13N60C5M Search Results

Contextual Info: IXKP 13N60C5M COOLMOS * Power MOSFET ID25 = 6.5 A VDSS = 600 V RDS on max = 0.3 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions

MA660

Contextual Info: Advanced Technical Information COOLMOS * Power MOSFET IXKP 13N60C5M ID25 = 6.5 A VDSS = 600 V RDS on max = 0.3 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Conditions

13n60c

Abstract: 13N60
Contextual Info: IXKP 13N60C5M CoolMOS 1 Power MOSFET ID25 = 6.5 A VDSS = 600 V RDS on) max = 0.3 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions

13N60

Abstract: 13N60C5M
Contextual Info: IXKP 13N60C5M CoolMOS 1 Power MOSFET ID25 = 6.5 A VDSS = 600 V RDS on) max = 0.3 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions

Contextual Info: Advanced Technical Information COOLMOS * Power MOSFET IXKP 13N60C5M ID25 = 6.5 A VDSS = 600 V RDS on max = 0.3 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Symbol

Contextual Info: Advanced Technical Information COOLMOS * Power MOSFET IXKP 13N60C5M ID25 = 6.5 A VDSS = 600 V RDS on max = 0.3 W Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-220 FP D G D S G S Features MOSFET Conditions

Contextual Info: Advanced Technical Information IXKP 13N60C5M ID25 = 6.5 A VDSS = 600 V RDS on max = 0.3 Ω CoolMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Conditions

Contextual Info: IXKP 13N60C5M CoolMOS 1 Power MOSFET ID25 = 6.5 A VDSS = 600 V RDS on) max = 0.3 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches