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    ABFP Search Results

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    Brady Worldwide Inc CAB-F-PK

    WIRE MARKER, 3.5 IN H X 0.5 IN W
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    DigiKey CAB-F-PK Bulk 1
    • 1 $225.99
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    NKK Switches IS15ABFP4B

    SW PROG DISPLAY SPST-NO 0.1A 12V
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    Schneider Electric NSYTRABFPV5

    MARKING CARD ENCLOSURES
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    DigiKey NSYTRABFPV5 Bulk 10
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    RS NSYTRABFPV5 Bulk 50 1 Weeks 1
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    Schneider Electric NSYTRABFPV6

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    DigiKey NSYTRABFPV6 Bulk 10
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    RS NSYTRABFPV6 Bulk 1 Weeks 10
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    NKK Switches IS15ABFP4RGB

    IS LCD 36x24 RGB PB SWITCH
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    DigiKey () IS15ABFP4RGB Tray 1
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    IS15ABFP4RGB Box
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    Component Electronics, Inc IS15ABFP4RGB 10
    • 1 $46.15
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    ABFP Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: IXKP 10N60C5M CoolMOS 1 Power MOSFET ID25 = 5.4 A VDSS = 600 V RDS on) max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G Preliminary data S Features MOSFET Symbol Conditions


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    10N60C5M O-220 20090209d PDF

    10N60C

    Abstract: GS54
    Contextual Info: Advanced Technical Information COOLMOS * Power MOSFET IXKP 10N60C5M ID25 = 5.4 A VDSS = 600 V RDS on max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G S Features MOSFET


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    10N60C5M O-220 20070704a9 10N60C GS54 PDF

    10N60C

    Abstract: c16tj 10N60C5M
    Contextual Info: IXKP 10N60C5M CoolMOS 1 Power MOSFET ID25 = 5.4 A VDSS = 600 V RDS on) max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G Preliminary data S Features MOSFET Symbol Conditions


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    10N60C5M O-220 20080523c 10N60C c16tj 10N60C5M PDF

    Contextual Info: IXKP 10N60C5M COOLMOS * Power MOSFET ID25 = 5.4 A VDSS = 600 V RDS on max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G Preliminary data S Features MOSFET Symbol Conditions


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    10N60C5M O-220 20080310b PDF

    10N60C5M

    Abstract: kw0649 IGBT GS c16tj 10N60C
    Contextual Info: Advanced Technical Information IXKP 10N60C5M ID25 = 5.4 A VDSS = 600 V RDS on max = 0.385 Ω CoolMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G S Features MOSFET Conditions


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    10N60C5M O-220 10N60C5M kw0649 IGBT GS c16tj 10N60C PDF

    10N60C

    Abstract: C3525
    Contextual Info: Advanced Technical Information COOLMOS * Power MOSFET IXKP 10N60C5M ID25 = 5.4 A VDSS = 600 V RDS on max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G S Features MOSFET


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    10N60C5M O-220 10N60C C3525 PDF

    10N60C

    Abstract: 10N60C5M
    Contextual Info: IXKP 10N60C5M CoolMOS 1 Power MOSFET ID25 = 5.4 A VDSS = 600 V RDS on) max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G Preliminary data S Features MOSFET Symbol Conditions


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    10N60C5M O-220 20090209d 10N60C 10N60C5M PDF

    Contextual Info: Advanced Technical Information COOLMOS * Power MOSFET IXKP 10N60C5M ID25 = 5.4 A VDSS = 600 V RDS on max = 0.385 W Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-220 ABFP D G D S G S Features MOSFET


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    10N60C5M O-220 PDF

    Transistor TT 2246

    Abstract: TT 2206 datasheet apm 4906 TT 2206 transistor tt 2206 tt 2246 bt 7377 SOT-23 AAAA bc 5478 AAXZ
    Contextual Info: SOT TOPMARKS: 2 and 4 Letter ID Coding SOT Topmarks − April 24, 2005 Sorted By Part Number Sorted By Topmark Part Prefix Number Suffix Topmark Package Part Prefix Number Suffix Topmark Package LM 4040A EM3−2.1 FZNG 3/SOT−23 MAX 1916 ZT 1111 6/SOT−23


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    3/SOT-23 6/SOT-23 10/uMAX 3/SC-70 Transistor TT 2246 TT 2206 datasheet apm 4906 TT 2206 transistor tt 2206 tt 2246 bt 7377 SOT-23 AAAA bc 5478 AAXZ PDF

    Contextual Info: IXKP 13N60C5M COOLMOS * Power MOSFET ID25 = 6.5 A VDSS = 600 V RDS on max = 0.3 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions


    Original
    13N60C5M O-220 20080310b PDF

    Contextual Info: Advanced Technical Information COOLMOS * Power MOSFET IXKP 20N60C5M ID25 = 7.6 A VDSS = 600 V RDS on max = 0.2 W Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-220 FP D G D S G S Features MOSFET Conditions


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    20N60C5M O-220 PDF

    C4080

    Contextual Info: Advanced Technical Information COOLMOS * Power MOSFET IXKP 24N60C5M ID25 = 8.5 A VDSS = 600 V RDS on max = 0.165 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET


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    24N60C5M O-220 20070704a C4080 PDF

    Contextual Info: Advanced Technical Information IXKP 20N60C5M ID25 = 7.6 A VDSS = 600 V RDS on max = 0.2 Ω CoolMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Conditions


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    20N60C5M O-220 PDF

    ABWG

    Abstract: ABWF abqp marking abwg MAX6310UK26D2 abvz UK39 marking ABET abln ABFM
    Contextual Info: 19-1145; Rev 0; 9/96 5-Pin, Multiple-Input, Programmable Reset ICs _Features The MAX6305MAX6313 CMOS microprocessor µP supervisory circuits are designed to monitor more than one power supply. Ideal for monitoring both 5V and


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    MAX6305 MAX6313 OT23-5 100mV MAX6313 ABWG ABWF abqp marking abwg MAX6310UK26D2 abvz UK39 marking ABET abln ABFM PDF

    35n60c

    Abstract: ixkp35n60c5m
    Contextual Info: IXKP 35N60C5M ID25 = 11.5 A VDSS = 600 V RDS on max = 0.1 Ω COOLMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions


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    35N60C5M O-220 20080310a 35n60c ixkp35n60c5m PDF

    Contextual Info: Advanced Technical Information COOLMOS * Power MOSFET IXKP 20N60C5M ID25 = 7.6 A VDSS = 600 V RDS on max = 0.2 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Symbol


    Original
    20N60C5M O-220 20070704a PDF

    Contextual Info: Advanced Technical Information COOLMOS * Power MOSFET IXKP 20N60C5M ID25 = 7.6 A VDSS = 600 V RDS on max = 0.2 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Conditions


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    20N60C5M O-220 PDF

    Contextual Info: Advanced Technical Information IXKP 24N60C5M ID25 = 8.5 A VDSS = 600 V RDS on max = 0.165 Ω CoolMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Conditions


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    24N60C5M O-220 PDF

    ABIK

    Abstract: ABWF ABVZ SOT-23 ABWG ABGV UK39 UK26 abht marking ABYE marking code abwg sot23
    Contextual Info: 19-1145; Rev 4; 12/07 5-Pin, Multiple-Input, Programmable Reset ICs The MAX6305MAX6313 CMOS microprocessor µP supervisory circuits are designed to monitor more than one power supply. Ideal for monitoring both 5V and 3.3V in personal computer systems, these devices


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    MAX6305 MAX6313 OT23-5 100mV MAX6313 ABIK ABWF ABVZ SOT-23 ABWG ABGV UK39 UK26 abht marking ABYE marking code abwg sot23 PDF

    marking code abwg sot23

    Abstract: SOT-23 ABWG abvz ABVG ABJN ABYF abWG ABTK marking code R2 sot23 MAX6307
    Contextual Info: 19-1145; Rev 3; 11/05 5-Pin, Multiple-Input, Programmable Reset ICs The MAX6305MAX6313 CMOS microprocessor µP supervisory circuits are designed to monitor more than one power supply. Ideal for monitoring both 5V and 3.3V in personal computer systems, these devices


    Original
    MAX6305 MAX6313 OT23-5 100mV OT-23 MAX6313 OT-23, marking code abwg sot23 SOT-23 ABWG abvz ABVG ABJN ABYF abWG ABTK marking code R2 sot23 MAX6307 PDF

    Contextual Info: IXKP 24N60C5M CoolMOS 1 Power MOSFET ID25 = 8.5 A VDSS = 600 V RDS on) max = 0.165 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions


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    24N60C5M O-220 20090209d PDF

    20n60c5

    Abstract: 20n60c5m
    Contextual Info: IXKP 20N60C5M CoolMOS 1 Power MOSFET ID25 = 7.6 A VDSS = 600 V RDS on) max = 0.2 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions


    Original
    20N60C5M O-220 20090209d 20n60c5 20n60c5m PDF

    Contextual Info: IXKP 20N60C5M CoolMOS 1 Power MOSFET ID25 = 7.6 A VDSS = 600 V RDS on) max = 0.2 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions


    Original
    20N60C5M O-220 20090209d PDF

    MA660

    Contextual Info: Advanced Technical Information COOLMOS * Power MOSFET IXKP 13N60C5M ID25 = 6.5 A VDSS = 600 V RDS on max = 0.3 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Conditions


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    13N60C5M O-220 MA660 PDF