ACTB Search Results

msp430g2553

Abstract: MP3 playback from microSD card Voice recording VOICE msp430 TMS320C5535 MSP430G2553IN20 Texas Instruments LaunchPad MSP430G2 Automotive Proximity and Touch Sensor
Contextual Info: C5000 Ultra-Low-Power DSP Audio Capacitive Touch BoosterPack Product Bulletin For MSP430™ Value Line LaunchPad Development Kit The Audio Capacitive Touch BoosterPack ACTBP is a plug-in board for the LaunchPad development kit and MSP430 Value Line microcontrollers. The kit offers a complete

Contextual Info: 604n T p H O Ä -n eH T O Ä Triode-pentode T p H o a -n e H T o a 6 0 4 1 1 n p e flH a 3 H a q e H : n e H T O f lH a a acTb — äjih paöoTbi b BbixOÄHbix K acK a^ax BHfleoycHjiHTejieft h Y H 1!; TpHOflHan ^acTb — b pa3JinqHbix uenHx A P y h b KaqecTBe npeflBapHTejibHoro

K140MA1

Abstract: K190KT2 K174YH7 K554CA2 k159ht1 hj3h 190KT2 transistor k513 K190KT1 K159
Contextual Info: HHfErPAIIbHbli NHKPOCXENbl INTEGRATED MICROCIRCUITS MHTETPAJlbHblE MklKPOCXEMbl IN TEG R A TED M ICRO CIRCU ITS M acTb Partii II AH AJIOrOBblE M HTETPAJlbHblE MklKPOCXEM bl IN TEGRATED ANALOG M ICRO CIRCUITS 3 ne«TpoHHan npoHbim neMHocTb C C C P - oamh mi xpynHeHuiHX b MMpe npoMJBOAHTeneü BbicoKoxanecTBeHHbix M3 AenMM jneKTpoHHoM tcxhm km , KoTopbie b HaCToMLijee sperm

W9425G6JH

Contextual Info: W9425G6JH 4 M  4 BANKS  16 BITS DDR SDRAM Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4

Q67221-H

Abstract: Q67221H
Contextual Info: Product Brochure for NTC-Q 11/97 Network Termination Controller NTC-Q PEB / PEF 8091 The Network Termination Controller NTC-Q is a Network Termination (NT) circuit for the basic rate ISDN. It combines a U-transceiver and an STranceiver on one chip. The NTC-Q provides the 2B1 Q-U-interface together

DFSDM

Abstract: SAM9M10 K 2141 AC97 ARM926EJ-S AT91SAM ISO7816 NBC 3111 hc 541 rfid reader id-20
Contextual Info: Features • 400 MHz ARM926EJ-S ARM Thumb® Processor – 32 KBytes Data Cache, 32 KBytes Instruction Cache, MMU • Memories • • • • – DDR2 Controller 4-bank DDR2/LPDDR, SDR/LPSDR – External Bus Interface supporting 4-bank DDR2/LPDDR, SDR/LPSDR, Static

hyundai rdram

Abstract: REF05
Contextual Info: HYRDU64164 / HYRDU72184 Series 64/72Mbit Direct RDRAM • HYUNDAI Advanced Information O verview The Direct Rambus™ DRAM Direct RDRAM™ is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and

STM32W108

Abstract: STM32W STM32W108 datasheet STM32W108 register PB00X AN2606 stm32 timer stm32 pwm AES128 stm32w pwm STM32W108 zigbee user manual
Contextual Info: STM32W108HB STM32W108CB High-performance, IEEE 802.15.4 wireless system-on-chip Preliminary data Features • ■ ■ ■ Complete system-on-chip – 32-bit ARM Cortex -M3 processor – 2.4 GHz IEEE 802.15.4 transceiver & lower MAC – 128-Kbyte Flash, 8-Kbyte RAM memory

Contextual Info: ARM-based Embedded MPU SAM9G35 DATASHEET Description The SAM9G35 is a member of the Atmel series of 400 MHz ARM926EJ-S embedded MPUs that support high bandwidth communication and advanced user interfaces and are optimized for industrial applications such as building automation,

TC59WM815BFT

Abstract: TC59WM803BFT TC59WM807BFT Selex
Contextual Info: TC59WM815/07/03BFT-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS x 4 BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDS × 4 BANKS × 8-BITS SYNCHRONOUS DYNAMIC RAM 16,777,216-WORDS × 4 BANKS × 4-BITS SYNCHRONOUS DYNAMIC RAM

SICAN

Abstract: PEB3265 Common Mode Choke 85u0 PEF 4265 PEF 80912 SAFETY AWT 1 11 C513 PEB2023 PEF81902
Contextual Info: Da ta S h ee t, D S 1, N ov . 20 01 T - S M I NT I X 4B3 T S e co n d G e n . M od ul ar I S D N N T I nt e ll ige n t e X t e nd e d PEF 81902 Version 1.1 Wired C o m m u n i ca t i o n s N e v e r s t o p t h i n k i n g . Edition 2001-11-12 Published by Infineon Technologies AG,

MIG toshiba

Abstract: ABB B45 THMR1E16-6 THMR1E16-7 B75 ABB hiab 837 B34 toshiba mig
Contextual Info: TOSHIBA THMR1E16-6/-7/-8 TO SH IBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 134,217,728-WORD BY 18-BIT 256M Bytes Direct Rambus DRAM MODULE DESCRIPTION The THMR1E16 is a 134,217,728-word by 18-bit direct rambus dynamic RAM module consisting of 8 TC59RM718MB and 8 TC59M718RB Direct Rambus DRAMs on a printed circuit board.

da53

Abstract: HY5R128HC745 HY5R128HC840 HY5R128HC845 HY5R144HC653 HY5R144HC745 HY5R144HC840 HY5R144HC845 HY5R144HM745 HY5R144HM845
Contextual Info: Direct RDRAM 128/144Mbit 256Kx16/18x32s Preliminary Overview The Rambus Direct RDRAM™ is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and

PEB 4266 T V1.2

Abstract: convert 230V AC to 5V DC without transformer PEF 3304 BSP135 transformer from 230V AC to 5V DC 230v ac to -48v dc converter 230V AC to 5V DC ic CNY 42 optocoupler relay for controlling 230v ac using 5v dual falc
Contextual Info: ICs for Communications Intelligent Network Termination Solution Guide for Intelligent Network Termination HL Solution Guide 04.99 DS 1 Revision History: Current Version: 04.99 Previous Version: - Page Page in previous (in current Version Version) Subjects (major changes since last revision)

dba1

Abstract: MS82V16520 QFP100-P-1420-0
Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.

W942508AH

Abstract: W942516AH
Contextual Info: Preliminary W942516AH 4M x 4 BANKS × 16 BIT DDR SDRAM Table of Contents1. GENERAL DESCRIPTION .3 2. FEATURES .3

Contextual Info: Specifications • Contacts: phosphor bronze, standard; bare CDA 725, optional • Contact Plating: 30/j. in. gold in mating area over 5 0 ^ in. nickel, standard: 10n in. gold (in mating area) over 50ju in. nickel, optional; 50¡x in. gold (in mating area) over 50p. in. nickel, optional; 100ju in. tin-lead,

W942504AH

Abstract: W942508AH W942516AH
Contextual Info: Preliminary W942504AH 16M x 4 BANKS × 4 BIT DDR SDRAM Table of Contents1. GENERAL DESCRIPTION .3 2. FEATURES .3

toshiba a75

Abstract: ejdalf
Contextual Info: TOSHIBA THMR1E8-6/-7/-8 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108.864-WORD BY 18-BIT 128M Bytes Direct Rambus DRAM MODULE DESCRIPTION The THMR1E8 is a 67,108,864-word by 18-bit direct rambus dynamic RAM module consisting of 8 TC59RM718MB Direct Rambus DRAMs on a printed circuit board.

TC59RM716GB

Abstract: 9T20T
Contextual Info: TOSHIBA TEN TA TIVE T O S H IB A M O S DIGITAL IN T E G R A T E D C IR C U IT TC59RM716GB-8 SILIC O N M O N O LIT H IC Overview T he D irect R am bus D R A M D irect R D R A M ™ is a general-purpose high perform ance m em ory device suitable for use in a broad ra n g e of applications including com puter memory, graphics, video a n d any o th er applications

Contextual Info: Doc No. TA4-EA-05346 Revision. 2 Product Standards AN32155B http://www.semicon.panasonic.co.jp/en/ 43 Matrix LED Driver IC with Step-up Charge Pump Control Circuit FEATURES DESCRIPTION • 4 x 3 LED Matrix Driver Total LED that can be driven = 12 AN32155B is a 4 x 3 LED driver equipped with a

rca ca 3079

Abstract: RCA 3079 MS82V48540 MS82V48540-7 MS82V48540-8 MT53B768M32D4NQ-053 WT:B
Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

reflex klystron

Abstract: klystron x 13 m54401 Klystrons reflex klystron M54402 klystron KHY-122 M54204 klystron reflex wc 218 waveguide
Contextual Info: MICROWAVE TUBES & MODULES CBM DPHBO Pbl H M O flY flH i Electron Device Mfg. Corp. nO flCHEHHfl K 0 B0 3 H AM EH M il M H 3HAKAM S Y M B O L S & CODE E X P L A IN E D KjIHCTpOHbl K ly stro n s 4 -) # AHana30H nepeKpuBaeTca AByMH HJIH HeCKOJl bKHMH lipH6opaMH

2T931A

Abstract: KT853 2T926A KT838A 2T803A 2T809A 2T904A 2T808A 2T603 2T921A
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