ADMM Search Results

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

PA1911

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1911 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm FEATURES 0.16+0.1 –0.06 +0.1 0.65–0.15 0.32 +0.1 –0.05 6 5 4 1 2 3 1.5 2.8 ±0.2 The µPA1911 is a switching device which can be driven

MAX5360NEUK

Abstract: MAX5360 MAX5360LEUK MAX5360MEUK MAX5360PEUK MAX5361 MAX5361LEUK MAX5361MEUK MAX5362
Contextual Info: 19-1785; Rev 2; 3/11 Low-Cost, Low-Power 6-Bit DACs with 2-Wire Serial Interface in SOT23 Package The MAX5360/MAX5361/MAX5362 are low-cost, 6-bit digital-to-analog converters DACs in miniature 5-pin SOT23 packages with a simple 2-wire serial interface that allows communication with multiple devices. The

LT 5251

Abstract: DYNSLT ON5292 vn 530 sp 31 x 132 SC41-5715-00 BA 59 04 AFP LT 542 seven segment display data sheet 7 segment display LT 542 SST 90A 6B Diode NBR4
Contextual Info: AS/400e DDS Reference Version 4 AS/400e DDS Reference Version 4 Copyright International Business Machines Corporation 1999, 2000. All rights reserved. US Government Users Restricted Rights – Use, duplication or disclosure restricted by GSA ADP Schedule Contract

2SJ557

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ557 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION FEATURES 3 1.5 • Can be driven by a 4 V power source • Low on-state resistance RDS(on)1 = 155 mΩ MAX. (VGS = –10 V, ID = –1.0 A)

PA1813

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

D1380

Abstract: 2SK3107 SC-75
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

PA611TA

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SK2857

Abstract: D1164
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Transistor TT 2246

Abstract: TT 2206 datasheet apm 4906 TT 2206 transistor tt 2206 tt 2246 bt 7377 SOT-23 AAAA bc 5478 AAXZ
Contextual Info: SOT TOPMARKS: 2 and 4 Letter ID Coding SOT Topmarks − April 24, 2005 Sorted By Part Number Sorted By Topmark Part Prefix Number Suffix Topmark Package Part Prefix Number Suffix Topmark Package LM 4040A EM3−2.1 FZNG 3/SOT−23 MAX 1916 ZT 1111 6/SOT−23

jd 1801 data sheet

Abstract: AAAM SOT23-6 ABAA sot23 SOT23-6 JD 1801 fm 4213 ic AAHB LM 1117 bs33 SOT23-6 AAFQ
Contextual Info: SOT TOPMARKS: 2 and 4 Letter ID Coding SOT Topmarks − August 31, 2003 Sorted By Part Number Sorted By Topmark Part Prefix Number Suffix Topmark Package Part Prefix Number Suffix Topmark Package LM 4040A IM3−2.1 FZEF SOT23−3 MAX 809L UR AA SOT23−3 LM

Contextual Info: DATA S H EE T MOS FIELD EFFECT TRANSISTOR 2SK2858 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The 2SK2858 is a switching device which can be driven directly by a 2.1 ± 0.1 2.5-V power source. 1.25 ± 0.1

Contextual Info: CHAPTER 22 INTERRUPT FUNCTIONS The ¿¿PD784038 is provided with three interrupt request service modes see Table 22-1 . These three service modes can be set as required in the program. However interrupt service by macro service can only be selected for interrupt request

Contextual Info: DATA S H EE T MOS FIELD EFFECT TRANSISTOR 2SK3107 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The 2SK3107 is a switching device which can be driven directly by a 0.3 ±0.05 2.5-V power source. The 2SK3107 has excellent switching characteristics, and is suitable for

UPA1856GR

Abstract: PA1856 PA1856GR-9JG
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1856 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The µPA1856 is a switching device which can be driven directly by a 2.5 V power source. The µPA1856 features a low on-state resistance and

Contextual Info: DATA S H EE T MOS FIELD EFFECT TRANSISTOR _¿ ¿ P A 1 9 1 4 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The JUPA1914 is a switching device which can be driven directly by a 4 V power source.

toshiba laptop schematic diagram

Abstract: acer motherboard circuit diagram MAX1270 C source code MAX11871 mp 9141 es dc-dc lm324 pwm speed motor 220v DC MOTOR SPEED CONTROLLER schematic ACER laptop schematic diagram L-band down converter for satellite tuner wideband acer laptop MOTHERBOARD Chip Level MANUAL acer laptop motherboard circuit diagram
Contextual Info: Welcome to the Maxim Full-Line Data Catalog. We hope you find this CD-ROM a helpful tool for selecting the best Maxim IC for your design. This CD-ROM contains: The Maxim Full-Line Data Catalog The menu to the left of this page lists the available documents. Use the small

d1273

Abstract: PA1851
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1851 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1851 is a switching device which can be driven directly by a 4.0-V power source. The µPA1851 features a low on-state resistance and

nec 2412

Abstract: PA1801
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1801 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The µPA1801 is a switching device which can be driven directly by a 2.5-V power source. The µPA1801 features a low on-state resistance and

PA1813

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1813 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1813 is a switching device which can be driven directly by a 2.5-V power source. The µPA1813 features a low on-state resistance and

2SK2858

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2858 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The 2SK2858 is a switching device which can be driven directly by a 2.1 ± 0.1 0.3 +0.1 –0 2.5-V power source.

TM1153

Abstract: mPD784216 sony 1435 diagram
Contextual Info: mPD784054 16-BIT SINGLE-CHIP MICROCONTROLLERS PRELIMINARY HARDWARE VOLUME Document No. U11719EJ1V0UM00 (1st edition) Date Published October 1996 P Printed in Japan 1994 1996 NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and

rg4 37

Abstract: IE-78K4-NS CY317
Contextual Info: User’s Manual mPD784054 16-bit Single-chip Microcontrollers Hardware mPD784054 mPD784054 A mPD784054(A1) mPD784054(A2) Document No. U11719EJ2V0UM00 (2nd edition) Date Published February 1998 N CP(K) 1996 Printed in Japan 1 [MEMO] 2 NOTES FOR CMOS DEVICES

PA1913

Abstract: UPA1913TE
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1913 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION FEATURES 0.16+0.1 –0.06 +0.1 0.65–0.15 0.32 +0.1 –0.05 • Can be driven by a 2.5 V power source • Low on-state resistance