ADO Search Results

types of scr packages

Contextual Info: 1. General Information Toshiba's photocouplers incorporate into w hite mold packages a com bination of either GaAs infrared LEDs or GaAIAs infrared LEDs and silicon photo-detectors GaAIAs LEDs are adopted in the high-speed photo-IC types by utilizing their features of high speed and high light pow er

smd diode ua

Abstract: transistor smd marking 2SC3648
Contextual Info: Transistors SMD Type High-Voltage Switching Applications 2SC3648 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Fast Switching Speed Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage

smd transistor GY

Abstract: smd marking GY smd GY marking gy VEBO-15V MARKING SMD NPN TRANSISTOR BR 2SC4413
Contextual Info: Transistors IC SMD Type NPN Epitaxial Planar Silicon Transistor 2SC4413 Features Adoption of FBET process. High DC current gain. Low collector-to-emitter saturation voltage. High VEBO. Small Cob. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25

smd rf transistor marking

Abstract: HVC136 marking SMD P6 RF25
Contextual Info: Diodes SMD Type Silicon Epitaxial Trench Pin Diode HVC136 SOD-523 +0.05 0.3-0.05 Unit: mm +0.1 1.2-0.1 +0.05 0.8-0.05 Features + +0.1 0.6-0.1 - Adopting the trench structure improves low capacitance. C = 0.45 pF max Low forward resistance. (rf=2.5 max) +0.1

Contextual Info: Emphasizing efficiency while contributing to end product miniaturization MTM86XXX Power Management MOSFET Series „ Overview These devices are power management MOSFETs that are optimal for mobile equipment such as cell phones and that adopt the newlydeveloped WSSMini6-F1 ultraminiature package 1.6 x 1.6 mm .

2SC3686

Contextual Info: Product Specification www.jmnic.com 2SC3686 Silicon NPN Power Transistors ESCRIPTION ・High breakdown voltage ・High reliability adoption of HVP process . ・Fast speed ・Adoption of MBIT process. ・With TO-3PN package APPLICATIONS ・Ultrahigh-definition color display horizontal

TTL to LVTTL level shifter

Abstract: level shifter from TTL to CMOS level shifter from TTL to CMOS bidirectional level shifter 5V to 3.3V cmos ic and gates "Level Shifter" level shifter 3.3 cmos "pitch shifter" ic level shifter cmos ic and gates datasheet
Contextual Info: PF842-03 SLA40000 Series High Density Gate Array ● Super-high-density/speed gate array ● Operates on 3.3V, 3.0V, 2.5V, 2.0V single power source (level shifter is pre-installed) ● Raw of gates: 28 to 411k gates (sea of gates) • OVERVIEW The SLA 40000 series are super-high-density/speed, Sea-of-gate type CMOS gate arrays adopting the 0.45µ m

Threads

Abstract: proximity 750HZ LJE-0224NA LJM-00808LB LJM-00824NA LJM-00824PA LJM-00824PB 630VDC
Contextual Info: SUPER MINI PROXIMITY SWITCH Adopt IC to contract volume ，nip bracket，and convenient equipment.All with live CHRACTERISTICS instruction. SERIES NEMBER LJI LJN LJM LJE LH DETECT DISTANCE Type insert： 0.8mm Type insert： 0.8mm Type insert： 0.8mm Type insert：2mm

74ACO4

Abstract: RBS 2111 74ACO HA5020 HSP48901 CXD1179 HA-2544 HI1176 HI1179 HI1179-EV
Contextual Info: HI1179 8-Bit, 35 MSPS, Video A/D Converter August 1997 Features Description • Resolution 8-Bit . . . . . . . . . . . . . . . . . . ±0.5 LSB DNL The HI1179 is an 8-bit CMOS analog-to-digital converter for video use that features a sync clamp function. The adoption

411K

Abstract: bc 541 level shifter from TTL to CMOS SLA4028 SLA40000 SLA4078 SLA407T SLA4115 SLA411T SLA4162
Contextual Info: PF842-02 SLA40000 Series High Density Gate Array ● Super-high-density/speed gate array ● Operates on 3.3 and 3.0V power source level shifter is pre-installed ● Raw of gates: 28 to 411k gates (sea of gates) • OVERVIEW The SLA 40000 series are super-high-density/speed, Sea-of-gate type CMOS gate arrays adopting the 0.45É m

EIAJ-IC-121

Abstract: EIAJ-IC-121 Method 20 EIAJ-IC-121-18 EIAJIC-121 MIL-STD-202E-101D MIL-STD-202E 101D
Contextual Info: QUALITY ASSURANCE 2. QUALITY ASSURANCE S-M O S Systems, Inc., supported by the foundation of results acquired through experience in the adoption of low-pow er CMOS LSI for SEIKO quartz watches, has been providing highly reliable products that have set new

th 31543

Contextual Info: Ordering number:EN 3154 F C 11 N-Channel Junction Silicon FET Low-Frequency General-Purpose Amp, Differential Amp Applications F e a tu re s • Adoption of FBET process • Composite type with 2 transistors contained in the CP package currently in use, improving the

37KW motor wiring diagram

Abstract: 37KW E80276 PM200CLA120 ic 3254 internal block diagram
Contextual Info: MITSUBISHI MITSUBISHI <INTELLIGENT <INTELLIGENT POWER POWER MODULES> MODULES> PM200CLA120 PM200CLA120 FLAT-BASE FLAT-BASE TYPE TYPE INSULATED INSULATED PACKAGE PACKAGE PM200CLA120 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process.

pressure vessel

Abstract: NEGATIVE Pressure TranSMITTER 4 WIRE Pressure transmitter 4 WIRE LD500 M12X1 M20X1 DIAPHRAGM PUMP pressure oil gauge sensor wheatstone bridge in pressure sensor anti-lighting
Contextual Info: LD500 pressure transmitter Description LD500 pressure transmitter adopts the high accurate and stable isolation sensors from USA, which combine solid-state integration technique with isolation diaphragm technique. The product preserves high sensitivity, linearity and stability even

CXD1175M

Contextual Info: CXD1175M/P SONY. 8-bit 20 MSPS Video A/D Converter CMOS E v a lu a tio n B o a rd A v a ila b le Description CXD1175M CXD1175 is an 8-bit CMOS A/D converter for video use. The adoption of a 2-step parallel system achieves low consumption at a maximum conversion speed of 20 MSPS.

Contextual Info: Ordering number : EN 3138 SA%YD 2SC4519 No.3138 NPN Epitaxial Planar Silicon Transistor High-Speed Switching Applications F eatu res . Adoption of FBET process • Low collector-to-emitter saturation voltage • Fast switching speed . Small-sized package unit

Contextual Info: O rd e rin g n u m b e r : EN 2 0 4 0 A J 2SB1122/2SD1622 SA\YO PN P/N PN Epitaxial Planar Silicon Transistors i Low-Frequency Power Amp Applications Applications . Voltage regulators relay drivers, lamp drivers, electrical equipment Features . Adoption of FBET process

P552

Contextual Info: D C -D C U > M - 2 DC-DC CONVERTER fE £ O IR 6 # : •s /h s • \m • Super mini and thinner size • High wattage density 20W/cc • Realization of high efficiency with the adoption of synchronous rectification method • Adjustable output voltage with external voltage

2sb1302

Contextual Info: Ordering number: E N 2 5 5 5 A 2SB1302 N0.2555A SA\YO PNP E pitaxial P lanar Silicon T ransistor High-Current Switching Applications Applications . DC-DC converters, motor drivers, relay drivers, lamp drivers Features . Adoption of FBET, MBIT processes . Low collector to emitter saturation voltage

Contextual Info: ^O rd e rin g number . EN 2 0 0 5 A 2SA1416/2SC3646 NO.2005A PN P/N PN Epitaxial Planar Silicon Transistors SAiYO i High-Voltage Switching Applications Features . Adoption of FBET, MBIT processes. . High breakdown voltage and large current capacity. . Fast switching time.

ITS 31422

Abstract: 2044B 2SC4523
Contextual Info: Ordering num ber: EN 3142A N0.3142A 2SC4523 NPN Epitaxial Planar Silicon Transistor i High-Speed Switching Applications Features . Adoption ofFBET, MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • Fast switching speed

2SA1729

Contextual Info: Ordering n u m b e r:EN 3133 _ No.3133 2 S A 17 2 9 PNP Epitaxial Planar Silicon Transistor High-Speed Switching Applications F e a tu re s • Adoption of FBET, MBIT processes •Large current capacity • Low collector-to-emitter saturation voltage

EN2925

Abstract: 2SC4257
Contextual Info: Ordering number : EN2925 No. 2925 2SC4257 NPN Triple Diffused Planar Silicon Transistor High-Voltage Amp, High-Voltage Switching Applications Features • High breakdown voltage • Small c0b • Wide ASO • High reliability Adoption of H VP process unit

2SC3989

Abstract: XC10A ic24a COY EMITTER
Contextual Info: Ordering number: EN 2556 2 S C 3. 9 8 9 NPN T r i p l e D if fu se d P la na r Type Silicon Transistor Sw itching Re g u l a t o r A p p l i c a t i o n s Features . High breakdown voltage, high reliability . Fast switching speed t^*: 0.1ps typ . Adoption of MBIT process.