 256K x 8 CMOS SRAM Multichip Module Commercial Plus and Mil/Aero Applications ELECTRICALLY TESTED PER: MPG8S256 The Motorola 8S256 is a CMOS SRAM housed in a hermetically sealed

Planned Not3

Contextual Info: MOTOROLA M SC ÍHEdORY/ASI tS E D • b3b7251i □□flciHS4 M O TO R O LA ■ nOTB 32S128 Advance Information 4 Megabit CMOS SRAM User-Configurable Multichip Module Commercial Plus and Mil/Aero Applications A V A IL A B L E A S ELECTRICALLY TESTED PER:

Contextual Info: TYPE CGO ilgf' Com puter Grade Alum inum E le c tro ly tic C ap acito r FEATURES: • Symmetrical ESR • High Ripple Currents The CGO capacitor manufactured by Aero M with its low symmetrical equivalent series resistance and capacitance tolerance provides the characteristics required for output filtering

Contextual Info: TYPE VPR Single-Ended FEATURES: • Low ESR • Long Life • Standoffs • Wide operating Temperatures 105°C The VPR capa citor m anufactured by Aero M is specifically designed for use in high freq uency sw itching pow er supplies w here low im pedance and low inductance characteristics are

Planned Not3

Abstract: smd 42t
Contextual Info: MOTOROLA SC -CdENORY / A S I bSE D • tj3b?ESl 0001543 M MOTOROLA Advance Information 512K x 8 CMOS SRAM Multichip Module 8S512 Commercial Plus and Mil/Aero Applications ELECTRICALLY TESTED PER: MPG8S512 The Motorola 8S512 is a CMOS SRAM housed in a herm etically sealed

Contextual Info: TYPE VPE Single-Ended FEATURES: Very Low ESR • Symmetrical ESR Long Life • Standoffs Wide Operating Temperatures 105°C i 1 1 The VPE capacitor manufactured by Aero M is specifically designed for use in high frequency switching power supplies where low impedance and very low esr characteristics are required. The VPE is designed to

511000a

Abstract: mode 811
Contextual Info: M OT OR OL A M SC - CnEf l OR Y / A S I bSE D • L3t,75Sl M O TO R O LA Q0ÖT173 flbfl ■ riOT3 511000A Advance Information Commercial Plus and Mil/Aero Applications 1M x 1 CMOS Dynamic RAM Page Mode ELECTRICALLY TESTED PER: MPG511000A AVAILABLE AS The 511000A is a 1.On C M OS high-speed, dynam ic random access memory.

514256A

Abstract: l 7251 3.1
Contextual Info: nOTOROLA M SC { N E M O R Y / A S I bSE D • b 3 b ? 5 S l 00flT203 325 M O T O R O LA 514256A Advance Information Commercial Plus and Mil/Aero Applications 256K x 4 CMOS Dynamic RAM Page Mode E L E C TR IC A LLY T E S T E D PER: M P G 514256A The 514256A is a 1.0^ CMOS high-speed, dynamic random access memory.

Si4205-BM

Abstract: Si4205 Si4206-BM aero block diagram of RF Transceiver Antenna Factor gsm 900 gsm transceiver DAC PLL Synthesizer Modules si4206 triple-band antenna switch gsm
Contextual Info: Aero I/Aero I+ GSM/GPRS Transceiver INTEGRATED TRANSCEIVERS FOR MULTI-BAND GSM/GPRS WIRELESS COMMUNICATIONS FEATURES • Single 8 x 8 mm package • Complete multi-band GSM cellular radio front-end using 100% CMOS RF technology – GSM 850 Class 4, small MS

Contextual Info: AT69170E Space FPGA Configuration Memory DATASHEET See Applicable Errata in Section 13. Features ● 4 Mbits On-Chip Flash Array ● Memory Designed to Store Configuration Programs for Field Programmable Gate Arrays FPGAs ● In-System Programming (ISP) via Two-Wire Bus

RY 227

Abstract: ROUND ROBIN ARBITRATION AND FIXED PRIORITY "RY 227" at697f AT697F-KG-E 0722402VYC 5962-0722402vyc AT697 AT697F-2H-E ATC18RHA
Contextual Info: Features • SPARC V8 High Performance Low-power 32-bit Architecture – 8 Register Windows • Advanced Architecture: • • • • • • • • • • • • • – On-chip Amba Bus – 5 Stage Pipeline – 16 kbyte Multi-sets Data Cache – 32 kbyte Multi-sets Instruction Cache

H9720

Abstract: m06g Marking Code SMD databook 937DMQB jm38510/10201bca 5962-8866207NA national semiconductor databook Motorola transistor smd marking codes DM54LS279J lm723
Contextual Info: N MILITARY / AEROSPACE DESIGN/PROCESS CHANGE NOTIFICATION PCN Nr: 1997 Listing GIDEP Nr: GIDEP Category: Issued: 01/21/97 TRB Nr: This is to advise you that a Design and/or Process Change will be made to the following MIL/AERO product s : Product ID (Description):

4153E

Abstract: dma24 PMA21 TSC21020F-20MB-E
Contextual Info: Features • • • • • • • • • • • • • • • • • • • • • • • • • Superscalar IEEE Floating-Point-Processor Off-Chip Harvard Architecture Maximizes Signal Processing Performance 50 ns, 20 MIPS Instruction Rate, Single Cycle Execution

AT60142

Abstract: AT60142E AT60142ET TM1019 4156E
Contextual Info: Features • Operating Voltage: 3.3V • Access Time: • • • • • • • • • • – 15 ns Preview for 3.3V biased only (AT60142E) – 17 ns and 20 ns for 5V Tolerant (AT60142ET) Very Low Power Consumption – Active: 810 mW (Max) @ 15 ns – Standby: 215 µW (Typ)

Aero m capacitor

Abstract: AT60142 AT60142E AT60142ET TM1019 fp36
Contextual Info: Features • Operating Voltage: 3.3V • Access Time: • • • • • • • • • • – 15 ns Preview for 3.3V biased only (AT60142E) – 20 ns for 5V Tolerant (AT60142ET) Very Low Power Consumption – Active: 810 mW (Max) @ 15 ns – Standby: 215 µW (Typ)

ADSP-21xxx

Abstract: ADSP-21000 ADSP21020 ADSP-21020 TSC21020F
Contextual Info: Features • • • • • • • • • • • • • • • • • • • • • • • • • Superscalar IEEE Floating-Point-Processor Off-Chip Harvard Architecture Maximizes Signal Processing Performance 50 ns, 20 MIPS Instruction Rate, Single Cycle Execution

ADSP-21xxx

Abstract: ADSP-21000 ADSP21020 ADSP-21020 TSC21020F
Contextual Info: Features • • • • • • • • • • • • • • • • • • • • • • • • • Superscalar IEEE Floating-Point-Processor Off-Chip Harvard Architecture Maximizes Signal Processing Performance 50 ns, 20 MIPS Instruction Rate, Single Cycle Execution

4153E

Abstract: ADSP-21xxx 5962-9953901VXC TSC21020F DMD20 PMD39 mrf 174 mrf 212 ADSP-21000 ADSP21020
Contextual Info: Features • • • • • • • • • • • • • • • • • • • • • • • • • Superscalar IEEE Floating-Point-Processor Off-Chip Harvard Architecture Maximizes Signal Processing Performance 50 ns, 20 MIPS Instruction Rate, Single Cycle Execution

ADSP-21000

Abstract: ADSP21020 ADSP-21020 TSC21020F M 9512 FY MQFPF-256 951200201
Contextual Info: Features • • • • • • • • • • • • • • • • • • • • • • • • • • Superscalar IEEE Floating-Point-Processor Off-Chip Harvard Architecture Maximizes Signal Processing Performance 50 ns, 20 MIPS Instruction Rate, Single Cycle Execution

ADSP-21xxx

Abstract: mrf 212 PGA223 ADSP-21000 ADSP21020 ADSP-21020 TSC21020F DMD30
Contextual Info: Features • • • • • • • • • • • • • • • • • • • • • • • • • • Superscalar IEEE Floating-Point-Processor Off-Chip Harvard Architecture Maximizes Signal Processing Performance 50 ns, 20 MIPS Instruction Rate, Single Cycle Execution