ACPR2 Search Results

PCC103BCT-ND

Abstract: capacitor siemens 4700 35 DD 102 CAPACITOR Siemens Ferrite PA13 0.1 uF 50v CAPACITOR
Contextual Info: PRELIMINARY PTF 102015* GOLDMOS Field Effect Transistor 30 Watts, 2110-2170 MHz Description WCDMA Performance 20 V DS = 28 V IDQ = 320 mA f C = 2170 Efficiency % x 16 -20 12 -35 Efficiency ACPR1 (FC + 5 MHz) 8 -50 4 ACPR2 (FC + 10 MHz) 0.5 1 1.5 2 2.5

DD 102 CAPACITOR

Abstract: PA13 transistor 200 watt 28 v 0-30 mhz PCC103BCT-ND PCC103B
Contextual Info: PRELIMINARY PTF 102015* GOLDMOS Field Effect Transistor 30 Watts, 2110-2170 MHz Description WCDMA Performance 20 V DS = 28 V IDQ = 320 mA f C = 2170 Efficiency % x 16 -20 12 -35 Efficiency ACPR1 (FC + 5 MHz) 8 -50 4 ACPR2 (FC + 10 MHz) 0.5 1 1.5 2 2.5

PTF 102015

Abstract: PCC103BCT-ND 0.1 uF 50v CAPACITOR DD 102 CAPACITOR
Contextual Info: PRELIMINARY PTF 102015* GOLDMOS Field Effect Transistor 30 Watts, 2110-2170 MHz Description WCDMA Performance 20 V DS = 28 V IDQ = 320 mA f C = 2170 Efficiency % x 16 Efficiency -20 12 -35 ACPR1 (FC + 5 MHz) 8 -50 4 ACPR2 (FC + 10 MHz) 0.5 1 1.5 2 2.5

power amplifier rf

Abstract: "docsis 3.0" TAT2814 J-STD-020 SAC305 TAT2814A
Contextual Info: TAT2814A DOCSIS 3.0 / Edge QAM Variable Gain Amplifier Applications • • Integrated DOCSIS 3.0 / Edge QAM RF Amplifier chain Forward path 45 – 1003 MHz variable-gain applications Product Features • • • • • • • • • • Meets DOCSIS 3.0 with +4 dB typical performance

Contextual Info: RF2681 Preliminary 4 W-CDMA LINEAR VARIABLE GAIN DRIVER AMPLIFIER Typical Applications • General Purpose Driver Amplifier Product Description The RF2681 is a linear variable gain amplifier specifically designed for PA driver applications in W-CDMA handsets.

RF35

Contextual Info: BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor Rev. 01 — 4 February 2009 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance

TRANSISTOR J601

Abstract: gp816 RF35 J2396 J249
Contextual Info: BLF6G38-10; BLF6G38-10G WiMAX power LDMOS transistor Rev. 01 — 3 February 2009 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical performance

7833 regulator pin diagram

Abstract: PN-15 65 MHZ - 125MHZ rf transmitter Sn60Pb40A ESGD3000A J-STD-006 REGULATOR 7833 8593E ACPM-7833 ACPM-7833-BLK
Contextual Info: Agilent ACPM-7833 CDMA1900 PCS Power Amplifier Module Data Sheet Features • Operating frequency: 1850 – 1910 MHz • 28.5 dBm linear output power @ 3.4 V • High efficiency: 40% PAE Description The ACPM-7833 is a fully matched CDMA Power amplifier module. Designed around Agilent

RMPA1951-102

Abstract: RO4003
Contextual Info: RMPA1951-102 RF Components 3V PCS CDMA Power Amplifier Module PRODUCT INFORMATION Description Features The RMPA1951-102 is a small-outline, power amplifier module PAM for CDMA Personal Communication System (PCS) and Wireless Local Loop (WLL) applications. Advanced DC power

bt 2323

Abstract: TX-2G
Contextual Info: AWL9966 802.11a/b/g/n WLAN/Bluetooth FEIC PRELIMINARY DATA SHEET - Rev 1.2 FEATURES • 3% Dynamic EVM @ POUT = +17 dBm with IEEE 802.11a 64 QAM OFDM at 54 Mbps • 3% Dynamic EVM @ POUT = +20 dBm with IEEE 802.11g 64 QAM OFDM at 54 Mbps • -30 dBc 1st Sidelobe / -50 dBc 2nd Sidelobe

phase shifter 2GHz

Abstract: SMV1235-074 TQ7M35 p8mi
Contextual Info: Preliminary: Subject to change without notice CELL_LO DA TQ7M35 PWR_UP CELL_A DA DA PCS_LO DATA SHEET DA VCNTRL Phase Shifter Phase Shifter ÷2 Phase Shifter TCXO 3V HBT SiGe CDMA Transmitter VCC_VGA VGA VGA VCC_LO CELL_B VCC_DRV PCS_B PCS_A VCC_IQ AB_SEL

BJT with i-v characteristics

Abstract: SSG TRANSISTOR 3362 motorola InP HBT transistor motorola 3362 SSG 23 TRANSISTOR ECG015 LL1608-F15NK MCH185A180JK MCH185A560JK
Contextual Info: PRELIMINARY DATA SHEET ECG015 BROADBAND HIGH OIP3 AMPLIFIER 1800 - 2500 MHz Features Applications n n n n 1800 to 2500 MHz Highly Reliable InGaP HBT Excellent Stability Multi-carrier Systems n High Linearity Amplifiers n Cellular, PCS, WLL Package Available

schematics for a PA amplifier

Abstract: RF2369 236640
Contextual Info: RF2369 Preliminary 4 3V LOW NOISE AMPLIFIER/ 3V PA DRIVER AMPLIFIER Typical Applications • CDMA/Cellular Bypass LNA • General Purpose Amplification • CDMA/Cellular Bypass Driver Amplifier • Commercial and Consumer Systems Product Description 1.80 1.40

GRM39Y5V104Z16V

Contextual Info: February 2005 RMPA1963 i-Lo US-PCS CDMA, CDMA2000-1X and WCDMA Power Amplifier Module Features General Description • 38% CDMA/WCDMA efficiency at +28 dBm Pout ■ 14% CDMA/WCDMA efficiency 85 mA total current at +16 dBm Pout ■ Linear operation in low-power mode up to +19 dBm

Contextual Info: RMPA0951AT 3V Cellular CDMA Power Amplifier Module General Description Features The RMPA0951AT is a dual mode, small-outline Power Amplifier Module PAM for Cellular CDMA personal communication system applications. The PA is internallymatched to 50Ω and DC blocked which minimizes the use

murata REEL label lot number

Abstract: TRANSISTOR SMD MARKING CODE WS ROHM polystyrene capacitor IPC-7711 ws1101 smd transistor marking da A423801A 23801A J-STD-020B J-STD-033
Contextual Info: !" PRELIMINARY DATASHEET WS1101 Power Amplifier Module for CDMA/AMPS 824-849MHz DATASHEET (DEVICE : WS1101, 3x3 CDMA/AMPS PAM) Issued Date : January 29 , 2005 S. W. Paek Director, Module Group 1 Preliminary Information WM0501-11 !" PRODUCT DESCRIPTION WS1101

Practical statistical simulation for efficient circuit design

Abstract: kopin
Contextual Info: P1: SFK Trim: 247mm x 174mm CUUK1544-09 9 CUUK1544/Fager Top: 12.653mm Design: Engg C Gutter: 16.871mm 978 0 521 76210 6 June 14, 2011 Practical statistical simulation for efficient circuit design Pete Zampardi, Yingying Yang, Juntao Hu, Bin Li, Mats Fredriksson,

CHP1237

Contextual Info: CHP1237 KPCS CDMA InGaP HBT Amplifier Module PRELIMINARY DATA SHEET - Rev 1.5 FEATURES • Small Profile 3 x 3 x 1 mm • PFTTM 50 Ω Matched Module • High Linearity of -50 dBc • High PAE of 39% • InGaP HBT Technology • Low Quiescent Current of 55 mA

SiGe 2528L

Abstract: SE2528L SE2525L ofdm signal qam circuit
Contextual Info: SE2528L 2.4 GHz Power Amplifier with Power Detector Applications Product Description • •  The SE2528L is a 2.4 GHz power amplifier designed for use in the 2.4 GHz ISM band for wireless LAN applications. The device incorporates two selectable power detectors for closed loop monitoring of the

Contextual Info: CXG1156K Power Amplifier Module for JCDMA For the availability of this product, please contact the sales office. Description The CXG1156K is the power amplifier module which operates at a single power supply. This IC is designed using the Sony’s original p-Gate HFET process.

Contextual Info: CXG1156K Power Amplifier Module for JCDMA Description The CXG1156K is the power amplifier module which operates at a single power supply. This IC is designed using the Sony’s original p-Gate HFET process. 10 pin LCC Ceramic Features • Single power supply operation:

SKY77761

Abstract: SKY77761-12
Contextual Info: PRELIMINARY DATA SHEET SKY77761-12 Power Amplifier Module for CDMA/ WCDMA/ HSDPA/ HSUPA/ HSPA+/ LTE – Band I 1920–1980 MHz Applications Description • WCDMA handsets The SKY77761-12 Power Amplifier Module (PAM) is a fully matched 10-pad surface mount module

Contextual Info: CXG1158K Power Amplifier Module for JCDMA For the availability of this product, please contact the sales office. Description The CXG1158K is the power amplifier module which operates at a single power supply. This IC is designed using the Sony's original p-Gate HFET process.

CX77154

Abstract: d435
Contextual Info: DATA SHEET SKY77149 PA Module for CDMA / PCS 1850–1910 MHz Applications • Personal Communications Services (PCS) • Wireless Local Loop (WLL) Features • Low voltage positive bias supply - 3.2 V to 4.2 V • Low VREF - 2.85 V, nominal • Low IREF