ACPR10M Search Results
ACPR10M Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
RF35Contextual Info: BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor Rev. 01 — 4 February 2009 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance |
Original |
blf6g27-10blf6g27-10gacpr885kacpr1980k+1 | |
TRANSISTOR J601
Abstract: gp816 RF35 J2396 J249
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blf6g38-10blf6g38-10gacpr885kacpr1980k+5 | |
BLF7G27LS-100
Abstract: BLF7G27L-100 ACPR1980 BLF7G27 flanged pin
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blf7g27l-100blf7g27ls-100acpr885kis-95+4 | |
150P
Abstract: BLF7G27LS-150P ACPR1980 ACPR885
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blf7g27l-150pblf7g27ls-150pis-95acpr885k+4 | |
BLF7G20L-90P
Abstract: 1800 ldmos BLF7G20LS-90P RF35 PLW70
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blf7g20l-90pblf7g20ls-90pacpr400kacpr600k+4 | |
BLF7G20LS-140P
Abstract: 850 SMD Rework Station RF35
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blf7g20ls-140pacpr400kacpr600k850 smd rework station+1 | |
J122 SMD TRANSISTOR
Abstract: BLC6G22L-40BN/2 800B BLF6G22L-40BN
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blf6g22l-40bnj122 smd transistorblc6g22l-40bn/2800b | |
BU 0603
Abstract: 800B BLF6G15L 029-KW
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blf6g15l-250pbrnbu 0603800bblf6g15l+1 | |
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Contextual Info: BLF6G15L-40RN; BLF6G15LS-40RN Power LDMOS transistor Rev. 2 — 14 May 2012 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance |
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blf6g15l-40rnblf6g15ls-40rn6g15ls-40rn | |
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Contextual Info: BLF6G27-100; BLF6G27LS-100 WiMAX power LDMOS transistor Rev. 01 — 3 May 2010 Preliminary data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance |
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blf6g27-100blf6g27ls-100acpr885kacpr1980k+1 | |
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Contextual Info: BLF7G27L-140; BLF7G27LS-140 Power LDMOS transistor Rev. 2 — 5 April 2011 Preliminary data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance |
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blf7g27l-140blf7g27ls-140is-95acpr885k+1 | |
sot1121a
Abstract: J226 SMD
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blf7g21l-160pblf7g21ls-160p7g21ls-160psot1121a+1 | |
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Contextual Info: BLF7G27L-135 Power LDMOS transistor Rev. 2 — 26 March 2012 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. |
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blf7g27l-135 | |
SmD TRANSISTOR a75Contextual Info: BLF7G20LS-140P Power LDMOS transistor Rev. 2 — 17 August 2010 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance |
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blf7g20ls-140pacpr400kacpr600ksmd transistor a75 | |
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Contextual Info: BLF6G22L-40BN Power LDMOS transistor Rev. 1 — 30 August 2010 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. |
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blf6g22l-40bn | |
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Contextual Info: BLF7G27L-140; BLF7G27LS-140 Power LDMOS transistor Rev. 3 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance |
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blf7g27l-140blf7g27ls-140acpr885kis-95+1 | |
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Contextual Info: BLF6G10L-40BRN Power LDMOS transistor Rev. 3 — 16 November 2010 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. |
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blf6g10l-40brn | |
ATC100B
Abstract: avx1206 BLF7G22L-130 BLF7G22LS-130 RO4350 transistor BC 185
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blf7g22l-130blf7g22ls-1307g22ls-130atc100b+3 | |
ACPR1980
Abstract: ACPR885
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blf6g27l-50bnblf6g27ls-50bn6g27ls-50bnacpr1980+1 | |
TRANSISTOR j412
Abstract: J412 - TRANSISTOR SMD BLF6G38S-25
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blf6g38-25blf6g38s-25acpr885kacpr1980k+3 | |
nxp power microwave transistor
Abstract: ACPR885 RF35 ACPR10
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blf6g27-75blf6g27ls-75acpr885kacpr1980k+6 | |
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Contextual Info: BLF7G22L-160; BLF7G22LS-160 Power LDMOS transistor Rev. 2.1 — 2 November 2011 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance |
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blf7g22l-160blf7g22ls-1607g22ls-160 | |
SMD transistor package code A64Contextual Info: BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor Rev. 3 — 28 February 2011 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz and 2500 MHz to 2700 MHz. |
Original |
blf6g27-10blf6g27-10gis-95acpr885k+2 | |
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Contextual Info: BLF7G27L-150P; BLF7G27LS-150P Power LDMOS transistor Rev. 1 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance |
Original |
blf7g27l-150pblf7g27ls-150pis-95acpr885k+1 | |