AE-RR TRANSISTOR Search Results

rp200q

Abstract: RP200N RP200K
Contextual Info: RP200x SERIES 3-MODE 300mA LDO REGULATOR NO.EA-182-081217 OUTLINE The RP200x Series consist of CMOS-based voltage regulator ICs with high output voltage accuracy, low dropout voltage and low supply current. These ICs perform with the chip enable function and realize a standby

RP201N

Contextual Info: RP201x SERIES Auto ECO MODE/Low Voltage 150mA LDO REGULATOR NO.EA-234-090413 OUTLINE The RP201x Series consist of CMOS-based voltage regulator ICs with high output voltage accuracy, low dropout voltage and low supply current. These ICs perform with the chip enable function and realize a standby

RP201K

Contextual Info: RP201x SERIES 3-MODE 150mA LDO REGULATOR NO.EA-234-090525 OUTLINE The RP201x Series consist of CMOS-based voltage regulator ICs with high output voltage accuracy, low dropout voltage and low supply current. These ICs perform with the chip enable function and realize a standby

RP200Q

Contextual Info: RP200x SERIES 3-MODE 300mA LDO REGULATOR NO.EA-182-090714 OUTLINE The RP200x Series consist of CMOS-based voltage regulator ICs with high output voltage accuracy, low dropout voltage and low supply current. These ICs perform with the chip enable function and realize a standby

YTFP150

Contextual Info: YTFP150 FIELD E F F E C T TRANSISTOR SILICON N CHANNEL MOS TY P E tt-M O S i i HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS CHOPPER REGULATOR,DC-DC CONVERTER AND HOTOR _Unit in »a DRIVE APPLICATIONS, 1S- 9MAX.

T151

Abstract: T460 T760 T930
Contextual Info: 6DI10M S-050 ioa £ ± / < 9 — • Outline Drawings s < n - Y 17 > i > x 9 :£ i > 3 - - ) \ s POWER TRANSISTOR MODULE : Features • h F E ^ 'iijl' H ig h D C C u rre n t G ain • H ig h s p e e d s w itc h in g • 7 'J — In c lu d in g F ree W h e e lin g D io d e

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR MJD350 HIGH VOLTAGE POWER TRANSISTORS DPAK FOR SURFACE MOUNT APPLICATIONS D-PAK • Lead Form ed fo r Surface M ount Applications No Suffix • Straight Lead (“ -I “ Suffix) ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector Base Voltage

IRF 543 MOSFET

Abstract: irf150 MOSFET IRF150 circuits of IRF150 JANTX2N6764 JANTXV2N6764 90337G
Contextual Info: PD - 90337G IRF150 JANTX2N6764 JANTXV2N6764 [REF:MIL-PRF-19500/543] 100V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF150 BVDSS 100V RDS(on) 0.055Ω ID 38A The HEXFETtechnology is the key to International

MG100M2CK1

Abstract: npn 1000V 100a 1000v, NPN 100A
Contextual Info: MG100M2CK1 G TR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . 2 Power Transistors and 2 F r e e Wheeling Diodes are Built-In to 1 Package. . High DC Current G a i n : h F E = 1 0 0 M i n . (Ic=100A)

2SC733

Abstract: transistor 2sc733 GR 733 2sc735 2SC733 GR 2SC733-Y transistor bf 458 2SC733BL TRANSISTOR 2SC 458 TRANSISTOR 2SC 733
Contextual Info: ì / ' J D > N P N I ^ ^ r 5/? J W B h 5 > SILICON o NPN EPITAXIAL ^ TRANSISTOR 2s c 733 9 P C T £ Ä (P C T PROCES^ Audio Ampli f i e r Applications Unit in m m 05.8MAX. • 2SC735 • BJ&P-F 04.95MAX. i“o R e c o m m e n d ed for Driver Stage in Claes

T7K40

Contextual Info: IH NPNff—U > h>h~7> y .X £ / ' NPN Darlington Transistor Outline Dim ensions 4.6* ~*ï i?fiBiI§]S& Eq u ivalen t C ircu it 2 . 4 ± 0 .3 ?c nQ.6-0.1 =+0-3 Bo- Unit ! mm Case : TO-220 • — vw— * — vw— ■ ~22on -oi2on Ae A b so lu te Max. R a tin g s

Contextual Info: 3 0 e: D ¿ = 7 n 7 e! 2 ci2 3 7 Q Q 2ci c127 S C S -T H O M S O N T H T '— P ' S 0, — Vi f i T r S ^7# RjflH @ilLi gT]»lSÖÖ©i r - SGSP230 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP230 V dss 450 V ^DS(on 30 *D 2.5 A • HIGH SPEED SWITCHING APPLICATIONS

Contextual Info: DI300M-120 A 7 - Y POWER TRANSISTOR MODULE : Features • • hFEA'*Bi,' High Arm Short Circuit Capability High DC Current Gain • — K rtj# Including Free Wheeling Diode • H&iSkWf Insulated Type : A pplications • ifL ffl-i >'<—9 General Purpose Inverter

IRF9140

Contextual Info: PD - 93976B IRF9140 100V, P-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF9140 -100V 0.2Ω ID -18A  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

Contextual Info: PD-90330G IRF450 JANTX2N6770 JANTXV2N6770 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number BVDSS RDS(on) IRF450 500V ID 0.400Ω 12A The HEXFET ®technology is the key to International

inverter MOSFET 900V 3A

Abstract: IRFAF40
Contextual Info: PD - 90581 IRFAF40 900V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAF40 BVDSS 900V RDS(on) 2.5Ω ID 4.3Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

irf 940

Abstract: IRFAC40 TO-204AA
Contextual Info: PD - 90587 IRFAC40 600V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAC40 BVDSS RDS(on) ID 600V 1.2Ω 6.2Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

JANTX2N6770

Abstract: irf4501 mosfet IRF450 IRF450 JANTXV2N6770
Contextual Info: PD - 90330F IRF450 JANTX2N6770 JANTXV2N6770 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF450 BVDSS 500V RDS(on) 0.400Ω ID 12A The HEXFETtechnology is the key to International

IRFAG40

Contextual Info: PD -90575 IRFAG40 1000V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAG40 BVDSS 1000V RDS(on) 3.5Ω ID 3.9Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

IRFAG50

Contextual Info: PD - 90582 IRFAG50 1000V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAG50 BVDSS 1000V RDS(on) 2.0Ω ID 5.6Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

IRF9130

Abstract: IRF9130 mosfet gate drive for mosfet irf9130 JANTX2N6804 JANTXV2N6804
Contextual Info: PD - 90549C IRF9130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6804  HEXFET TRANSISTORS JANTXV2N6804 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/562] 100V, P-CHANNEL Product Summary Part Number IRF9130 BVDSS -100V RDS(on) 0.30 Ω ID -11A The HEXFETtechnology is the key to International

IRF140

Abstract: irf140 ir IRF1401
Contextual Info: PD - 90369 IRF140 100V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF140 BVDSS 100V RDS(on) 0.077Ω ID 28A The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

irf9240

Contextual Info: PD - 90420 IRF9240 200V, P-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF9240 BVDSS -200V RDS(on) 0.5Ω ID -11A  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

IRF240

Abstract: mosfet IRF240
Contextual Info: PD - 90370 REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE IRF240 200V, N-CHANNEL Product Summary Part Number IRF240 BVDSS 200V RDS(on) 0.18Ω ID 18A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.