ABLESTICK 550 Search Results

60IDS

Abstract: x-band mmic
Contextual Info: FMA246 Preliminary Datasheet v2.3 HIGH GAIN X-BAND MMIC AMPLIFIER FEATURES: • • • • • • • LAYOUT: 8.0 – 14.0 GHz Operating Bandwidth 2.5 dB Noise Figure 30 dB Small-Signal Gain 19 dm Output Power +6V Single Bias Supply Adjustable Operating Current

x-band mmic

Abstract: FMA246 60IDSS 60IDS
Contextual Info: FMA246 Preliminary Datasheet v3.0 HIGH GAIN X-BAND MMIC AMPLIFIER FEATURES: • • • • • • • LAYOUT: 8.0 – 14.0 GHz Operating Bandwidth 2.5 dB Noise Figure 30 dB Small-Signal Gain 19 dm Output Power +6V Single Bias Supply Adjustable Operating Current

Contextual Info: FPD1500 FPD15001W Power pHEMT 1W POWER pHEMT Package Style: Bare Die Product Description Features The FPD1500 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx1500μm Schottky barrier gate, defined by high resolution stepper-based photolithography. The recessed gate structure minimizes

X-band Gan Hemt

Abstract: FMA246 A246 MIL-HDBK-263 x-band mmic MIL-STD-1686 X-band GaAs pHEMT MMIC Chip
Contextual Info: FMA246 FMA246 HIGH GAIN X-BAND MMIC AMPLIFIER Package Style: Bare Die Product Description Features The FMA246 is a three-stage, reactively matched pHEMT high-gain MMIC amplifier designed for use over 8GHz to 14GHz. The supply voltage can be varied from +3V

Contextual Info: FMA246 HIGH GAIN X-BAND MMIC AMPLIFIER FEATURES: • • • • • • • • Preliminary Datasheet v2.2 LAYOUT: Available as RF Known Good Die 8.0 – 14.0 GHz Operating Bandwidth 2.5 dB Noise Figure 30 dB Small-Signal Gain 19 dm Output Power +6V Single Bias Supply

Contextual Info: FMA246 FMA246 HIGH GAIN X-BAND MMIC AMPLIFIER Package Style: Bare Die Product Description Features The FMA246 is a three-stage, reactively matched pHEMT high-gain MMIC amplifier designed for use over 8GHz to 14GHz. The supply voltage can be varied from +3V

E8363B

Abstract: E4446A E8257D JESD22-A114 E4446A PSA VA108 RFSW2043D
Contextual Info: RFSW2043D RFSW2043D DC to 20GHz GaAs SPDT Switch DC TO 20GHz GaAs SPDT SWITCH Package: Die, 1.33mmx1.11mmx0.10mm Product Description Features RFMD’s RFSW2043D is an absorptive SPDT GaAs microwave monolithic integrated circuit MMIC switch designed using the RFMD FD05 0.5m

FPD1500

Abstract: FPD1500 SOT89 ablestick 550 MIL-HDBK-263
Contextual Info: FPD1500 FPD15001W Power pHEMT 1W POWER pHEMT Package Style: Bare Die Product Description Features The FPD1500 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx1500μm Schottky barrier gate, defined by high resolution stepper-based photolithography. The recessed gate structure minimizes

Contextual Info: RFSW2043D RFSW2043D DC to 20GHz GaAs SPDT Switch DC TO 20GHz GaAs SPDT SWITCH Package: Die, 1.33mm x 1.11mm x 0.10mm Product Description Features RFMD’s RFSW2043D is an absorptive SPDT GaAs microwave monolithic integrated circuit MMIC switch designed using the RFMD FD05 0.5m

E8363

Abstract: RFSW2043DS
Contextual Info: RFSW2043D RFSW2043D DC to 20GHz GaAs SPDT Switch DC TO 20GHz GaAs SPDT SWITCH Package: Die, 1.33mmx1.11mmx0.10mm Product Description Features RFMD’s RFSW2043D is an absorptive SPDT GaAs microwave monolithic integrated circuit MMIC switch designed using the RFMD FD05 0.5m

RFSW2043D

Contextual Info: RFSW2043D RFSW2043D DC to 20GHz GaAs SPDT Switch DC TO 20GHz GaAs SPDT SWITCH Package: Die, 1.33mm x 1.11mm x 0.10mm Product Description Features RFMD’s RFSW2043D is an absorptive SPDT GaAs microwave monolithic integrated circuit MMIC switch designed using the RFMD FD05 0.5m

RFSW2041D

Contextual Info: RFSW2041D RFSW2041D DC to 25GHz GaAs SPDT Switch DC TO 25GHz GaAs SPDT SWITCH Package: Die, 1.91mmx2.11mmx0.10mm Product Description Features RFMD’s RFSW2041D is a reflective SPDT GaAs microwave monolithic integrated circuit MMIC switch designed using the RFMD FD05 0.5m

x-Band Hemt Amplifier

Abstract: x-band mmic X-band GaAs pHEMT MMIC Chip
Contextual Info: FMA246 FMA246 HIGH GAIN X-BAND MMIC AMPLIFIER Package Style: Bare Die Product Description Features The FMA246 is a three-stage, reactively matched pHEMT high-gain MMIC amplifier designed for use over 8GHz to 14GHz. The supply voltage can be varied from +3V

Contextual Info: RFSW2041D RFSW2041D DC to 25GHz GaAs SPDT Switch DC TO 25GHz GaAs SPDT SWITCH Package: Die, 1.91mmx2.11mmx0.10mm Product Description Features RFMD’s RFSW2041D is a reflective SPDT GaAs microwave monolithic integrated circuit MMIC switch designed using the RFMD FD05 0.5m

E8257D

Abstract: ultrasonic probe E4446A E8363B JESD22-A114 bjt microwave 15 GHz RFSW2041D v4438
Contextual Info: DRAFT DRAFT RFSW2041D RFSW2041D DC to 25GHz GaAs SPDT Switch DC TO 25GHz GaAs SPDT SWITCH Package: Die, 1.91mmx2.11mmx0.10mm Product Description Features RFMD’s RFSW2041D is a reflective SPDT GaAs microwave monolithic integrated circuit MMIC switch designed using the RFMD FD05 0.5m

Contextual Info: RFSW2041D RFSW2041D DC to 25GHz GaAs SPDT Switch DC TO 25GHz GaAs SPDT SWITCH Package: Die, 1.91mmx2.11mmx0.10mm Product Description Features RFMD’s RFSW2041D is a reflective SPDT GaAs microwave monolithic integrated circuit MMIC switch designed using the RFMD FD05 0.5m

Contextual Info: AUG 1 4 Wf H V 25 H V 26 Gì Supertex inc. Preliminary High Voltage, Fault-protected Analog Multiplexer Ordering Information O rder Number / Package Device Configuration 16-pin Plastic Dip 16-pin Side-brazed Dip Single 8-Channel HV2516P HV2516C HV2516WG HV2516X

FMA3014

Abstract: MIL-HDBK-263
Contextual Info: FMA3014 FMA3014 12.7GHZ TO 16GHZ MMIC LIMITING AMPLIFIER Package Style: Bare Die Product Description Features The FMA3014 is a high performance 12.7GHz to 16GHz Gallium Arsenide monolithic amplifier. It is suitable for use in broadband communication and electronic

Contextual Info: FMA3014 FMA3014 12.7GHZ TO 16GHZ MMIC LIMITING AMPLIFIER Package Style: Bare Die NOT FOR NEW DESIGNS Product Description Features The FMA3014 is a high performance 12.7GHz to 16GHz Gallium Arsenide monolithic amplifier. It is suitable for use in broadband communication and electronic

wafer 60g

Abstract: ati 4350* circuit
Contextual Info: FMA3014 FMA3014 12.7GHZ TO 16GHZ MMIC LIMITING AMPLIFIER Package Style: Bare Die NOT FOR NEW DESIGNS Product Description Features The FMA3014 is a high performance 12.7GHz to 16GHz Gallium Arsenide monolithic amplifier. It is suitable for use in broadband communication and electronic

30SPA0553

Abstract: 30SPA0557 84-1LMI
Contextual Info: 27.0-32.0 GHz GaAs MMIC Power Amplifier 30SPA0553 September 2005 - Rev 01-Sep-05 Features Chip Device Layout tio n Ka-Band 2W Power Amplifier 22.0 dB Small Signal Gain +33.0 dBm Saturated Output Power +40.0 dBm Output Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing

Contextual Info: I TEKTRONIX INC/ TRI ÛUINT 2L>E D El flTDbSlö D D 0 0 3 H _ S O TRÖ T ^ ' 2 \S\ BiBtLI G i g a B i t L o g ic 10G004 Quad 2:1 Multiplexer 1.8 GHz/3.6 Gbit/s NRZ Data Rate 10G PicoLogic Family FEATURES • 3.6 Gbit/sec output NRZ data rate

18MPA0567

Abstract: 84-1LMI
Contextual Info: 17.0-22.0 GHz GaAs MMIC Power Amplifier 18MPA0567 September 2005 - Rev 01-Sep-05 Features Chip Device Layout tio n Excellent Saturated Output Stage 22.0 dB Small Signal Gain +27.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

Contextual Info: 27.0-32.0 GHz GaAs MMIC Power Amplifier P1026-BD February 2006 - Rev 23-Feb-07 Features Ka-Band 2W Power Amplifier 22.0 dB Small Signal Gain +33.0 dBm Saturated Output Power +40.0 dBm Output Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing