ABS 10 DIODE Search Results

Contextual Info: Diodes SMD Type Surface Mount Single Phase Glass Passivated Bridge Rectifiers ABS10 ABS 0.010 0.25 ● Reliable low cost construction utilizing 0.136(3.45) 0.028(0.7) 0.028(0.7) 0.128(3.25) 0.024(0.6) 0.012(0.3) 0~10 O 0.006(0.15) 0.002(0.05) 0.236(6.0) ● Ideal for printed circuit board

TOSHIBA IGBT DATA BOOK

Abstract: 1MBI300L120 1MBI300L-120 motorola diodes
Contextual Info: Electronic Component Specsheet Page 1 of 1 Part Number = 1MBI300L120 Manufacturer Name = Various Description = Independent IGBT Power Module - fsw=10-20kHz Circuits Per Package = 1 V BR CES (V) = 1.2k I(C) Abs.(A) Collector Current = 300 Absolute Max. Power Diss. (W) = 2.0k

SUD50N06-09L-E3

Abstract: 72004 SUD50N06-09L
Contextual Info: SUD50N06-09L Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET, Logic Level FEATURES PRODUCT SUMMARY (A)a D TrenchFETr Power MOSFET D 175_C Junction Temperature 0.0093 @ VGS = 10 V 50 APPLICATIONS 0.0122 @ VGS = 4.5 V 50 D Automotive − ABS − Motor Drives

HVR-1X 7 diode

Abstract: FMS-3FU HVR-1X 6 diode MICROWAVE OVEN HIGH VOLTAGE RECTIFIER DIODE - HVR FMPG5F rk36 diode rk14 diode HVR-1X 7 diode RU 3AM HVR-1X diode
Contextual Info: DIODES RECTIFIER DIODES Absolute Maximum Ratings Type No. VRM IO IFSM V (A) (A) Elec. Char. at 25°C VF 200 SFPM-54 400 SFPM-62 200 SFPM-64 Abs. Max. Ratings Type No. Max. @ IF(µA) (V) SFPM-52 IR 0.9 30 1.0 1.0 45 0.98 (A) VRM IO IFSM (V) (A) (A) Max. 10

3652HV

Abstract: LiFePO4 charger charger ic lifepo4 4 cell in series lead acid 16v battery charger LT3652HVIMSE diagram LEAD ACID CHARGER 8 amp 12V SOLAR Lead Acid 6v Charger replacement Bd 136
Contextual Info: LT3652HV Power Tracking 2A Battery Charger FEATURES DESCRIPTION Input Supply Voltage Regulation Loop for Peak Power Tracking in MPPT Solar Applications n Wide Input Voltage Range: 4.95V to 34V (40V Abs Max) n Programmable Charge Rate Up to 2A n User Selectable Termination: C/10 or On-Board

SUP57N20-33

Contextual Info: SUP57N20-33 New Product Vishay Siliconix N-Channel 200-V D-S 175_C MOSFET FEATURES D TrenchFETr Power MOSFETS D 175_C Junction Temperature PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 200 0.033 @ VGS = 10 V 57 APPLICATIONS D Automotive - 42-V EPS and ABS

Contextual Info: SUM110N08-07 New Product Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D New Low Thermal Resistance Package PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.007 @ VGS = 10 V 85 APPLICATIONS D Automotive – Boardnet 42-V EPS and ABS

S2186

Abstract: SUM110N08-07 S-21863 A110D
Contextual Info: SUM110N08-07 New Product Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D New Low Thermal Resistance Package PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.007 @ VGS = 10 V 110 APPLICATIONS D Automotive - Boardnet 42-V EPS and ABS

QB-14-HAD

Abstract: QB-16-HAD QB-21-HA-1 QB-25-HAD QB-29-HAD QB-29-HAD-2 QB-36-HAD-2 QB-37-AD-1 QB-38-HAD QN-24-HAD-2
Contextual Info: SPST DIODE SWITCH SERIES QB, QN HIGH ISOLATION-REFLECTIVE AND ABSORPTIVE 0.02–18 GHz GENERAL SPECIFICATIONS Frequency Coverage: 0.02 to 18.0 GHz. RF Impedance: 50 Ohms. RF Power: +20 dBm operational. DC Requirements: Switches without drivers require +50 mA maximum for the “off” condition. For the “on” condition all models

QB-14-HAD

Abstract: QB-16-HAD QB-21-HA-1 QB-25-HAD QB-29-HAD QB-29-HAD-2 QB-36-HAD-2 QB-37-AD-1 QB-38-HAD QN-24-HAD-2
Contextual Info: SPST DIODE SWITCH SERIES QB, QN HIGH ISOLATION-REFLECTIVE AND ABSORPTIVE 0.02–18 GHz GENERAL SPECIFICATIONS Frequency Coverage: 0.02 to 18.0 GHz. RF Impedance: 50 Ohms. RF Power: +20 dBm operational. DC Requirements: Switches without drivers require +50 mA maximum for the “off” condition. For the “on” condition all models

XB-98-HAD-1

Contextual Info: BROADBAND SPUT DIODE SWITCH HIGH ISOLATION-REFLECTIVE AND ABSORPTIVE 0.02-18 GHz SERIES XB, XL, XN GENERAL SPECIFICATIONS Frequency Coverage: RF Impedance: RF Power DC Requirements: Temperature Information: Switching Speed: Connectors: 0.02 to 18.0 GHz. 50 6 h m s .

XB-11-HAD-1

Abstract: XB-14-AD XB-15-HAD XB-17-HAD XB-20-HAD-1 XB-21-AD-1 XB-35-HAD-1 XB-37-HAD-2 XL-22D-1 XN-12
Contextual Info: BROADBAND SPDT DIODE SWITCH SERIES XB, XL, XN HIGH ISOLATION-REFLECTIVE AND ABSORPTIVE 0.02–18 GHz GENERAL SPECIFICATIONS Frequency Coverage: RF Impedance: RF Power: 0.02 to 18.0 GHz. 50 OHMS. +20 dBM operational. Consult factory for high power options. 1 watt average,

Contextual Info: BROADBAND SPDT DIODE SWITCH SERIES XB, XL, XN HIGH ISOLATION-REFLECTIVE AND ABSORPTIVE 0.02–18 GHz GENERAL SPECIFICATIONS Frequency Coverage: RF Impedance: RF Power: 0.02 to 18.0 GHz. 50 OHMS. +20 dBM operational. Consult factory for high power options. 1 watt average,

XB-11-HAD-1

Abstract: XB-14-AD XB-15-HAD XB-17-HAD XB-20-HAD-1 XB-21-AD-1 XB-35-HAD-1 XB-37-HAD-2 XL-22D-1 XN-12
Contextual Info: BROADBAND SPDT DIODE SWITCH SERIES XB, XL, XN HIGH ISOLATION-REFLECTIVE AND ABSORPTIVE 0.02–18 GHz GENERAL SPECIFICATIONS Frequency Coverage: RF Impedance: RF Power: 0.02 to 18.0 GHz. 50 OHMS. +20 dBM operational. Consult factory for high power options. 1 watt average,

b14a

Abstract: A47AD b14ad B-14-AD B53h
Contextual Info: BROADBAND SPDT DIODE SWITCH SERIES XB, XL, HIGH ISOLATION-REFLECTIVE AND ABSORPTIVE 0.02-18 GHz GENERAL SPECIFICATIONS Frequency Coverage: RF Impedance: RF Power: 0.02 to 18.0 GHz. 50 OHMS. +20 dBM operational. Consult factory for high power options. 1 watt average,

ABS 10 diode

Abstract: ITT CANNON MCE RD1100 TB-412-HASD TB-415-HARD TB-416-RD TB-417-ASD TB-422-HASD-1 TB-426-HARD TB-434-HASD
Contextual Info: NARROWBAND SP4T DIODE SWITCH SERIES TN/TB/TL-400 REFLECTIVE AND ABSORPTIVE 0.1–18 GHz GENERAL SPECIFICATIONS Frequency Coverage: RF Impedance: RF Power: DC Requirements: Temperature Information: Switching Speed: Connectors: 0.1 to 18.0 GHz. 50 OHMS. +20 dBm operational.

VB-17-HASD

Abstract: VB-17-SD VB-35-HASD VB-37-HASD-1 VB-48-HASD VB-57-HASD VB-73-HASD-2 VB-75-HASD VB-84-HASD-2 VB-95-HASD
Contextual Info: SP3T DIODE SWITCH SERIES VB, VN REFLECTIVE AND ABSORPTIVE 0.02–18 GHz GENERAL INFORMATION Series VB, VN, switches are medium power devices that operate over commonly used frequency ranges. Carefully selected diodes placed in either series, series-shunt, or shunt configurations produce excellent

TL 434

Abstract: ITT 434 Cannon connectors TB-417-ASD RD1100 cannon 25 pin connector ITT Cannon ITT DIODE TB-412-HASD TB-415-HARD
Contextual Info: NARROWBAND SP4T DIODE SWITCH SERIES TN/TB/TL-400 REFLECTIVE AND ABSORPTIVE 0.1–18 GHz GENERAL SPECIFICATIONS Frequency Coverage: RF Impedance: RF Power: DC Requirements: Temperature Information: Switching Speed: Connectors: 0.1 to 18.0 GHz. 50 OHMS. +20 dBm operational.

70.2 Diode

Abstract: Transistor VN VN Series VB-17-HASD VB-17-SD VB-35-HASD VB-37-HASD-1 VB-48-HASD VB-57-HASD VB-73-HASD-2
Contextual Info: SP3T DIODE SWITCH SERIES VB, VN REFLECTIVE AND ABSORPTIVE 0.02–18 GHz GENERAL INFORMATION Series VB, VN, switches are medium power devices that operate over commonly used frequency ranges. Carefully selected diodes placed in either series, series-shunt, or shunt configurations produce excellent

Q110

Abstract: TB454
Contextual Info: NARROWBAND SP4T DIODE SWITCH S E R IE S TN/TB/TL-400 REFLECTIVE AND ABSORPTIVE 0.1-18 GHz GENERAL SPECIFICATIONS Frequency Coverage: RF Impedance: RF Power: DC Requirements: 0.1 to 18.0 GHz. 50 O H M S. +20 dBm operational. Switches with drivers require +5 volts

TB-515-HARD

Abstract: Cannon connectors TB-558-HARD-2 ITT Cannon TB-596-ASD TB-516-SD-1 TB-532-HARD-2 TB-535-HARD-2 TB-538-SD TB-558-SD-1
Contextual Info: BROADBAND SP5T DIODE SWITCH SERIES TB-500 HIGH ISOLATION-REFLECTIVE-ABSORPTIVE 0.1–18 GHz GENERAL SPECIFICATIONS Frequency Coverage: RF Impedance: RF Power: DC Requirements: Temperature Information: Switching Speed: Connectors: 0.1 to 18.0 GHz. 50 OHMS.

TB800

Abstract: TB-812-SD TB-842-SD TB-854-HASD TB-854-HASD-2 TB-866-HASD TB-885-ASD TB-888-HASD TN-824-HASD TN-851-SD
Contextual Info: BROADBAND SP8T DIODE SWITCH SERIES TB800 HIGH ISOLATION-REFLECTIVE ABSORPTIVE 0.02–18 GHz GENERAL SPECIFICATIONS Frequency Coverage: RF Impedance: RF Power: 0.02 to 18.0 GHz. 50 OHMS. +20 dBm operational. Consult factory for high power options. DC Requirements:

Contextual Info: BROADBAND SP5T DIODE SWITCH SERIES TB-500 HIGH ISOLATION-REFLECTIVE-ABSORPTIVE 0.1-18 GHz GENERAL SPECIFICATIONS Frequency Coverage: RF Impedance: RF Power: 0.1 to 18.0 GHz. 50 O H M S. +20 dBm operational. D C Requirements: Switches with drivers require +5

Contextual Info: BROADBAND SP8T DIODE SWITCH SERIES TB800 HIGH ISOLATION-REFLECTIVE ABSORPTIVE 0.02-18 GHz GENERAL SPECIFICATIONS Frequency Coverage: 0.02 to 18.0 GHz. 50 OHMS. RF Im pedance: RF Power: +20 dBm operational. Consult factory for high power options. DC Requirem ents: