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    AC200S Search Results

    AC200S Datasheets (1)

    JCET Group
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge CJAC200SN04U
    JCET Group N-Channel enhancement mode power MOSFET with 40V drain-source voltage, 200A continuous drain current, and ultra-low on-state resistance of 0.67mΩ at 10V gate-source voltage, utilizing SGT technology for high efficiency fast switching applications. Original PDF
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    AC200S Price and Stock

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    LEM Holdings SSA HAC-200-S

    CURRENT SENSOR HE/OL 200A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HAC-200-S Box 30 1
    • 1 $64.57
    • 10 $57.71
    • 100 $52.78
    • 1000 $52.01
    • 10000 $52.01
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    Destaco DLB-10M-A-C-200-S

    Externally powered base slide
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DLB-10M-A-C-200-S Bulk 5 1
    • 1 $916.00
    • 10 $916.00
    • 100 $916.00
    • 1000 $916.00
    • 10000 $916.00
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    Destaco DLB-16M-A-C-200-S

    Externally powered base slide
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    DigiKey DLB-16M-A-C-200-S Bulk 5 1
    • 1 $1099.00
    • 10 $1099.00
    • 100 $1099.00
    • 1000 $1099.00
    • 10000 $1099.00
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    Destaco DLB-12M-A-C-200-S

    Externally powered base slide
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DLB-12M-A-C-200-S Bulk 5 1
    • 1 $1120.00
    • 10 $1120.00
    • 100 $1120.00
    • 1000 $1120.00
    • 10000 $1120.00
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    Micron Technology Inc MTFDDAC200SAL-1N1AA

    SSD 200GB 2.5" SLC SATA III 5V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MTFDDAC200SAL-1N1AA Tray
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    Vyrian MTFDDAC200SAL-1N1AA 3,781
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    AC200S Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    NPTB0004

    Abstract: NPTB00004 NPTB00025 RF Power Transistors NPT25100 NPT35015 Gan on silicon transistor NPT25015 RF Transistor Selection rf transistor 2.5GHz
    Contextual Info: Product Selection Guide Nitronex’s patented Sigantic process combines the superior intrinsic high performance of GaN devices with the economic benefit and ease of working with large-area silicon substrates. Our RF power transistors offer higher power densities, higher efficiency, and


    Original
    NPT25015 PO150S NPT251 NPTB00025 AC200B NPTB00040 AC360C NPTB00050 AC360B NPTB0004 NPTB00004 NPTB00025 RF Power Transistors NPT25100 NPT35015 Gan on silicon transistor NPT25015 RF Transistor Selection rf transistor 2.5GHz PDF

    1734 IB8

    Contextual Info: 1/91 7 ~ 7 4 -0 9 -0 { JcnuEH R 2225-K Martin Avenue, Santa Clara, CA 95050 408 492-1400 FAX (408)492-1500 HDM PDNENTS 0.3 to 2000 MHz TO-8 Cascadable Amplifiers AC2005 AC2006 0.1 to 2000 MHz + 9.0 dBm + 21.0 dBm 0.1 to 2000 MHz + 11.0 dBm + 22.0 dBm (Typical Values)


    OCR Scan
    2225-K AC2005 AC2006 -55to85Â Q00013H 1734 IB8 PDF