AE-RR TRANSISTOR Search Results

rp200q

Abstract: RP200N RP200K
Contextual Info: RP200x SERIES 3-MODE 300mA LDO REGULATOR NO.EA-182-081217 OUTLINE The RP200x Series consist of CMOS-based voltage regulator ICs with high output voltage accuracy, low dropout voltage and low supply current. These ICs perform with the chip enable function and realize a standby

RP201N

Contextual Info: RP201x SERIES Auto ECO MODE/Low Voltage 150mA LDO REGULATOR NO.EA-234-090413 OUTLINE The RP201x Series consist of CMOS-based voltage regulator ICs with high output voltage accuracy, low dropout voltage and low supply current. These ICs perform with the chip enable function and realize a standby

RP201K

Contextual Info: RP201x SERIES 3-MODE 150mA LDO REGULATOR NO.EA-234-090525 OUTLINE The RP201x Series consist of CMOS-based voltage regulator ICs with high output voltage accuracy, low dropout voltage and low supply current. These ICs perform with the chip enable function and realize a standby

RP200Q

Contextual Info: RP200x SERIES 3-MODE 300mA LDO REGULATOR NO.EA-182-090714 OUTLINE The RP200x Series consist of CMOS-based voltage regulator ICs with high output voltage accuracy, low dropout voltage and low supply current. These ICs perform with the chip enable function and realize a standby

8070N

Contextual Info: SIEMENS SIPMOS Power Transistors • • • N channel Enhancement mode Avalanche-rated Type Vos Io BUZ 16 50 V 48 A 0.018 Q BUZ 16 S2 60 V 48 A ¡0 .0 1 8 Q R D S o n M axim um Ratings Param eter Continuous drain current , T C = 19 'C Pulsed drain current, Tc = 2 5 ‘ C

KSP06

Abstract: KSP05
Contextual Info: KSP05/06 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emltter Voltage: VCEo = KSP05: 60V KSP06: 80V • Collector DlMlpatlon: Pc max =625mW TO -92 ABSOLUTE MAXIMUM RATINGS (T, =25#C) Characteristic Symbol C o lle cto r B ase Voltage

YTFP150

Contextual Info: YTFP150 FIELD E F F E C T TRANSISTOR SILICON N CHANNEL MOS TY P E tt-M O S i i HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS CHOPPER REGULATOR,DC-DC CONVERTER AND HOTOR _Unit in »a DRIVE APPLICATIONS, 1S- 9MAX.

TRANSISTOR L 287 A

Abstract: transistor 800V 1A
Contextual Info: KSC5338 NPN SILICON TRANSISTOR HIGH VOLTAGE POWER SWITCH SWITCHING APPLICATION • High Speed Switching • Wide SOA ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voitage Collector-Emitter Voltage VcBO 1000 VcEO 450 V V Emitter-Base Voltage

T151

Abstract: T460 T760 T930
Contextual Info: 6DI10M S-050 ioa £ ± / < 9 — • Outline Drawings s < n - Y 17 > i > x 9 :£ i > 3 - - ) \ s POWER TRANSISTOR MODULE : Features • h F E ^ 'iijl' H ig h D C C u rre n t G ain • H ig h s p e e d s w itc h in g • 7 'J — In c lu d in g F ree W h e e lin g D io d e

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR MJD350 HIGH VOLTAGE POWER TRANSISTORS DPAK FOR SURFACE MOUNT APPLICATIONS D-PAK • Lead Form ed fo r Surface M ount Applications No Suffix • Straight Lead (“ -I “ Suffix) ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector Base Voltage

Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSD560 LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE • Complement to KSB601 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Base Voltage VcBO 150 V Collector-Emitter Voltage

IRF 543 MOSFET

Abstract: irf150 MOSFET IRF150 circuits of IRF150 JANTX2N6764 JANTXV2N6764 90337G
Contextual Info: PD - 90337G IRF150 JANTX2N6764 JANTXV2N6764 [REF:MIL-PRF-19500/543] 100V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF150 BVDSS 100V RDS(on) 0.055Ω ID 38A The HEXFETtechnology is the key to International

IRF150

Abstract: circuits of IRF150
Contextual Info: PD - 90337G IRF150 JANTX2N6764 JANTXV2N6764 [REF:MIL-PRF-19500/543] 100V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF150 BVDSS 100V RDS(on) 0.055Ω ID 38A The HEXFETtechnology is the key to International

Contextual Info: KSC900 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY, LOW N O ISE AMPLIFIER • Collector-Base Voltage V Cbo = 3 0 V • Low Noise Level NL=50m V Max ABSO LU TE MAXIMUM RATINGS (TA« 2 5 t) Characteristic Sym bol Collector-Base Voltage Collector-Emitter Voltage

MG100M2CK1

Abstract: npn 1000V 100a 1000v, NPN 100A
Contextual Info: MG100M2CK1 G TR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . 2 Power Transistors and 2 F r e e Wheeling Diodes are Built-In to 1 Package. . High DC Current G a i n : h F E = 1 0 0 M i n . (Ic=100A)

2SC733

Abstract: transistor 2sc733 GR 733 2sc735 2SC733 GR 2SC733-Y transistor bf 458 2SC733BL TRANSISTOR 2SC 458 TRANSISTOR 2SC 733
Contextual Info: ì / ' J D > N P N I ^ ^ r 5/? J W B h 5 > SILICON o NPN EPITAXIAL ^ TRANSISTOR 2s c 733 9 P C T £ Ä (P C T PROCES^ Audio Ampli f i e r Applications Unit in m m 05.8MAX. • 2SC735 • BJ&P-F 04.95MAX. i“o R e c o m m e n d ed for Driver Stage in Claes

T7K40

Contextual Info: IH NPNff—U > h>h~7> y .X £ / ' NPN Darlington Transistor Outline Dim ensions 4.6* ~*ï i?fiBiI§]S& Eq u ivalen t C ircu it 2 . 4 ± 0 .3 ?c nQ.6-0.1 =+0-3 Bo- Unit ! mm Case : TO-220 • — vw— * — vw— ■ ~22on -oi2on Ae A b so lu te Max. R a tin g s

2SA1899

Abstract: 2SC5052
Contextual Info: TOSHIBA 2SA1899 2 S A 1 899 TO SH IBA TRANSISTOR PO W E R A M PLIFIER APPLICATIONS. SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm 2.7MAX. DRIVER STAGE AM PLIFIER APPLICATIONS. 3.8 • Complementary to 2SC5052. ailFs M A X IM U M RATINGS (Ta = 25°C)

buz15

Contextual Info: SIEM ENS SIPMOS Power Transistor • • • N channel Enhancem ent mode Avalanche-rated Type ^D S A ^ OS on) BUZ 15 50 V 45 A 0.03 £2 Maxim um Ratings Param eter Continuous drain current, Tc = 28 "C Pulsed drain current, 7C = 2 5'C Avalanche current, limited by Tj mal<

Contextual Info: 3 0 e: D ¿ = 7 n 7 e! 2 ci2 3 7 Q Q 2ci c127 S C S -T H O M S O N T H T '— P ' S 0, — Vi f i T r S ^7# RjflH @ilLi gT]»lSÖÖ©i r - SGSP230 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP230 V dss 450 V ^DS(on 30 *D 2.5 A • HIGH SPEED SWITCHING APPLICATIONS

Contextual Info: DI300M-120 A 7 - Y POWER TRANSISTOR MODULE : Features • • hFEA'*Bi,' High Arm Short Circuit Capability High DC Current Gain • — K rtj# Including Free Wheeling Diode • H&iSkWf Insulated Type : A pplications • ifL ffl-i >'<—9 General Purpose Inverter

IRF9140

Contextual Info: PD - 93976B IRF9140 100V, P-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF9140 -100V 0.2Ω ID -18A  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

IRF4401

Abstract: IRF440 IRF44
Contextual Info: PD - 90372A IRF440 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF440 500V 0.85Ω ID 8.0A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.

Contextual Info: PD - 90372A IRF440 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF440 500V 0.85Ω ID 8.0A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.