ACPR600 Search Results

LPC2148 i2c

Abstract: BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent
Contextual Info: Building blocks for vibrant media Highlights of the NXP product portfolio Building blocks for vibrant media  At NXP Semiconductors, the new company founded by Philips, we’re driven by a single purpose — to deliver vibrant media technologies that create better sensory experiences.

transistor 1892

Abstract: ACPR400 ACPR600 BLC6G20-75 BLC6G20LS-75
Contextual Info: BLC6G20-75; BLC6G20LS-75 UHF power LDMOS transistor Rev. 01 — 30 January 2006 Objective data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1: Typical performance

BLF7G20L-90P

Abstract: 1800 ldmos BLF7G20LS-90P RF35 PLW70
Contextual Info: BLF7G20L-90P; BLF7G20LS-90P Power LDMOS transistor Rev. 01 — 28 April 2010 Product data sheet 1. Product profile 1.1 General description 90 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance

BLF7G20LS-140P

Abstract: 850 SMD Rework Station RF35
Contextual Info: BLF7G20LS-140P Power LDMOS transistor Rev. 2 — 17 August 2010 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance

16PIN

Abstract: ACPR600 CXG1030N pin diagram 1K variable resistor C41P
Contextual Info: CXG1030N Power Amplifier for PHS For the availability of this product, please contact the sales office. Description The CXG1030N is a power amplifier for PHS. This IC is designed using the Sony’s GaAs J-FET process and operates at a single power supply.

Contextual Info: CXG1051AFN Power Amplifier/Antenna Switch + Low Noise Down Conversion Mixer for PHS Description The CXG1051AFN is an MMIC consisting of the power amplifier, antenna switch and low noise down conversion mixer. This IC is designed using the Sony's GaAs J-FET

Contextual Info: CXG1053FN Power Amplifier/Antenna Switch + Low Noise Amplifier/Down Conversion Mixer for PHS For the availability of this product, please contact the sales office. Description The CXG1053FN is an MMIC consisting of the power amplifier, antenna switch, low noise amplifier

ph98

Abstract: 597 smd transistor smd code HF transistor 2222-581 ACPR300 ACPR600 ACPR900 BLF3G21-30 PH98072 ph-98
Contextual Info: BLF3G21-30 UHF power LDMOS transistor Rev. 01 — 14 February 2007 Product data sheet 1. Product profile 1.1 General description 30 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz. Table 1. Typical class-AB RF performance

CXG1096FN

Abstract: 35dBm EIAJ 26-Pin
Contextual Info: CXG1096FN Power Amplifier/Antenna Switch + Low Noise Down Conversion Mixer for PHS Description The CXG1096FN is an MMIC consisting of the power amplifier, diversity antenna supported switch and low noise down conversion mixer. This IC is designed using the Sony's GaAs J-FET

philips Electrolytic Capacitor

Abstract: blf4g20-110b ACPR400 ACPR600 BLF4G20S-110B RF35 Philips Electrolytic
Contextual Info: BLF4G20-110B; BLF4G20S-110B UHF power LDMOS transistor Rev. 01 — 23 January 2006 Product data sheet 1. Product profile 1.1 General description 110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1: Typical performance

SmD TRANSISTOR a75

Contextual Info: BLF7G20LS-140P Power LDMOS transistor Rev. 2 — 17 August 2010 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance

sony power amplifier

Contextual Info: SONY CXG1030N Power Amplifier for PHS Description 16 pin SSOP Plastic The CXG1030N is a power amplifier for PHS. This IC is designed using the Sony’s GaAs J-FET process and operates at a single power supply. Features • Output power 21 dBm • Positive power supply

CXG1051AFN

Abstract: 12IFR
Contextual Info: CXG1051AFN Power Amplifier/Antenna Switch + Low Noise Down Conversion Mixer for PHS Description The CXG1051AFN is an MMIC consisting of the power amplifier, antenna switch and low noise down conversion mixer. This IC is designed using the Sony's GaAs J-FET

Contextual Info: CXG1096FN Power Amplifier/Antenna Switch + Low Noise Down Conversion Mixer for PHS For the availability of this product, please contact the sales office. Description The CXG1096FN is an MMIC consisting of the power amplifier, diversity antenna supported switch

CXG1053FN

Contextual Info: CXG1053FN Power Amplifier/Antenna Switch + Low Noise Amplifier/Down Conversion Mixer for PHS Description The CXG1053FN is an MMIC consisting of the power amplifier, antenna switch, low noise amplifier and down conversion mixer. This IC is designed using the Sony's GaAs J-FET

2 LOIF

Abstract: CXG7001FN rf23 12IFR HSOF-26P
Contextual Info: CXG7001FN PHS用パワーアンプ／アンテナスイッチ＋ローノイズダウンコンバージョンミキサ 概 要 CXG7001FNは，ソニーGaAs J-FETプロセスによる 単一正電源動作を特長としたPHS用パワーアンプ／ アンテナスイッチ, ローノイズダウンコンバージョン

rario

Abstract: CXG1051AFN
Contextual Info: CXG1051AFN Power Amplifier/Antenna Switch + Low Noise Down Conversion Mixer for PHS Description The CXG1051AFN is an MMIC consisting of the power amplifier, antenna switch and low noise down conversion mixer. This IC is designed using the Sony's GaAs J-FET

m 110b1

Abstract: ACPR400 ACPR600 BLF4G20LS-110B RF35 PHILIPS GSM I Q
Contextual Info: BLF4G20LS-110B UHF power LDMOS transistor Rev. 01 — 10 January 2006 Product data sheet 1. Product profile 1.1 General description 110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1: Typical performance

transistor 2N2222 SMD

Abstract: capacitor 2200 uF smd transistor l6 2n2222 smd 2n2222 smd transistor L5 smd transistor TRANSISTOR SMD L3 GP 0,47K w2 smd transistor ACPR1980
Contextual Info: BLF4G10LS-160 UHF power LDMOS transistor Rev. 01 — 19 June 2007 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance

sony transmitter

Abstract: CXG7001FN
Contextual Info: CXG7001FN Power Amplifier/Antenna Switch + Low Noise Down Conversion Mixer for PHS Description The CXG7001FN is a MMIC consisting of the power amplifier, antenna switch and low noise down conversion mixer. This IC is designed using the Sony’s GaAs J-FET

Contextual Info: CXG1051AFN Power Amplifier/Antenna Switch + Low Noise Down Conversion Mixer for PHS Description The CXG1051AFN is an MMIC consisting of the power amplifier, antenna switch and low noise down conversion mixer. This IC is designed using the Sony's GaAs J-FET

Contextual Info: CXG1015N Power Amplifier/Antenna Switch for PHS For the availability of this product, please contact the sales office. Description The CXG1015N is a power amplifier/antenna switch MMIC for PHS. This is designed using the Sony’s GaAs J-FET process and operates at a

smd code HF transistor

Abstract: BLF3G21-6
Contextual Info: BLF3G21-6 UHF power LDMOS transistor Rev. 01 — 25 June 2008 Product data sheet 1. Product profile 1.1 General description 6 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz Table 1. Typical class-AB RF performance

Contextual Info: BLF7G20L-160P; BLF7G20LS-160P Power LDMOS transistor Rev. 01 — 22 June 2010 Objective data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance