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    Design Considerations for the SST FlashFlex51 Family Microcontroller

    Abstract: Actron endrich Oasis actron international 6812 microcontroller NORTH AMERICA SALES AND DISTRIBUTION Northern Design Electronics Thorson Pacific 522-1150
    Contextual Info: Design Considerations for the SST FlashFlex51 Family Microcontroller Application Note August 1999 1.0 INTRODUCTION • The following design considerations outline applications of generally accepted PCB design practices to prevent data corruption issues that could be encountered when


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    FlashFlex51 SST89F54/58 Design Considerations for the SST FlashFlex51 Family Microcontroller Actron endrich Oasis actron international 6812 microcontroller NORTH AMERICA SALES AND DISTRIBUTION Northern Design Electronics Thorson Pacific 522-1150 PDF

    32107

    Abstract: SST27SF256 oasis TTL 7452 A115 32-PIN A103 A114 Tekelec TA 27721
    Contextual Info: 256 Kilobit 32K x 8 SuperFlash MTP SST27SF256 Preliminary Specifications FEATURES: • 5.0V Read Operation (4.5V to 5.5V) • Superior Reliability – Endurance: At least 1000 Cycles – Greater than 100 years Data Retention • Low Power Consumption – Active Current: 20 mA (typical)


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    SST27SF256 SST27SF256 32107 oasis TTL 7452 A115 32-PIN A103 A114 Tekelec TA 27721 PDF

    oasis

    Abstract: 32-PIN A103 A114 A115 SST27SF020 90-3C-PH 2t926
    Contextual Info: 2 Megabit 256K x 8 SuperFlash MTP SST27SF020 Preliminary Specifications FEATURES: • 5.0V Read Operation (4.5V to 5.5V) • Superior Reliability – Endurance: At least 1000 Cycles – Greater than 100 years Data Retention • Low Power Consumption – Active Current: 20 mA (typical)


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    SST27SF020 SST27SF020 oasis 32-PIN A103 A114 A115 90-3C-PH 2t926 PDF

    chn 348

    Abstract: CHN 314 chn 317 CHN 852 chn 440
    Contextual Info: 2 Megabit 256K x 8 SuperFlash MTP SST37VF020 Prelim inary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention


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    SST37VF020 32-Pin SST37VF020 chn 348 CHN 314 chn 317 CHN 852 chn 440 PDF

    CHN 345 X

    Contextual Info: 4 Megabit 512K x 8 SuperFlash MTP SST37VF040 Prelim inary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention


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    SST37VF040 32-Pin SST37VF040 CHN 345 X PDF

    SST39VF200-70-4C-EK

    Abstract: oasis SST39VF200 XX98 ST39VF200-90-4C-U1 SST39VF200-90-4C-EK SST39VF200-90-4I-EK
    Contextual Info: 2 Megabit 128K x 16-Bit Multi-Purpose Flash SST39VF200 Advance Information FEATURES: • Organized as 128K x16 • Single 2.7-3.6V Read and Write Operations • Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention


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    16-Bit) SST39VF200 SST39VF200-70-4C-EK oasis SST39VF200 XX98 ST39VF200-90-4C-U1 SST39VF200-90-4C-EK SST39VF200-90-4I-EK PDF

    TA 7644 BF

    Abstract: cmos power TCP 8108 NEXUS FLASH ERASE oasis TCP 8108 32-PIN F01A SST31LH041 830049
    Contextual Info: 4 Megabit Flash + 1 Megabit SRAM ComboMemory SST31LH041 Advance Information FEATURES: • Organized as 512K x 8 Flash + 128K x 8 SRAM • Latched Address and Data for Flash • Single 3.0-3.6V Read and Write Operations • Flash Fast Sector Erase and Byte Program:


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    SST31LH041 D16116 TA 7644 BF cmos power TCP 8108 NEXUS FLASH ERASE oasis TCP 8108 32-PIN F01A SST31LH041 830049 PDF

    CHN 512

    Abstract: CHN 314 1/CHN 852
    Contextual Info: 21Ü 512 Kilobit 64K x 8 Multi-Purpose Flash SST39SF512 Data Sheet FEATURES: • • • Organized as 64K X 8 Fast Sector Erase and Byte Program: Single 5.0V Read and Write Operations - Superior Reliability - • • Active Current: 20 mA (typical) Standby Current: 10 |iA (typical)


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    SST39SF512 CHN 512 CHN 314 1/CHN 852 PDF

    TEKELEC te 306

    Abstract: 30601
    Contextual Info: 2 Megabit 256K x 8 Page Mode EEPROM SST29EE020A / SST29LE020A / SST29VE020A Data Sheet FEATURES: • Single Voltage Read and Write Operations - • • Fast Read Access Time: 120 and 150 ns - 5.0V-only for the SST29EE020A 3.0-3.6V for the SST29LE020A 2.7-3.6V for the SST29VE020A


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    SST29EE020A SST29LE020A SST29VE020A Reliability526-1102 TEKELEC te 306 30601 PDF

    27721

    Contextual Info: iiili 16 Megabit 2M x 8-Bit Multi-Purpose Flash _ SST39VF016Q_ Advance Information FEATURES: • Organized as 2 M X 8 • Latched Address and Data • Single 2.7-3.6V Read and Write Operations • Fast Sector Erase and Byte Program:


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    SST39VF016Q_ SST39VF016Q Multi58-4276 27721 PDF

    Contextual Info: 512 Kilobit 64K x 8 Page Mode EEPROM SST29EE512A / SST29LE512A / SST29VE512A Data Sheet FEATURES: • Single Voltage Read and Write Operations - 5.0V-only for SST29EE512A - 3.0-3.6V for SST29LE512A - 2.7-3.6V for SST29VE512A • Superior Reliability - Endurance: 100,000 Cycles (typical)


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    SST29EE512A SST29LE512A SST29VE512A SST29EE512A SST29LE512A SST29EE512A/29LE512A/29VE512A PDF

    oasis

    Abstract: 29VE020 SST29EE020 SST29LE020 SST29VE020 ms-1307
    Contextual Info: 2 Megabit 256K x 8 Page Mode EEPROM SST29EE020 / SST29LE020 / SST29VE020 Data Sheet FEATURES: • Single Voltage Read and Write Operations – 5.0V-only for the SST29EE020 – 3.0-3.6V for the SST29LE020 – 2.7-3.6V for the SST29VE020 • Superior Reliability


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    SST29EE020 SST29LE020 SST29VE020 SST29EE020 SST29LE020 SST29EE020/29LE020/29VE020 oasis 29VE020 SST29VE020 ms-1307 PDF

    NEXUS FLASH ERASE

    Abstract: 353 flash oasis 32-PIN F01A SST31LH021 31LH021
    Contextual Info: 2 Megabit Flash + 1 Megabit SRAM ComboMemory SST31LH021 Advance Information FEATURES: • Organized as 256K x8 flash + 128K x8 SRAM • Latched Address and Data for Flash • Single 3.0-3.6V Read and Write Operations • Flash Fast Sector-Erase and Byte-Program:


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    SST31LH021 ye498404 NEXUS FLASH ERASE 353 flash oasis 32-PIN F01A SST31LH021 31LH021 PDF

    actron ab

    Abstract: 11a18 CHN 949 VF800
    Contextual Info: 21Ü 8 Megabit 512K x 16-Bit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information FEATURES: • Organized as 512 K X 16 • Single 2.7-3.6V Read and Write Operations • V • • Endurance: 100,000 Cycles (typical) Greater than 100 years Data Retention


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    16-Bit) SST39VF800Q SST39VF800 SST39VF800Q actron ab 11a18 CHN 949 VF800 PDF

    CHN 847

    Abstract: chn 734
    Contextual Info: 1 Megabit 128K x 8 Page Mode EEPROM SST29EE010 / SST29LE010 / SST29VE010 Data Sheet FEATURES: • Single Voltage Read and Write Operations - • • • - • Endurance: 100,000 Cycles (typical) Greater than 100 years Data Retention Low Power Consumption


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    SST29EE010 SST29LE010 SST29VE010 and-1102 CHN 847 chn 734 PDF

    Contextual Info: 512 Kbit /1 Mbit / 2 Mbit / 4 Mbit High Speed Multi-Purpose Flash SST39LH512 / SST39LH010 / SST39LH020 / SST39LH040 Advance Information FEATURES: • • • Organized as 64K x8/ 128K x8/ 256K x8/ 512K x8 Superior Reliability Uniform 4 KByte sectors Fast Read Access Time:


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    SST39LH512 SST39LH010 SST39LH020 SST39LH040 SST39LH010 PDF

    Ff-352

    Abstract: Ff352 HE 301 chn 511 CHN 549 chn 440
    Contextual Info: 16 Megabit 1M x 16-Bit High Speed Multi-Purpose Flash SST39LH160Q / SST39LH160 Advance Information FEATURES: • Organized as 1 M X 16 • Latched Address and Data • Single 3.0-3.6V Read and Write Operations • Fast Sector Erase and Word Program: •


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    16-Bit) SST39LH160Q SST39LH160 SST39LH160Q Ff-352 Ff352 HE 301 chn 511 CHN 549 chn 440 PDF

    Equivalent of sw2 354

    Abstract: sw2 354 8080 microprocessor Architecture Diagram cmos power TCP 8108 oasis F-173
    Contextual Info: 8 Megabit Flash + 2 Megabit SRAM ComboMemory SST32LH802 Advance Information FEATURES: • Organized as 512K x16 Flash + 128K x16 SRAM or 512K x8 x2 Flash + 128K x8 x2 SRAM • Single 3.0-3.6V Read and Write Operations • Concurrent Operation – Read from or write to SRAM while


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    SST32LH802 Sec498404 Equivalent of sw2 354 sw2 354 8080 microprocessor Architecture Diagram cmos power TCP 8108 oasis F-173 PDF

    houston tech

    Abstract: pelco Taiwan Oasis Enterprise Co., LTD 221212 datasheet and application 7217 eprom UV eraser NEXUS FLASH ERASE oasis taiwan oasis SST superflash
    Contextual Info: SST’s MTP Products A Superior Alternative to EPROM and Low Functionality Flash Application Note 1.0 Introduction MTP is a Many-Time Programmable low cost flash memory. The MTP combines the electrical erasability of flash and the cost effectiveness of EPROM. SST designed the MTP products, a low cost NVM, by reducing


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    PDF

    Contextual Info: 21Ü 2 Megabit Flash + 1 Megabit SRAM ComboMemory _ SST31LH021_ Advance Information FEATURES: • Organized as 256K x 8 flash + 128K x 8 SRAM • Single 3.0-3.6V Read and Write Operations Flash Fast Sector Erase and Byte Program:


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    SST31LH021_ PDF

    F0513 t

    Contextual Info: FlashFlex51 MCU SST89F54 / SST89F58 Prelim inary Specifications FEATURES: • 8051 Compatible Multi-Purpose 8-bit Microcontroller Unit MCU with Embedded SuperFlash Memory for Design Flexibility Support External Address Range up to 64 KByte of Program and Data Memory


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    FlashFlex51 SST89F54 SST89F58 16-bitTimer/Counters 128-Byte F0513 t PDF

    29EE010

    Abstract: CI 7446 29LE010 SST29EE010 SST29LE010 SST29VE010 29EE010-120 29EE010-90 Taiwan Oasis Enterprise Co., LTD
    Contextual Info: 1 Megabit 128K x 8 Page Mode EEPROM SST29EE010, SST29LE010, SST29VE010 Data Sheet FEATURES: • Single Voltage Read and Write Operations – 5.0V-only for the 29EE010 – 3.0V-only for the 29LE010 – 2.7V-only for the 29VE010 • Superior Reliability – Endurance: 100,000 Cycles (typical)


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    SST29EE010, SST29LE010, SST29VE010 29EE010 29LE010 29VE010 29EE010 CI 7446 29LE010 SST29EE010 SST29LE010 SST29VE010 29EE010-120 29EE010-90 Taiwan Oasis Enterprise Co., LTD PDF

    i87C51

    Abstract: atmel AT89C52 PROGRAMMER I87C54 microtek inverter circuit i87C51FB i87C58 oasis TTL 7452 SST89C54 SST89C58
    Contextual Info: FlashFlex51 MCU SST89C54 / SST89C58 / SST89C59 Preliminary Specifications FEATURES: • Multi-Purpose 8-bit 8051 Compatible Microcontroller Unit with Embedded SuperFlash Memory for Flexibility • Three 16-bit Timer/Counter • Programmable Serial Port UART


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    FlashFlex51 SST89C54 SST89C58 SST89C59 16-bit 128-byte 64-byte i87C51 atmel AT89C52 PROGRAMMER I87C54 microtek inverter circuit i87C51FB i87C58 oasis TTL 7452 PDF

    QFP 87c51

    Abstract: intel 87C51 INSTRUCTION SET Taiwan Oasis Enterprise Co., LTD SST89C59 Atmel 8051 Microcontrollers SST89C54-33I-NJ-XXXX LQFP-44 PLCC-44 SST89C54 SST89C58
    Contextual Info: FlashFlex51 MCU SST89C54 / SST89C58 / SST89C59 Preliminary Specifications FEATURES: • Multi-Purpose 8-bit 8051 Compatible Microcontroller Unit with Embedded SuperFlash Memory for Flexibility • Three 16-bit Timer/Counter • Programmable Serial Port UART


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    FlashFlex51 SST89C54 SST89C58 SST89C59 16-bit 128-byte 64-byte QFP 87c51 intel 87C51 INSTRUCTION SET Taiwan Oasis Enterprise Co., LTD SST89C59 Atmel 8051 Microcontrollers SST89C54-33I-NJ-XXXX LQFP-44 PLCC-44 PDF