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CFU450

Abstract: TA31133FN TA31133 Murata BPF filter CAPACITOR 1000pf 25Q 328 CDB450C CDB450
Contextual Info: IF DETECT ICs TENTATIVE DATA FM IF DETECTOR 1C FOR CELLULAR PHONE FEATURES • 2 IF A M P circuits can limit a band w idth according to a usage. • IF A M P has high performance carrier detection RSSI . • Low current consumption • Operating supply voltage range : 2.7~6.0V

visible led classifications

Contextual Info: TOSHIBA [3 ] Explanations [3 ] Explanations 1. Toshiba Visible LEDs Toshiba visible LEDs are generally classified as follows according to their structure and intended use. -LED lamps : Lamps for display light source -LED displays : Numeric displays -LED dot m atrix modules : Display panels with built-in drivers

BZX85C

Contextual Info: Preliminary BZX85C SERIES 1.3 Watts Zener Diode Pb RoHS DO-41 COMPLIANCE Features — — — Silicon Planar Power Zener Diodes For use in stabilizing and clipping circuits with high power rating The Zener voltages are graded according to the international E24 standard. Replace suffix

MOSFET SOT-23 marking code M2

Contextual Info: Si2312BDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.031 at VGS = 4.5 V 5.0 0.037 at VGS = 2.5 V 4.6 0.047 at VGS = 1.8 V 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: T93 Vishay Sfernice 3/8" Square Multi-Turn Cermet Trimmer FEATURES • Industrial grade • 0.5 W at 70 °C • Tests according to CECC 41000 or IEC 60393-1 The T93 is a small size trimmer - 3/8" x 3/8" x 3/16" answering PC board mounting requirements. Five versions are available which differ by the position of the

Vishay DaTE CODE tsop-6

Abstract: si3410
Contextual Info: Si3410DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.0195 at VGS = 10 V 8 0.023 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC

Contextual Info: New Product Si7613DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0087 at VGS = - 10 V - 35 0.014 at VGS = - 4.5V - 35 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

IRFZ48 mosfet driver

Contextual Info: IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Dynamic dV/dt • 175 °C Operating Temperature • Fast Switching

SI4431CDY

Contextual Info: New Product Si4431CDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.032 at VGS = - 10 V - 9.0 0.049 at VGS = - 4.5 V - 5.8 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

si1922

Abstract: SI1922EDH
Contextual Info: Si1922EDH Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.198 at VGS = 4.5 V 1.3a 0.225 at VGS = 2.5 V 1.3a 0.263 at VGS = 1.8 V 1.3a VDS (V) 20 Qg (Typ.) 0.9 nC • Halogen-free According to IEC 61249-2-21

Contextual Info: VS-10ETF0.FPPbF Series, VS-10ETF0.FP-M3 Series www.vishay.com Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 10 A FEATURES Base cathode • 150 °C max. operation junction temperature • Designed and JEDEC-JESD47 2 qualified according to • Fully isolated package VINS = 2500 VRMS

95xxx

Abstract: si3434 si3495
Contextual Info: Si3495DV Vishay Siliconix P-Channel 20-V D-S , 1.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.024 at VGS = - 4.5 V -7 0.030 at VGS = - 2.5 V - 6.2 0.038 at VGS = - 1.8 V - 5.2 0.048 at VGS = - 1.5 V - 5.0 • Halogen-free According to IEC 61249-2-21

Contextual Info: Si4804BDY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.022 at VGS = 10 V 7.5 0.030 at VGS = 4.5 V 6.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized

TO-252AA Mechanical dimensions

Abstract: VS-50WQ04
Contextual Info: VS-50WQ04FN-M3 Vishay Semiconductors Schottky Rectifier, 5.5 A FEATURES Base cathode 4, 2 1 Anode D-PAK TO-252AA • Low forward voltage drop • Guard ring for enhanced ruggedness and long term reliability • Halogen-free according to IEC 61249-2-21 definition

V23074-A1002-A403

Abstract: V23074-A2002-A403 v23074-a1001 v23074-a1001-a402 V23074-A1002-A402 v23074-A1001-A403 V23074-A2001-A403 relay 12vdc with diode v23074 V23074-A2002-A402
Contextual Info: Automotive Relays Plug-in Micro ISO Relays Micro Relay A/VFMA n High current version with limiting continuous current 30A at 85°C assignment according to ISO 7588 part 3 n Customized versions on request – 24VDC versions with special contact gap – Integrated components e.g. diode

Contextual Info: SQ4940EY www.vishay.com Vishay Siliconix Automotive Dual N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.035 RDS(on) () at VGS = 4.5 V 0.055 ID (A)

Contextual Info: SQS464EEN www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • Typical ESD Protection 800 V • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd

SQS404EN-T1-GE3

Abstract: marking D3 TSOP-6 PPAK1212
Contextual Info: SQS404EN www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested

SQ2303ES

Abstract: marking code 604 SOT23
Contextual Info: SQ2303ES www.vishay.com Vishay Siliconix Automotive P-Channel 30 V D-S 175 °C MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC

SQ2318ES

Contextual Info: SQ2318ES www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested

Contextual Info: Silicon Technology Reliability www.vishay.com Vishay Siliconix N-CHANNEL ACCELERATED OPERATING LIFE TEST RESULT Sample Size 18 368 Equivalent Device Hours 2 954 669 261 Failure Rate in FIT 2.505 Failure Rate in FIT is calculated according to JEDEC Standard JESD85, Methods for Calculating Failure Rates in Units of FITs,

Contextual Info: SUP90N04-3m3P Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.0033 at VGS = 10 V 90 0.0041 at VGS = 4.5 V 90 VDS (V) 40 Qg (Typ.) 87 TO-220AB • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

MAR 826

Contextual Info: SQ7415AEN www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen free According to IEC61249-2-21 Definition • TrenchFET Power MOSFET • PowerPAK® Package - Low Thermal Resistance, RthJC

PCI-to-ISA

Abstract: 8888 IDSEL
Contextual Info: Application Note Driver Is Not Necessary for 8888 Apr. 26, 2005 Reversion History Reversion Change List 1.0 Note Initial version General Situation The standard purpose of 8888 is to be designed on motherboard. According to Intel ICHx specifications, if AD22 is connected to IDSEL, the ISA-bridge can be hidden. Please refer